JPS6364906B2 - - Google Patents
Info
- Publication number
- JPS6364906B2 JPS6364906B2 JP56119089A JP11908981A JPS6364906B2 JP S6364906 B2 JPS6364906 B2 JP S6364906B2 JP 56119089 A JP56119089 A JP 56119089A JP 11908981 A JP11908981 A JP 11908981A JP S6364906 B2 JPS6364906 B2 JP S6364906B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- region
- electrode
- main surface
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 238000002161 passivation Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 15
- 239000000969 carrier Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000005685 electric field effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- -1 Na + and K + ions Chemical class 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56119089A JPS5821373A (ja) | 1981-07-31 | 1981-07-31 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56119089A JPS5821373A (ja) | 1981-07-31 | 1981-07-31 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821373A JPS5821373A (ja) | 1983-02-08 |
| JPS6364906B2 true JPS6364906B2 (enExample) | 1988-12-14 |
Family
ID=14752613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56119089A Granted JPS5821373A (ja) | 1981-07-31 | 1981-07-31 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821373A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60153550U (ja) * | 1984-03-24 | 1985-10-12 | 三洋電機株式会社 | ラテラル型トランジスタ |
-
1981
- 1981-07-31 JP JP56119089A patent/JPS5821373A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821373A (ja) | 1983-02-08 |
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