JPS6362899B2 - - Google Patents
Info
- Publication number
- JPS6362899B2 JPS6362899B2 JP23861583A JP23861583A JPS6362899B2 JP S6362899 B2 JPS6362899 B2 JP S6362899B2 JP 23861583 A JP23861583 A JP 23861583A JP 23861583 A JP23861583 A JP 23861583A JP S6362899 B2 JPS6362899 B2 JP S6362899B2
- Authority
- JP
- Japan
- Prior art keywords
- enclosure
- electronic component
- temperature
- heating
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Joining Of Glass To Other Materials (AREA)
- Ceramic Products (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、半導体素子など電子部品を囲い体
の加熱接合により封止する、封止形電子部品装置
の気密封止方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for hermetically sealing a sealed electronic component device, in which an electronic component such as a semiconductor element is sealed by heat bonding of an enclosure.
この種の封止形電子部品装置として、ガラス封
止形半導体装置の場合を、第１図に示す縦断面図
により説明する。１は半導体装置で、次のように
構成されている。２は銀バンプ電極が設けられた
半導体素子で、外部電極３，４により上下から固
着挾持されている。５はガラススリーブからなる
囲い体で、外部電極３，４にはめられ溶着されて
半導体素子２を囲い気密封止している。
As this kind of sealed electronic component device, a glass-sealed semiconductor device will be explained with reference to a vertical cross-sectional view shown in FIG. 1 is a semiconductor device, which is configured as follows. Reference numeral 2 denotes a semiconductor element provided with silver bump electrodes, which is firmly clamped from above and below by external electrodes 3 and 4. Reference numeral 5 denotes an enclosure made of a glass sleeve, which is fitted onto the external electrodes 3 and 4 and welded to enclose the semiconductor element 2 and hermetically seal it.
上記半導体装置１の従来の気密封止方法は、次
のようにしていた。第１図のように、半導体素子
２を挾持した下、上外部電極３，４に囲い体５を
はめ、グラフアイト製の下部加熱体６の保持穴６
ａ内に入れる。つづいて、グラフアイト製の上部
加熱体７を上方から外部電極４のリードを貫通穴
７ａに逃してかぶせる。環境を真空引きし、つづ
いて不活性ガス雰囲気にし、囲い体５内部に不活
性ガスを充てんする。図示を略したヒータにより
下部加熱体６、上部加熱体７を加熱する。この加
熱は、第２図に示す時間経過に対する温度曲線図
のようにしていた。 A conventional method for hermetically sealing the semiconductor device 1 is as follows. As shown in FIG. 1, an enclosure 5 is fitted to the lower and upper external electrodes 3 and 4 holding the semiconductor element 2 between them, and a holding hole 6 of a lower heating element 6 made of graphite is fitted.
Put it in a. Subsequently, the upper heating body 7 made of graphite is covered from above with the leads of the external electrodes 4 passing through the through holes 7a. The environment is evacuated, then an inert gas atmosphere is created, and the inside of the enclosure 5 is filled with inert gas. The lower heating element 6 and the upper heating element 7 are heated by a heater (not shown). This heating was performed as shown in the temperature curve diagram over time shown in FIG.
加熱により次第に温度が上昇し、約700℃の高
温になり、囲い体５をなすガラススリーブが外部
電極３，４に溶着して接合し、気密封止する。加
熱を止めると温度は次第に降下する。 The temperature gradually rises as a result of heating, reaching a high temperature of about 700° C., and the glass sleeve forming the enclosure 5 is welded and joined to the external electrodes 3 and 4, resulting in an airtight seal. When heating is stopped, the temperature gradually drops.
上記従来の方法では、半導体素子２、囲い体
５、外部電極３，４、下部加熱体６及び上部加熱
体７に製造時に含まれ、さらに空気中から吸着し
ていた水蒸気、炭酸ガス、ナトリウム、金属イオ
ン等を含むガスが、封止時の加熱により多量に発
生し、そのガスがそのまま封止形半導体装置１内
に封止されることになつていた。このため、半導
体装置１は漏れ電流の増加、電気的特性の劣化増
大などとなり、不良品率が増加し信頼性が低下し
ていた。 In the above-mentioned conventional method, water vapor, carbon dioxide gas, sodium, etc. contained in the semiconductor element 2, the enclosure 5, the external electrodes 3, 4, the lower heating element 6, and the upper heating element 7 at the time of manufacturing and also adsorbed from the air, A large amount of gas containing metal ions and the like is generated due to heating during sealing, and the gas is to be sealed in the sealed semiconductor device 1 as it is. As a result, the semiconductor device 1 suffers from increased leakage current and increased deterioration of electrical characteristics, resulting in an increased rate of defective products and decreased reliability.
この発明は、上記従来方法の欠点をなくするた
めになされたもので、囲い体を外部電極に接合す
るための加熱を、温度が上昇し始めてから、いつ
たん、溶着封止温度より下の高温度にとどめてお
き、真空乾燥してから、不活性ガスの雰囲気にし
て囲い体内に不活性ガスを充てんさせ、接合温度
に上昇し気密封止するようにし、漏れ電流が小さ
く、電気的特性の劣化の少ない、信頼性の高い封
止形電子部品装置が得られる気密封止方法を提供
するものである。
This invention was made in order to eliminate the drawbacks of the above-mentioned conventional methods. After keeping the temperature at that temperature and vacuum drying, the enclosure is filled with inert gas in an atmosphere of inert gas, and the temperature rises to the bonding temperature to form an airtight seal, resulting in low leakage current and good electrical characteristics. The present invention provides an airtight sealing method that provides a highly reliable sealed electronic component device with little deterioration.
以下、この発明の一実施例による気密封止方法
を、次に説明する。
A hermetic sealing method according to an embodiment of the present invention will be described below.
第１図のように、囲い体５がはめられ溶着前の
半導体装置１を下部、上部の加熱体６，７に入
れ、内蔵するヒータにより加熱する。この加熱
は、第３図に示す時間経過に対する温度曲線図の
ようにする。まず、始めは、溶着封止温度700℃
より下の、各部品の含有、吸着ガスが放出される
高温度、例えば約500℃に加熱するとともに、環
境を真空引きすることにより囲い体５内を真空状
態にして数分間維持する。これにより、前記に説
明したガスが放出される。つづいて、純粋な不活
性ガス雰囲気にし、囲い体５内部に不活性ガスを
大気圧又は正圧で充てんする。引きつづき、加熱
温度を約700℃に上昇し、囲い体５を外部電極３，
４に溶着させ接合し封止する。 As shown in FIG. 1, the semiconductor device 1 fitted with the enclosure 5 and before welding is placed in lower and upper heating bodies 6 and 7, and heated by built-in heaters. This heating is performed as shown in the temperature curve diagram over time shown in FIG. First of all, the welding sealing temperature is 700℃.
The interior of the enclosure 5 is heated to a high temperature, for example, about 500° C., at which the adsorbed gas contained in each component is released, and the environment is evacuated to create a vacuum state within the enclosure 5, which is maintained for several minutes. This releases the gas described above. Subsequently, a pure inert gas atmosphere is created, and the interior of the enclosure 5 is filled with inert gas at atmospheric pressure or positive pressure. Subsequently, the heating temperature was increased to about 700°C, and the enclosure 5 was connected to the external electrode 3,
4, weld, join and seal.
なお、上記実施例では、封止形電子部品装置と
して、ガラス封止形半導体装置の場合を示した
が、高温加熱により囲い体を接合して気密封止さ
れる他の種の電子部品装置の場合にも適用できる
ものである。 In the above embodiment, a glass-sealed semiconductor device was used as the sealed electronic component device, but other types of electronic component devices that are hermetically sealed by bonding the enclosure by high-temperature heating are also applicable. It can also be applied to cases where
また、上記実施例では、囲い体５としてガラス
スリーブを用いたが、耐熱性の絶縁材で、外部電
極に接合でき気密封止するものであれば、他の部
材を用いてもよく、例えばセラミツクススリーブ
を用い、高温接着剤、高温ろう材などを使用し接
合するようにしてもよい。 Further, in the above embodiment, a glass sleeve is used as the enclosure 5, but other materials may be used as long as they are heat-resistant insulating materials, can be bonded to the external electrodes, and are airtightly sealed, such as ceramics. A sleeve may be used for joining using a high temperature adhesive, a high temperature brazing material, or the like.
以上のように、この発明の方法によれば、外部
電極に囲い体を接合するための加熱を、溶着封止
温度より下の高温度にしてとどめておき、真空乾
燥してから不活性ガスを囲い体内に充てんさせ、
引続き、接合温度に上昇し気密封止するようにし
たので、不純物ガスがほとんど除去されて封止さ
れ、漏れ電流がわずかとなり、特性劣下が少なく
なり、信頼性の高い封止形電子部品装置が得られ
る。
As described above, according to the method of the present invention, the heating for joining the enclosure to the external electrode is kept at a high temperature below the welding sealing temperature, and after vacuum drying, inert gas is applied. Fill the enclosure,
Subsequently, since the junction temperature was raised and the airtight sealing was performed, most of the impurity gas was removed and the sealing was completed, resulting in a highly reliable sealed electronic component device with little leakage current and less characteristic deterioration. is obtained.
第１図は半導体装置が加熱体に入れられ加熱に
より囲い体が接合されている状態を示す縦断面
図、第２図は従来の気密封止方法を示す時間経過
に対する加熱温度曲線図、第３図はこの発明の一
実施例による気密封止方法を示す時間経過に対す
る加熱温度曲線図である。
１…封止形半導体装置、２…半導体素子、３，
４…外部電極、５…囲い体、６，７…加熱体。な
お、図中同一符号は同一又は相当部分を示す。
FIG. 1 is a vertical cross-sectional view showing a state in which a semiconductor device is placed in a heating body and an enclosure is joined by heating, FIG. 2 is a heating temperature curve diagram over time showing a conventional hermetic sealing method, and FIG. The figure is a diagram of a heating temperature curve over time showing a hermetic sealing method according to an embodiment of the present invention. 1... Sealed semiconductor device, 2... Semiconductor element, 3,
4... External electrode, 5... Enclosure, 6, 7... Heating body. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
部電極に囲い体をはめて加熱接合し、上記電子部
品を気密封止する方法において、上記囲い体を上
記各外部電極に接合する加熱を、接合温度より下
の高温度にとどめて真空乾燥し、つづいて不活性
ガスを入れ、引きつづき、接合温度に上昇して囲
い体を外部電極に接合し封止することを特徴とす
る封止形電子部品装置の気密封止方法。 ２ 電子部品は半導体素子からなることを特徴と
する特許請求の範囲第１項記載の封止形電子部品
装置の気密封止方法。 ３ 囲い体はガラススリーブからなることを特徴
とする特許請求の範囲第１項又は第２項記載の封
止形電子部品装置の気密封止方法。[Scope of Claims] 1. In a method of hermetically sealing the electronic component by fitting an enclosure to a pair of external electrodes that are sandwiched and fixed from both sides and heat-bonding the electronic component, the enclosure is attached to each of the external electrodes. The heating for bonding is kept at a high temperature below the bonding temperature for vacuum drying, then an inert gas is introduced, and the temperature is raised to the bonding temperature to bond and seal the enclosure to the external electrode. A method for hermetically sealing a sealed electronic component device. 2. A method for hermetically sealing a sealed electronic component device according to claim 1, wherein the electronic component is a semiconductor element. 3. A method for hermetically sealing a sealed electronic component device according to claim 1 or 2, wherein the enclosure is made of a glass sleeve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23861583A JPS60128644A (en) | 1983-12-15 | 1983-12-15 | Hermetic sealing process of sealed type electronic part device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23861583A JPS60128644A (en) | 1983-12-15 | 1983-12-15 | Hermetic sealing process of sealed type electronic part device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60128644A JPS60128644A (en) | 1985-07-09 |
| JPS6362899B2 true JPS6362899B2 (en) | 1988-12-05 |
Family
ID=17032797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23861583A Granted JPS60128644A (en) | 1983-12-15 | 1983-12-15 | Hermetic sealing process of sealed type electronic part device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60128644A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000133736A (en) * | 1998-10-26 | 2000-05-12 | Furukawa Electric Co Ltd:The | Method and apparatus for airtight sealing of semiconductor laser device |
-
1983
- 1983-12-15 JP JP23861583A patent/JPS60128644A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60128644A (en) | 1985-07-09 |
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