JPS6361671B2 - - Google Patents
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- Publication number
- JPS6361671B2 JPS6361671B2 JP54098367A JP9836779A JPS6361671B2 JP S6361671 B2 JPS6361671 B2 JP S6361671B2 JP 54098367 A JP54098367 A JP 54098367A JP 9836779 A JP9836779 A JP 9836779A JP S6361671 B2 JPS6361671 B2 JP S6361671B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- tft
- area
- semiconductor layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000004973 liquid crystal related substance Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 19
- 239000003566 sealing material Substances 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 239000002335 surface treatment layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明は半導体層にTe、CdsCdSe等を用いた
薄膜トランジスタ（以下TFTと称する）を使用
したセグメント型液晶表示装置においてTFTを
液晶から保護するために液晶表示セルをシール部
により表示領域とTFT領域に分割し表示領域の
み液晶を挾持させTFT領域から液晶を隔離した
構造の液晶表示装置に関るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a segment type liquid crystal display device using a thin film transistor (hereinafter referred to as TFT) using Te, CdsCdSe, etc. as a semiconductor layer, in which a liquid crystal display cell is sealed by a sealing part to protect the TFT from liquid crystal. The present invention relates to a liquid crystal display device having a structure in which the display area is divided into a display area and a TFT area, and the liquid crystal is sandwiched only in the display area, and the liquid crystal is isolated from the TFT area.
まずTFTについて第１図とともに簡単に説明
する。TFTはガラスなどの絶縁基板１の表面に
ゲート電極２を設け、このゲート電極２を被覆す
るごとく絶縁層３を設け、その上に半導体層４、
ソース電極５、ドレイン電極６を順次設けた構造
が一般的である。ゲート電極２の材料としてはア
ルミニウム（Al）、金（Au）、タンタル（Ta）、
インジウム（In）などが利用され、マスク蒸着あ
るいはホトエツチング技術などを用いて設置す
る。絶縁膜３の材料としては酸化アルミニウム
（Al2O3）、二酸化ケイ素（SiO2）、一酸化ケイ素
（SiO）、フツ化カルシウム（CaF2）などの使用が
可能で真空蒸着法、スパツタリング法、CVD法
などの方法でゲート電極２を覆うように設置す
る。ゲート電極２がアルミニウム（Al）の場合
には、このアルミニウム（Al）を陽極酸化させ
ることにより酸化アルミニウム４Al2O3）絶縁膜
を形成させることも可能である。半導体層４の材
料としては一般にはセレン化カドミウム
（CdSe）、硫化カドミウム（CdS）、テルル（Te）
などが用いられ、真空蒸着やスパツタリングなど
の方法で付着させる。ソース電極５、およびドレ
イン電極６に使用される材料としては半導体層４
とオーム接触する材料にすることが望ましいが、
一般には金（Au）、アルミニウム（Al）などが
用いられる。 First, TFT will be briefly explained with reference to FIG. In TFT, a gate electrode 2 is provided on the surface of an insulating substrate 1 such as glass, an insulating layer 3 is provided to cover the gate electrode 2, and a semiconductor layer 4,
A structure in which a source electrode 5 and a drain electrode 6 are sequentially provided is common. Materials for the gate electrode 2 include aluminum (Al), gold (Au), tantalum (Ta),
It uses materials such as indium (In) and is installed using mask evaporation or photoetching techniques. As the material of the insulating film 3, aluminum oxide (Al 2 O 3 ), silicon dioxide (SiO 2 ), silicon monoxide (SiO), calcium fluoride (CaF 2 ), etc. can be used, and vacuum evaporation method, sputtering method, It is installed so as to cover the gate electrode 2 by a method such as a CVD method. When the gate electrode 2 is made of aluminum (Al), it is also possible to form an aluminum oxide (4Al 2 O 3 ) insulating film by anodizing the aluminum (Al). The materials for the semiconductor layer 4 are generally cadmium selenide (CdSe), cadmium sulfide (CdS), and tellurium (Te).
It is attached by methods such as vacuum evaporation and sputtering. The material used for the source electrode 5 and the drain electrode 6 is the semiconductor layer 4.
It is desirable to use a material that makes ohmic contact with the
Generally, gold (Au), aluminum (Al), etc. are used.
TFTの構造は第１図に示したものに限られる
ものではなく第２図に示すように半導体層４とソ
ース電極５、ドレイン電極６との位置を上下逆転
したり、第３図に示すように絶縁基板１の上にソ
ース電極５、ドレイン電極６および両電極の間に
半導体層４を設け半導体層４の上に絶縁層３、ゲ
ート電極２を設けたり、あるいはまた第４図に示
すように半導体層４にソース電極５およびドレイ
ン電極６を一部かぶせ、これらの上に絶縁膜３、
ゲート電極２を設けたりしてもよい。 The structure of the TFT is not limited to that shown in FIG. 1; the positions of the semiconductor layer 4, source electrode 5, and drain electrode 6 may be reversed upside down as shown in FIG. 2, or as shown in FIG. 3. Alternatively, a source electrode 5, a drain electrode 6, and a semiconductor layer 4 may be provided on an insulating substrate 1, and an insulating layer 3 and a gate electrode 2 may be provided on the semiconductor layer 4, or alternatively, as shown in FIG. A source electrode 5 and a drain electrode 6 are partially covered on the semiconductor layer 4, and an insulating film 3,
A gate electrode 2 may also be provided.
本発明に使用する半導体層がテルル（Te）よ
りなるTFTを使用したセグメント型液晶表示装
置について、第５図乃至第８図とともに説明す
る。第５図は１つのセグメントおよび１つの
TFTについての等価回路図である。 A segment type liquid crystal display device using a TFT whose semiconductor layer is made of tellurium (Te) used in the present invention will be explained with reference to FIGS. 5 to 8. Figure 5 shows one segment and one
It is an equivalent circuit diagram about TFT.
第６図で表わした液晶表示装置は１デイジツト
のみ示すが、１個のゲート線７、複数個のソース
線とドレイン線８、および半導体層９よりなる
TFTアレイを形成した基板１を有する。第８図
に示す如く、この基板１と対向する位置に透明導
電膜１０を形成した対向基板１１があり、両基板
の間には液晶材料１２が挾持されている。 Although only one digit is shown in the liquid crystal display device shown in FIG. 6, it is composed of one gate line 7, a plurality of source lines and drain lines 8, and a semiconductor layer 9.
It has a substrate 1 on which a TFT array is formed. As shown in FIG. 8, there is a counter substrate 11 on which a transparent conductive film 10 is formed at a position facing this substrate 1, and a liquid crystal material 12 is sandwiched between both substrates.
ところで、TFTに液晶が直接接触すると、接
触前に比べ特性が悪化する。具体例を第１図に示
した構造のTFTにおいて、第７図に示すその結
果とともに説明する。基板１には透明ガラス、ゲ
ート電極２にはアルミニウム（Al）、絶縁膜３に
は前記のアルミニウムを陽極酸化した酸化アルミ
ニウム（Al2O3）膜、半導体層４にはテルル
（Te）を、ソース電極５、ドレイン電極６には金
（Au）を用いている。またそれぞれの厚さは、２
のゲート電極は500〜5000Å、絶縁膜３は100〜
1500Å、半導体層４のテルル（Te）は50〜500
Å、ソース電極５、ドレイン電極６の金（Au）
の厚さは250〜5000Åで、またソース電極５とド
レイン電極６の間隙は１〜100μm程度が適当であ
る。 By the way, when a liquid crystal comes into direct contact with a TFT, its characteristics deteriorate compared to before contact. A specific example will be explained using the TFT having the structure shown in FIG. 1, together with the results shown in FIG. The substrate 1 is made of transparent glass, the gate electrode 2 is made of aluminum (Al), the insulating film 3 is made of aluminum oxide (Al 2 O 3 ) film obtained by anodizing the aluminum, and the semiconductor layer 4 is made of tellurium (Te). Gold (Au) is used for the source electrode 5 and the drain electrode 6. Also, the thickness of each is 2
The gate electrode is 500 to 5000 Å, and the insulating film 3 is 100 to 500 Å.
1500 Å, tellurium (Te) in semiconductor layer 4 is 50 to 500
Å, gold (Au) of source electrode 5 and drain electrode 6
The appropriate thickness is 250 to 5000 Å, and the gap between the source electrode 5 and drain electrode 6 is approximately 1 to 100 μm.
ソース・ドレイン電極間電圧VSD＝−10v、ゲ
ート電圧VG＝−14vの時のソース・ドレイン間抵
抗値をRpo、VSD＝−10v、VG＝ovのときのソー
ス・ドレイン間抵抗値をRpffとすると、TFTが液
晶と接触する前はRpo≒30KΩ、
Rpff≒6MΩでRpff／Rpo≒200となつているが
（第７図ａ）、液晶と接触後は
Rpo≒17KΩ，Rpff≒170KΩで（第７図ｂ）
Rpff／Rpo≒10となる。液晶表示装置にTFTを
第６図のように応用する場合は
Rpff／Rpoの値はかなりに大きな値（Rpff／Rpo
≧100程度）を必要とするがRpff／Rpo≒10程度に
落ち込んでは実用上使用できない。 The source-drain resistance value when the source-drain electrode voltage V SD = -10v and the gate voltage V G = -14v is R po , and the source-drain resistance value when V SD = -10v and V G = ov If the value is R pff , before the TFT contacts the liquid crystal, R po ≒30KΩ, R pff ≒6MΩ, and R pff /R po ≒200 (Figure 7a), but after the TFT contacts the liquid crystal, R With po ≒17KΩ and R pff ≒170KΩ (Figure 7b), R pff /R po ≒10. When applying TFT to a liquid crystal display device as shown in Figure 6, the value of R pff /R po is quite large (R pff /R po
≧100), but it cannot be used practically if R pff /R po ≒10.
本発明は上述の欠点に鑑み、TFT区域とセグ
メント表示区域とを分離して基板上に形成し、両
区域の境界領域に沿つてシール部を設けてセグメ
ント区域のみに液晶を封入し、液晶をTFTと非
接触状態にすることにより、TFTの液晶による
劣化を防止した液晶表示装置を提供することを目
的とするものである。 In view of the above-mentioned drawbacks, the present invention forms a TFT area and a segment display area separately on a substrate, provides a sealing part along the boundary area between the two areas, and seals liquid crystal only in the segment area. The object of the present invention is to provide a liquid crystal display device in which deterioration of the TFT due to the liquid crystal is prevented by making it in a non-contact state with the TFT.
以下、本発明を実施例に従つて図面を参照しな
がら詳説する。 Hereinafter, the present invention will be explained in detail according to embodiments with reference to the drawings.
第９図は本発明の１実施例を示す断面図で、１
９はTFTを液晶から保護するためのシール部で
ある。第１０図はその平面図を示す。本発明に係
る液晶表示セルの製作工程を第９図に従つて説明
する。基板１上に表示セグメント及び表示セグメ
ントの容量を補うキヤパシタ（第５図における
Cs）を形成するために透明導電膜１５、真空蒸着
法、スパツタリングあるいはCVDなどで付けた
SiO2，Al2O3などの高誘電体層１６、そして表示
セグメントにもなるべき透明導電膜１７を形成さ
せる。次に第１図から第４図で説明したような工
程と条件でTFTを形成し、セグメント部の透明
導電膜１７とTFTのドレイン線６を電気的に結
ぶ。さらに液晶を配向しやすくするための表面処
理層として、SiO，SiO2，Al2O3，Si3N4などの
絶縁膜１８を付着させる。そして一方の対向電極
として透明導電膜１０及び絶縁層１４を付着させ
た基板１１とをスクリーン印刷によりシール材１
３及び本実施例の特徴となるシール部１９を介し
て貼り合わせ、シール材を硬化させる。このよう
にシール材を介在させることにより相対向する基
板間の空間は第１０図のように表示セグメントを
含む区域がTFTを配列した区域から隔離され、
表示セグメント区域に液晶を充填することにより
TFTとは非接触状態で液晶が両基板間に封入保
持されることになる。液晶の注入が完了すると注
入孔を封止する。TFTを含む空間にはArやN2な
ど不活性ガスで置換させることにより空気中の水
分の影響によるTFTの特性劣化を防ぐようにし
ておく。これによりTFTの表面には液晶が接触
しない為、Rpff／Rpo比が落ちることはない。 FIG. 9 is a sectional view showing one embodiment of the present invention.
9 is a sealing part for protecting the TFT from the liquid crystal. FIG. 10 shows a plan view thereof. The manufacturing process of the liquid crystal display cell according to the present invention will be explained with reference to FIG. A display segment and a capacitor for supplementing the capacity of the display segment are provided on the substrate 1 (see FIG.
C s ), a transparent conductive film 15 was attached by vacuum evaporation, sputtering, CVD, etc.
A high dielectric layer 16 of SiO 2 , Al 2 O 3 or the like, and a transparent conductive film 17 which also serves as display segments are formed. Next, a TFT is formed using the steps and conditions described in FIGS. 1 to 4, and the transparent conductive film 17 of the segment portion and the drain line 6 of the TFT are electrically connected. Furthermore, an insulating film 18 of SiO, SiO 2 , Al 2 O 3 , Si 3 N 4 or the like is deposited as a surface treatment layer to facilitate the alignment of the liquid crystal. Then, a substrate 11 having a transparent conductive film 10 and an insulating layer 14 attached as one counter electrode is attached to the sealing material 1 by screen printing.
3 and the sealing material is bonded together via the sealing portion 19, which is a feature of this embodiment, and the sealing material is cured. By interposing the sealing material in this way, the space between the opposing substrates is such that the area containing the display segments is isolated from the area where the TFTs are arranged, as shown in FIG.
By filling the display segment area with liquid crystal
The liquid crystal is sealed and held between both substrates without contacting the TFT. When the injection of liquid crystal is completed, the injection hole is sealed. The space containing the TFT is replaced with an inert gas such as Ar or N 2 to prevent deterioration of the TFT characteristics due to the influence of moisture in the air. As a result, the liquid crystal does not come into contact with the TFT surface, so the R pff /R po ratio does not drop.
ところで、TFTを液晶から保護する方法とし
てすでに特願昭53−35635号（特開昭54−127699
号）で記されているようにTFT表面にAl2O3を保
護膜として覆う方法があるのがこの場合、第８図
のようなセル構造をとり絶縁膜１８がAl2O3膜と
なるがTFTにとつては有効な保護膜となつても
表示セグメント上での絶縁膜Al2O3が配向処理法
や使用液晶との相性、セルの信頼性として必ずし
も効果的であるとも限らない。 By the way, Japanese Patent Application No. 53-35635 (Japanese Unexamined Patent Publication No. 54-127699
In this case, there is a method of covering the TFT surface with Al 2 O 3 as a protective film, as described in No. 1).In this case, the cell structure as shown in Figure 8 is taken and the insulating film 18 becomes an Al 2 O 3 film. Although it is an effective protective film for TFT, the insulating film Al 2 O 3 on the display segment is not necessarily effective in terms of alignment processing method, compatibility with the liquid crystal used, or cell reliability.
その場合、さらにAl2O3上に他の種類の絶縁膜
を付着させることが必要となり、製作工程数が増
える。本発明のようにTFT区域と表示セグメン
ト区域をシール部で隔離すると上記のような問題
も解消され、絶縁膜１８は専ら表示セグメント上
の絶縁膜としてもつとも有効な方法かつ物質を選
定することができる。 In that case, it is necessary to further deposit another type of insulating film on the Al 2 O 3 , which increases the number of manufacturing steps. If the TFT area and the display segment area are separated by a sealing part as in the present invention, the above-mentioned problems are solved, and even if the insulating film 18 is used exclusively as an insulating film on the display segment, an effective method and material can be selected. .
以上のようにTFTをシール材で液晶から隔離
することによりTFTの特性は液晶を挾持する前
の特性と比較して変化することなく、液晶表示装
置に用いてもTFTの良好な特性を有効に利用す
ることができる。 As described above, by isolating the TFT from the liquid crystal with a sealant, the characteristics of the TFT do not change compared to the characteristics before sandwiching the liquid crystal, and the good characteristics of the TFT can be effectively used even when used in a liquid crystal display device. can be used.
第１図は本発明の１実施例に使用するTFTの
断面図、第２図、第３図及び第４図はTFTの別
の実施例を示す断面図、第５図はTFTを液晶表
示装置に用いたときの回路図、第６図は液晶表示
装置の要部平面図、第７図はTFTの劣化を示す
説明図で第７図ａは液晶に接触前第７図ｂは液晶
と接触後、に対応している。第８図はTFTを保
護膜で被覆した場合の実施例（部分断面図）、第
９図は本発明の実施例を示す部分断面図、第１０
図は本発明の実施例を示す液晶表示セルの斜視図
である。
１…基板、２…ゲート電極、３…絶縁層、４…
半導体層、５…ソース電極、６…ドレイン電極、
７…ゲート線、８…ソース線、９…半導体、１０
…透明導電膜、１１…対向基板、１２…液晶、１
３…シール材、１４…絶縁層、１５…透明導電
膜、１６…強誘電体層、１７…透明導電膜、１８
…絶縁膜、１９…シール材、２０…液晶表示部、
２１…TFTアレイ部、２２…シール部、２３…
液晶注入孔、２４…表示電極端子引出し部、２５
…対向電極端子引出し部。
FIG. 1 is a sectional view of a TFT used in one embodiment of the present invention, FIGS. 2, 3, and 4 are sectional views showing another embodiment of the TFT, and FIG. 5 is a sectional view of a TFT used in a liquid crystal display device. Figure 6 is a plan view of the main parts of the liquid crystal display device, Figure 7 is an explanatory diagram showing the deterioration of the TFT, Figure 7a is before contact with the liquid crystal, Figure 7b is when it is in contact with the liquid crystal. After that, it corresponds to. Fig. 8 is an example (partial sectional view) in which TFT is coated with a protective film, Fig. 9 is a partial sectional view showing an embodiment of the present invention, and Fig. 10 is a partial sectional view showing an embodiment of the present invention.
The figure is a perspective view of a liquid crystal display cell showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Gate electrode, 3...Insulating layer, 4...
semiconductor layer, 5... source electrode, 6... drain electrode,
7... Gate line, 8... Source line, 9... Semiconductor, 10
...Transparent conductive film, 11...Counter substrate, 12...Liquid crystal, 1
3... Sealing material, 14... Insulating layer, 15... Transparent conductive film, 16... Ferroelectric layer, 17... Transparent conductive film, 18
...Insulating film, 19...Sealing material, 20...Liquid crystal display section,
21...TFT array section, 22...seal section, 23...
Liquid crystal injection hole, 24...Display electrode terminal extraction part, 25
...Counter electrode terminal drawer.
Claims (1)
と該パターン電極の各々に対応して接続されるス
イツチング用薄膜トランジスタとを形成した表示
基板と、該表示基板と微小間隙を隔てて対面する
対向基板と、該両基板間にシール材で封止される
液晶層と、を具備して成る液晶表示装置におい
て、 前記表示基板面上で前記パターン電極が集合配
置された領域と前記薄膜トランジスタが集合配置
された領域を隔離する境界領域に即して前記シー
ル材を介在させ、前記液晶層を前記パターン電極
が集合配置された領域のみに封入したことを特徴
とする液晶表示装置。[Claims] 1. A display substrate on which a plurality of pattern electrodes forming a display pattern and switching thin film transistors connected to each of the pattern electrodes are formed, and a display substrate facing the display substrate across a small gap. and a liquid crystal layer sealed with a sealant between the two substrates, wherein a region where the patterned electrodes are arranged in clusters and a region where the thin film transistors are arranged on the surface of the display substrate are A liquid crystal display device, characterized in that the sealing material is interposed along a boundary area that isolates the areas where the patterned electrodes are arranged in clusters, and the liquid crystal layer is encapsulated only in the area where the patterned electrodes are arranged in clusters.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9836779A JPS5622473A (en) | 1979-07-31 | 1979-07-31 | Liquid crystal display unit |
| GB8024121A GB2056739B (en) | 1979-07-30 | 1980-07-23 | Segmented type liquid crystal display and driving method thereof |
| US06/172,175 US4385292A (en) | 1979-07-30 | 1980-07-25 | Segmented type liquid crystal display and driving method thereof |
| DE3028717A DE3028717C2 (en) | 1979-07-30 | 1980-07-29 | Liquid crystal display |
| US06/419,015 US4486748A (en) | 1979-07-30 | 1982-09-16 | Segmented type liquid crystal display and driving method thereof |
| GB08317206A GB2126400B (en) | 1979-07-30 | 1983-06-24 | A segmented type liquid crystal display and driving memory thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9836779A JPS5622473A (en) | 1979-07-31 | 1979-07-31 | Liquid crystal display unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5622473A JPS5622473A (en) | 1981-03-03 |
| JPS6361671B2 true JPS6361671B2 (en) | 1988-11-29 |
Family
ID=14217901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9836779A Granted JPS5622473A (en) | 1979-07-30 | 1979-07-31 | Liquid crystal display unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5622473A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11126422B2 (en) | 2019-03-07 | 2021-09-21 | Panasonic Intellectual Property Management Co., Ltd. | Program update system, control system, mobile body, program update method, recording medium |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS582344A (en) * | 1981-06-30 | 1983-01-07 | Osaka Soda Co Ltd | Vulcanizable rubber composition having excellent resistance to nitrogen oxide |
| JPS582343A (en) * | 1981-06-30 | 1983-01-07 | Osaka Soda Co Ltd | Vulcanizable rubber composition having excellent resistance to nitrogen oxide |
| JPH06100744B2 (en) * | 1981-11-20 | 1994-12-12 | 三菱電機株式会社 | Matrix-type liquid crystal display device manufacturing method |
| JPH065465B2 (en) * | 1985-02-01 | 1994-01-19 | セイコー電子工業株式会社 | Liquid crystal display device sealing structure |
| JPS61129682A (en) * | 1985-11-12 | 1986-06-17 | シャープ株式会社 | Liquid crystal display |
| EP1420285B1 (en) * | 1997-04-21 | 2008-11-12 | Seiko Epson Corporation | Liquid crystal display device, method of manufacturing the same and electronic equipment |
| JP3838393B2 (en) | 1997-09-02 | 2006-10-25 | 株式会社半導体エネルギー研究所 | Display device with built-in image sensor |
-
1979
- 1979-07-31 JP JP9836779A patent/JPS5622473A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11126422B2 (en) | 2019-03-07 | 2021-09-21 | Panasonic Intellectual Property Management Co., Ltd. | Program update system, control system, mobile body, program update method, recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5622473A (en) | 1981-03-03 |
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