JPS61225869A - Thin film transistor device and manufacture thereof - Google Patents

Thin film transistor device and manufacture thereof

Info

Publication number
JPS61225869A
JPS61225869A JP6816985A JP6816985A JPS61225869A JP S61225869 A JPS61225869 A JP S61225869A JP 6816985 A JP6816985 A JP 6816985A JP 6816985 A JP6816985 A JP 6816985A JP S61225869 A JPS61225869 A JP S61225869A
Authority
JP
Japan
Prior art keywords
film
insulating film
wirings
coating
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6816985A
Inventor
Masafumi Shinpo
Original Assignee
Seiko Instr & Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr & Electronics Ltd filed Critical Seiko Instr & Electronics Ltd
Priority to JP6816985A priority Critical patent/JPS61225869A/en
Publication of JPS61225869A publication Critical patent/JPS61225869A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78636Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device

Abstract

PURPOSE:To enhance the withstand voltage between electrodes by forming gate electrode wirings, a gate insulating film and a thin semiconductor film as substantially equal shape insulator regions, and coating the side end of the wirings with a field insulating film for coating the side of the insulator region. CONSTITUTION:Gate electrode wirings 2, a gate insulating film 3 and a semiconductor thin film 4 are formed in the shape necessary as the gate electrode wirings an insulator regions 10 having substantially the same ends on an insulating substrate 1 such as a glass. A field insulating film 7 is used with good stepwise difference coating property to cover the side of the region 10. A drain electrode 5 is contacted with the film 4, and extended on the film 7. A source electrode 6 is contacted with the film 4, and extended on the film 7 to form a picture element electrode.
JP6816985A 1985-03-29 1985-03-29 Thin film transistor device and manufacture thereof Pending JPS61225869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6816985A JPS61225869A (en) 1985-03-29 1985-03-29 Thin film transistor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6816985A JPS61225869A (en) 1985-03-29 1985-03-29 Thin film transistor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS61225869A true JPS61225869A (en) 1986-10-07

Family

ID=13365994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6816985A Pending JPS61225869A (en) 1985-03-29 1985-03-29 Thin film transistor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS61225869A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182862A (en) * 1987-01-23 1988-07-28 Nec Corp Manufacture of thin film field-effect transistor
JPS63221680A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of thin-film transistor
JPS6484669A (en) * 1987-09-26 1989-03-29 Casio Computer Co Ltd Thin film transistor
US6018181A (en) * 1990-10-12 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and manufacturing method thereof
JPWO2007097068A1 (en) * 2006-02-24 2009-07-09 シャープ株式会社 Active matrix substrate, display device, television receiver
JP2009158941A (en) * 2007-12-03 2009-07-16 Semiconductor Energy Lab Co Ltd Manufacturing method of thin film transistor and manufacturing method of display device
JP2009231828A (en) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
JP2009230128A (en) * 2008-02-27 2009-10-08 Semiconductor Energy Lab Co Ltd Liquid crystal display device and manufacturing method thereof, and electronic apparatus
JP2009246352A (en) * 2008-03-11 2009-10-22 Semiconductor Energy Lab Co Ltd Method for manufacturing thin film transistor, and method for manufacturing display device
JP2010028103A (en) * 2008-06-17 2010-02-04 Semiconductor Energy Lab Co Ltd Thin film transistor, method of manufacturing the same, display device, and method of manufacturing the device
JP2010212677A (en) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd Method of manufacturing thin-film transistor and method of manufacturing display device
JP2010230950A (en) * 2009-03-27 2010-10-14 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
JP2011228560A (en) * 2010-04-22 2011-11-10 Hitachi Displays Ltd Image display device and manufacturing method of the same
US8168980B2 (en) 2006-02-24 2012-05-01 Sharp Kabushiki Kaisha Active matrix substrate, display device, television receiver, manufacturing method of active matrix substrate, forming method of gate insulating film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59225569A (en) * 1983-06-06 1984-12-18 Fujitsu Ltd Manufacture of self-aligning thin film transistor
JPS61185783A (en) * 1985-02-13 1986-08-19 Sharp Kk Manufacture of thin film transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59225569A (en) * 1983-06-06 1984-12-18 Fujitsu Ltd Manufacture of self-aligning thin film transistor
JPS61185783A (en) * 1985-02-13 1986-08-19 Sharp Kk Manufacture of thin film transistor

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63182862A (en) * 1987-01-23 1988-07-28 Nec Corp Manufacture of thin film field-effect transistor
JPS63221680A (en) * 1987-03-10 1988-09-14 Nec Corp Manufacture of thin-film transistor
JPS6484669A (en) * 1987-09-26 1989-03-29 Casio Computer Co Ltd Thin film transistor
US6018181A (en) * 1990-10-12 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Thin film transistor and manufacturing method thereof
JP4588785B2 (en) * 2006-02-24 2010-12-01 シャープ株式会社 Active matrix substrate, display device, television receiver
JPWO2007097068A1 (en) * 2006-02-24 2009-07-09 シャープ株式会社 Active matrix substrate, display device, television receiver
US8168980B2 (en) 2006-02-24 2012-05-01 Sharp Kabushiki Kaisha Active matrix substrate, display device, television receiver, manufacturing method of active matrix substrate, forming method of gate insulating film
US7868960B2 (en) 2006-02-24 2011-01-11 Sharp Kabushiki Kaisha Active matrix substrate, display device, and television receiver
JP2009158941A (en) * 2007-12-03 2009-07-16 Semiconductor Energy Lab Co Ltd Manufacturing method of thin film transistor and manufacturing method of display device
JP2009231828A (en) * 2008-02-26 2009-10-08 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
US8901561B2 (en) 2008-02-26 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP2014160849A (en) * 2008-02-27 2014-09-04 Semiconductor Energy Lab Co Ltd Thin film transistor
JP2009230128A (en) * 2008-02-27 2009-10-08 Semiconductor Energy Lab Co Ltd Liquid crystal display device and manufacturing method thereof, and electronic apparatus
JP2009246352A (en) * 2008-03-11 2009-10-22 Semiconductor Energy Lab Co Ltd Method for manufacturing thin film transistor, and method for manufacturing display device
JP2010028103A (en) * 2008-06-17 2010-02-04 Semiconductor Energy Lab Co Ltd Thin film transistor, method of manufacturing the same, display device, and method of manufacturing the device
US8709836B2 (en) 2009-02-16 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
JP2010212677A (en) * 2009-02-16 2010-09-24 Semiconductor Energy Lab Co Ltd Method of manufacturing thin-film transistor and method of manufacturing display device
JP2010230950A (en) * 2009-03-27 2010-10-14 Semiconductor Energy Lab Co Ltd Method for manufacturing display device
JP2011228560A (en) * 2010-04-22 2011-11-10 Hitachi Displays Ltd Image display device and manufacturing method of the same

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