JPS6359273B2 - - Google Patents
Info
- Publication number
- JPS6359273B2 JPS6359273B2 JP58053490A JP5349083A JPS6359273B2 JP S6359273 B2 JPS6359273 B2 JP S6359273B2 JP 58053490 A JP58053490 A JP 58053490A JP 5349083 A JP5349083 A JP 5349083A JP S6359273 B2 JPS6359273 B2 JP S6359273B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- chamber
- measurement
- wafer tray
- measurement chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 86
- 238000005259 measurement Methods 0.000 claims description 36
- 239000001307 helium Substances 0.000 claims description 25
- 229910052734 helium Inorganic materials 0.000 claims description 25
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 11
- 238000012805 post-processing Methods 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 8
- 238000007781 pre-processing Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000007689 inspection Methods 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、ジヨセフソン集積回路を形成したウ
エハにプローブ針を接触させ、その電気的特性を
試験するための試験機に係り、特に自動試験に好
適な試験機の構造に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a testing machine for testing the electrical characteristics of a wafer on which Josephson integrated circuits are formed by bringing a probe needle into contact therewith, and is particularly suitable for automatic testing. Regarding the structure of a testing machine.
〔従来技術〕
従来のジヨセフソン集積回路テスター（特開昭
58−50479号公報記載のジヨセフソン集積回路テ
スター）では、測定雰囲気が真空であり、ウエハ
の冷却はウエハ固定台の熱伝導のみによるもので
あつた。この方法では、回路素子の消費電力が大
きい時、ウエハ表面の素子が発生する熱を充分に
取り切れないという欠点があることがわかつた。
また、１枚のウエハの測定を終了した後、次のウ
エハと交換するためには、測定室内に空気あるい
はHeガスを導入し、極低温容器内の液体Heを完
全に気化させてから、フランジをはずしてウエハ
を交換する必要があつた。このため、交換に時間
がかかるという欠点や、液体Heを有効に利用で
きないという欠点があり、自動測定を行うために
は不適当であつた。[Prior art] Conventional Josephson integrated circuit tester
In the Josephson integrated circuit tester described in Publication No. 58-50479, the measurement atmosphere was vacuum, and the wafer was cooled only by heat conduction from the wafer fixing table. It has been found that this method has a drawback in that when the power consumption of circuit elements is large, the heat generated by the elements on the wafer surface cannot be sufficiently removed.
In addition, after measuring one wafer, in order to replace it with the next wafer, air or He gas is introduced into the measurement chamber to completely vaporize the liquid He in the cryogenic container, and then the flange is replaced with the next wafer. It was necessary to remove the wafer and replace it. For this reason, it has the disadvantage that it takes time to replace it and the disadvantage that liquid He cannot be used effectively, making it unsuitable for automatic measurement.
本発明の目的は、ウエハの測定時にウエハトレ
イ側からの熱伝導による冷却と測定室内にHeガ
スを導入することによるガス冷却を併用してウエ
ハの冷却を完全にし、また、ウエハトレイの移動
により、複数のウエハを自動的に測定することが
可能な低温自動テスターを提供することにある。
An object of the present invention is to completely cool the wafer by using a combination of heat conduction cooling from the wafer tray side and gas cooling by introducing He gas into the measurement chamber during wafer measurement, and to achieve multiple An object of the present invention is to provide a low-temperature automatic tester that can automatically measure wafers.
〔発明の概要〕
本発明の特徴の第１点はウエハの裏側に密着さ
せた治具の熱伝導による冷却とHeガスによる冷
却を併用してウエハの冷却能力を高めたことであ
る。特徴の第２点は、装置を前処理室、測定室、
後処理室に分離し、ウエハをウエハトレイに設置
した後、ウエハトレイごと前処理室で予冷し、測
定室で測定し、後処理室で室温にすることを繰り
返し、ウエハの自動測定を可能にしたことであ
る。[Summary of the Invention] The first feature of the present invention is that the wafer cooling capacity is increased by using a combination of cooling by heat conduction of a jig closely attached to the back side of the wafer and cooling by He gas. The second feature is that the device has a pretreatment chamber, a measurement chamber,
After separating the wafers into the post-processing chamber and placing the wafers on a wafer tray, the wafer tray is pre-cooled in the pre-processing chamber, measured in the measurement chamber, and brought to room temperature in the post-processing chamber repeatedly, making it possible to automatically measure wafers. It is.
以下、本発明の一実施例を図面により説明す
る。第１図は低温自動テスターの構造を示す断面
図である。本実施例は、３のブロツクに分解され
る。それらは前処理室１６、測定室１５、後処理
室１４である。前処理室１６と測定室１５の間に
は前室側ゲートバルブ９−１があり、測定室１５
と後処理室１４の間には後側ゲートバルブ９−２
がある。前処理室１６はウエハ３を設置した複数
のウエハトレイ１１を室温から液体窒素温まで予
冷するため、予冷用液体窒素容器１７を備えてい
る。測定室１５は、ウエハ３を液体ヘリウム温度
あるいは近傍の温度にするための液体ヘリウム容
器１とウエハ３を検査するためのプローブカード
４及びプローブカード微動ステージ６が付属して
いる。後処理室１４は液体ヘリウム温度で測定さ
れたウエハ３をウエハトレイ１１ごと受け入れ、
それらを結露などを起さない状態で液体ヘリウム
温度から室温まで赤外線加熱装置により、素子に
ヒロツクが生じない程度の遅い昇温速度で昇温す
る。ウエハトレイ１１の移動のためウエハトレイ
送り装置１８及びウエハトレイ停止装置１９があ
り、ウエハトレイ１１を移動する際には前室側ゲ
ートバルブ９−１及び後室側ゲートバルブ９−２
が開かれる。後処理室１４にはウエハトレイ１１
を１枚ずつ受け取るためのウエハトレイ受け台１
２が設置されている。ウエハトレイ１１の移動及
びプローブカード微動装置を制御して自動測定、
自動送りを行うためのコントローラ２１が付属し
ている。第２図及び第３図はウエハ３の冷却及び
プローブカード４の微動の原理を示す模式図であ
る。ウエハ３を検査していない時及びウエハトレ
イ１１を移動している時は第２図に示すように測
定室及び前処理室、後処理室は真空に保たれる。
第３図のようにウエハトレイ１１が測定状態の位
置に固定され、さらにプローブカード４が検査す
べきチツプにプローブを接触させた後、ヘリウム
ガスが測定室内に導入され、ウエハ３は表面側か
らも冷却される。検査を終え、プローブカード４
を次のチツプ位置に移動する際には再度測定室内
を排気し、真空に保つてからプローブカードを移
動する。これは微動部が低温でかたくなつたりこ
おり付くのを防ぐためである。断熱材５の断熱効
果を大きくし、液体ヘリウム温度と、室温とを充
分に断熱でき、ウエハプローバ微動ステージ６を
室温に保つことができれば、チツプ位置の移動毎
に測定室内を排気する必要はない。第４図、第５
図、第６図はウエハトレイ１１の移動の原理を示
す断面図である。第１図と合わせて、ウエハ３の
移動及び測定の原理を説明する。ウエハ３は複数
のウエハトレイ１１に設置された後、第１図の前
処理室１６の中に設置される。次に前処理室１６
を窒素雰囲気にした後、予冷用液体窒素容器１７
に液体窒素を満たし、予冷を行う。第４図は測定
室１５にウエハトレイ１１を移動した際の断面図
である。充分に予冷した後、前処理室１６を排気
し、第４図に示すように前室側ゲートバルブ９−
１を開く、この時、測定室１５は真空になつてい
る。ウエハトレイ送り装置１８により第４図に示
すようにウエハトレイ１１を測定室の所定の位置
まで移動した後、ウエハトレイ送り装置１８を戻
し、前室側ゲートバルブを閉じる。第５図は測定
状態を示す断面図である。次に第５図に示すよう
に、プローブカード４をプローブカード微動ステ
ージ６により所定の位置に移動して、プローブカ
ード４をウエハ３の特定のチツプに接触させた
後、測定室排気及びヘリウムガス導入管２０によ
りヘリウムガスを測定室１５に導入し、ウエハ３
を冷却し検査を行う。この時、プローブカード微
動ステージ６がこおり付くのを防止するため断熱
材５を設置している。第６図は検査が終了してウ
エハトレイ１１が後処理室に移動した際の断面図
である。検査が終了すると測定室１５は排気さ
れ、前室側ゲートバルブ９−１と後室側ゲートバ
ルブ９−２が開かれ、ウエハトレイ送り装置１８
により、ウエハトレイ１１は後処理室１４まで送
られ、第６図に示すようにウエハトレイ受け台１
２上に落ちる。ウエハトレイ送り装置１８を戻
し、後室側ゲートバルブ９−２を閉じる。次に、
これまで動作させていたウエハトレイ停止装置１
９を一時的に解除して、前処理室１６に積層され
ているウエハトレイ１１を一枚だけ待期位置に落
す。ウエハトレイ停止装置１９を動作させ、待期
位置にあるウエハトレイ１１以外を固定した後、
ウエハトレイ送り装置１８により新らたなウエハ
トレイ１１を測定室１５の所定の位置に送り、次
の検査を始める。本実施例によれば、ジヨセフソ
ン集積回路などの低温で動作する素子の自動検査
を短時間のうちに、効率良く行うことができ、し
かも、液体ヘリウムを余分に消費することなし
に、複数枚のウエハを自動的に検査できるという
効果がある。また、液体ヘリウム容器１が測定室
１５と完全に分離しているため、液体ヘリウム容
器１を減圧あるいは加圧して液体ヘリウム温度近
傍の任意の温度で測定できるという効果もある。
この場合には、液体ヘリウム容器にヘリウムガス
排気管とともにヘリウムガス自動リーク弁を設置
し、ウエハ部に設置した温度センサの出力に応じ
て液体ヘリウム容器内のガス圧力を微調整して、
ウエハの温度を一定に保つようにする。第７図は
ウエハ３を上向きにウエハトレイ１１に設置する
実施例を示しており、極低温容器との熱的接触を
改善できるという効果がある。さらにウエハトレ
イ１１を沿直方向に立てた状態で測定し、移動す
る実施例では、液体ヘリウム容器内で発生する気
泡の影響を小さくできるという効果がある。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the structure of a low temperature automatic tester. This example is broken down into three blocks. They are a pretreatment chamber 16, a measurement chamber 15, and a posttreatment chamber 14. There is a front chamber side gate valve 9-1 between the pretreatment chamber 16 and the measurement chamber 15.
There is a rear gate valve 9-2 between the and after-treatment chamber 14.
There is. The pre-processing chamber 16 includes a pre-cooling liquid nitrogen container 17 for pre-cooling the plurality of wafer trays 11 on which the wafers 3 are placed from room temperature to liquid nitrogen temperature. The measurement chamber 15 is equipped with a liquid helium container 1 for bringing the wafer 3 to liquid helium temperature or a temperature close to it, a probe card 4 for inspecting the wafer 3, and a probe card fine movement stage 6. The post-processing chamber 14 receives the wafer 3 measured at liquid helium temperature along with the wafer tray 11,
They are heated from liquid helium temperature to room temperature using an infrared heating device without causing dew condensation, etc., at a slow heating rate that does not cause any hillocks on the elements. There is a wafer tray feeding device 18 and a wafer tray stopping device 19 for moving the wafer tray 11, and when moving the wafer tray 11, a front chamber side gate valve 9-1 and a rear chamber side gate valve 9-2 are used.
will be held. A wafer tray 11 is provided in the post-processing chamber 14.
Wafer tray holder 1 for receiving wafers one by one
2 is installed. Automatic measurement by controlling the movement of the wafer tray 11 and the probe card fine movement device,
A controller 21 for automatic feeding is attached. 2 and 3 are schematic diagrams showing the principle of cooling the wafer 3 and micro-movement of the probe card 4. FIG. When the wafer 3 is not being inspected or the wafer tray 11 is being moved, the measurement chamber, pre-processing chamber, and post-processing chamber are kept in vacuum as shown in FIG.
As shown in FIG. 3, after the wafer tray 11 is fixed in the measurement position and the probe card 4 brings the probe into contact with the chip to be tested, helium gas is introduced into the measurement chamber, and the wafer 3 is exposed from the front side. cooled down. After completing the test, probe card 4
When moving the probe card to the next chip position, the measurement chamber is evacuated again to maintain a vacuum before moving the probe card. This is to prevent the micro-moving parts from becoming hard or frozen at low temperatures. If the heat insulating effect of the heat insulating material 5 is increased to sufficiently insulate the liquid helium temperature from the room temperature, and if the wafer prober fine movement stage 6 can be kept at room temperature, there is no need to exhaust the inside of the measurement chamber each time the chip position is moved. . Figures 4 and 5
6 are cross-sectional views showing the principle of movement of the wafer tray 11. FIG. The principle of movement and measurement of the wafer 3 will be explained in conjunction with FIG. After the wafers 3 are placed on a plurality of wafer trays 11, they are placed in the preprocessing chamber 16 shown in FIG. Next, the pretreatment chamber 16
After creating a nitrogen atmosphere, the pre-cooling liquid nitrogen container 17
Fill with liquid nitrogen and pre-cool. FIG. 4 is a cross-sectional view when the wafer tray 11 is moved to the measurement chamber 15. After sufficiently precooling, the pretreatment chamber 16 is evacuated, and the pretreatment chamber side gate valve 9- is opened as shown in FIG.
1 is opened. At this time, the measurement chamber 15 is in a vacuum state. After the wafer tray 11 is moved to a predetermined position in the measurement chamber by the wafer tray transport device 18 as shown in FIG. 4, the wafer tray transport device 18 is returned and the front chamber side gate valve is closed. FIG. 5 is a sectional view showing the measurement state. Next, as shown in FIG. 5, the probe card 4 is moved to a predetermined position by the probe card fine movement stage 6, and after the probe card 4 is brought into contact with a specific chip of the wafer 3, the measurement chamber is evacuated and helium gas is Helium gas is introduced into the measurement chamber 15 through the introduction pipe 20, and the wafer 3
Cool and inspect. At this time, a heat insulating material 5 is installed to prevent the probe card fine movement stage 6 from getting cold. FIG. 6 is a sectional view when the wafer tray 11 is moved to the post-processing chamber after the inspection is completed. When the inspection is completed, the measurement chamber 15 is evacuated, the front chamber side gate valve 9-1 and the rear chamber side gate valve 9-2 are opened, and the wafer tray feeding device 18 is opened.
As a result, the wafer tray 11 is sent to the post-processing chamber 14, and as shown in FIG.
Fall on top of 2. The wafer tray feeding device 18 is returned and the rear chamber side gate valve 9-2 is closed. next,
Wafer tray stop device 1 that has been operating so far
9 is temporarily released, and only one wafer tray 11 stacked in the preprocessing chamber 16 is dropped into the waiting position. After operating the wafer tray stop device 19 and fixing the wafer trays other than the wafer tray 11 in the waiting position,
A new wafer tray 11 is sent to a predetermined position in the measurement chamber 15 by the wafer tray feeding device 18, and the next inspection is started. According to this embodiment, it is possible to automatically test elements that operate at low temperatures, such as Josephson integrated circuits, in a short period of time and efficiently. This has the effect of automatically inspecting wafers. Furthermore, since the liquid helium container 1 is completely separated from the measurement chamber 15, there is an effect that measurement can be performed at any temperature near the liquid helium temperature by reducing or pressurizing the liquid helium container 1.
In this case, a helium gas automatic leak valve is installed in the liquid helium container along with a helium gas exhaust pipe, and the gas pressure in the liquid helium container is finely adjusted according to the output of a temperature sensor installed in the wafer area.
Try to keep the wafer temperature constant. FIG. 7 shows an embodiment in which the wafer 3 is placed facing upward on the wafer tray 11, which has the effect of improving thermal contact with the cryogenic container. Furthermore, in the embodiment in which the wafer tray 11 is measured while standing in the vertical direction and then moved, there is an effect that the influence of air bubbles generated in the liquid helium container can be reduced.
本発明によれば、ジヨセフソン集積回路の検査
をウエハ状態で行うことができ、検査時間を著し
く短縮することができる。さらに、ウエハをウエ
ハトレイに設置して、複数のウエハの検査を連続
的に行い、検査時間の短縮効果をさらに高めるこ
とができる。また、前処理室で予冷を行い、ウエ
ハの交換時に液体ヘリウム容器を断熱状態に置く
ため、液体ヘリウムの蒸発量を小さくすることが
できる。検査時間の短縮はジヨセフソン集積回路
の開発及び生産に多大の効果をもたらし、液体ヘ
リウムを効率良く使用できることはジヨセフソン
集積回路の開発及び生産において経済的にも著し
い効果が期待できる。
According to the present invention, Josephson integrated circuits can be tested in the wafer state, and the testing time can be significantly shortened. Furthermore, by placing the wafers on a wafer tray and inspecting a plurality of wafers in succession, the effect of shortening inspection time can be further enhanced. Furthermore, since pre-cooling is performed in the pre-processing chamber and the liquid helium container is placed in an insulated state during wafer exchange, the amount of evaporation of liquid helium can be reduced. Reducing inspection time has a great effect on the development and production of Josephson integrated circuits, and the efficient use of liquid helium can be expected to have significant economic effects on the development and production of Josephson integrated circuits.
第１図は本発明の一実施例の断面図である。第
２図、第３図はウエハの冷却及びプローブカード
の微動の原理を示す模式図である。第４図、第５
図、第６図はウエハトレイの移動の原理を示す断
面図である。第７図は本発明の他の実施例の断面
図である。
１……液体ヘリウム容器、２……液体窒素容
器、３……ウエハ、４……プローブカード、５…
…断熱材、６……プローブカード微動ステージ、
７……プローブカード上下装置、８……微動ステ
ージ駆動装置、９−１……前室側ゲートバルブ、
９−２……後室側ゲートバルブ、１０−１……前
室側ゲートバルブ駆動装置、１０−２……後室側
ゲートバルブ駆動装置、１１……ウエハトレイ、
１２……ウエハトレイ受け台、１３……受け台駆
動装置、１４……後処理室、１５……測定室、１
６……前処理室、１７……予冷用液体窒素容器、
１８……ウエハトレイ送り装置、１９……ウエハ
トレイ停止装置、２０……測定室排気及びヘリウ
ムガス導入管、２１……ウエハトレイ移動装置及
びプローブカード微動装置コントローラ。
FIG. 1 is a sectional view of an embodiment of the present invention. FIGS. 2 and 3 are schematic diagrams showing the principle of cooling the wafer and micro-movement of the probe card. Figures 4 and 5
6 are cross-sectional views showing the principle of movement of the wafer tray. FIG. 7 is a sectional view of another embodiment of the invention. 1...Liquid helium container, 2...Liquid nitrogen container, 3...Wafer, 4...Probe card, 5...
...Insulation material, 6...Probe card fine movement stage,
7... Probe card up/down device, 8... Fine movement stage drive device, 9-1... Front chamber side gate valve,
9-2... Rear chamber side gate valve, 10-1... Front chamber side gate valve drive device, 10-2... Rear chamber side gate valve drive device, 11... Wafer tray,
12... Wafer tray pedestal, 13... pedestal driving device, 14... Post-processing chamber, 15... Measurement chamber, 1
6... Pre-treatment chamber, 17... Liquid nitrogen container for pre-cooling,
18... Wafer tray feeding device, 19... Wafer tray stopping device, 20... Measurement chamber exhaust and helium gas introduction pipe, 21... Wafer tray moving device and probe card fine movement device controller.
Claims (1)
る低温自動テスターにおいてウエハを搭載したウ
エハトレイを収納して予備冷却を行なう前処理室
と、前記前処理室から移送されたウエハトレイに
搭載されたウエハを測定するための測定室と、前
記測定室から取出したウエハトレイを室温に戻す
後処理室を備え、前記測定室の測定位置壁面の内
部は前記ウエハトレイを冷却するための液体ヘリ
ウム容器となし、かつ前記測定室には測定時にヘ
リウムガスを排気し、ウエハ移動時にヘリウムガ
スを排気して真空となす機構を備えたことを特徴
とする低温自動テスター。 ２ 前記液体ヘリウム容器は圧力が可変であるこ
とを特徴とする特許請求の範囲第１項に記載の低
温自動テスター。[Scope of Claims] 1. In a low-temperature automatic tester that tests Josephson integrated circuits in the wafer state, there is a pre-processing chamber in which a wafer tray loaded with wafers is stored and pre-cooled; a measurement chamber for measuring the wafers taken out from the measurement chamber; and a post-processing chamber for returning the wafer tray taken out from the measurement chamber to room temperature; the inside of the measurement position wall of the measurement chamber is a liquid helium container for cooling the wafer tray; and a low temperature automatic tester characterized in that the measurement chamber is equipped with a mechanism for exhausting helium gas during measurement and for creating a vacuum by exhausting helium gas during wafer movement. 2. The low temperature automatic tester according to claim 1, wherein the liquid helium container has a variable pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58053490A JPS59181076A (en) | 1983-03-31 | 1983-03-31 | Low temperature automatic tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58053490A JPS59181076A (en) | 1983-03-31 | 1983-03-31 | Low temperature automatic tester |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181076A JPS59181076A (en) | 1984-10-15 |
| JPS6359273B2 true JPS6359273B2 (en) | 1988-11-18 |
Family
ID=12944277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58053490A Granted JPS59181076A (en) | 1983-03-31 | 1983-03-31 | Low temperature automatic tester |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181076A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2517243B2 (en) * | 1986-09-11 | 1996-07-24 | 東京エレクトロン株式会社 | Probe device |
| US6213636B1 (en) * | 1998-08-21 | 2001-04-10 | Winbond Electronics Corp. | Furnace for testing integrated circuits |
-
1983
- 1983-03-31 JP JP58053490A patent/JPS59181076A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59181076A (en) | 1984-10-15 |
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