JPH0322454A - Semiconductor inspecting apparatus - Google Patents
Semiconductor inspecting apparatusInfo
- Publication number
- JPH0322454A JPH0322454A JP15768989A JP15768989A JPH0322454A JP H0322454 A JPH0322454 A JP H0322454A JP 15768989 A JP15768989 A JP 15768989A JP 15768989 A JP15768989 A JP 15768989A JP H0322454 A JPH0322454 A JP H0322454A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor
- cooler
- wafer mounting
- mounting stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 238000007689 inspection Methods 0.000 claims description 14
- 238000012360 testing method Methods 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 34
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体ウェハに多数形威された電子回路領域
の電気特性を検査するための半導体検査装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor inspection device for inspecting the electrical characteristics of multiple electronic circuit regions formed on a semiconductor wafer.
従来、半導体ウェハに多数形成された電子回路量の電気
特性を測定するの検査工程においては、ウェハを間欠的
に順次送りしながら自動的に電気的特性を検査し、良品
不良品の判定を行なうシステムがある。このシステムは
試験装置として通常ＩＣテスターと呼ばれる装置と、ウ
ェハの間欠送りを行ないウェハを検査する為にウェハと
の接触を行なう半導体検査装置（以後プローバと呼ぶ）
とで構成されている。Conventionally, in the inspection process for measuring the electrical characteristics of a large number of electronic circuits formed on a semiconductor wafer, the electrical characteristics are automatically inspected while the wafer is intermittently sequentially fed to determine whether the product is good or defective. There is a system. This system consists of two test devices, usually called an IC tester, and a semiconductor inspection device (hereinafter referred to as a prober) that performs intermittent feeding of the wafer and makes contact with the wafer to inspect the wafer.
It is made up of.
半導体ウェハの検査方法としては、種々の検査方法があ
り、たとえば、半導体ウェハを任意の温度に加熱し、半
導体装置の検査を行なう方法がある。通常、半導体装置
の生産においては、多品種の生産しており、必ずしも、
半導体ウェハを加熱するとは限らず、１００℃位の高温
に加熱し半導体ウェハの検査をする場合、または、２５
℃位の温度で検査する場合あるいは一数１０℃で検査す
る場合がある。There are various methods for testing semiconductor wafers. For example, there is a method in which semiconductor wafers are heated to a desired temperature and semiconductor devices are tested. Normally, in the production of semiconductor devices, a wide variety of products are produced, so
When inspecting a semiconductor wafer by heating it to a high temperature of about 100°C, or when inspecting a semiconductor wafer,
In some cases, the test is conducted at a temperature of around 10°C, or at a temperature of several 10°C.
上述した従来のプローバは、高温下でたとえば１００℃
で半導体ウェハの検査を終了後、２５℃付近の温度で半
導体ウェハの検査をしようとした場合特に冷却機構を備
えていないために１００℃から２５℃まで自然冷却する
のに約１００分位プローバを停止していなければならな
いという欠点があった。The above-mentioned conventional prober is heated at a high temperature of, for example, 100°C.
If you try to test the semiconductor wafer at a temperature around 25℃ after testing the semiconductor wafer at 100℃, it will take about 100 minutes to naturally cool the prober from 100℃ to 25℃, especially since it does not have a cooling mechanism. The drawback was that it had to be stopped.
本発明の目的は、かかる問題を解消する半導体検査装置
を提供することである。An object of the present invention is to provide a semiconductor inspection device that solves this problem.
１．本発明の第１の半導体検査装置は、半導体ウェハを
搭載するウェハ搭載台と、この半導体ウェハの表面に冷
却空気を吹きつける冷却機を有している。1. A first semiconductor inspection device of the present invention includes a wafer mounting table on which a semiconductor wafer is mounted, and a cooler that blows cooling air onto the surface of the semiconductor wafer.
２．本発明の第２の半導体検査装置は、半導体ウェハを
搭載するウェハ搭載台と、この搭載台に内蔵されるとと
もに前記半導体ウェハを冷却する冷却機を有している。2. A second semiconductor inspection device of the present invention includes a wafer mounting table on which a semiconductor wafer is mounted, and a cooler built into the mounting table and cooling the semiconductor wafer.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を示す半導体検査装置の模・
式断面図である。この半導体検査装置は、半導体ウェハ
１４を早退し間欠送りするためのウェハ搭載台４と、こ
れを移動させるためのＸＹ駆動部２とＺ駆動部３とがあ
り、これらの各々の駆動部とその他の機能を制御するた
めのコントロール８とがある。また、この半導体検査装
置には、半導体ウェハを冷却するための冷却機６を設け
たことである。FIG. 1 is a schematic diagram of a semiconductor inspection device showing an embodiment of the present invention.
FIG. This semiconductor inspection apparatus includes a wafer mounting table 4 for quickly retracting and intermittently feeding a semiconductor wafer 14, and an XY drive unit 2 and a Z drive unit 3 for moving the wafer, and each of these drive units and other There are also controls 8 for controlling the functions of. Further, this semiconductor inspection apparatus is provided with a cooler 6 for cooling the semiconductor wafer.
次に、この冷却機６に関して説明する。半導体ウェハ１
４を加熱しながら検査する方法がら、常温の約２７〜２
３℃の温度に戻し、常温での半導体ウェハ１４の検査を
行なおうとした場合、まず、ウェハ搭載台に向って斜の
上に設置されている冷却機６とウェハ搭載第４の下方斜
めよりウェハ搭載台４に向かって設置されている冷却機
６に高圧空気管７により圧縮空気供給し、この冷却機６
により急激に膨張させ、冷却された空気を噴出させる。Next, this cooler 6 will be explained. semiconductor wafer 1
The method of testing while heating 4 is about 27 to 2 at room temperature.
When the temperature is returned to 3°C and the semiconductor wafer 14 is to be inspected at room temperature, first, the cooler 6 and the wafer mounting stage 4 are installed diagonally from below, facing the wafer mounting table. Compressed air is supplied through a high-pressure air pipe 7 to a cooler 6 installed facing the wafer mounting table 4.
It expands rapidly and blows out cooled air.
このことは、各冷却機６のジュールトムソン効果を利用
したもので、最高を通して気体を圧力の高いところから
圧力の低いところへゆっくり気体を流す。この時に、圧
力差に比例した気体の温度変化を利用したものである。This utilizes the Joule-Thomson effect of each cooler 6, and allows the gas to slowly flow from a high-pressure area to a low-pressure area through the maximum cooling unit. At this time, the change in gas temperature that is proportional to the pressure difference is utilized.
これによりウェハ搭載台４が冷却される。As a result, the wafer mounting table 4 is cooled.
第２図は本発明の他の実施例を示す半導体検査装置の模
式断面図である。この半導体検査装置では、冷却機とし
て液体窒素を利用したものである。この冷却機構は、加
熱されているウェハ搭載台４に形成されている細孔１２
に対し、入口１０から出口１１に向かって液体窒素を流
すことによりウェハー搭載台４を冷却するものである。FIG. 2 is a schematic cross-sectional view of a semiconductor inspection device showing another embodiment of the present invention. This semiconductor inspection device uses liquid nitrogen as a cooler. This cooling mechanism consists of small holes 12 formed in the heated wafer mounting table 4.
On the other hand, the wafer mounting table 4 is cooled by flowing liquid nitrogen from the inlet 10 toward the outlet 11.
以上説明したように、本発明によると、ウェハ搭載第を
、例えば、１００℃から２５℃に冷却するのに従来は約
１００分費いやしていたのが、１０数分で冷却すること
が可能となる。このように、半導体ウェハを冷却する冷
却機を設けることによって、試験時間を大巾に短縮出来
る半導体検査装置が得られるという効果がある。As explained above, according to the present invention, it takes about 100 minutes to cool down the wafer mounting plate from, for example, 100°C to 25°C, but it can now be cooled in just over 10 minutes. Become. As described above, by providing a cooler for cooling the semiconductor wafer, it is possible to obtain a semiconductor inspection apparatus that can significantly shorten the test time.
第１図は本発明の一実施例を示す半導体検査装置の模式
断面図、第２図は本発明の他の実施例を示す半導体検査
装置の模式断面図である。
２・・・ＸＹ駆動部、３・・・Ｚ駆動部、４・・・ウェ
ハ搭載台、５・・・顕微鏡、６・・・冷却機、７・・・
高圧空気管、８・・・コントローラ、９・・・ヒータ、
１０・・・入口、１１・・・出口、１２・・・細孔、１
３・・・ＩＣテスタ、１４・・・半導体ウェハ。FIG. 1 is a schematic cross-sectional view of a semiconductor testing device showing one embodiment of the present invention, and FIG. 2 is a schematic cross-sectional view of a semiconductor testing device showing another embodiment of the present invention. 2...XY drive unit, 3...Z drive unit, 4...wafer mounting stand, 5...microscope, 6...cooler, 7...
High pressure air pipe, 8... controller, 9... heater,
10... Inlet, 11... Outlet, 12... Pore, 1
3...IC tester, 14...semiconductor wafer.
Claims (1)
体ウェハの表面に冷却空気を吹きつける冷却機を有する
ことを特徴とする半導体検査装置。 ２、半導体ウェハを搭載するウェハ搭載台と、この搭載
台に内蔵されるとともに前記半導体ウェハを冷却する冷
却器を有することを特徴とする請求項１の半導体検査装
置。[Scope of Claims] 1. A semiconductor inspection device characterized by having a wafer mounting table on which a semiconductor wafer is mounted, and a cooler that blows cooling air onto the surface of the semiconductor wafer. 2. The semiconductor inspection apparatus according to claim 1, further comprising a wafer mounting table on which a semiconductor wafer is mounted, and a cooler built into the mounting table and cooling the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15768989A JPH0322454A (en) | 1989-06-19 | 1989-06-19 | Semiconductor inspecting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15768989A JPH0322454A (en) | 1989-06-19 | 1989-06-19 | Semiconductor inspecting apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0322454A true JPH0322454A (en) | 1991-01-30 |
Family
ID=15655236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15768989A Pending JPH0322454A (en) | 1989-06-19 | 1989-06-19 | Semiconductor inspecting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0322454A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014145615A (en) * | 2013-01-28 | 2014-08-14 | Mitsubishi Electric Corp | Semiconductor evaluation device and semiconductor evaluation method |
| JP2021532582A (en) * | 2018-07-20 | 2021-11-25 | フォームファクター ビーバートン インコーポレイテッド | Probe system and method for collecting optical images of the device under test |
-
1989
- 1989-06-19 JP JP15768989A patent/JPH0322454A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014145615A (en) * | 2013-01-28 | 2014-08-14 | Mitsubishi Electric Corp | Semiconductor evaluation device and semiconductor evaluation method |
| US9335371B2 (en) | 2013-01-28 | 2016-05-10 | Mitsubishi Electric Corporation | Semiconductor evaluating device and semiconductor evaluating method |
| JP2021532582A (en) * | 2018-07-20 | 2021-11-25 | フォームファクター ビーバートン インコーポレイテッド | Probe system and method for collecting optical images of the device under test |
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