JPS6358383B2 - - Google Patents

Info

Publication number
JPS6358383B2
JPS6358383B2 JP10938979A JP10938979A JPS6358383B2 JP S6358383 B2 JPS6358383 B2 JP S6358383B2 JP 10938979 A JP10938979 A JP 10938979A JP 10938979 A JP10938979 A JP 10938979A JP S6358383 B2 JPS6358383 B2 JP S6358383B2
Authority
JP
Japan
Prior art keywords
density
gallium phosphide
light
nitrogen
type region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10938979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5632780A (en
Inventor
Junichi Nishizawa
Yasuo Okuno
Masayoshi Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10938979A priority Critical patent/JPS5632780A/ja
Publication of JPS5632780A publication Critical patent/JPS5632780A/ja
Publication of JPS6358383B2 publication Critical patent/JPS6358383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP10938979A 1979-08-27 1979-08-27 Gallium phosphide light emitting device Granted JPS5632780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10938979A JPS5632780A (en) 1979-08-27 1979-08-27 Gallium phosphide light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10938979A JPS5632780A (en) 1979-08-27 1979-08-27 Gallium phosphide light emitting device

Publications (2)

Publication Number Publication Date
JPS5632780A JPS5632780A (en) 1981-04-02
JPS6358383B2 true JPS6358383B2 (enrdf_load_html_response) 1988-11-15

Family

ID=14508988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10938979A Granted JPS5632780A (en) 1979-08-27 1979-08-27 Gallium phosphide light emitting device

Country Status (1)

Country Link
JP (1) JPS5632780A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2643396B2 (ja) * 1988-12-15 1997-08-20 日立電線株式会社 セラミックコンデンサに半田接合される板状のリード線

Also Published As

Publication number Publication date
JPS5632780A (en) 1981-04-02

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