JPS6357570U - - Google Patents

Info

Publication number
JPS6357570U
JPS6357570U JP15225686U JP15225686U JPS6357570U JP S6357570 U JPS6357570 U JP S6357570U JP 15225686 U JP15225686 U JP 15225686U JP 15225686 U JP15225686 U JP 15225686U JP S6357570 U JPS6357570 U JP S6357570U
Authority
JP
Japan
Prior art keywords
ion
sensitive membrane
sensor
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15225686U
Other languages
Japanese (ja)
Other versions
JPH0431585Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15225686U priority Critical patent/JPH0431585Y2/ja
Publication of JPS6357570U publication Critical patent/JPS6357570U/ja
Application granted granted Critical
Publication of JPH0431585Y2 publication Critical patent/JPH0431585Y2/ja
Expired legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案によるバイオセンサの一実施例
を示す斜視図、第2図は第1図のA―A′線断面
図である。 1…リード電極基板、2…センサチツプ、3…
接着剤、4…イオン感応性電界効果トランジスタ
、5…イオン感応膜、6…電極リード、7…プリ
ント電極、8…ボンデイングワイヤ、9…低温ワ
ツクス、10…絶縁膜。
FIG. 1 is a perspective view showing an embodiment of the biosensor according to the present invention, and FIG. 2 is a sectional view taken along the line AA' in FIG. 1... Lead electrode substrate, 2... Sensor chip, 3...
Adhesive, 4... Ion-sensitive field effect transistor, 5... Ion-sensitive film, 6... Electrode lead, 7... Printed electrode, 8... Bonding wire, 9... Low temperature wax, 10... Insulating film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] イオン感応膜を形成した構造を有する電界効果
トランジスタわらなるセンサチツプをリード電極
基板に実装したバイオセンサにおいて、前記イオ
ン感応膜以外の電極の露出部を低温ワツクスによ
り絶縁封止したことを特徴とするバイオセンサ。
A biosensor in which a sensor chip made of a field effect transistor straw having a structure in which an ion-sensitive membrane is formed is mounted on a lead electrode substrate, characterized in that exposed parts of the electrode other than the ion-sensitive membrane are insulated and sealed with low-temperature wax. sensor.
JP15225686U 1986-10-02 1986-10-02 Expired JPH0431585Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15225686U JPH0431585Y2 (en) 1986-10-02 1986-10-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15225686U JPH0431585Y2 (en) 1986-10-02 1986-10-02

Publications (2)

Publication Number Publication Date
JPS6357570U true JPS6357570U (en) 1988-04-16
JPH0431585Y2 JPH0431585Y2 (en) 1992-07-29

Family

ID=31070070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15225686U Expired JPH0431585Y2 (en) 1986-10-02 1986-10-02

Country Status (1)

Country Link
JP (1) JPH0431585Y2 (en)

Also Published As

Publication number Publication date
JPH0431585Y2 (en) 1992-07-29

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