JPS635661U - - Google Patents
Info
- Publication number
- JPS635661U JPS635661U JP9819486U JP9819486U JPS635661U JP S635661 U JPS635661 U JP S635661U JP 9819486 U JP9819486 U JP 9819486U JP 9819486 U JP9819486 U JP 9819486U JP S635661 U JPS635661 U JP S635661U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- magnetic field
- wavelength
- stabilization device
- absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 230000006641 stabilisation Effects 0.000 claims 3
- 238000011105 stabilization Methods 0.000 claims 3
- 239000010421 standard material Substances 0.000 claims 2
- 238000000862 absorption spectrum Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 230000000087 stabilizing effect Effects 0.000 description 2
Description
第1図は本考案に係る半導体レーザ波長安定化
装置の一実施例を示す構成ブロツク図、第2図は
第1図装置の動作を説明するための説明図、第3
図は第1図装置の動作を説明するための特性曲線
図、第4図は第1図装置の動作を説明するための
動作説明図、第5図は第1図装置の動作を説明す
るための第2の特性曲線図、第6図は本考案の第
2の実施例を示す要部構成ブロツク図、第7図〜
第9図は第2の実施例の動作を説明するための特
性曲線図、第10図は従来の半導体レーザ波長安
定化装置を示す構成ブロツク図である。
LD1…半導体レーザ、CI1…磁場印加手段
、CL1…吸収セル、PD1,PD2…光検出器
、fm…変調周波数、LA1…ロツクインアンプ
、CT2…PIDコントローラ、SG1…信号発
生器。
FIG. 1 is a configuration block diagram showing an embodiment of a semiconductor laser wavelength stabilizing device according to the present invention, FIG. 2 is an explanatory diagram for explaining the operation of the device shown in FIG. 1, and FIG.
The figures are characteristic curve diagrams for explaining the operation of the apparatus shown in Figure 1, Figure 4 is an operation explanatory diagram for explaining the operation of the apparatus shown in Figure 1, and Figure 5 is an illustration for explaining the operation of the apparatus shown in Figure 1. The second characteristic curve diagram of FIG. 6 is a main part configuration block diagram showing the second embodiment of the present invention, and FIGS.
FIG. 9 is a characteristic curve diagram for explaining the operation of the second embodiment, and FIG. 10 is a structural block diagram showing a conventional semiconductor laser wavelength stabilizing device. LD1...Semiconductor laser, CI1...Magnetic field application means, CL1...Absorption cell, PD1, PD2...Photodetector, fm ...Modulation frequency, LA1...Lock-in amplifier, CT2...PID controller, SG1...Signal generator.
Claims (1)
ザの波長を制御して波長を安定化する半導体レー
ザ波長安定化装置において、 特定の波長で吸収を起こす標準物質を封入し半
導体レーザの出力光に関連する光を入射する吸収
セルと、 この吸収セルに磁場を加える磁場印加手段と、 この磁場印加手段から出力する磁場の強さを一
定周波数で変化させる変調手段と、 前記吸収セルの透過光を電気信号に変換する光
検出器とを備え、 光検出器の出力電気信号に関連する信号で前記
半導体レーザの電流または温度を制御するように
構成したことを特徴とする半導体レーザ波長安定
化装置。 (2) 標準物質としてRbまたはCsを用いた実
用新案登録請求の範囲第1項記載の半導体レーザ
波長安定化装置。[Scope of claim for utility model registration] (1) In a semiconductor laser wavelength stabilization device that stabilizes the wavelength by controlling the wavelength of a semiconductor laser according to the absorption spectrum line of the standard material, a standard material that causes absorption at a specific wavelength is enclosed. an absorption cell into which light related to the output light of the semiconductor laser is incident; a magnetic field application means for applying a magnetic field to the absorption cell; a modulation means for changing the strength of the magnetic field output from the magnetic field application means at a constant frequency; and a photodetector that converts the transmitted light of the absorption cell into an electrical signal, and is configured to control the current or temperature of the semiconductor laser with a signal related to the output electrical signal of the photodetector. Semiconductor laser wavelength stabilization device. (2) The semiconductor laser wavelength stabilization device according to claim 1, which uses R b or C s as a standard substance.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9819486U JPS635661U (en) | 1986-06-26 | 1986-06-26 | |
GB8627744A GB2187592B (en) | 1985-12-26 | 1986-11-20 | Semiconductor laser wavelength stabilizer |
US06/937,359 US4833681A (en) | 1985-12-26 | 1986-12-03 | Semiconductor laser wavelength stabilizer |
US06/942,448 US4893353A (en) | 1985-12-20 | 1986-12-16 | Optical frequency synthesizer/sweeper |
US06/943,670 US4856899A (en) | 1985-12-20 | 1986-12-18 | Optical frequency analyzer using a local oscillator heterodyne detection of incident light |
DE3643569A DE3643569C2 (en) | 1985-12-20 | 1986-12-19 | Optical frequency analyzer |
GB8630374A GB2185619B (en) | 1985-12-20 | 1986-12-19 | Optical frequency synthesizer/sweeper |
GB8630375A GB2185567B (en) | 1985-12-20 | 1986-12-19 | Optical frequency analyzer |
DE3643553A DE3643553C2 (en) | 1985-12-20 | 1986-12-19 | Device for generating and wobbling optical frequencies |
DE3643629A DE3643629C2 (en) | 1985-12-26 | 1986-12-19 | Device for stabilizing the wavelength of a semiconductor laser |
US07/293,020 US4912526A (en) | 1985-12-20 | 1989-01-03 | Optical frequency synthesizer/sweeper |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9819486U JPS635661U (en) | 1986-06-26 | 1986-06-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS635661U true JPS635661U (en) | 1988-01-14 |
Family
ID=30965906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9819486U Pending JPS635661U (en) | 1985-12-20 | 1986-06-26 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS635661U (en) |
-
1986
- 1986-06-26 JP JP9819486U patent/JPS635661U/ja active Pending
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