JPS6353707A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPS6353707A JPS6353707A JP19538386A JP19538386A JPS6353707A JP S6353707 A JPS6353707 A JP S6353707A JP 19538386 A JP19538386 A JP 19538386A JP 19538386 A JP19538386 A JP 19538386A JP S6353707 A JPS6353707 A JP S6353707A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- film
- alloy
- amorphous alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 36
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 24
- 239000000956 alloy Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 229910003271 Ni-Fe Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910001004 magnetic alloy Inorganic materials 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 230000035699 permeability Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 48
- 230000004907 flux Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
不発明は高密度磁気記録に適した薄膜磁気ヘツドに係り
、特に上部および下部磁極の少くとも一方を、高飽和磁
束密度を有するCo系非晶質合金としこの上層又は下層
に金属あるいは合金層を設けたことを特徴とする薄膜磁
気ヘッド。Detailed Description of the Invention [Field of Industrial Application] The invention relates to a thin-film magnetic head suitable for high-density magnetic recording, and in particular, at least one of the upper and lower magnetic poles is made of a Co-based non-magnetic material having a high saturation magnetic flux density. A thin film magnetic head comprising a crystalline alloy and a metal or alloy layer provided above or below the crystalline alloy.
従来、薄膜磁気ヘッドの磁極を構成する磁性体としては
飽和磁束密度〜ITのNlce合金が使われてさたが、
記録密度向上のため飽和磁束密度を高める要求が強くな
っている。Conventionally, an Nlce alloy with a saturation magnetic flux density of ~IT has been used as the magnetic material constituting the magnetic pole of a thin-film magnetic head.
In order to improve recording density, there is an increasing demand for increasing saturation magnetic flux density.
たとえば薄膜磁気ヘッドの磁極を構成する磁性体として
飽和磁束密度〜1.4TのCo系非晶質合金膜を使用し
たものが、第7回日本応用磁気学会学術講演概要集、8
PA5に示されている。しかし、上部磁性膜と下部磁性
膜間を電気的および磁気的に絶縁する絶縁層としてホト
レジスト、PIQ(日立化成)などの有機樹脂を用い、
またギャップ層に5iCh 、 Alt03など無機材
料を用いる薄膜磁気ヘッドにGo系系非晶質全金膜応用
した場合に生じるとくに工業的規模での加工プロセス上
の問題点については配慮されていなかつた。For example, a Co-based amorphous alloy film with a saturation magnetic flux density of ~1.4 T is used as the magnetic material constituting the magnetic pole of a thin-film magnetic head.
Shown in PA5. However, organic resins such as photoresist and PIQ (Hitachi Chemical) are used as an insulating layer to electrically and magnetically insulate between the upper magnetic film and the lower magnetic film.
Further, no consideration was given to the problems that arise when Go-based amorphous all-gold films are applied to thin-film magnetic heads that use inorganic materials such as 5iCh and Alt03 for the gap layer, especially in processing on an industrial scale.
上記従来技術は、薄膜磁気ヘッドの加工プロセス上の問
題点についての配慮がされておらず、高温プロセスにお
けるCo系非晶質合金膜と有機樹脂間の反応、Co系非
晶質合金膜上に形成されるS jOz + AlzOs
等の膜に剥離が生じる等の問題があった。The above-mentioned conventional technology does not take into consideration the problems in the processing of thin-film magnetic heads, and the reaction between the Co-based amorphous alloy film and the organic resin in the high-temperature process, the reaction on the Co-based amorphous alloy film, etc. S jOz + AlzOs formed
There were problems such as peeling of the film.
本発明の目的は、上述した問題点を解決し、記録再生効
率にすぐれた薄膜磁気ヘッドを歩留りよく製造すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and to manufacture a thin film magnetic head with excellent recording and reproducing efficiency at a high yield.
上記問題点を解決し、記録再生効率の高い薄膜磁気ヘッ
ド製造を可能とするには、上部磁性層および下部磁性層
をCo系非晶質合金膜としこの上層又は下層又は両層を
金属あるいは合金膜とし、Co系非晶質合金膜とホトレ
ジストや有機樹脂あるいは5iCh* AtzOs
とが直接接触しないようにすることによシ達成される。In order to solve the above problems and make it possible to manufacture a thin film magnetic head with high recording and reproducing efficiency, the upper magnetic layer and the lower magnetic layer are made of a Co-based amorphous alloy film, and the upper layer, the lower layer, or both layers are made of a metal or an alloy. Co-based amorphous alloy film and photoresist, organic resin or 5iCh*AtzOs
This is achieved by preventing direct contact between the two.
本発明は、薄膜磁気ヘッドの上部磁極および下部磁極を
それぞれ高飽和磁束密度材料であるCo系非晶質合金と
しその上層または下層または両層を金属あるいは合金と
することにより、加工プロセス中に発生する諸問題を解
決したものである。The present invention solves the problem by forming the upper magnetic pole and the lower magnetic pole of the thin-film magnetic head with a Co-based amorphous alloy, which is a high saturation magnetic flux density material, and by forming the upper layer, the lower layer, or both layers with a metal or an alloy. This solution solves the problems that arise.
ここで、上部磁極およびF部磁極に設けられた金属ある
いは合金膜は、Co系非晶質合金が直接絶縁層であるポ
リイミド系樹脂層、あるいはギャップ層を形成するS
i Oz 、 A−/403等と接することをさけるた
めのものであり、高温プロセスにおけるポリイミド系樹
脂層とCo系非晶質合金との反応、Co系非晶質合金上
にスパッタされた5i(h。Here, the metal or alloy film provided on the upper magnetic pole and the F section magnetic pole is a polyimide resin layer in which a Co-based amorphous alloy directly forms an insulating layer, or an S
This is to avoid contact with the Co-based amorphous alloy and the reaction between the polyimide resin layer and the Co-based amorphous alloy in a high-temperature process, and the 5i (5i) sputtered on the Co-based amorphous alloy. h.
AlzOs等の剥離を防止する働きがある。よって、高
飽和磁束密度材料であるCo系非晶質合金膜を磁極の主
成分とする薄膜磁気ヘッドを歩留りよく製造することが
できるようになる、
〔実施例〕
以下1本発明の実施例を第1図により説明する。It has the function of preventing peeling of AlzOs, etc. Therefore, a thin film magnetic head whose magnetic pole is mainly composed of a Co-based amorphous alloy film which is a high saturation magnetic flux density material can be manufactured with high yield. [Example] The following is an example of the present invention. This will be explained with reference to FIG.
第1図は薄膜磁気ヘッドの断面を示す模式的な図である
。なお本発明と直接関係しない従来公知の部分だと沢、
は保護層や磁気コア後部を2層として厚くする等の構造
等については省略して示しである。FIG. 1 is a schematic diagram showing a cross section of a thin film magnetic head. It should be noted that there are conventionally known parts that are not directly related to the present invention.
Structures such as the protective layer and the thickening of the rear part of the magnetic core with two layers are omitted.
上下磁性J1ml、2はCo−’f’a−Zr系非晶質
合金膜をスパッタ法によシ作製したもので、膜厚は1μ
m前後でおる。上部磁性層の下地金属層7および下部磁
性ノーの上層の金属層8はCr膜であり、やはりスパッ
タ法にニジ作製され、膜厚は20人から1000人まで
の範囲を変化させたものである。Upper and lower magnetic J1ml, 2 is a Co-'f'a-Zr amorphous alloy film made by sputtering, and the film thickness is 1μ.
It's around m. The underlying metal layer 7 of the upper magnetic layer and the upper metal layer 8 of the lower magnetic layer are Cr films, which are also fabricated by the sputtering method, and the film thicknesses are varied from 20 to 1000. .
ギャップ層3は5jOzs絶縁層4はPIQ、基板5は
ZrO2,コイル6は鋼である。The gap layer 3 is made of 5jOzs, the insulating layer 4 is made of PIQ, the substrate 5 is made of ZrO2, and the coil 6 is made of steel.
第2図、第3図は保磁力60001!、厚み0.16μ
mのCo−γFe2O3スパッタディスク舟を用いて記
録再生評価を行ない、本発明の効果を示しだものである
。第2図はヘッドの浮上量0.2μmとした時2KPC
Iでの再生出力と上部磁性層、下部磁性層に設けられた
Cr膜厚との関係を示したものである。Figures 2 and 3 show a coercive force of 60001! , thickness 0.16μ
Recording and reproducing evaluations were carried out using a Co-γFe2O3 sputtered disk of 500 mm, and the effects of the present invention were demonstrated. Figure 2 shows 2KPC when the flying height of the head is 0.2μm.
This figure shows the relationship between the reproduction output at I and the thickness of the Cr film provided in the upper magnetic layer and the lower magnetic layer.
この実施例では、上下両磁性層の後部コンタクトは金属
層7.8を通して行なわれるため、上下両磁性層に設け
られたCr膜厚の和が後部コンタクト部におけるギイツ
プ長となる。In this embodiment, since the rear contact of both the upper and lower magnetic layers is made through the metal layer 7.8, the sum of the Cr film thicknesses provided on both the upper and lower magnetic layers becomes the gap length at the rear contact portion.
第2図よシ、このCr層厚が100Å以下であれば再生
出力の低下は起こらず、500人でもCr層を設けない
場合の80俤の再生出力が得られることがわかる。一方
、Co Ta7.r非晶質合金とPIQ間に設けるCr
層の厚みは20Å以上であれば、高温プロセス時に起こ
るC0TaZr非晶質合金、 PIQ間の反応を抑える
ことができ、また下部磁性層の上の金属層8は、金属層
7を形成する前にスパッタエッチ等によフ取う除くこと
ができる。As shown in FIG. 2, if the Cr layer thickness is 100 Å or less, the reproduction output does not decrease, and even with 500 people, a reproduction output of 80 Å can be obtained without providing the Cr layer. On the other hand, Co Ta7. r Cr provided between amorphous alloy and PIQ
If the layer thickness is 20 Å or more, it is possible to suppress the reaction between the C0TaZr amorphous alloy and PIQ that occurs during high-temperature processing, and the metal layer 8 on the lower magnetic layer is formed before forming the metal layer 7. It can be removed by sputter etching, etc.
以上のことから、上部磁性層の下にある金属層7の厚み
は20人〜100人程度が望ましい。From the above, it is desirable that the thickness of the metal layer 7 below the upper magnetic layer is about 20 to 100 layers.
また下部磁性層と基板との間に金属層を設けたり、上部
磁性層の上に金属層を設け、この上に形成される保護層
との密、J性を向上させることもできる。Crの他にN
b、Ti、’l’a、V、几り。Further, a metal layer can be provided between the lower magnetic layer and the substrate, or a metal layer can be provided on the upper magnetic layer to improve the density and J properties with the protective layer formed thereon. N in addition to Cr
b, Ti, 'l'a, V, 几り.
pt、Pd、W、Mo等を用いるCともできるが。It can also be C using pt, Pd, W, Mo, etc.
Crは400C程度の高温プロセスでも、PIQと反応
したり、(::o’l’aZr合金と反応して磁気特性
を劣化させることがないのでとくに望ましい。Cr is particularly desirable because it does not react with PIQ or react with the (::o'l'aZr alloy and deteriorate the magnetic properties) even in a high-temperature process of about 400C.
他の金属を用いる場合はプロセス経験温度を下げる必要
がめった。Nlpe合金は現在薄膜ヘッドの磁極材に用
いられておシ、これを金属層7.8として用いることも
できる。この場合上下両磁性層間の後部コンタクト部は
Nlpe合金によって、磁気的に完全にコンタクトされ
るので磁気特性上望ましいがプロセスの経験温度は若干
低めにする必要がある。When using other metals, it was often necessary to lower the process experience temperature. Nlpe alloys are currently used in the pole material of thin film heads, and can also be used as the metal layer 7.8. In this case, the rear contact portion between the upper and lower magnetic layers is in complete magnetic contact with the Nlpe alloy, which is desirable in terms of magnetic properties, but the process temperature must be slightly lower.
第3図は2Fを25KPCI、 I Fを5Ki’CI
とした時のオーバーライ)8/Nとヘッド浮上量との関
係を示したものである。直線11は不発明によシ作成し
た薄膜di気ヘッドで、Cr膜厚は0.05μmである
。直線12はパーマロイをd極材に用いた従来の4膜磁
気ヘツドである。このように、今回試作した薄膜磁気ヘ
ッドは浮上量増大にともなうオーバーライ)S/Nの低
下が少なく、浮上量0.3μmでもオーバーライド8/
N26dB以上であり、明らかに飽和磁束密度の大きな
Co系非晶質曾金を磁極材に用いた効果があられれてい
る。In Figure 3, 2F is 25KPCI and IF is 5Ki'CI.
This figure shows the relationship between the overlay (overlay) 8/N and the head flying height. A straight line 11 is a thin film dielectric head made by the inventor, and the Cr film thickness is 0.05 μm. A straight line 12 represents a conventional four-film magnetic head using permalloy as the d-pole material. In this way, the thin-film magnetic head that we prototyped this time shows little drop in S/N (override) as the flying height increases, and even with a flying height of 0.3 μm, the override 8/
N26 dB or more, which clearly shows the effectiveness of using Co-based amorphous metal as the magnetic pole material, which has a large saturation magnetic flux density.
Co系非晶質合金としては、CoTaZr合金の他にC
0NbZr合金、CoWzr合金を用いることができる
。これらの合金はいずれも磁歪零近傍の組成で飽和磁束
密度が1.0 T以上あシ、従来磁極材料として用いら
れてきたNi−1;”e合金の飽和磁束密度1.0Tよ
りも高いので、高い記録再生効率が得られる。他OCO
系非晶質合金、たとえばC0h40Zr合金などは飽和
磁束密度が高くないので来用上望ましくない。In addition to CoTaZr alloy, Co-based amorphous alloys include C
0NbZr alloy and CoWzr alloy can be used. All of these alloys have a composition near zero magnetostriction and a saturation magnetic flux density of 1.0 T or more, which is higher than the saturation magnetic flux density of 1.0 T for the Ni-1;e alloy, which has been conventionally used as a magnetic pole material. , high recording and reproducing efficiency can be obtained.Other OCO
Amorphous alloys such as C0h40Zr alloys do not have a high saturation magnetic flux density and are therefore undesirable for conventional use.
以上の実施例では、上部磁極および下部磁極をCo系非
晶質合金層と金属層よシなる多層構造として試作した薄
膜磁気ヘッドの効果を示した。In the above embodiments, the effects of a thin film magnetic head in which the upper magnetic pole and the lower magnetic pole were fabricated as a multilayer structure consisting of a Co-based amorphous alloy layer and a metal layer were demonstrated.
一方、上部磁極および下部磁極に金属層を設けずC::
oTaZr非晶質膜単層として薄膜磁気ヘッドを試作し
た結果、透磁率を改善するための4000の高温プロセ
ス中PIQとCoTaZr非晶貞膜間に反応が起こシ反
応生成物がCoTaZr非晶質膜上に付着した、この反
応のため透磁率は向上せず約500程度の値であるため
記録再生出力は本発明の1/3以下でめった。またC
OT a 7. r膜上に形成されるS i O2膜が
剥離する、という問題が発生したため、ヘッドの作製歩
留りが極端に低下した。On the other hand, C:: No metal layer is provided on the upper magnetic pole and the lower magnetic pole.
As a result of prototyping a thin film magnetic head using a single layer of oTaZr amorphous film, a reaction occurred between PIQ and CoTaZr amorphous film during a high temperature process of 4000 to improve magnetic permeability, and the reaction product was a CoTaZr amorphous film. Due to this reaction, the magnetic permeability did not improve and remained at a value of about 500, so the recording and reproducing output was less than 1/3 of that of the present invention. Also C
OT a7. Since a problem occurred in which the SiO2 film formed on the r film peeled off, the manufacturing yield of the head was extremely reduced.
PIQとの反応が生じないように4プロセス温度を低下
させると、透磁率が向上せず、記録再生出力は低い。し
たがって%本発明によらなければ高性能のヘッドを歩留
り良く作製できない。If the 4-process temperature is lowered so as not to cause a reaction with PIQ, the magnetic permeability does not improve and the recording/reproducing output is low. Therefore, unless the present invention is used, a high-performance head cannot be manufactured with good yield.
本発明によれば、高飽和磁束密度を有し、かつ透磁率の
高いCo系非晶質合金を、薄膜磁気ヘッドの上部磁極訃
よび下部磁極を構成する磁極材料として使用しても加工
プロセス上の問題が発生しないため、特に記録能力にす
ぐれた薄膜磁気ヘッドを歩留りよく製造することが可能
となるっAccording to the present invention, even if a Co-based amorphous alloy having high saturation magnetic flux density and high magnetic permeability is used as the magnetic pole material constituting the upper and lower magnetic poles of a thin-film magnetic head, it is difficult to process the material. Since no problems occur, it becomes possible to manufacture thin-film magnetic heads with particularly excellent recording performance at a high yield.
第1図は本発明の実Ja例である薄膜磁気ヘッド主要部
の断面図、第2図および第3図は本発明の詳細な説明す
るための図である。
1・・・上部磁性4s2・・・下部磁性層、3・・・磁
気ギャツブ、4・・・絶縁層、5・・・基板、6・・・
銅コイル、7・・・金属層、8・・・金属層。
代理人 弁理士 小川勝男、′へ
1゛X′
f I 図
Cr膵/!(A)
男3 図
スヘ゛−シン7”(pm)FIG. 1 is a sectional view of the main part of a thin film magnetic head which is a practical example of the present invention, and FIGS. 2 and 3 are diagrams for explaining the present invention in detail. DESCRIPTION OF SYMBOLS 1... Upper magnetic 4s2... Lower magnetic layer, 3... Magnetic gap, 4... Insulating layer, 5... Substrate, 6...
Copper coil, 7...metal layer, 8...metal layer. Agent: Patent attorney Katsuo Ogawa, 'to1゛X' f I Figure Cr pancreas/! (A) Male 3 Figure 7” (pm)
Claims (1)
極と上部磁極とよりなる磁気コア、両磁極を構成する上
下磁性層を電気的、磁気的に分離する絶縁層、該絶縁層
内にあつて信号の入出力を行なうコイル、および該基板
上にあつて該コイルと外部からの配線とを電気的に接続
する2本の引き出し線を有して構成した薄膜磁気ヘッド
において、該上部磁性層および下部磁性層の少なくとも
一方が、Co系非晶質合金膜からなり、該非晶質合金膜
の上下層のうち少なくとも一方の層が金属あるいは合金
膜であることを特徴とする薄膜磁気ヘッド。 2、特許請求の範囲第1項における薄膜磁気ヘッドにお
いて、上部磁極および/または下部磁極を構成するCo
系非晶質合金膜は、Ca−Ta−Zr、Co−Nb−Z
r、Co−W−Zrを主成分とする合金のいずれかであ
ることを特徴とする薄膜磁気ヘッド。 3、特許請求の範囲第1項における薄膜磁気ヘッドにお
いて、非晶質合金の上層または下層を構成する金属ある
いは合金はCr、Nb、Ti、Ta、V、Rh、Pt、
PdあるいはW、Mo等の高融点金属およびこれらを主
成分とする合金あるいはNi−Fe等の軟磁性合金であ
ることを特徴とする薄膜磁気ヘッド。 4、特許請求の範囲第1項記載の薄膜磁気ヘッドにおい
て、非晶質合金の上層または下層を構成する金属あるい
は合金はCrであることを特徴とする薄膜磁気ヘッド。 5、特許請求の範囲第1項記載の薄膜磁気ヘッドにおい
て、上部磁性層の下層を構成する金属はCrであり、そ
の厚みが0.07μm以下であることを特徴とする薄膜
磁気ヘッド。[Claims] 1. A magnetic layer is formed on a substrate to form a lower magnetic pole, a magnetic core consisting of the lower magnetic pole and an upper magnetic pole, and upper and lower magnetic layers constituting both magnetic poles are electrically and magnetically separated. An insulating layer, a coil located within the insulating layer for inputting and outputting signals, and two lead wires located on the substrate electrically connecting the coil and external wiring. In the thin film magnetic head, at least one of the upper magnetic layer and the lower magnetic layer is made of a Co-based amorphous alloy film, and at least one of the upper and lower layers of the amorphous alloy film is a metal or alloy film. A thin film magnetic head featuring: 2. In the thin-film magnetic head according to claim 1, Co forming the upper magnetic pole and/or the lower magnetic pole
The amorphous alloy film is made of Ca-Ta-Zr, Co-Nb-Z
1. A thin film magnetic head characterized in that it is made of any one of an alloy whose main components are Co-W-Zr and Co-W-Zr. 3. In the thin film magnetic head according to claim 1, the metal or alloy constituting the upper or lower layer of the amorphous alloy is Cr, Nb, Ti, Ta, V, Rh, Pt,
A thin film magnetic head characterized by being made of a high melting point metal such as Pd, W, or Mo, an alloy containing these as a main component, or a soft magnetic alloy such as Ni-Fe. 4. A thin film magnetic head according to claim 1, wherein the metal or alloy constituting the upper or lower layer of the amorphous alloy is Cr. 5. The thin-film magnetic head according to claim 1, wherein the metal forming the lower layer of the upper magnetic layer is Cr, and the thickness thereof is 0.07 μm or less.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61195383A JP2664139B2 (en) | 1986-08-22 | 1986-08-22 | Thin film magnetic head |
US07/085,719 US4943879A (en) | 1986-08-22 | 1987-08-17 | Thin film magnetic head including magnetic layers having high saturation magnetic flux density and metal film for avoiding deterioration during manufacturing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61195383A JP2664139B2 (en) | 1986-08-22 | 1986-08-22 | Thin film magnetic head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6353707A true JPS6353707A (en) | 1988-03-08 |
JP2664139B2 JP2664139B2 (en) | 1997-10-15 |
Family
ID=16340251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61195383A Expired - Fee Related JP2664139B2 (en) | 1986-08-22 | 1986-08-22 | Thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2664139B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59231723A (en) * | 1983-06-13 | 1984-12-26 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
JPS6134707A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Magnetic head |
-
1986
- 1986-08-22 JP JP61195383A patent/JP2664139B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59231723A (en) * | 1983-06-13 | 1984-12-26 | Matsushita Electric Ind Co Ltd | Thin film magnetic head |
JPS6134707A (en) * | 1984-07-27 | 1986-02-19 | Hitachi Ltd | Magnetic head |
Also Published As
Publication number | Publication date |
---|---|
JP2664139B2 (en) | 1997-10-15 |
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