JPS6352494A - Manufacture and module of photoelectric device - Google Patents

Abstract

PURPOSE:To eliminate a waste of a component to be supplied to the assembly of a package or the like and to reduce the frequency of occurrence of a reject by a method wherein the characteristic of a light-emitting device is measured in the form of a module so that only the module judged to be good is assembled into the package. CONSTITUTION:During a life test of a laser diode a large quantity of heat is generated from a laser diode chip 8. A substrate 5 receives this heat through an intermediary of an adhesion material such as solder or the like. The heat is quickly conducted to the whole region of the substrate 5 so that the heat can be dissipated to a heat sink 10 for mounting a module 4 while the characteristic is measured. Therefore, the life test, etc. can be completed without any trouble. The life test of this module 4 can be executed in the form almost similar to the state that the laser diode chip 8 is assembled into package. Only the chip which has been judged to be good is assembled into the package whose processing cost is high. The final inspection of the characteristic can be completed at the initial assembling stage. Through this constitution, it is possible to reduce the occurrence of a reject in the form of a finished product and to improve the yield.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a technology that is generally applicable and effective in manufacturing technology for optoelectronic devices, such as optoelectronic 'ATL's incorporating laser diode chips.

[Conventional technology]

Light sources for optical communications or digital audio discs,
Semiconductor laser elements with various structures have been developed as light sources for information processing devices such as video disks. As a light source for information processing devices such as digital audio discs and video discs, for example, Nikkei Electronics J, September 14, 1981 issue, p. 13, published by Nikkei McGraw-Hill, Inc.
Semiconductor lasers as described in 8 to P152 are known.

As shown in this document, this type of semiconductor laser device generally has a semiconductor laser element (
In addition to fixing the laser diode chip, the light intensity of the laser beam is monitored by a light receiving element attached to the main surface of the stem. Further, the laser light to be used is emitted outside the package through a window fitted with a transparent body in the ceiling of the camp attached to the main surface of the stem. Note that a lead, one end of which serves as an external terminal, is attached to the stem in a penetrating manner.

This lead is electrically insulated and fixed to a conductive stem via an insulator such as glass.

[Problem that the invention seeks to solve]

The performance and characteristics of a semiconductor laser device are largely determined by the semiconductor laser element (two laser diode chips), which is the center of its functionality, but to be more precise, the characteristics of a semiconductor laser device are determined by the integration of the laser diode chip into the package. It varies slightly depending on the difference in heat dissipation in the cold state,
This is different from the characteristics of the laser diode chip itself. Also,
In the characteristic evaluation test of a single laser diode chip, it is difficult to dissipate sufficient heat with the chip in its original state.
It is difficult to accurately predict the performance of a chip when it is assembled into a package using the information obtained from unit characteristic evaluation tests. In addition, chips are fragile and easily chipped, and because they are minute, they are difficult to handle.

For this reason, conventionally, after sorting the laser diode chips, they were assembled into a pan cage and a test was conducted to measure and evaluate the characteristics of the semiconductor laser device, including its life span, to obtain non-defective products.

However, the inventors have revealed that such a manufacturing process has problems in the following points. That is, in this manufacturing process, defective products are discarded at the final stage of assembly, so the labor and materials spent on manufacturing the defective products are wasted, which hinders the reduction in manufacturing costs of semiconductor laser devices. In particular, the cost of the package constituting the semiconductor laser device is high, as described in the above-mentioned document.

Another object of the present invention is to provide a module in which a characteristic evaluation test including a life test of a light emitting element can be performed before it is assembled into a package in the manufacture of optoelectronic devices.

Another object of the present invention is to provide a manufacturing technique for optoelectronic devices that can reduce manufacturing costs.

The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

[Means for solving problems]

A brief summary of typical inventions disclosed in this application is as follows.

That is, in manufacturing the semiconductor laser device of the present invention, after preparing an insulating substrate that has a pair of N poles on its main surface and satisfies heat dissipation conditions that enable the life test of a laser diode chip, the substrate is A module is manufactured by fixing a laser diode chip that has been determined to be good by screening onto one electrode via a top electrode, and electrically connecting the top electrode of this laser diode chip and the other electrode with a wire. . Thereafter, the module is placed on a heat sink with good heat dissipation, and the measuring needle of the measuring device is brought into contact with the electrode on the substrate without directly contacting the laser diode chip to conduct a characteristic test including a life test.

Next, a semiconductor laser device is manufactured by incorporating the module determined to be a good product by the characteristic measurement into a package.

[Effect]

According to the above means, the module mounts the laser diode chip on an insulating substrate that satisfies heat dissipation conditions that enable the lifespan test of the laser diode chip, and the lifespan of the laser diode chip can be verified without contacting the laser diode chip. The characteristics including tests are measured. Only products that are determined to be good are assembled into packages that require high processing costs, which means that the parts used for packaging and other assembly are not wasted, and the frequency of defective products can be significantly reduced. Labor during assembly work is not wasted, and the manufacturing cost of the semiconductor laser device can be reduced.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view showing a module according to an embodiment of the present invention, FIG. 2 is a flowchart showing the manufacturing process of a semiconductor laser device, FIG. The figure is a perspective view showing the quality inspection measurement of the laser diode in the same module.

This embodiment shows an example in which the present invention is applied to a semiconductor laser device serving as a light source for a compact disc.

Semiconductor laser device manufactured by the method of the present invention
The installation has a structure as shown in FIG.

Here, the structure of the semiconductor laser device in a completed product state will be explained. The semiconductor laser device consists of a plate-shaped stem 1, which is the main component of the assembly, and a camp 2 that is hermetically fixed to the main surface of the stem 1. The stem 1 is a circular metal plate with a thickness of several mm, and a copper heat sink 3 is installed in the center of its main surface (upper surface).
is fixed with brazing material, etc. A module 4 is fixed to the side surface of the heat sink 3.

This module 4, as shown in FIG. It consists of a laser diode chip (chip) 8 fixed with solder or the like, and a wire 9 that electrically connects an upper surface electrode (not shown) of this laser diode chip 8 to the other electrode PfA 7. A material with good thermal conductivity is selected for the insulating substrate 5, and the size and thickness are such that the life test of the laser diode chip 8 mounted on its main surface can be performed. That is, in a laser diode life test, a large amount of heat is generated from the laser diode chip 8, so the substrate 5 receives this heat through a bonding material such as solder, and quickly transmits it to the entire area of the substrate 5. As shown in FIG. 4, when measuring the characteristics, the heat can be dissipated to the heat sink 10 on which the module 4 is placed, so as not to interfere with life tests and the like. Thereby, this module 4 can be subjected to a lifespan test substantially similar to the state in which the laser diode chip 8 is assembled in the package.

Note that when measuring the characteristics of the laser diode chip 8, the measuring needle 11 of the measuring device is brought into contact with a pair of electrodes 6.7 on the main surface of the substrate 5, as shown in FIG. The measuring needle 11 is designed not to directly contact the electrode of the laser diode chip 8. With this consideration,
Since the measuring needle 11 does not hit the upper surface electrode of the laser diode chip 8, the laser diode chip 8 will not be chipped. Note that the contact portion of the tip of the measuring needle 11 for measurement is, for example, vertically Q and 3
mm, and the width is 0.24mm, so the height is 0.4mm.
Laser diode chip 8 with a width of 0.3 mm
Since there may be variations in the contact position when contacting the
The contact properties are not necessarily stable, and characteristic measurements performed by directly contacting the measuring needle 11 with the laser diode chip 8 have problems in terms of reliability.

On the other hand, a light receiving element 13 is fixed to the main surface of the stem 1 for receiving laser light 12 emitted from the lower end of the laser diode chip 8 and monitoring the optical output of the laser light 12. This light receiving element 13 is fixed to an inclined surface 14 provided on the main surface of the stem 1 via a bonding material (not shown). This prevents the reflected light from the light receiving surface of the light receiving element 13 of the laser light 12 emitted from the laser diode chip 8 from entering the window of the cap, which will be described later, thereby preventing disturbance of the far field image. This is to do so.

On the other hand, three leads 15 are fixed to the stem 1. One lead 15 is electrically and mechanically fixed to the back surface of the stem 1, and the other two leads 15 are attached to the stem 1.
It penetrates through the stem 1 and is electrically insulated and fixed to the stem 1 via an insulator 16 such as glass. The upper ends of the two rods 15 protruding from the main surface of the stem 1 are connected to respective electrodes of the laser diode chip 8 and the light receiving element 13 via wires 17 and 18, respectively. Further, since the substrate 5 of the module 4 is an insulator, the electrode 7 on the substrate 5 and the heat sink 3 which is electrically connected to one of the leads 15 are electrically connected via the wire 19. .

Further, a metal cap 2 having a window 20 is airtightly fixed to the main surface of the stem 1 to seal the laser diode chip 8, the heat sink 3, and the like. The window 2
0 is formed by airtightly closing a circular hole provided in the ceiling of the cap 2 with a transparent glass plate 21. Therefore, the laser beam 12 emitted from the upper end of the laser diode chip 8 passes through the transparent glass plate 21 and is emitted outside the package formed by the stem 1 and the camp 2.

The outer peripheral portion of the stem 1 includes a pair of V-shaped notches 22 and a rectangular notch 23, which are provided facing each other.
is provided and used for positioning during assembly.

Next, a method for manufacturing such a semiconductor laser device will be explained with reference to the flowchart shown in FIG.

First, the substrate 5 is prepared. As mentioned above, this substrate 5 is made of an insulator of a size and thickness that does not interfere with the life test of the laser diode chip 8, and has a pair of electrodes 6.7 on its main surface. is provided. Therefore, a laser diode chip 8 is fixed onto one electrode 6 on the main surface of the substrate 5 with solder or the like. As a result, the upper surface electrode of the laser diode chip 8 is also electrically connected to one electrode 6. Laser diode chip 8
After mounting, the upper surface electrode of this laser diode chip 8 and the other electrode 7 on the substrate 5 are connected with a wire 9, and the module 4 is manufactured as shown in FIG.

Next, characteristics of this module 4 are measured and evaluated. In measuring the characteristics, as shown in FIG. The characteristics of a large number of modules 4 are measured at a time. When the measuring needle 11 contacts the electrodes 6 and 7, laser beams 12 are emitted from both ends of the laser diode chip 8, so these laser beams 12 are monitored by a detector (not shown) arranged on the front side to measure the characteristics. will be held. For example, the modules 4 are mounted at regular intervals so as to fit into positioning grooves 24 provided on the main surface of the heat sink 10, and vacuum is applied from vacuum suction holes (not shown) provided at the bottom of the positioning grooves 24. The lower surface of the module 4 is brought into close contact with the heat sink 10 by suction. As a result, heat is quickly transferred from the module 4 to the heat sink 10, so characteristic tests such as life tests by applying DC power are performed after the laser diode chip 8 is assembled into a pan cage consisting of the stem 1 and the camp 2. Inspection items similar to characteristic inspections can be measured.

Next, the module 4 determined to be good in the characteristic measurement
only will be transferred to assembly. That is, the module 4 determined to be a good product is mounted on the heat sink 3 of the stem 1 to which the lead 15 and the light receiving element 13 are attached. after that,
Wire bonding is performed to electrically connect the leads 15 to predetermined electrodes of the laser diode chip 8 and the light receiving element 13. Next, the camp 2 is hermetically sealed on the main surface of the stem 1, and a semiconductor laser device as shown in FIG. 3 is manufactured.

According to such an embodiment, the following effects can be obtained.

(1) According to the present invention, a laser diode chip is mounted on a substrate and incorporated into a module that enables R final characteristic inspection, and then only those that are determined to be good by the final characteristic inspection are processed at a reduced processing cost. Since the product is incorporated into a package with high quality and the final characteristic inspection is performed at the early stage of assembly, there are fewer defects in the finished product and the yield is improved. is obtained.

(2) According to the above (1), according to the present invention, the frequency of defects occurring when the laser diode chip is assembled into a package is low, so package parts, etc. that have high processing costs are not wasted, and material costs are reduced. The effect of reducing this can be obtained.

(3) According to the above (1), according to the present invention, the frequency of defects occurring when the laser diode chip is assembled in the puff cage is low, so the labor to produce defective products is also reduced, and labor costs can be reduced. This effect can be obtained.

(4) According to the present invention, after the first chip sorting, the laser diode chips are mounted on the substrate and processed in the form of modules, so there is no contact with the laser diode chips, and there is no possibility of cracks or chips in the laser diode chips. , contamination, etc. do not occur, and the effects of improving the yield and quality of semiconductor laser devices can be achieved.

(5) According to the above items) to (4), according to the present invention, since assembly can be performed using a module that allows final characteristic inspection at the initial stage of assembly, the frequency of occurrence of defective products can be reduced.
A synergistic effect of reducing material cost, reducing wasted labor, and improving yield can be obtained by making it possible to provide a semiconductor laser device of excellent quality at a low cost.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor.

In the above description, the invention made by the present inventor was mainly applied to the manufacturing technology of semiconductor laser devices, which is the background field of application, but the present invention is not limited thereto. For example, the same effect can be obtained by applying the present invention to a photoelectronic device incorporating an edge-emitting type light emitting diode chip as a light emitting element.

However, the present invention can be applied to manufacturing techniques for optoelectronic devices incorporating light emitting elements.

〔Effect of the invention〕

A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.

In manufacturing the semiconductor laser device of the present invention, after preparing an insulating substrate that has a pair of electrodes on its main surface and satisfies heat dissipation conditions that enable a life test of a laser diode chip, one electrode of the substrate is prepared. A laser diode chip determined to be good by screening is fixed on the top via the top electrode, and the top electrode of this laser diode chip and the other electrode are electrically connected with a wire to manufacture a module, and then, The module is placed on a heat sink with good heat dissipation, and the measurement needle of the measuring device is brought into contact with the electrode on the substrate without directly contacting the laser diode chip, and the characteristics are inspected including a life test, and the characteristics are measured. Since semiconductor laser devices are manufactured by incorporating Mosier, which has been determined to be a good product by At the same time, labor in assembly work is not wasted, and the manufacturing cost of the semiconductor laser device can be reduced.

[Brief explanation of drawings]

FIG. 1 is a perspective view showing a module according to an embodiment of the present invention, FIG. 2 is a flowchart showing the manufacturing process of the semiconductor laser device, and FIG. 3 is a perspective view showing a part of the outline of the semiconductor laser device. FIG. 4 is a schematic diagram showing the quality inspection measurement of the laser diode in the same module. 1... Stem, 2... Camp, 3... Heat sink, 4... Module, 5... Board, 6.7...
- Electrode, 8... Laser diode chip, 9... Wire, 10... Heat sink, 11... Measuring needle, 1
2... Laser light, 13... Light receiving element, 14... Inclined surface, 15... Lead, 16... Insulator, 17.1
8...Wire, 19...Wire, 20...Window, 2
1...Glass plate, 22...V-shaped notch, 23...
- Rectangular notch, 24...positioning groove. Part 1 Figure 2

Claims (1)

[Claims] 1. A step of preparing an insulating substrate having a pair of electrodes on its main surface and satisfying desired heat dissipation conditions, and fixing a light emitting element on one electrode of the substrate via a bottom electrode. At the same time, there is a step of manufacturing a module by electrically connecting the upper surface electrode of the light emitting element and the other electrode with a wire, a step of measuring the characteristics of the light emitting element in the state of the module, and a step of determining a non-defective product by the characteristic measurement. A method for manufacturing an optoelectronic device, comprising the step of assembling the determined module into a package. 2. The method for manufacturing an optoelectronic device according to claim 1, wherein the characteristics of the module are measured while being in close contact with a support having good heat dissipation properties. 3. An insulating substrate that satisfies desired heat dissipation conditions, a pair of electrodes provided on the main surface of this substrate, a light emitting element fixed on one of the electrodes via a lower electrode, and an upper electrode of the light emitting element. and a wire electrically connecting the other electrode. 4. The module according to claim 3, wherein a semiconductor laser element is fixed to one electrode on the main surface of the insulating substrate.