JPS6351931A - Apparatus for substituting piping gas - Google Patents
Apparatus for substituting piping gasInfo
- Publication number
- JPS6351931A JPS6351931A JP19461486A JP19461486A JPS6351931A JP S6351931 A JPS6351931 A JP S6351931A JP 19461486 A JP19461486 A JP 19461486A JP 19461486 A JP19461486 A JP 19461486A JP S6351931 A JPS6351931 A JP S6351931A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- piping system
- exhaust
- pressure
- replacement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007599 discharging Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 97
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 19
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 14
- 230000009931 harmful effect Effects 0.000 abstract description 6
- 238000006467 substitution reaction Methods 0.000 abstract description 3
- 239000004698 Polyethylene Substances 0.000 abstract description 2
- -1 polyethylene Polymers 0.000 abstract description 2
- 229920000573 polyethylene Polymers 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 239000003463 adsorbent Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Landscapes
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（１！ｔ 要〕
半導体装置の製造に使用されるＣＶＤ装置の配管系など
に対し、その内部の化学物質ガスを不活性ガスに１換し
、あるいは不活性ガスを化学物質ガスに置換する処理を
行う装置であって、前記配管系内のガスを排気するポン
プ装置と、排気されたガスを一時的に蓄積保持するタン
ク装置と、置換ガスを前記配管系に供給し充填する装置
と、前記配管系に接続されてその圧力を測定する装置と
、排気動作／充気動作の繰り返し回数を計数する装に（
或いは排気ガスの成分を測定する装置）を含んで成り、
更にこの置換装置は移送装置に積載された構成となって
いる。[Detailed description of the invention] (1!t required) For the piping system of CVD equipment used in the manufacture of semiconductor devices, the chemical gas inside it is replaced with an inert gas, or the inert gas is replaced with an inert gas. A device that performs a process of replacing gas with a chemical substance, including a pump device that exhausts the gas in the piping system, a tank device that temporarily stores and holds the exhausted gas, and supplies the replacement gas to the piping system. A device for filling the gas, a device connected to the piping system to measure its pressure, and a device for counting the number of times the evacuation/filling operation is repeated (
or a device for measuring the components of exhaust gas),
Furthermore, this replacement device is configured to be loaded on a transfer device.
配管系内のガスの置換作業ではポンプ装置による配管系
内のガスの排気と置換装置にθｉｆｆえられたガスの送
入が繰り返される。ガスの排気／送入の切り換えは圧力
の測定により、繰り返しの終了は計数結果（或いは排気
ガス成分の測定値）によって決定される。In the work of replacing gas in the piping system, exhausting the gas in the piping system by a pump device and feeding the gas obtained by θiff into the replacement device are repeated. Switching between gas exhaust and supply is determined by pressure measurement, and the end of repetition is determined by counting results (or measured values of exhaust gas components).
本発明は半導体装置の製造などに利用される気相化学反
応装置の保守作業に関わるものであって、特に気相化学
反応装置の配管系内のガスを置換するための装置に関わ
るものである。The present invention relates to maintenance work of a gas phase chemical reaction device used for manufacturing semiconductor devices, etc., and particularly relates to a device for replacing gas in the piping system of a gas phase chemical reaction device. .
半導体装置の製造に於いて気相化学！Ｉ５５質の反応を
利用して所望の材料層を基板上に堆積させる方法、いわ
ゆるＣＶＤ、が多用されている。ＣＶＤ装置には、当然
のことながら原料ガスを反応装置に輸送し、反応後の廃
ガスを排出する配管系が付属している。この配管系は僅
かな汚染も避けなければならないので、高度に気密な構
造となっており、通常その内部が大気に触れることはな
い。Gas phase chemistry in manufacturing semiconductor devices! A method of depositing a desired material layer on a substrate using an I55 reaction, so-called CVD, is often used. As a matter of course, the CVD apparatus is attached with a piping system for transporting the raw material gas to the reaction apparatus and discharging the waste gas after the reaction. Since this piping system must avoid even the slightest contamination, it has a highly airtight structure, and its interior usually does not come into contact with the atmosphere.
面し乍ら実作業では、原料ガスボンベの交換時や分解洗
浄の際には配管系の一部分或いは全部を大気中に開放し
なければならず、またＣＶＤ装置の休止期間中は原料ガ
スを配管内に滞留させておくのは好ましくないので、こ
れ等の場合、配管内のガスを高純境窒素ガスのような不
活性ガスに置換する処理が必要である。However, in actual work, it is necessary to open part or all of the piping system to the atmosphere when replacing raw material gas cylinders or disassembling and cleaning them, and when the CVD equipment is out of service, raw material gas must be kept inside the piping. It is undesirable for the gas to remain in the pipe, so in these cases, it is necessary to replace the gas in the pipe with an inert gas such as high-purity nitrogen gas.
ＣＶＤ用の化学物質ガス（以下、これを実ガスと称する
）には毒性、自燃性、爆発性など有害な性質を持つもの
が多いので、置換時に配管系から抜き取ったガスは吸着
剤に吸着させる等の処理を行わなければならず、更に、
繰り返しによって置換を完全なものとしなければならな
い、これは作業開始時に配管内の窒素ガスを実ガスに置
換する場合も同様である。Since many chemical gases for CVD (hereinafter referred to as actual gases) have harmful properties such as toxicity, self-flammability, and explosiveness, the gas extracted from the piping system during replacement is adsorbed by an adsorbent. etc., and furthermore,
Replacement must be completed through repetition; this also applies when replacing nitrogen gas in piping with actual gas at the start of work.
（従来の技術）
配管系内のガスの置換は、実ガスボンベ接続部に窒素ガ
スボンベも併せて接続しておき、実ガスのバルブを閉じ
て窒素ガスのパルプを開き、窒素ガスによって流し出す
ことが行われている。また、ＣＶＤは被覆性改善等の目
的で数ｔｏｒｒ程度に減圧して実行することがあり、そ
のためＣＶＤ装置には排気装置を備えたものが多いので
、この排気機能を利用して有害な実ガスを抜き取り窒素
ガスを流し込む方法も採られている。(Prior art) To replace the gas in the piping system, connect a nitrogen gas cylinder to the actual gas cylinder connection, close the actual gas valve, open the nitrogen gas pulp, and flush out the nitrogen gas. It is being done. In addition, CVD is sometimes performed at a reduced pressure of several torr for the purpose of improving coverage, etc., and for this reason, many CVD equipment are equipped with an exhaust system, so this exhaust function can be used to remove harmful actual gases. Another method is to extract the gas and pour in nitrogen gas.
これ等の方法では経験的に処理時間や回数を設定し、完
全な置換が行われるよう配慮することが必要である。In these methods, it is necessary to set the processing time and number of times empirically, and to take care to ensure complete replacement.
半導体装置の製造に用いられるＣＶＤ装置では、原料ガ
スの流量が僅少であり且つ精密に制御しなければならな
いので、配管系は多量のガスを流すのに適した構造には
なっていない、そのため配管内のガスを十分に置換する
のに長時間を要する。In CVD equipment used to manufacture semiconductor devices, the flow rate of raw material gas is small and must be precisely controlled, so the piping system is not structured to be suitable for flowing a large amount of gas. It takes a long time to fully replace the gas inside.
更に、減圧ＣＶＤ用の排気装置は高真空の実現を、
目的とするものではなく、所定の低圧を維持するため
のものであるから排気能力は低く、これも配管内ガスの
７１換に長時間を要する原因となっている。Furthermore, the exhaust equipment for low pressure CVD needs to realize high vacuum.
Since the purpose is not to maintain a predetermined low pressure, the exhaust capacity is low, and this is also a cause of the long time it takes to exchange the gas in the pipe.
また、通常のＣＶＤ装置では原料供給部と排気処理部が
近接して設けられる場合は稀なので、これもガス置換処
理の作業性を悪くしている。Furthermore, in a normal CVD apparatus, the raw material supply section and the exhaust treatment section are rarely provided in close proximity, which also impairs the workability of the gas replacement process.
本発明の目的は配管系内のガスのＶ操作業を速やかに行
い得る配管ガス置換装置を提供することであり、更に、
配管系の一箇所に接続することによってガスの抜き取り
と充満を行うことが出来る可搬型のガス置換装置を提供
することである。An object of the present invention is to provide a piping gas replacement device that can quickly perform V-operation of gas in a piping system, and further includes:
It is an object of the present invention to provide a portable gas replacement device that can extract and fill gas by connecting to one point in a piping system.
本発明の装置はガス置換処理の対象となる配管系に接続
する部分と、配管系を排気するためのポンプ装置と、置
換ガスを送り込むための置換ガス供給部と、配管系内の
圧力を測定する圧力計と、配管系内のガスの成分を推定
或いは測定するために具えられた排気／充気の繰り返し
回数カウンタあるいはガスセンサと、ポンプによって排
出したガスを蓄積するタンクを具え、更に本発明の４ｊ
Ｌｍは台車上に載置するなどの構成によって移動可能に
なっている。The device of the present invention measures the part that connects to the piping system that is the target of gas replacement processing, the pump device for exhausting the piping system, the replacement gas supply unit that feeds the replacement gas, and the pressure inside the piping system. The present invention further comprises a pressure gauge for estimating or measuring gas components in the piping system, an evacuation/filling repetition counter or gas sensor provided for estimating or measuring gas components in the piping system, and a tank for accumulating the gas exhausted by the pump. 4j
Lm is movable by being placed on a trolley or the like.
〔作 用〕
本発明の装置は専用の排気ポンプを具えており、また置
換ガスは自装置に用、０：されたボンへがら送り込むの
で、配管系のガスの入れ換えが速やかに行われる。υト
気或いは充気は圧力ｉｉ１で監？、ｌＪ Ｌ、、 ２；
がら行うので、所定の圧力に達すれば直ちに次の操作に
入ることが可能であり、この点も作業時間の短ｊｉＭに
効果がある。[Function] The device of the present invention is equipped with a dedicated exhaust pump, and since the replacement gas is used for the device itself and is sent in bulk into the zeroed cylinder, the gas in the piping system can be quickly replaced. υTo qi or filling is controlled by pressure ii1? ,lJ L,, 2;
Since the process is carried out while the pressure is being applied, it is possible to immediately start the next operation once a predetermined pressure is reached, which is also effective in shortening the working time.
更に、排気／充気の繰り返し回数をカウントし、所定の
回数に達したら作業を終了する。これはガスセンサを使
用して実ガス成分が所定の値以下になったところで終了
としてもよい、全体が移送可能になついるので、これを
１セ、ト用意しておけば複数のＣＶＤ装置の保守に利用
することができる。Furthermore, the number of repetitions of evacuation/filling is counted, and when a predetermined number of times is reached, the work is completed. This can be done by using a gas sensor and ending when the actual gas component falls below a predetermined value.The whole thing can now be transported, so if you have one set of these, you can maintain multiple CVD equipment. It can be used for.
また、操作が体系的なので、処理手順をシーケンサに書
き込んで自動装置とすることも可能である。Furthermore, since the operation is systematic, it is possible to write processing procedures into the sequencer to make it an automatic device.
第１図は実施例の装置の構成を模式的に示す図である。 FIG. 1 is a diagram schematically showing the configuration of an apparatus according to an embodiment.
１は処理対象配管系に接続する接続［Ｉ、２は排気ポン
プ、３は排ガスタンク、４はスイッチ回路付圧力計、５
．６は吸着筒、７は外囲容器、８は置換ガスボンへであ
り、ＶＤ１〜■Ｄ１１は空気作動パルプ、Ｆ？Ｖはレギ
ュレータ、■はブロー用パルプである。装置全体は台車
９のような移送装置に積載され、任意の場所に移動して
使用し得る構成となっている。1 is the connection to the piping system to be treated [I, 2 is the exhaust pump, 3 is the exhaust gas tank, 4 is the pressure gauge with switch circuit, 5
．． 6 is an adsorption cylinder, 7 is an outer container, 8 is a replacement gas cylinder, VD1 to ■D11 are air-operated pulps, and F? V is a regulator, ■ is a blowing pulp. The entire device is loaded onto a transport device such as a trolley 9, and is configured to be moved and used at any location.
排気ポンプ２は配管系の汚染を避けるためオ、イルフリ
ーのものが使用される。例えばダイヤフラムポンプ、タ
ーボポンプ等であり、メカニカルブースターが使用され
ることもある。従来メカニカルブースターは圧力差が大
きいと効率が低下するので単独では使用し得なかったが
、近年改良された結果、冷却装置を併用して大気圧下で
使用することが可能になった。The exhaust pump 2 is oil-free to avoid contamination of the piping system. For example, diaphragm pumps, turbo pumps, etc., and mechanical boosters may also be used. In the past, mechanical boosters could not be used alone because their efficiency decreased when the pressure difference was large, but recent improvements have made it possible to use them under atmospheric pressure when combined with a cooling device.
このポンプは化学的に活性なガスを扱うものであるから
、ガスに接触する部分の材質についての配慮が必要であ
り、ステンレス鋼や弗素樹脂が用いられる。Since this pump handles chemically active gas, consideration must be given to the material of the parts that come into contact with the gas, and stainless steel or fluororesin are used.
最初に第１図を参照しなからＣＶＤ装置の配管系の実ガ
スを窒素ガスに置換する操作を説明する。First, the operation of replacing the actual gas in the piping system of the CVD apparatus with nitrogen gas will be explained with reference to FIG.
ガス置換操作のフローチャートが第２ｒＡに示されてお
り、併せて参照される。A flowchart of the gas replacement operation is shown in 2nd rA and is also referred to.
接続口ｌをＣＶＤ装置の配管に接続する。排出するガス
のＩＪ類に合わせて吸着筒５．６を選択し、その出入口
のパルプを開く、第１図には示されないカウンタを０に
リセットし、ＶＤＩおよびＶＤｌｌを開き、圧力計４で
配管系の圧力を監視しながら排気ポンプ２を作動させる
。Connect the connection port 1 to the piping of the CVD equipment. Select the adsorption cylinder 5.6 according to the IJ type of gas to be discharged, open the pulp at its inlet/outlet, reset the counter (not shown in Figure 1) to 0, open the VDI and VDll, and connect the pipe with the pressure gauge 4. The exhaust pump 2 is operated while monitoring the system pressure.
ポンプの排ガスはＵＪＬ着筒で有害成分が吸着され、残
りのガスは排ガスタンク３に貯蔵される。この排ガスタ
ンクはポリエチレンのシートで気密に且つ変形自由に作
られている。排ガスタンクを収容している外囲容器７に
は予め窒素ガスが充填しであるが、排ガスタンクが膨満
するのに応じてＶＤｌｌから押し出される。Harmful components of the exhaust gas from the pump are adsorbed in the UJL cylinder, and the remaining gas is stored in the exhaust gas tank 3. This exhaust gas tank is made of a polyethylene sheet to be airtight and deformable. The envelope 7 housing the exhaust gas tank is filled with nitrogen gas in advance, but as the exhaust gas tank expands, it is forced out of the VDll.
圧力計４は連成計であってその指示が、例えば０、８６
ｋｇ／ｃ＋Ｊに達すると付属のスイッチ回路が作動し
てＶＤＩ、ＶＤＩＩを閉じ、排気ポンプを停止する。The pressure gauge 4 is a compound gauge, and its indication is, for example, 0, 86.
When kg/c+J is reached, the attached switch circuit is activated to close VDI and VDII and stop the exhaust pump.
続いてＶＤ２を開き、配管系に窒素ガスを充填してゆく
、この時も圧力を監視し、２ｋｇ／ｃｄに達したらスイ
ッチ回路が作動してＶＤ２閉じ、カウンタを１だけ進め
て上述の排気動作に戻る。Next, VD2 is opened and the piping system is filled with nitrogen gas. At this time, the pressure is also monitored, and when it reaches 2 kg/cd, the switch circuit is activated and VD2 is closed, the counter is advanced by 1, and the exhaust operation described above is performed. Return to
このように排気／充気を繰り返し、カウンタの指示が所
定の数、例えば１０、に達したら窒素ガスへの置換は完
了したものとして各パルプを閉じ、配管系との接続を切
り離す、配管系側の接続口にもパルプが設けられている
ことは勿論である。Repeat the evacuation/filling process in this way, and when the counter reaches a predetermined number, for example 10, the replacement with nitrogen gas is considered complete, and each pulp is closed and disconnected from the piping system. Of course, pulp is also provided at the connection port.
上記動作例では、窒素ガスへの置換が完了したことを排
気／充気の繰り返し回数から推定しζいるが、排気ポン
プの人口に実ガス用のセンナを設け、実ガスが検出され
なくなるまで排気／充気を繰り返すようにしてもよい。In the above operation example, the completion of replacement with nitrogen gas is estimated from the number of repetitions of evacuation/filling, but a senna for actual gas is installed in the exhaust pump, and the exhaust is pumped until the actual gas is no longer detected. / You may repeat the filling process.
○ 有効 × 無’ＪＪ
咬着筒に収められる吸着剤の種類と、それに吸着される
実ガスの種類は前頁の表に例示されている０表中の○を
付けた組み合わせは吸着剤が効果を示すもの、×を付け
た組み合わせは効果を示さないものである。吸着剤のＫ
Ｓ、Ｒは夫々商品名ＫＳ剤、リカゾールと呼ばれるもの
で、日本酸素の製品である。○ Effective × None'JJ The type of adsorbent contained in the bite cylinder and the type of actual gas adsorbed by it are shown in the table on the previous page.0 Combinations marked with a circle in the table indicate that the adsorbent is effective. , and combinations marked with an x indicate no effect. K of adsorbent
S and R are called KS agent and Ricasol, respectively, and are products of Nippon Sanso.
吸着筒を通過することによって実ガスの有害成分は殆ど
吸着剤に咬着されるが、吸着されなかった分もキャリヤ
ガスと共に排ガスタンクに蓄積され、通常の空間に放出
されることがないので、装置が運び込める場所であれば
何処でも作業することが出来る。基禎された排ガスの処
理については後述する。By passing through the adsorption tube, most of the harmful components of the actual gas are absorbed by the adsorbent, but the unadsorbed components are also accumulated in the exhaust gas tank along with the carrier gas and are not released into the normal space. You can work anywhere you can carry the equipment. The treatment of the purified exhaust gas will be described later.
なお上記吸着剤は、ＣＣ１４，ＣＦ ａ−Ｎ Ｆ ｓに
対しては吸着効果を示さないので、バ・イパスラインを
経由させ゛ζ排ガスタンクにＭ積し、排ガス処理場所に
移して処理することになる。Note that the above adsorbent does not show an adsorption effect on CC14, CF a-N F s, so it is decided to pass it through a bypass line, pile it up in the exhaust gas tank, and transfer it to the exhaust gas treatment site for treatment. Become.
次にＣＶＤ装置を起動する場合のように、窒素ガスを実
ガスに置換する処理を説明する。置換装置側に用意する
ガスボンベは窒素に代えて実ガスのボンベである。この
部分は複数の？［のボンベを用意し、バルブの開閉で選
択するものであってもよい。Next, a process of replacing nitrogen gas with actual gas as in the case of starting up a CVD apparatus will be described. The gas cylinder prepared on the side of the replacement device is a cylinder of actual gas instead of nitrogen. Is this part multiple? It is also possible to prepare a cylinder and select by opening or closing a valve.
この操作も大綱は窒素への置換と同じであり、第２図の
フローに従って実行される。操作は排気ポンプによる配
管系からのガスの抜き取りとボンベから配管系にガスを
送り込む作業の繰り返しであるが、実ガスの充填圧力は
０．２ ｋｇ ／ ｃｄに変更されている。排気動作を
終止させる圧力は窒素の場合と同じ−０，８６ｋｇ／ｃ
ｄである。排気／充気の繰り返し回数も同じ＜１０回程
度でよい。This operation is also basically the same as the nitrogen substitution, and is executed according to the flow shown in Figure 2. The operation consists of repeatedly removing gas from the piping system using an exhaust pump and feeding gas from a cylinder into the piping system, but the actual gas filling pressure has been changed to 0.2 kg/cd. The pressure at which the exhaust operation ends is the same as for nitrogen - 0.86 kg/c
It is d. The number of repetitions of evacuation/filling may also be the same <10 times.
上記の置換作業では有害な実ガスを含むガスが排ガスタ
ンクに蓄積されるので、作業終了後、装置を排ガス処理
場所に移しＶＤ３及びＶＤＩＯを開く、排ガスタンク３
は既述したように容易に変形するので、外囲容器７の圧
力が高まると圧縮されて中の排ガスを放出する。During the above replacement work, gas containing harmful actual gas accumulates in the exhaust gas tank, so after completing the work, move the device to the exhaust gas treatment area, open VD3 and VDIO, and open the exhaust gas tank 3.
As described above, since it is easily deformed, when the pressure of the surrounding container 7 increases, it is compressed and releases the exhaust gas inside.
第１図の置換ガスボンベに接続されるレギュレータＲＶ
はガスの種類に合わせた達成計付のもの、ブローバルブ
■はボンベ交換時に入り込んだ空気を追い出すためのも
のである。Regulator RV connected to the replacement gas cylinder in Figure 1
The type is equipped with an achievement meter according to the type of gas, and the blow valve ■ is used to expel air that has entered when replacing the cylinder.
以上の説明から明らかなように、本発明の装置の動作は
ロジックに従って進行するものであり、これをシーケン
サのようなロジックコントローラに書き込んでおき、そ
れに従って自動釣に作動させることが可能である。As is clear from the above description, the operation of the device of the present invention proceeds according to logic, and this can be written into a logic controller such as a sequencer and operated automatically according to the logic.
本発明の装置は、排気ポンプと置換ガスのボンベを内蔵
しているので、処理対象の配管系の排気／充気を速やか
に行うことができ、更に圧力計、カウンタも具えている
ので自動処理が可能である。The device of the present invention has a built-in exhaust pump and replacement gas cylinder, so it can quickly exhaust/inflate the piping system to be treated, and it is also equipped with a pressure gauge and counter, so it can perform automatic processing. is possible.
また、配管系への接続は一箇所だけであり、排ガスはタ
ンクに蓄積されるので、全体を可搬型にまとめることが
出来、従来の処理方式に較べて作業性が格段に向−ヒす
る。Furthermore, since there is only one connection to the piping system and the exhaust gas is stored in a tank, the entire system can be made portable, and work efficiency is greatly improved compared to conventional treatment methods.
第１図は実施例の装置の構成を模１（的に示す図、第２
図は配管系のガス置換匿作のフローチャートである。
図において、
１は接続口、
２は排気ポンプ、
３は排ガスタンク、
４はＳ付圧力計、
５．６は吸着筒、
７は外囲容器、
８は置換ガスボンベ、
ＶＤ１〜■Ｄ１１は電動バルブ、
ＲＶはレギュレータ、
■はブロー用バルブ
である。
餐・′・・・′Figure 1 shows the configuration of the device in the example.
The figure is a flowchart of gas replacement operation in the piping system. In the figure, 1 is the connection port, 2 is the exhaust pump, 3 is the exhaust gas tank, 4 is the pressure gauge with S, 5.6 is the adsorption cylinder, 7 is the surrounding container, 8 is the displacement gas cylinder, and VD1 to D11 are the electric valves. , RV is a regulator, and ■ is a blow valve. Dinner・'...'
Claims (1)
段（１）と、 該接続手段を経由して前記作業対象ガス配管系内のガス
を排出する手段（２）と、 前記接続手段を経由して前記作業対象ガス配管系にガス
を導入する手段（８）と、 前記作業対象ガス配管系内のガスの圧力を測定する手段
（４）と、 前記作業対象ガス配管系から排出したガスの成分を推定
或いは測定する手段と、 前記作業対象ガス配管系から排出したガスを蓄積する手
段（３）と、 前記の全手段を含む装置を積載して移動させる手段（９
） を具えて成ることを特徴とする配管ガス置換装置。[Scope of Claims] Means (1) for connecting one's own piping system to the gas piping system to be worked on; and (2) means for discharging the gas in the gas piping system to be worked on via the connecting means. and means (8) for introducing gas into the work target gas piping system via the connection means; means (4) for measuring the pressure of the gas in the work target gas piping system; and the work target gas. means for estimating or measuring the components of the gas discharged from the piping system; means (3) for accumulating the gas discharged from the gas piping system to be worked; and means for loading and moving the apparatus including all of the above means ( 9
) A piping gas replacement device characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19461486A JPS6351931A (en) | 1986-08-20 | 1986-08-20 | Apparatus for substituting piping gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19461486A JPS6351931A (en) | 1986-08-20 | 1986-08-20 | Apparatus for substituting piping gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6351931A true JPS6351931A (en) | 1988-03-05 |
| JPH0419899B2 JPH0419899B2 (en) | 1992-03-31 |
Family
ID=16327466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19461486A Granted JPS6351931A (en) | 1986-08-20 | 1986-08-20 | Apparatus for substituting piping gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6351931A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03104868A (en) * | 1989-09-19 | 1991-05-01 | Fujitsu Ltd | Gas supplying device |
| JP2009027182A (en) * | 2006-10-19 | 2009-02-05 | Tokyo Electron Ltd | Treatment device and gas supply unit |
| WO2019244533A1 (en) * | 2018-06-20 | 2019-12-26 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment device and atmosphere substitution method for heat treatment device |
-
1986
- 1986-08-20 JP JP19461486A patent/JPS6351931A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03104868A (en) * | 1989-09-19 | 1991-05-01 | Fujitsu Ltd | Gas supplying device |
| JP2009027182A (en) * | 2006-10-19 | 2009-02-05 | Tokyo Electron Ltd | Treatment device and gas supply unit |
| WO2019244533A1 (en) * | 2018-06-20 | 2019-12-26 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment device and atmosphere substitution method for heat treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0419899B2 (en) | 1992-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |