JPS6351468U - - Google Patents
Info
- Publication number
- JPS6351468U JPS6351468U JP14560786U JP14560786U JPS6351468U JP S6351468 U JPS6351468 U JP S6351468U JP 14560786 U JP14560786 U JP 14560786U JP 14560786 U JP14560786 U JP 14560786U JP S6351468 U JPS6351468 U JP S6351468U
- Authority
- JP
- Japan
- Prior art keywords
- region
- emitter region
- conductivity type
- oxide film
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 2
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Description
第1図は本考案に係る半導体装置の一実施例を
示す断面図、第2図はパンチスルー型ダイオード
の従来例を示す断面図である。
2……半導体基板(コレクタ領域)、3……ベ
ース領域、4’……エミツタ領域、7’……酸化
膜、10……チヤネルストツパ領域。
FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a sectional view showing a conventional example of a punch-through diode. 2... Semiconductor substrate (collector region), 3... Base region, 4'... Emitter region, 7'... Oxide film, 10... Channel stopper region.
Claims (1)
他導電型不純物を選択的に拡散してベース領域及
びエミツタ領域を順次形成したものにおいて、 上記エミツタ領域と隣接した位置に、エミツタ
領域と同一導電型の高濃度不純物を選択的に拡散
してエミツタ領域と連なるチヤネルストツパ領域
を形成する共に、該チヤネルストツパ領域上に形
成された酸化膜の膜厚をエミツタ領域上に形成さ
れた酸化膜の膜厚よりも大きくしたことを特徴と
する半導体装置。[Claims for Utility Model Registration] On the one-conductivity type semiconductor substrate that becomes the collector region,
In a structure in which a base region and an emitter region are sequentially formed by selectively diffusing impurities of other conductivity type, a high concentration impurity of the same conductivity type as the emitter region is selectively diffused in a position adjacent to the emitter region to form an emitter region. 1. A semiconductor device comprising: a channel stopper region continuous with the emitter region; and an oxide film formed on the channel stopper region having a thickness greater than that of an oxide film formed on the emitter region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14560786U JPS6351468U (en) | 1986-09-22 | 1986-09-22 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14560786U JPS6351468U (en) | 1986-09-22 | 1986-09-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6351468U true JPS6351468U (en) | 1988-04-07 |
Family
ID=31057304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14560786U Pending JPS6351468U (en) | 1986-09-22 | 1986-09-22 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6351468U (en) |
-
1986
- 1986-09-22 JP JP14560786U patent/JPS6351468U/ja active Pending
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