JPS6350848Y2 - - Google Patents
Info
- Publication number
- JPS6350848Y2 JPS6350848Y2 JP1979121499U JP12149979U JPS6350848Y2 JP S6350848 Y2 JPS6350848 Y2 JP S6350848Y2 JP 1979121499 U JP1979121499 U JP 1979121499U JP 12149979 U JP12149979 U JP 12149979U JP S6350848 Y2 JPS6350848 Y2 JP S6350848Y2
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- supply pipe
- mass flow
- gas
- detection means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 description 27
- 238000005530 etching Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002354 daily effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 101150082661 MFM1 gene Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979121499U JPS6350848Y2 (fr) | 1979-09-03 | 1979-09-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979121499U JPS6350848Y2 (fr) | 1979-09-03 | 1979-09-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5638449U JPS5638449U (fr) | 1981-04-11 |
| JPS6350848Y2 true JPS6350848Y2 (fr) | 1988-12-27 |
Family
ID=29353633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979121499U Expired JPS6350848Y2 (fr) | 1979-09-03 | 1979-09-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350848Y2 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277666A (ja) * | 2007-05-02 | 2008-11-13 | Tokyo Electron Ltd | バルブ開閉動作確認方法、ガス処理装置および記憶媒体 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176976A (ja) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | Kisohannosochi |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5824759Y2 (ja) * | 1978-01-31 | 1983-05-27 | 株式会社東芝 | 流量計の校正装置 |
-
1979
- 1979-09-03 JP JP1979121499U patent/JPS6350848Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5176976A (ja) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | Kisohannosochi |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5638449U (fr) | 1981-04-11 |
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