JPS6349910B2 - - Google Patents

Info

Publication number
JPS6349910B2
JPS6349910B2 JP57007415A JP741582A JPS6349910B2 JP S6349910 B2 JPS6349910 B2 JP S6349910B2 JP 57007415 A JP57007415 A JP 57007415A JP 741582 A JP741582 A JP 741582A JP S6349910 B2 JPS6349910 B2 JP S6349910B2
Authority
JP
Japan
Prior art keywords
manufacturing
amorphous silicon
line sensor
aluminum
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57007415A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125864A (ja
Inventor
Tsutomu Nomoto
Akira Uchama
Katsuaki Sakamoto
Toshuki Iwabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57007415A priority Critical patent/JPS58125864A/ja
Publication of JPS58125864A publication Critical patent/JPS58125864A/ja
Publication of JPS6349910B2 publication Critical patent/JPS6349910B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP57007415A 1982-01-22 1982-01-22 ラインセンサの製造方法 Granted JPS58125864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57007415A JPS58125864A (ja) 1982-01-22 1982-01-22 ラインセンサの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57007415A JPS58125864A (ja) 1982-01-22 1982-01-22 ラインセンサの製造方法

Publications (2)

Publication Number Publication Date
JPS58125864A JPS58125864A (ja) 1983-07-27
JPS6349910B2 true JPS6349910B2 (enrdf_load_stackoverflow) 1988-10-06

Family

ID=11665228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57007415A Granted JPS58125864A (ja) 1982-01-22 1982-01-22 ラインセンサの製造方法

Country Status (1)

Country Link
JP (1) JPS58125864A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115259A (ja) * 1983-11-26 1985-06-21 Nippon Telegr & Teleph Corp <Ntt> 光電変換装置およびその製造方法
JPS622672A (ja) * 1985-06-28 1987-01-08 Sanyo Electric Co Ltd 光センサの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411674A (en) * 1977-06-28 1979-01-27 Nippon Denso Co Ltd Semiconductor device of mesa type
JPS5613777A (en) * 1979-07-16 1981-02-10 Shunpei Yamazaki Photoelectric converter
JPS5817686A (ja) * 1981-07-24 1983-02-01 Hitachi Ltd アモルフアスシリコンダイオ−ドアレイ

Also Published As

Publication number Publication date
JPS58125864A (ja) 1983-07-27

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