JPS6348951B2 - - Google Patents
Info
- Publication number
- JPS6348951B2 JPS6348951B2 JP11559486A JP11559486A JPS6348951B2 JP S6348951 B2 JPS6348951 B2 JP S6348951B2 JP 11559486 A JP11559486 A JP 11559486A JP 11559486 A JP11559486 A JP 11559486A JP S6348951 B2 JPS6348951 B2 JP S6348951B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- insulating layer
- dry etching
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 23
- 238000001312 dry etching Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 42
- 235000012431 wafers Nutrition 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000026731 phosphorylation Effects 0.000 description 1
- 238000006366 phosphorylation reaction Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11559486A JPS62274082A (ja) | 1986-05-20 | 1986-05-20 | ドライエツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11559486A JPS62274082A (ja) | 1986-05-20 | 1986-05-20 | ドライエツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62274082A JPS62274082A (ja) | 1987-11-28 |
| JPS6348951B2 true JPS6348951B2 (ko) | 1988-10-03 |
Family
ID=14666473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11559486A Granted JPS62274082A (ja) | 1986-05-20 | 1986-05-20 | ドライエツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62274082A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002076A1 (fr) * | 1993-07-05 | 1995-01-19 | Kabushiki Kaisha Toshiba | Procede de formation d'une couche mince |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2768685B2 (ja) * | 1988-03-28 | 1998-06-25 | 株式会社東芝 | 半導体装置の製造方法及びその装置 |
| JP2720763B2 (ja) * | 1993-09-17 | 1998-03-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| WO2009013817A1 (ja) | 2007-07-25 | 2009-01-29 | Fujitsu Limited | 無線タグ |
-
1986
- 1986-05-20 JP JP11559486A patent/JPS62274082A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995002076A1 (fr) * | 1993-07-05 | 1995-01-19 | Kabushiki Kaisha Toshiba | Procede de formation d'une couche mince |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62274082A (ja) | 1987-11-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |