JPS6348852A - Large scale integrated circuit device - Google Patents
Large scale integrated circuit deviceInfo
- Publication number
- JPS6348852A JPS6348852A JP19351286A JP19351286A JPS6348852A JP S6348852 A JPS6348852 A JP S6348852A JP 19351286 A JP19351286 A JP 19351286A JP 19351286 A JP19351286 A JP 19351286A JP S6348852 A JPS6348852 A JP S6348852A
- Authority
- JP
- Japan
- Prior art keywords
- package
- lsi
- integrated circuit
- lead wires
- terminal groups
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010354 integration Effects 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の目的]
(産業上の利用分野)
本発qu、スー・(−インテグレーション(5UPER
INTEGRATION )技術(以下SI技術と略す
)により高密度に集積された高密度集積回路(以下LS
Iと略す)を1つのilツヶーソ内に2層構造に内蔵し
てワンパッケージシステム(SYSTEMON PAC
KAGE)を得るのに適用される大規模集積回路(以下
VLS Iと略す)装置に関する。[Detailed description of the invention] [Object of the invention] (Industrial application field)
High-density integrated circuits (hereinafter referred to as LS
A one-package system (SYSTEMON PAC
The present invention relates to a large-scale integrated circuit (hereinafter abbreviated as VLSI) device applied to obtain a large-scale integrated circuit (hereinafter abbreviated as VLSI).
(従来の技術)
最近、SI技術によりLSIやVLSIが開発され、フ
ンチップシステム(SYSTEM ON CHIP )
が可能となった。しかしながら、このように高密度集積
化が進むにつれて、フラットノ!ツケーノ(F’LAT
PACKAGE) (以下rpと略す)のビン数が増加
し、その丸めFPを回路基板等に実装する場合に種々の
問題を生じている。現在のところ、FPのビン数は14
4ビンまで実用化されているが、それ以上に増加すると
問題が多くなり、その実用化は困難とされている。また
ワンチップ上の高密度集積化も、テップサイズやシュリ
ンクによる特性の変化等により限界にきているとされて
いる。(Conventional technology) Recently, LSI and VLSI have been developed using SI technology, and SYSTEM ON CHIP
became possible. However, as high-density integration progresses, flat no! Tukeno (F'LAT)
PACKAGE) (hereinafter abbreviated as rp) has increased in number, and various problems have arisen when mounting the rounded FP on a circuit board or the like. Currently, the number of FP bins is 14.
Although up to 4 bottles have been put into practical use, increasing the number beyond that increases problems, making it difficult to put them into practical use. In addition, high-density integration on a single chip is said to be reaching its limits due to changes in characteristics due to tip size and shrinkage.
(発明が解決しようとする問題点)
前記の如く、従来は、実装上の問題でFP等のビン数に
限度がち9、またワンチップ上の高密度集積化にも、チ
ップサイズやシュリンクによる特性の変化等により限界
があるので、ワンチップシステムが可能となっても、ワ
ン/4’ツケーソンステムを得ることは困難であるとい
う問題点があった。(Problems to be Solved by the Invention) As mentioned above, in the past, the number of bins for FPs, etc. tended to be limited due to packaging issues9, and high-density integration on a single chip was limited by characteristics due to chip size and shrinkage. There is a problem that even if a one-chip system becomes possible, it is difficult to obtain a one/4' caisson stem.
本発明は上記従来の問題点を解消し、F’P等のビン数
を増加し、ワンパッケージシステムを得ることができる
VLSI装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a VLSI device that solves the above conventional problems, increases the number of bins such as F'P, and can provide a one-package system.
[発明の構成]
(問題点を解決するための手段)
本発明は、現在のF’Pを例えば多ピン対応型に改良し
、さらに、1つのFPKSr技術によジ高密度に集積さ
れたLSIを2層構造に内蔵することによジ、ワン・セ
ラケージシステムを得ることができるという矧見に基い
てなされたものである。[Structure of the Invention] (Means for Solving the Problems) The present invention improves the current F'P, for example, to support a large number of pins, and further improves the LSI that is densely integrated using one FPKSr technology. This was done based on the idea that a one-cell cage system could be obtained by incorporating the two-layer structure.
本発明によるVLS I装置は、1つの・ソツケーノ内
に2膚構造に内蔵された第1および第2のLSIと、前
記第1のLSIの各リード線とそれぞれ接続し、前記・
ぞノケーソの側面からそれぞれ外部に導出された第1の
端子群と、前記第2のLSIの各リード線とそれぞれ接
続し、前記・ぐツケーノの下面からそれぞれ外部に導出
式れた第2の端子群とを具備してなることt−特徴とす
る。The VLSI device according to the present invention has first and second LSIs built into a two-layer structure within one socket, and each lead wire of the first LSI is connected to the lead wires of the first LSI.
A first group of terminals each led out from the side surface of the housing, and a second terminal connected to each lead wire of the second LSI, and a second terminal led out from the bottom surface of the housing. The t-characteristic is that it comprises a group.
(作用)
本発明によれば、1つの/!ツケーノ内に2つのLSI
を2層構造に内蔵し、各び工の各リード線と接続される
各端子群の中の一方の端子群を・ぞソケーノの側面から
外部に導出し、他方の端子群をパッケージの下面から外
部に導出することにより、FPを多ピン対応型F’Pに
改良し、これによりフンパッケージシステムを得ること
がでさ、また実装プロセスを少なくし、さらに実装スペ
ースを小さくすることができる。(Function) According to the present invention, one /! Two LSIs in Tsukeno
is built into a two-layer structure, one group of terminals connected to each lead wire of each wire is led out from the side of the package, and the other group is led out from the bottom of the package. By leading to the outside, the FP can be improved to a multi-pin compatible F'P, thereby making it possible to obtain a simple package system, reducing the number of mounting processes, and further reducing the mounting space.
(実施例)
第1図は本発明の一実施例の構成を示す側面図でちり、
FPのビン数が200ピンの場合の一例を示す。(Embodiment) FIG. 1 is a side view showing the configuration of an embodiment of the present invention.
An example is shown in which the number of FP bins is 200 pins.
第2図は第1図に示す実施例の下面図を示す。FIG. 2 shows a bottom view of the embodiment shown in FIG.
第3図は第1図に示す実施例の部分断面を示す斜視図を
示す。FIG. 3 shows a perspective view, partially in section, of the embodiment shown in FIG.
瀧1図〜第3図において、1は絶縁性を有する合成樹脂
製のノゼ2ケーソ、2.3はノ9クケーソ1内に2層構
造に内蔵された第1および第2のLSI、4は第1のL
SIのリード線、5は各リード線4とそれぞれ接続し、
・ゼンケーソ1の側面から外部に導出された第1の端子
群(ビン群)、6は第2のLSIのリード線、7は各リ
ード線6とそれぞれ接続し、パッケージ1の下面から外
部に導出された第2の端子群(ビン群)を示す。In Figures 1 to 3, 1 is a synthetic resin casing with insulation properties, 2.3 is a first and second LSI built into the casing 1 in a two-layer structure, and 4 is a casing made of a synthetic resin with insulation properties. 1st L
The SI lead wires 5 are connected to each lead wire 4,
・The first terminal group (bin group) led out from the side surface of the Zenkaiso 1, 6 is the lead wire of the second LSI, 7 is connected to each lead wire 6, and led out from the bottom surface of the package 1. The second terminal group (bin group) shown in FIG.
第1図〜第3図に示された本発明の一実施例は、200
ピンのF’Pの例であり、そのビン配置は、第1図およ
び第2図に示すように、例えば従来のFPのビン配置と
同様に、F’Pの側面から外部に導出された100ビン
からなる第1の端子群5と、これとは別に、新たにFP
の下面から外部に導出された100ピンからなる第2の
端子群7との合計200ピンからなっている。One embodiment of the invention shown in FIGS.
This is an example of an F'P of a pin, and its bin arrangement is similar to the bin arrangement of a conventional FP, for example, as shown in FIG. 1 and FIG. The first terminal group 5 consisting of a bottle and, apart from this, a new FP
It consists of a total of 200 pins including a second terminal group 7 consisting of 100 pins led out from the bottom surface of the terminal.
また第3図に示すように、FP内には、第1および第2
のLSI2および3が2層に内蔵され、1層(上段)目
の第1のLSI、?には、従来のF’Pのリード線と同
様にリード線4を接続し、これらにそれぞれ第1の端子
群5が接続されている。また2層(下段)目の第2のL
S1.?には、新たにIJ−ド線6を設け、これらにそ
れぞれ第2の端子群7が接続されている。この場合、F
Pの下面から垂直に導出された第2の端子群7は、第2
図および第3図に示すように、2列づつに配設し、かつ
奇数番のビンを内側に、偶数番のぎンを外側になるよう
に配設されている。なお第2の端子群7はそれぞれ硬質
の端子で構成されている。Additionally, as shown in Figure 3, there are first and second
LSIs 2 and 3 are built in two layers, and the first LSI in the first layer (upper layer) is ? A lead wire 4 is connected to the lead wire 4 in the same manner as the lead wire of a conventional F'P, and a first terminal group 5 is connected to each of these lead wires. Also, the second L of the second layer (lower row)
S1. ? , new IJ-do wires 6 are provided, and a second terminal group 7 is connected to each of these. In this case, F
A second terminal group 7 led out perpendicularly from the lower surface of P
As shown in the figure and FIG. 3, they are arranged in two rows, with odd numbered bottles on the inside and even numbered bottles on the outside. Note that each of the second terminal groups 7 is composed of hard terminals.
上記のように、本発明によれば、FPを容易に多ピン対
応型FPに改良することができる。As described above, according to the present invention, an FP can be easily improved to a multi-pin compatible FP.
上記の本発明の一実施例では、本発明を200ピンのF
’PK適用する場合につ(・)で説明したが、200ビ
ン以外のビン数のFPにも同様に適用できるとともに1
例えばDIP型のIC(集積回路)にも適用することが
できる。In one embodiment of the invention described above, the invention is implemented in a 200-pin F
'When applying PK, it was explained in (・), but it can be similarly applied to FP with a number of bins other than 200 bins, and
For example, it can also be applied to a DIP type IC (integrated circuit).
[発明の効果] 本発明によれば、次の如き優れた効果が奏せられる。[Effect of the invention] According to the present invention, the following excellent effects can be achieved.
(1)従来のF’Pと同等の面積で、集積率や端子数を
2倍以上にすることができる。(1) The integration rate and number of terminals can be more than doubled with the same area as the conventional F'P.
(2)ワン/母ツケーソシステムが可能となる。(2) One/mother system becomes possible.
(3)プリント基板等に自動実装することができる。(3) It can be automatically mounted on a printed circuit board, etc.
(4)基板上の実装スペースを大幅に減少させることが
できる。(4) The mounting space on the board can be significantly reduced.
(5)基板に対する実装グロセスを短縮することができ
る。(5) The mounting process for the board can be shortened.
第1図〜第3図は、それぞれ本発明の一実施例の杓成を
示す図で、第1図は側面図、第2図は底面図、第3図は
部分断面斜視図である。
1・・・パッケージ、2,3・・・IAI、4.6・・
・リード線、5,7・・・端子群。1 to 3 are views showing the construction of an embodiment of the present invention, respectively, with FIG. 1 being a side view, FIG. 2 being a bottom view, and FIG. 3 being a partially sectional perspective view. 1...Package, 2,3...IAI, 4.6...
・Lead wires, 5, 7...Terminal group.
Claims (1)
第2の高密度集積回路と、前記第1の高密度集積回路の
各リード線とそれぞれ接続し、前記パッケージの側面か
らそれぞれ外部に導出された第1の端子群と、前記第2
の高密度集積回路の各リード線とそれぞれ接続し、前記
パッケージの下面からそれぞれ外部に導出された第2の
端子群とを具備してなることを特徴とする大規模集積回
路装置。A first and a second high-density integrated circuit built in a two-layer structure in one package are connected to respective lead wires of the first high-density integrated circuit, and each lead out from a side surface of the package. the first terminal group, and the second terminal group
A large-scale integrated circuit device comprising: a second group of terminals connected to respective lead wires of the high-density integrated circuit and led out from the bottom surface of the package.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61193512A JPH0815198B2 (en) | 1986-08-19 | 1986-08-19 | Large-scale integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61193512A JPH0815198B2 (en) | 1986-08-19 | 1986-08-19 | Large-scale integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6348852A true JPS6348852A (en) | 1988-03-01 |
JPH0815198B2 JPH0815198B2 (en) | 1996-02-14 |
Family
ID=16309292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61193512A Expired - Lifetime JPH0815198B2 (en) | 1986-08-19 | 1986-08-19 | Large-scale integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0815198B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8933555B2 (en) | 2009-05-15 | 2015-01-13 | Infineon Technologies Ag | Semiconductor chip package |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54144872A (en) * | 1978-05-04 | 1979-11-12 | Omron Tateisi Electronics Co | Electronic circuit device |
JPS57195844U (en) * | 1981-06-05 | 1982-12-11 |
-
1986
- 1986-08-19 JP JP61193512A patent/JPH0815198B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54144872A (en) * | 1978-05-04 | 1979-11-12 | Omron Tateisi Electronics Co | Electronic circuit device |
JPS57195844U (en) * | 1981-06-05 | 1982-12-11 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8933555B2 (en) | 2009-05-15 | 2015-01-13 | Infineon Technologies Ag | Semiconductor chip package |
DE102010016798B4 (en) * | 2009-05-15 | 2016-12-22 | Infineon Technologies Ag | Semiconductor chip package |
Also Published As
Publication number | Publication date |
---|---|
JPH0815198B2 (en) | 1996-02-14 |
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