JPS6348208B2 - - Google Patents
Info
- Publication number
- JPS6348208B2 JPS6348208B2 JP54047801A JP4780179A JPS6348208B2 JP S6348208 B2 JPS6348208 B2 JP S6348208B2 JP 54047801 A JP54047801 A JP 54047801A JP 4780179 A JP4780179 A JP 4780179A JP S6348208 B2 JPS6348208 B2 JP S6348208B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor switch
- light
- photosensitive
- turn
- optically coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 8
- 230000002708 enhancing effect Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 18
- 230000003321 amplification Effects 0.000 description 17
- 230000006378 damage Effects 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
- H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
Landscapes
- Electronic Switches (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4780179A JPS55138927A (en) | 1979-04-17 | 1979-04-17 | Photo-coupling semiconductor switch device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4780179A JPS55138927A (en) | 1979-04-17 | 1979-04-17 | Photo-coupling semiconductor switch device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138927A JPS55138927A (en) | 1980-10-30 |
JPS6348208B2 true JPS6348208B2 (enrdf_load_stackoverflow) | 1988-09-28 |
Family
ID=12785464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4780179A Granted JPS55138927A (en) | 1979-04-17 | 1979-04-17 | Photo-coupling semiconductor switch device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138927A (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930326A (ja) * | 1982-08-12 | 1984-02-17 | Mitsubishi Electric Corp | 信号伝送回路 |
JPH0683047B2 (ja) * | 1986-09-22 | 1994-10-19 | 三菱電機株式会社 | 発光素子駆動回路 |
JPH0683048B2 (ja) * | 1986-10-02 | 1994-10-19 | 三菱電機株式会社 | 発光素子駆動回路 |
JPH01137824A (ja) * | 1987-11-25 | 1989-05-30 | Matsushita Electric Works Ltd | スイッチング装置 |
JPH052452U (ja) * | 1991-02-21 | 1993-01-14 | 三菱電機株式会社 | 半導体遮断器 |
JP2007150003A (ja) * | 2005-11-29 | 2007-06-14 | Fuji Electric Device Technology Co Ltd | 絶縁形信号伝送回路 |
-
1979
- 1979-04-17 JP JP4780179A patent/JPS55138927A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55138927A (en) | 1980-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4366522A (en) | Self-snubbing bipolar/field effect (biofet) switching circuits and method | |
US4604638A (en) | Five layer semiconductor device with separate insulated turn-on and turn-off gates | |
US4564769A (en) | Saturation control of a switching transistor | |
JPS6348208B2 (enrdf_load_stackoverflow) | ||
US4636713A (en) | Monolithically integratable control circuit for switching inductive loads comprising a Darlington-type final stage | |
US4246501A (en) | Gated back-clamped transistor switching circuit | |
US4520277A (en) | High gain thyristor switching circuit | |
US4588904A (en) | High efficiency bias circuit for high frequency inductively loaded power switching transistor | |
US4013904A (en) | Darlington transistor switching circuit for reactive load | |
JPH0678525A (ja) | ドライブ回路 | |
US3599000A (en) | Semiconductor optoelectronic logic element utilizing the gunn effect | |
US4398205A (en) | Gate turn-off device with high turn-off gain | |
EP0463325A2 (en) | Device and method for driving semiconductor device having bipolar transistor, insulated gate FET and thyristor combined together | |
JPS62250719A (ja) | 半導体リレ−回路 | |
JPH07226130A (ja) | 低障害電波放射型大電流ソリッドステートリレー | |
US4213067A (en) | Integrated gate turn-off device with non-regenerative power portion and lateral regenerative portion having split emission path | |
US5030862A (en) | Turn-off circuit for gate turn off SCR | |
US3840275A (en) | Switching circuit utilizing gate controlled switching device | |
RU2783339C1 (ru) | Конструкция для повышения скорости переключения электронного силового переключающего устройства и ее применение | |
JPH026230B2 (enrdf_load_stackoverflow) | ||
JP3039092B2 (ja) | 短絡保護回路 | |
EP0025660A1 (en) | An optical coupling device | |
KR940002276Y1 (ko) | Gto 다이리스터의 구동제어회로 | |
JPS5917863B2 (ja) | サイリスタ | |
JPH0653796A (ja) | スイッチング素子の駆動回路 |