JPS63480A - Vapor growth device - Google Patents

Abstract

PURPOSE:To reduce the time required for heating and cooling a work by attaching and detaching a heating means having large heat capacity to and from a work holding means having the small heat capacity in a vacuum vessel from and to the outside of the vacuum vessel. CONSTITUTION:A sample 42 is held by a susceptor 43a having the small heat capacity in the vacuum vessel 41 at the time of forming the thin film on the surface of the sample 42 which is the work by a plasma CVD method. A heater block 52a having the large heat capacity is mounted to the outside of the vacuum vessel 41 in such a manner that said block can be freely attached to an detached from the susceptor 43a. The heater block 52a is held in tight contact with the susceptor 43a and the sample 42 is heated by the heater 53 through the susceptor 43a at the time of forming the thin film on the sample 42 surface in this state. The heater block 52a is detached from the susceptor 43a when the formation of the thin film ends. The sample 42 is thereby quickly and efficiently heated and cooled.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to plug 7 CV D (Chemi ca
The present invention relates to a vapor phase growth apparatus for forming a thin film on the surface of a sample, which is a workpiece, by a vapor deposition method.

In the conventional plasma CVD method, a sample is held in a vacuum container, and a compound gas containing the constituent elements of the thin film to be formed is supplied.
Exciting the compound gas by high frequency energy,
This is a method of forming (depositing) a thin film on a sample surface by placing the sample surface in a low-temperature plasma atmosphere.

A conventional example of a vapor phase growth apparatus will be described below with reference to the drawings.

FIG. 3 shows a conventional vapor phase growth apparatus. In Figure 3,
11 is a vacuum container, 12 is a sample, 13 is a sample stage, 14 is a heater mounted inside the sample stage 13, 15 is an AC power supply,
16 is an electrode to which high frequency power is supplied, 17 is a high frequency power source, 18 is a vacuum pump, 19 is a pipe for evacuation, 20
21 is a butterfly valve for controlling the pressure inside the vacuum vessel, and 21 is a gas supply port for supplying a compound gas containing the constituent elements of the thin film into the vacuum vessel 11.

The operation of the vapor phase growth apparatus configured as described above will be described below.

First, the inside of the vacuum container 11 is evacuated to a predetermined pressure using the vacuum pump 18, and then a compound gas containing the constituent elements of the thin film to be formed on the surface of the sample 12 is introduced into the vacuum container 11 via the gas supply device 21. At the same time, the butterfly valve 20 is operated to maintain the thin film forming conditions, that is, the pressure of 100 to 4
The inside of the vacuum vessel 11 is controlled to 00 mTorr. Further, the sample 12 is heated and controlled to a temperature of about 300'C by the sample stage 13.

Next, the compound gas is excited by supplying high-frequency power with a frequency of 50 KHz to the electrode 16, and the surface of the sample 12 is exposed to the low-temperature plasma atmosphere, thereby forming a plasma CVD film on the surface of the sample 12.

However, the plasma CVD film is not only deposited on the surface of the sample 12 but also on the inner surface of the vacuum container 11 and the surface of the sample stage 13. As such unnecessary deposited film increases in thickness, it breaks into thin pieces and adheres to the surface of the sample 12, so it is usually necessary to clean it every few micrometers of deposition. For cleaning, use a mixed gas of CF and O or SF.
This is carried out by a dry etching method in which high frequency power is supplied to the electrode 16 while introducing 6 into the vacuum container 11.

However, since it is impossible to completely clean the interior of the vacuum container 11 from corner to corner, the heater 14 is periodically turned off and the temperature is lowered to near room temperature, and then the vacuum container 11 is dismantled and cleaned.

Problems to be Solved by the Invention However, the above configuration has the following problems. In other words, the sample stage has a high heat capacity to keep the sample temperature constant, and since it is kept at around 300°C, it takes 200°F for the temperature to drop to near room temperature.
It takes about 3 hours. Conversely, once the temperature is lowered, it takes about 2 hours to raise it to about 300'C. Furthermore, a similar amount of time is required when replacing the heater due to a breakage or the like.

In view of the above-mentioned problems, the present invention provides a vapor phase growth apparatus that can reduce the loss of time for raising and lowering the temperature of the sample stage.

Means for Solving the Problems A first aspect of the present invention for solving the above problems is a vapor phase growth apparatus that is equipped with a detachable heating means for heating the workpiece holding means from the outside of the vacuum vessel. It is.

Further, in a second aspect of the present invention, a plurality of plate-shaped protrusions are provided on a surface of the vacuum container that contacts the heating means, and a plurality of grooves that engage with the plurality of plate-shaped protrusions are provided in the heating means. It is something.

Operation The first aspect of the present invention operates as follows due to the above-mentioned configuration. Since the workpiece holding means with a small heat capacity and the heating means with a large heat capacity are separated, in order to raise the temperature of the workpiece holding means, the heating means, which has been maintained at a predetermined temperature, is brought into close contact with the outside of the vacuum container. . Since the workpiece holding means has a small heat capacity, the temperature rises in a short period of time. When lowering the temperature, the temperature of the workpiece holding means is lowered in a short time by separating the heating means from the outside of the vacuum container.

Further, in the second aspect of the present invention, the rate of temperature drop during cooling is further increased due to the effect of the plate-shaped protrusions provided on the vacuum container as heat radiation fins.

EXAMPLE Hereinafter, a vapor phase growth apparatus according to an example of the present invention will be described with reference to the drawings.

FIG. 1 shows a schematic cross-sectional view of a vapor phase growth apparatus in a first embodiment of the present invention.

In FIG. 1, 41 is a vacuum container capable of maintaining a vacuum state, 42 is a sample as a workpiece on which a plasma CVD film is formed, and 43a is a heater that holds the sample 42 and has a heater on the bottom surface as a heating means. A sample stand serving as a grounded workpiece holding means capable of heating the sample 42 by being in contact with the block 62a;
47 is a gas supply port for introducing compound gas into the vacuum container 41; 48 is a high frequency power source with a frequency of 50 kHz; 49 is a vacuum container A vacuum pump as a means for evacuation to bring the pressure inside 41 to a degree of vacuum below atmospheric pressure; 50 is a pipe for evacuation that airtightly connects the vacuum container 41 and the vacuum pump 49; 51;
ri: a pressure control device for controlling the pressure inside the vacuum container 41; 52a: a heater block as a movable heating means for heating the sample 42 via the sample stage 43a; 6;
3 is a heater inside the heater block.

The operation of the vapor phase growth apparatus configured as described above will be described below.

First, the inside of the vacuum container 41 is evacuated to a predetermined pressure using the vacuum pump 48, and then a compound gas containing the constituent elements of the thin film to be formed on the surface of the sample 42 is introduced into the vacuum container 41 through the gas supply port 47. At the same time, the butterfly valve 61 is operated to adjust the pressure, which is the thin film forming condition, i.e., 100 to 40
The inside of the vacuum container 41 is controlled to 0 mTorr. Further, the sample 42 is heated and controlled to a temperature of about 300° C. by the sample stage 43a. Next, a frequency of 50 KHz is applied to the electrode 46.
The compound gas is excited by supplying high frequency power, and the surface of the sample 42 is exposed to the low-temperature plasma atmosphere, thereby forming a plasma CVD film on the surface of the sample 42.

However, the plasma CVD film is deposited not only on the surface of the sample 42 but also on the inner surface of the vacuum container 41 and the surface of the sample stage 438. As such unnecessary deposited film becomes thicker, it cracks and adheres to the surface of the sample 42 in thin pieces, so it is usually necessary to clean it every several micrometers of deposition. For cleaning, use a mixed gas of CF and O or SF.
is carried out by a dry etching method in which high frequency power is supplied to the electrode 46 while introducing it into the vacuum vessel 41.

However, since it is impossible to completely clean every corner of the inside of the vacuum container 41, it is necessary to separate the vacuum container 41 and clean it. At this time, by separating the heater block 52a from the sample stage 43a, the temperature of the sample stage 43, which has a small heat capacity, is reduced by about 20 minutes.

Next, after disassembling and cleaning the vacuum container 41 and reassembling it, the heater block 52a'i-sample stage 43
Place it back on a. Since the temperature of the heater block 52a is controlled to always maintain a constant temperature, the temperature does not change while the heater block 52a is away from the sample stage 43a. In addition, since the heat capacity of the heater block 52a is sufficiently larger than that of the sample stand 43a, the sample stand 43a
The temperature will return to normal in about 15 minutes.

As described above, according to this embodiment, the removable heater block 5 heats the sample stage 43 from the outside of the vacuum container 41.
2, it is possible to reduce time loss due to rises and falls in the temperature of the sample stage 43a.

Next, a second embodiment of the present invention will be described with reference to the drawings.

FIG. 2 is a sectional view of a vapor phase growth apparatus showing a second embodiment of the present invention. In the figure, 41 is a vacuum container capable of maintaining a vacuum state, 42 is a sample as a workpiece on which a plasma CVD film is formed, and 43b is a sample f! 42, and a grounded sample stand as a workpiece holding means capable of heating the sample 42 by having a heater block s2b as a heating means in contact with the lower surface thereof; 45 is an AC power source; 46 is an electrode made of aluminum that can supply high frequency power of 50 KH2, 47 is a gas supply port for introducing compound gas into the vacuum container 41, 48 is a high frequency power source with a frequency of 60 KHz, and 49 is a vacuum container 41
a vacuum pump as a means for evacuation to reduce the internal pressure to a degree of vacuum below atmospheric pressure; reference numeral 60 denotes a vacuum evacuation pipe that airtightly connects the vacuum container 41 and the vacuum pump 49;
1 is a pressure control device for controlling the pressure inside the vacuum container 41; 52b is a heater block as a movable heating means for heating the sample 42 via the sample stage 43b; 53
is the heater inside the heater block. The above is the first
The configuration is the same as the one shown in the figure.

The difference from the configuration shown in FIG. 1 is that the plurality of plate-shaped protrusions 54 are
The provision of a plurality of grooves 65 on the surface of the vacuum container 41 that is in contact with the heater block 62b outside the heater block s
2b is provided on the surface in contact with the vacuum container 41 so as to engage with the plate-shaped protrusion 54.

The operation of the vapor phase growth apparatus configured as described above will be described below.

First, the inside of the vacuum container 41 is evacuated to a predetermined pressure using the vacuum pump 48, and then a compound gas containing the constituent elements of the thin film to be formed on the surface of the sample 42 is introduced into the vacuum container 41 through the gas supply port 47. While operating the butterfly valve 61, the pressure that is the thin film forming condition, that is, 1Q○~40
The inside of the vacuum container 41 is controlled to 0 mT o r r. Further, the sample 42 is heated and controlled to a temperature of about 300°C by the sample stage 43b. Next, a frequency of 50 KHz is applied to the electrode 46.
The compound gas is excited by supplying high frequency power, and the surface of the sample 42 is exposed to the low-temperature plasma atmosphere, thereby forming a plasma CVD film on the surface of the sample 42.

However, the plasma CVD film is not only deposited on the surface of the sample 42, but also on the inner surface of the vacuum container 41 and the surface of the sample stage 43b. As such unnecessary deposited film becomes thicker, it cracks and becomes flakes and adheres to the surface of the sample 42, so it is usually necessary to clean it every several micrometers of deposition. For cleaning, use a mixed gas of CF4 and 02 or SF.
This is done by a dry etching method in which high frequency power is supplied to the electrode 46 while introducing 6 into the vacuum container 41. However, it is impossible to completely clean every corner of the inside of the vacuum container 41, so it is necessary to disassemble the vacuum container 41 and clean it. At this time, when the heater block s2b is pulled away from the sample stage 43b, the temperature of the sample stage 43b decreases by approximately 15 minutes due to the small heat capacity of the sample stage 43b and the plurality of plate-shaped protrusions 64 acting as radiation fins. It goes down. Next, the vacuum container 410 is disassembled and cleaned and reassembled, and then the heater block 52b is brought back into close contact with the sample stage 43b. Since the heater block s2b is temperature-controlled and always maintains a constant temperature, the temperature does not change while it is away from the sample stage 43b. Also heater block s2
The heat capacity of b is sufficiently large compared to that of the test case 43b, and the contact area between the plate-shaped protrusion 54 on the outside of the container A and the heater block 52b is increased, and the heat transfer speed is increased. Because it is done,
The strength of the sample stage 43b returns to its original state in about 10 minutes.

By providing the plate-shaped protrusions 54 and the grooves 55 as described above, it is possible to further reduce the time loss due to rises and falls in the temperature of the sample stage 43b than in the first embodiment.

Effects of the Invention As described above, the first aspect of the present invention is to provide a removable heating means for heating the workpiece holding means from the outside of the vacuum container, thereby controlling the rise and fall of the temperature of the workpiece holding means. The time required can be reduced.

Moreover, the second invention of the present invention provides, in addition to the configuration of the first invention, by providing a plurality of plate-shaped protrusions on the vacuum container.
The rate of temperature drop during cooling can be further increased.

[Brief explanation of the drawing]

Fig. 1 is a sectional view of a vapor phase growth apparatus in an embodiment of Ml of the present invention, Fig. 2 is a sectional view of a vapor phase growth apparatus in a second embodiment of the invention, and Fig. 3 is a sectional view of a vapor phase growth apparatus in an embodiment of the present invention. FIG. 2 is a cross-sectional view of the device. 41...Vacuum container, 43a, 43b...
・Sample stage, 46... Electrode, 48... High frequency power supply, 49... Vacuum pump, 61...
...Pressure control device, 47... Gas supply port, 62
a, 52 b... Heater block, 6
3...Heater, 54...Plate-like protrusion, 55...Groove. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 3
figure

Claims (2)

[Claims] (1) a vacuum container capable of maintaining a vacuum state; a vacuum evacuation means for creating a reduced pressure atmosphere in the vacuum container; a pressure control means for bringing the pressure inside the vacuum container to a predetermined value; a gas supply means for introducing gas into the vacuum container; a workpiece holding means for holding the workpiece; a high-frequency power source for supplying high-frequency power to the electrode via a matching circuit, and a detachable heating means for heating the workpiece holding means from outside the vacuum container. A vapor phase growth device consisting of. (2) a vacuum container capable of maintaining a vacuum state; a vacuum evacuation means for creating a reduced pressure atmosphere in the vacuum container; a pressure control means for bringing the pressure inside the vacuum container to a predetermined value; a gas supply means for introducing gas into the vacuum container; a workpiece holding means for holding the workpiece; an electrode for generating low-temperature plasma in a space contained therein, a high-frequency power supply for supplying high-frequency power to the electrode via a matching circuit, and a removable heating means for heating the workpiece holding means from outside the vacuum container. , a surface of the vacuum container in contact with the heating means has a plurality of plate-shaped protrusions, and a surface of the heating means in contact with the vacuum container is provided with a plurality of grooves that engage with the plurality of plate-shaped protrusions. Characteristic vapor phase growth equipment.