JPH07331445A - Treatment device and method for washing cover body used in the treatment device - Google Patents

Abstract

PURPOSE:To prevent contamination of a wafer with particles and to reduce the downtime of a device so as to improve a working rate by providing the device with a means capable of easily cleaning the inside of a treating chamber and more particularly a shower head and the inner side faces of the treating chamber. CONSTITUTION:This treatment device 1 is constituted to treat a work W placed on a stage 25 in the hermetic treating chamber 2 by using a treating gas introduced from the shower head 6 arranged to face the work. The cover body 60 for preventing adhesion of deposits on the outer peripheral part of the shower head 6 is freely attachably and detachably mounted at the device. The deposits adhered on the cover body are removed by cleaning the cover body.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus, and more particularly to a thermal CV for processing an object to be processed by heating an object to be processed such as a semiconductor wafer and introducing a processing gas into a processing chamber.
The present invention relates to a D device and a plasma CVD device.

[0002]

2. Description of the Related Art Conventionally, a processing apparatus is known in which a mounting table having a heating source is installed in a processing chamber, and a shower head for ejecting a processing gas is arranged above the mounting table. In such a processing apparatus, an object to be processed is carried in from a load lock chamber or the like adjacent to the processing chamber, and the object to be processed is placed on a mounting table in the processing chamber. Then, the object to be processed is heated by the heating source built into the mounting table, and the processing gas is introduced into the processing chamber through the shower head, whereby the film forming process, the etching process, and the ashing process are performed on the object. Various processing such as is performed.

However, in the processing apparatus as described above, at the time of so-called process for processing the object to be processed, the shower head, the ceiling surface of the processing chamber, the inner surface of the processing chamber, and the like, other than the object, are treated. However, there is a problem that deposits as by-products of film formation and etching adhere. The depot generated in this way becomes particles and scatters in the processing chamber, and adheres to the object to be processed as contamination,
This causes adverse effects such as deterioration of the film quality and uniformity of the object to be processed.

Therefore, conventionally, in order to remove such a depot, the processing chamber is periodically opened, the shower head is removed, and the cleaning is performed. On the other hand, a method has also been adopted in which a cleaning gas such as ClF ₃ or NF ₃ is periodically introduced into the processing chamber to clean the depot in the processing chamber.

[0005]

However, it is very troublesome to remove the shower head each time cleaning is performed, and it takes a long time for cleaning. Therefore, the conventional processing apparatus requires a lot of time and labor to clean the depot, resulting in a long downtime in which the processing apparatus cannot operate, a low operation rate, and poor COO (Cost of ownership).

On the other hand, the method of removing the deposit by using the cleaning gas is not a perfect method because it is difficult to perform uniform cleaning because there are places where the cleaning gas easily flows and places where the cleaning gas does not flow.
Further, cleaning gases such as ClF ₃ and NF ₃ are expensive, and since they are dangerous gases, a special device for treating the gas after cleaning is required, which causes a problem of high cost. Further, when cleaning is performed using NF ₃ , it takes a long time for cleaning unless plasma is generated in the processing chamber.
On the other hand, when cleaning is performed using ClF ₃ , it is not necessary to generate plasma, but instead, unnecessary portions such as the shower head and the inner surface of the processing chamber are etched, which causes a problem that the apparatus is damaged. In particular, in a transparent processing chamber made of quartz, if such gas cleaning is performed for a long time, a phenomenon such as devitrification, which loses transparency, may occur, and there is a concern that the processing chamber cannot be continuously used. is there. Also, in an aluminum processing chamber, AlF ₃ (aluminum fluoride) produced by the reaction of aluminum and ClF ₃ sublimes at about 600 ° C, and these become particles again and cause contamination. Therefore, it may not be useful for cleaning.

Therefore, according to the present invention, by providing means for easily cleaning the shower head in the processing chamber and the inner surface of the processing chamber, the particle contamination of the wafer can be prevented and the downtime of the apparatus can be reduced. The purpose is to improve the operating rate.

[0008]

According to the present invention, the processing gas introduced from the shower head arranged opposite to the object to be processed placed on the mounting table in the airtight processing chamber is provided. There is provided a processing device which is processed by using a cover body which is detachably attached to the outer peripheral portion of the shower head so as to prevent the deposit from adhering to the shower head.

This processing apparatus further has the following features. A recess or a projection is formed on the outer surface of the shower head, and a projection or a recess is formed on the inner surface of the cover body, and the cover body can be detachably attached to the shower head by the engagement of the projections and recesses. To configure. A recess is formed on the outer surface of the shower head, and the cover body can be detachably attached to the shower head by engaging the tip of a screw screwed from the outside of the cover body with the recess. -On the bottom surface of the cover body, there are formed openings for exposing a plurality of gas ejection holes formed on the bottom surface of the shower head into the processing chamber. -On the bottom surface of the cover body, a plurality of openings corresponding to the plurality of gas ejection holes formed in the bottom surface of the shower head are formed. -The above-mentioned cover body is configured to cover the ceiling surface of the processing chamber.

Further, according to the present invention, the following method is provided as a method for cleaning the cover body used in the above processing apparatus.・ With the cover body still attached to the shower head of the processing apparatus, ClF ₃ gas, CF ₄ gas,
A cleaning method in which a cleaning gas such as NF ₃ gas is introduced to perform dry cleaning. A cleaning method in which the cover body removed from the shower head of the processing apparatus is wet-cleaned with a cleaning liquid such as IPA (isopropyl alcohol), water, and dilute hydrofluoric acid.

In these cleaning methods, the timing for cleaning the cover body is determined as follows, for example. Counting the number of adhering particles for each of the object to be processed before processing and the object to be processed in the processing apparatus, and cleaning the cover body when the difference in the number of adhering particles exceeds a predetermined number. To do. The number of particles scattered in the atmosphere exhausted from the processing chamber is counted, and when the number of particles exceeds a predetermined number, the cover body is cleaned. The cleaning of the cover body is performed when the processing device has processed a predetermined number of objects.

[0012]

In the processing apparatus of the present invention, the depot generated by processing the object to be processed in the processing chamber is mounted on the cover body mounted around the shower head or the inner surface of the processing chamber. It is attached to the side cover to prevent the deposit from directly attaching to the periphery of the shower head or the inner surface of the processing chamber. As a result, the depot that has adhered to the area around the shower head may become dusty,
It is possible to prevent contamination of an object to be processed, which is to be subjected to subsequent film formation, etching, etc., as a cause of generation of particles, and to improve product yield.

The cover body and the inner surface cover body to which the deposit is attached in this way are treated with ClF ₃ gas, CF ₄ gas,
Dry cleaning is carried out by inflowing a cleaning gas such as NF ₃ gas, or IPA (isopropyl alcohol), water,
Wet cleaning can be performed using a cleaning liquid such as dilute hydrofluoric acid. Note that the wet-cleaned cover body can be reused by mounting it in the processing chamber again. Further, the ClF ₃ gas can be diluted with N ₂ gas to perform cleaning without plasma, which is convenient. When CF ₄ gas or NF ₃ gas is used as the cleaning gas, high-frequency voltage is applied to the electrodes to generate plasma, so that cleaning can be performed.

[0014]

EXAMPLE An example of the present invention will be described below with reference to a CVD apparatus. FIG. 1 schematically shows a cross section of a single-wafer CVD apparatus 1 according to the embodiment.
Has a substantially cylindrical processing chamber 2 that can be evacuated to a predetermined reduced pressure atmosphere.

The ceiling surface 3 of the processing chamber 2 is configured to be openable upward through a hinge portion 5. A shower head 6 having a hollow cylindrical shape is airtightly provided in the center of the ceiling surface 3. A processing gas supply pipe 7 is connected to an upper portion of the shower head 6, and a flow rate controller (MF) is connected from a processing gas source 8.
A processing gas such as a mixed gas of SiH ₄ (silane) + H ₂ is introduced into the shower head 6 via C) 10. On the lower surface of the shower head 6, that is, on the surface facing the mounting table 25 described later, a plurality of gas ejection ports 11 are formed.
The processing gas introduced into the shower head 6 from the processing gas introducing pipe 7 is evenly ejected toward the mounting table 25 in the processing chamber 2 through the gas ejection ports 11.

On the other hand, in the vicinity of the bottom of the processing chamber 2, an exhaust pipe 16 communicating with an exhaust means 15 such as a vacuum pump is provided.
A particle counter 17 such as a laser counter for counting the number of particles scattered in the atmosphere exhausted from the processing chamber 2 in the middle of the exhaust pipe 16.
Is provided. The operation of the exhaust means 15 allows the processing chamber 2 to be set and maintained at a predetermined reduced pressure atmosphere, for example, 10 ⁻⁶ Torr.

The bottom of the processing chamber 2 has a substantially cylindrical support 20.
Is formed by a bottom plate 21 supported by, and a cooling water reservoir 22 is provided inside the bottom plate 21, and cooling water supplied by a cooling water pipe 23 is circulated in the cooling water reservoir 22. Has been done.

The mounting table 25 is provided on the upper surface of the bottom plate 21 via a heater 26, and the heater 26 and the mounting table 25 are surrounded by a heat insulating wall 27.
An object W to be processed such as a semiconductor wafer is placed on the table 25. The heat insulating wall 27 has a surface that is mirror-finished and reflects radiant heat from the surroundings so as to insulate heat. The heater 26 has a configuration in which a substantially strip-shaped heating element is embedded in an insulator in a predetermined pattern, for example, in a spiral shape, and has a predetermined temperature by a voltage applied from an AC power source (not shown) installed outside the processing chamber 2. 400 ° C
It is possible to generate heat up to 2000 ° C. and maintain the target object W placed on the mounting table 25 at a predetermined temperature, for example, 800 ° C.

An electrostatic chuck 30 for attracting and holding the object W to be processed is provided on the upper surface of the mounting table 25. The electrostatic chuck 30 has a conductive film 33 such as a copper foil between two films 31 and 32 made of a polymer insulating material such as polyimide resin as a surface on which the object W to be processed is mounted and held.
And a variable direct-current voltage source (not shown) is connected to the conductive film 33. In this way, by applying a high voltage to the conductive film 33, the object W to be processed can be adsorbed and held on the upper surface of the upper film 31 of the electrostatic chuck 30 by Coulomb force.

The heat transfer medium supply pipe 3 penetrating the bottom plate 21 at the center of the mounting table 25 constructed as described above.
5, the heat transfer medium such as He gas supplied through the flow path 36 connected to the tip of the heat transfer medium supply pipe 35 is mounted on the mounting surface of the electrostatic chuck 30. It is configured to be supplied to the back surface of the processed object W.

A detection unit 38 of a temperature sensor 37 is located in the mounting table 25 and is configured to sequentially detect the temperature inside the mounting table 25. The mounting surface of the mounting table 25 can be controlled to a desired temperature by controlling the power of the AC power supply supplied to the heater 26 based on the signal from the temperature sensor 37. .

Further, the outer periphery of the side wall of the heat insulating wall 27 and the bottom plate 21
The outer periphery of the side surface of the support body 20, the outer periphery of the side surface of the support body 20, and the inner periphery of the side wall 40 of the processing chamber 2 are disposed in a substantially annular space. W
Is provided with a lifter 41 for lifting up and down.

The upper part of the lifter 41 is provided on the lower surface of the pair of semi-annular mounting members 42, 43 and the respective mounting members 42, 43 adapted to the curvature of the peripheral edge of the object W formed in a disk shape. The workpiece W is formed by the supporting columns 44 and 45 which are vertically provided.
It is placed on an appropriate locking portion provided at the peripheral edge of the inner peripheral portion of 3. On the other hand, as shown in FIG. 1, the lower configuration of the lifter 41 is such that the lower end portions of the support columns 44 and 45 are formed in the above-mentioned substantially annular space created by the outer circumference of the side surface of the heat insulating wall 12 and the like. The annular support plate 46 that hermetically closes the bottom is vertically movably penetrated and is connected to an elevating drive mechanism (not shown) such as a motor. It is configured to move up and down as shown by the reciprocating arrow. In addition, the support plate 46 in the processing chamber 2
Bellows 47 and 48 are respectively interposed at the places where the support pillars 44 and 45 pass through.
The airtightness inside the processing chamber 2 is secured by 48.

A load-lock chamber 52, which is airtightly configured through a gate valve 51, is provided outside the processing chamber 2 configured as described above, and an exhaust pipe 53 provided at the bottom thereof. The load lock chamber 52 is also evacuated from the inside of the load lock chamber 52, and like the processing chamber 2, a predetermined reduced pressure atmosphere, for example, 10 ⁻⁶ Torr can be set and maintained.

Inside the load lock chamber 52, between the cassette in the cassette storage chamber (not shown) and the mounting table 25 in the processing chamber 2, which are also adjacent to each other via the gate valve. A transfer device 55 including a transfer arm 54 that transfers the processing target W is provided.

Thus, the CVD configured as described above
A cover body 60, which is a feature of the present invention, is detachably attached around the shower head 6 of the apparatus 1. The cover body 60 is made of, for example, a PTFE (Teflon) material,
It is made of a material having insulating properties and heat resistance such as PFA, polyimide, PBI (polybenzimidazole), and polybenzazule. For example, in the case of plasma CVD, the mounting table 25 is heated to about 350 to 400 ° C. during the process, and in the case of a thermal CVD device, it is usually 650 ° C. or higher.
Since it is heated to about 800 ° C., the cover body 60 is made of a material that can withstand the radiant heat.

The cover body 60 of the embodiment has a structure in which a cylindrical side surface 62 is provided upright on the periphery of a disk-shaped bottom surface 61 so as to match the outer shape of the shower head 6. Figure 2
4 is a view showing a state in which the cover body 60 is viewed obliquely from below. In the illustrated example, a large-diameter opening 63 is formed in the bottom surface 61 of the cover body 60, and the cover body 6 is formed in the shower head 6.
When 0 is mounted, the plurality of gas ejection ports 11 formed on the bottom surface of the shower head 6 are configured to be exposed in the processing chamber 2 through the openings 63. Also, FIG.
Shows an embodiment of a cover body 60 in which a large number of openings 65 corresponding to a large number of gas ejection openings 11 formed on the bottom surface of the shower head 6 are formed on the bottom surface 61. In any case, it is desirable that the processing gas ejected from the gas ejection port 11 of the shower head 6 be smoothly supplied into the processing chamber 2.

The cover body 60 is detachably attached to the periphery of the shower head 6, and specifically has the following structure, for example.

In FIG. 4, a concave portion 70 is formed on the outer side surface of the shower head 6, and a convex portion 71 is formed on the inner side surface 62 of the cover body 60. The convex and concave portions are formed by utilizing the elasticity of the side surface 62 of the cover body 60. An embodiment is shown in which the cover body 60 can be attached to the shower head 6 by engaging the portions 70 and 71. In this case, as shown in FIG. 5, for example, the convex portions 71 may be formed at three positions inside the side surface 62 of the cover body 60 at 120 ° intervals so that the cover body 60 can be securely attached to the periphery of the shower head 6. You can wear it. Although FIG. 4 shows an example in which the concave portion 70 is formed on the shower head 6 side and the convex portion 71 is formed on the cover body 60 side, conversely, the convex portion is formed on the outer surface of the shower head 6. Of course, it is also possible to form recesses on the inner surface of the cover body 60 so that they are engaged with each other.

In FIG. 6, a recess 73 is formed on the outer side surface of the shower head 6, and the tip of a screw 75 screwed from the outside of the side surface 62 of the cover body 60 is engaged with the recess 73 so that the shower head 6 is supported. An example is shown in which the cover body 60 can be mounted. If the cover 75 is attached using the screw 75 as in this embodiment, there may be a slight gap between the outer surface of the shower head 6 and the inner surface of the cover 60. Even
The cover body 60 can be firmly attached.

The CVD apparatus 1 according to the embodiment of the present invention is configured as described above. Next, its operation will be described. When the processing chamber 2 and the load lock chamber 52 have the same reduced pressure atmosphere, The gate valve 51 is opened, and the object W to be film-formed is carried by the carrying arm 54 of the carrying device 55 to a position above the mounting table 25 in the processing chamber 2.

At this time, each mounting member 42 of the lifter 41,
43 is raised, and the object W to be processed is placed on the engaging portions of the inner peripheral edge portions of the respective placing members 42, 43. After placing the object W to be processed in this way, the transfer arm 54 retracts into the load lock chamber 52, and the gate valve 51 is closed.

After that, each mounting member 42 of the lifter 41,
43 is lowered, the object W to be processed is mounted on the mounting surface of the electrostatic chuck 30 of the mounting table 25, and a DC voltage from a high-voltage DC power source (not shown) is applied to the electrode plate 35, whereby the object to be processed W is processed. The body W is adsorbed and held on the mounting surface by the Coulomb force generated when the voltage is applied.

Then, after that, electric power from an AC power source (not shown) is supplied to the heating element of the heater 26 to heat the object W to a predetermined temperature, for example, 800 ° C. For example, SiH ₄ (silane) +
When H ₂ is introduced into the processing chamber 2, the film forming process of the object W to be processed is started.

When the film forming process is performed on the surface of the object W to be processed in this manner, the members in the processing chamber 2, especially the peripheral surface of the shower head 6 which is affected by the radiant heat from the mounting table 25, etc. The reaction product adheres to a portion other than the object W to be treated, and a depot is generated. The depot adheres to the cover body 60 mounted around the shower head 6 and the peripheral surface of the shower head 6. Depot does not adhere directly. And
When the etching process is completed, the gate valve 51 on the side surface of the processing chamber 2 is opened again, and the transport mechanism 5 in the load lock chamber 52 is opened.
5, the processed object W is unloaded from the processing chamber 2. Further, by the transport mechanism 55, the next target object W is processed.
Are loaded on the mounting table 25. After the loading, the gate valve 51 is closed again, and the film forming process of the object W is performed by the same process.

In this way, if a large amount of depot adheres to the cover body 60 after a certain amount of treatment is performed, leaving it as it is will cause contamination in the processing chamber 2. Therefore, after every predetermined number of treatments. It is necessary to clean the inside of the processing chamber 2. Therefore, in the present invention, the depot attached to the cover body 60 as described above is configured to be dry-cleaned or wet-cleaned.

In the dry cleaning, with the cover body 60 still attached to the shower head 6, C is placed in the processing chamber 2.
It is possible to carry out by inflowing a cleaning gas such as 1F ₃ gas, CF ₄ gas or NF ₃ gas. According to this method
It is not necessary to open the ceiling surface 3 of the processing chamber 2, and the cover body 60
Since it is possible to perform the cleaning while wearing, the cleaning is easy and easy. However, it is difficult to completely remove the deposit attached to the cover body 60 by dry cleaning, which is not a perfect method. Therefore, when completely cleaning the depot attached to the cover body 60, as shown in FIG. 7, the ceiling surface 3 of the processing chamber 2 is rotated around the hinge 5 to open the inside of the processing chamber 2. The cover body 60 to which the deposit is attached is removed from the shower head 6.
Then, as shown in FIG. 8, the cover body 60 is filled with IPA (isopropyl alcohol) in a container 80,
It is preferable to wash off the depot attached to the cover body 60 by immersing it in a cleaning liquid 81 such as water or hydrofluoric acid.

The time for cleaning the depot attached to the cover body 60 by the above dry cleaning or wet cleaning is determined as follows, for example. -The object W to be processed which is carried into the processing chamber 2 before being processed,
The number of adhering particles is counted for each of the processed objects W that have been carried out from the processing chamber 2, and the cover body 60 is cleaned when the difference in the adhering number becomes equal to or greater than a predetermined number. The particle counter 17 counts the number of particles scattered in the room atmosphere exhausted from the processing chamber 2 through the exhaust pipe 16, and covers when the number of particles in the exhaust reaches a predetermined number or more. The body 60 is cleaned. The cover body 60 is cleaned when a predetermined number of objects W to be processed are processed in the processing chamber 2.

As described above, the processing is continued while the depot is properly removed by performing the dry cleaning and the wet cleaning. Thus, by repeating the above steps, the depot generated in the processing chamber 2 can be attached to the removable cover body 60, and the situation in which the depot directly attaches to the shower head 6 can be prevented. . Therefore, according to the CVD apparatus 1 of the above-described embodiment, cleaning of the depot is significantly facilitated, particle contamination of the object to be processed W is prevented, downtime of the apparatus is reduced, and the operating rate is improved. Can be achieved.

When a plurality of cover bodies 60 are prepared in advance for one shower head 6 when performing the film forming process on the object W to be processed by the steps described above, one cover body 60 is prepared. While cleaning the
If another cover body 60 that has already been cleaned is attached to the shower head 6 to perform the film forming process, the processing apparatus can be operated almost continuously. As a result, the downtime of the device can be remarkably reduced and the operating rate can be further improved.

Incidentally, in order to remove the deposit attached to the cover body 60, a method such as dry cleaning or wet cleaning can be appropriately selected and used, but the advantage of dry cleaning is that the work is easier than wet cleaning. However, the cleaning is a little incomplete.
On the other hand, wet cleaning is superior to dry cleaning in terms of cleaning, but the work is relatively complicated. Therefore, normally, the depot attached to the cover body 60 is easily removed by dry cleaning without opening the processing chamber 2, and the processing chamber 2 is periodically opened to remove the cover body 60 from the shower head 6 for wet cleaning. It is preferable to completely wash off the deposit attached to the cover body 60 by performing the above procedure.

In the above embodiments, the cover body 60 covers only the periphery of the shower head 6, but the present invention is not limited to this. For example, as in the embodiment shown in FIG. 9, it is possible to cover the ceiling surface 3 of the processing chamber 2 together with the cover body 85 detachably attached to the shower head 6.
According to the cover body 85 of this embodiment, the shower head 6
There is an advantage that the depot can be prevented from directly adhering to the ceiling surface 3 of the processing chamber 2 as well as the surrounding area.

In addition to such a cover body 85, as shown in FIG. 10, a cylindrical inner surface cover body 86 for preventing the deposit from adhering to the inner surface of the processing chamber 2 is mounted. Further, it is more effective to adopt a structure in which the deposit does not directly adhere to the inner surface of the processing chamber 2. However, when such an inner surface cover body 86 is used, it is desirable to provide an opening 87 for loading / unloading the object W corresponding to the gate valve 51 shown in FIG. 1. The cover body 85 and the inner surface cover body 86 are, for example, similar to the cover body 60 described in detail above, for example, a PTFE (Teflon) material, PFA, polyimide, PBI (polybenzimidazole), polybenzoazul. Made of a material having insulation and heat resistance such as
It goes without saying that dry cleaning and wet cleaning are performed in the same process as 0.

In addition, in the embodiment shown in FIG.
The case where the bottom surface 61 of the cover body 60 is in close contact with the bottom surface of the shower head 6 has been described, but in the present invention,
For example, as in the cover body 90 shown in FIG. 11, the bottom surface 91 may be curved. Further, the preferred embodiment of the present invention has been described above by taking the CVD apparatus as an example, but the present invention is not limited to such a configuration, and in addition to this, a processing gas is introduced into the processing chamber to perform processing. The present invention can be applied to various devices such as a plasma CVD device, a sputtering device, an ashing device, and an etching device.

[0045]

According to the present invention, the deposits generated in the airtight processing chamber and attached to the cover body can be removed by cleaning the cover body, and the deposits can be prevented from directly attaching to the periphery of the shower head. Can be prevented. The cover body to which the deposit is attached can be dry-cleaned or wet-cleaned. Therefore, according to the present invention, particularly the shower head in the processing chamber and the inner surface of the processing chamber can be easily cleaned, and particle contamination of the object to be processed such as a semiconductor wafer can be prevented.
It is also possible to improve the operating rate of the device. Further, since the cleaning time of the cover body is determined by counting the particles, the processing environment of the object to be processed can be maintained at a predetermined cleaning degree or higher.

[Brief description of drawings]

FIG. 1 is an explanatory view schematically showing a cross section of a CVD apparatus according to an embodiment of the present invention.

FIG. 2 is a drawing showing a state in which a cover body having a large-diameter opening formed on the bottom surface is viewed from diagonally below.

FIG. 3 is a drawing showing a state in which a cover body having a large number of openings formed on its bottom surface is viewed obliquely from below.

FIG. 4 is an explanatory view of an embodiment in which a cover body is detachably attached to a shower head by engaging an uneven portion.

FIG. 5 is a plan view of the cover body according to the embodiment.

FIG. 6 is an explanatory view of an embodiment in which a screw is screwed in from the outside so that the cover body can be freely attached to the shower head.

FIG. 7 is a drawing showing a state in which a cover body having a deposit is removed from a shower head.

FIG. 8: State diagram of wet cleaning

FIG. 9 is an explanatory diagram of an embodiment in which the ceiling surface of the processing chamber is also covered with a cover body.

FIG. 10 is an explanatory diagram of an embodiment in which an inner surface cover body is attached to prevent the deposit from adhering to the inner surface of the processing chamber.

FIG. 11 is an explanatory diagram of an embodiment of a cover body having a curved bottom surface.

[Explanation of symbols]

 W Object to be processed 1 CVD apparatus 2 Processing chamber 6 Shower head 25 Mounting table 60 Cover body

Continuation of front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location H01L 21/304 L 21/31

Claims (11)

[Claims] 1. An object to be processed placed on a mounting table in an airtight processing chamber is treated by using a processing gas introduced from a shower head arranged opposite to the object to be processed. A processing apparatus comprising a cover body detachably attached to the outer peripheral portion of the shower head to prevent the deposit from being attached. 2. A recess or a protrusion is formed on the outer surface of the shower head, and a protrusion or a recess is formed on the inner surface of the cover body, and the cover body is attached to and detached from the shower head by the engagement of the recesses and protrusions. The processing apparatus according to claim 1, wherein the processing apparatus is configured to be freely movable. 3. A cover body can be detachably attached to the shower head by forming a recess on the outer surface of the shower head, and engaging the tip of a screw screwed from the outside of the cover body with the recess. The processing device according to claim 1, which is configured. 4. The bottom surface of the cover body is formed with an opening for exposing a plurality of gas ejection openings formed in the bottom surface of the shower head into the processing chamber.
The processing device according to any one of 3 above. 5. The bottom surface of the cover body is formed with a plurality of openings corresponding to a plurality of gas ejection holes formed in the bottom surface of the shower head. Processing equipment. 6. The processing apparatus according to claim 1, wherein the cover body also covers the ceiling surface of the processing chamber. 7. A ClF ₃ gas and a C in the processing chamber with the cover body being attached to the shower head of the processing apparatus.
The method for cleaning a cover body used in the processing apparatus according to claim 1, wherein a cleaning gas such as F ₄ gas or NF ₃ gas is introduced to perform dry cleaning. 8. The cover body removed from the shower head of the processing apparatus is replaced with IPA (isopropyl alcohol), water,
The method for cleaning a cover body used in the processing apparatus according to claim 1, wherein wet cleaning is performed using a cleaning liquid such as dilute hydrofluoric acid. 9. The cover is counted when the number of adhering particles is counted for each of the unprocessed object and the object processed by the processing apparatus, and the difference between the particle numbers reaches a predetermined number or more. 9. A method for cleaning a cover body used in the processing apparatus according to claim 7, wherein the body is cleaned. 10. The number of particles scattered in the atmosphere exhausted from the processing chamber is counted, and when the number of particles exceeds a predetermined number, the cover body is cleaned. Item 9. A method of cleaning a cover body used in the processing apparatus according to Item 7 or 8. 11. The method for cleaning a cover body used in the processing apparatus according to claim 7, wherein the cover body is cleaned when a predetermined number of objects to be processed are processed by the processing apparatus.