JPS634676A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS634676A JPS634676A JP61147202A JP14720286A JPS634676A JP S634676 A JPS634676 A JP S634676A JP 61147202 A JP61147202 A JP 61147202A JP 14720286 A JP14720286 A JP 14720286A JP S634676 A JPS634676 A JP S634676A
- Authority
- JP
- Japan
- Prior art keywords
- photoconductive
- photoelectric conversion
- conversion device
- compound semiconductor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 8
- 239000006104 solid solution Substances 0.000 abstract description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ファクシミリ装置、インテリジェントコピア
、光デイスク装置などの各種ＯＡ機器の画像入力部に用
いられる光電変換装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a photoelectric conversion device used in an image input section of various office automation equipment such as a facsimile machine, an intelligent copier, and an optical disk device.
（従来の技術）
近年、ファクシミリ装置等の各種ＯＡ機器に用いられる
画像情報入力装置は、小型化と画像歪の改良を目的とし
て開発された原稿の幅と同一寸法の密着型ラインセンサ
を組み込んだ画像読取り装置が使われ始めている。密着
性ラインセンサに用いる光電変換装置は、光導電素子と
してＣｄ５−ＣｄＳｅ固溶体又はアモルファスシリコン
を用いたものが発表されている。(Prior art) In recent years, image information input devices used in various office automation equipment such as facsimile machines incorporate a close-contact line sensor with the same dimensions as the width of the document, which was developed for the purpose of miniaturization and improvement of image distortion. Image reading devices are beginning to be used. Photoelectric conversion devices used in adhesive line sensors have been announced that use Cd5-CdSe solid solution or amorphous silicon as a photoconductive element.
（発明が解決しようとする問題点）
しかしながら、Ｃｄ５−Ｃｄ５ａ固溶体を光導電素子と
して使用した光電変換装置は、光電変換効率の点で優れ
ているが、応答速度が遅く、情報伝達の高速化の要求に
対応することが難しいという問題があった。(Problems to be Solved by the Invention) However, although a photoelectric conversion device using a Cd5-Cd5a solid solution as a photoconductive element is excellent in terms of photoelectric conversion efficiency, the response speed is slow and it is difficult to speed up information transmission. The problem was that it was difficult to meet the demands.
また、アモルファスシリコンを光導電素子として使用し
たが光電変換装置は、応答速度が速いが、光電変換効率
が低く感度が悪いため、変換された信号を増幅するトラ
ンジスタ等を各光導電素子の近傍に集積化する必要があ
り、製造が難しいという問題があった。In addition, although amorphous silicon is used as a photoconductive element, the photoelectric conversion device has a fast response speed, but has low photoelectric conversion efficiency and poor sensitivity, so a transistor or the like is placed near each photoconductive element to amplify the converted signal. There was a problem in that it required integration and was difficult to manufacture.
本発明は上記の問題点を解決するもので、光電変換効率
が高く、しかも応答速度が速い光電変換装置を提供する
。The present invention solves the above problems and provides a photoelectric conversion device with high photoelectric conversion efficiency and fast response speed.
（問題点を解決するための手段）
上記の問題点を解決するため１本発明は、絶縁基板上に
、主走査方向に並ぶように形成された複数個の光導電素
子群と、これらの光導電素子群上にそれぞれ形成された
対向電極群と、各種導電素子に形成されたマトリックス
電極群とから構成され、原稿からの反射光が上記の光導
電素子に照射される導光系を備えた光電変換装置で、光
導電素子は、絶縁基板上にＧｅ薄膜を介して形成した、
■・−■族化合物半導体もしくはこれを主体としてなる
化合物半導体とするものである。(Means for Solving the Problems) In order to solve the above problems, the present invention comprises a plurality of photoconductive element groups formed on an insulating substrate so as to be lined up in the main scanning direction, and a group of these photoconductive elements. The photoconductor is composed of a group of counter electrodes each formed on a group of conductive elements and a group of matrix electrodes formed on various conductive elements, and includes a light guiding system in which light reflected from the original is irradiated onto the photoconductive element. In the photoelectric conversion device, the photoconductive element is formed on an insulating substrate with a Ge thin film interposed therebetween.
It is a compound semiconductor of the 2.--3 group or a compound semiconductor mainly composed of this.
（作 用）
上記の構成により、絶縁基板上にＧｅ薄膜を介して形成
されたｍ−ｖ族化合物半導体は、高いキャリアの移動度
と、速いキャリア再結合時間を有するので、これらの特
性を利用し、短時間に有効な電気信号を取り出し、且つ
光照射が終了した後はキャリアが速やかに消失するため
、高速で且つ高感度の光電変換装置が得られるものであ
る。(Function) With the above configuration, the m-v group compound semiconductor formed on the insulating substrate via the Ge thin film has high carrier mobility and fast carrier recombination time, so these characteristics can be utilized. However, since an effective electrical signal can be extracted in a short time and carriers disappear quickly after light irradiation is finished, a high-speed and highly sensitive photoelectric conversion device can be obtained.
（実施例）
本発明の一実施例を第１図および第２図により説明する
。(Example) An example of the present invention will be described with reference to FIGS. 1 and 2.
第１図は本発明による光電変換装置を用いた密着型ライ
ンセンサの基本構成を示す断面図である。FIG. 1 is a sectional view showing the basic configuration of a contact type line sensor using a photoelectric conversion device according to the present invention.
同図において、密着型ラインセンサは、透明な基板１の
下面に、主走査方向に形成された断面が三角形の溝の中
にＬＥＤ（発光ダイオード）等の光源２および原稿３か
らの反射光を集光する収束性ファイバアレイ等の導光系
４からなる集光系と、上記の透明な基板１の上面にＧａ
薄膜５を介して形成された光導電素子８の両端にそれぞ
れ対向電極６とマトリックス電極７が重ねて形成された
光電変換装置とから構成されている。In the figure, the contact type line sensor emits reflected light from a light source 2 such as an LED (light emitting diode) and a document 3 into a groove with a triangular cross section formed in the main scanning direction on the lower surface of a transparent substrate 1. A light collection system consisting of a light guide system 4 such as a convergent fiber array that collects light, and a Ga
It consists of a photoelectric conversion device in which a counter electrode 6 and a matrix electrode 7 are stacked on both ends of a photoconductive element 8 formed with a thin film 5 interposed therebetween.
このように構成された密着型ラインセンサの動作につい
て説明すると、光源２の出射光が原稿３に照射され、そ
の反射光が導光系４で集光されて光導電素子８に照射さ
れる。対向電極６とマトリックス電極７の間にはバイア
ス電圧が印加されているので、光照射によって光導電素
子８に発生した電子正孔のキャリアは、上記のバイアス
電圧によって互いに逆方向の電極に向かって移動し、そ
の結果光電流として検出される。The operation of the contact type line sensor configured in this way will be described. The emitted light from the light source 2 is irradiated onto the original 3, and the reflected light is collected by the light guiding system 4 and irradiated onto the photoconductive element 8. Since a bias voltage is applied between the counter electrode 6 and the matrix electrode 7, carriers of electrons and holes generated in the photoconductive element 8 due to light irradiation are directed toward the electrodes in opposite directions due to the bias voltage. as a result of which it is detected as a photocurrent.
第２図は本発明による光電変換装置の要部拡大平面図で
、光電変換装置は、透明な基板１の表面にＧｅ薄膜５（
図示せず）を介して、複数本の短冊状の光導電素子８を
一群とする光導電素子群が、走査方向に並んで形成され
、上記の光導電素子群それぞれに対向電極６が、上記の
光導電素子８それぞれにマトリックス電極７が重なるよ
うに形成されている。FIG. 2 is an enlarged plan view of the main parts of a photoelectric conversion device according to the present invention. The photoelectric conversion device has a Ge thin film 5 (
(not shown), a photoconductive element group including a plurality of strip-shaped photoconductive elements 8 is formed side by side in the scanning direction, and each of the above photoconductive element groups has a counter electrode 6 connected to the above-mentioned photoconductive element group. A matrix electrode 7 is formed so as to overlap each of the photoconductive elements 8 .
上記の光導電素子８は、１ｗｕｓ当たり１６本の密度で
、相互に電気的に独立して形成されている。その形成法
を説明すると、まず、ガラスの基板１の表面に、電子ビ
ーム蒸着法を用い約１００人のＧａ薄膜５を形成した後
、通常のＭＯＣＶＤ法を用い約５０００人のＧａＡｓ膜
を形成する００次に、フォトリソグラフィー（写真製版
）法を用いて１幅２０μｍ１の微細な短冊状の光導電素
子８を形成する。なお、本実施例では、この時のエツチ
ングに塩酸を使用した。The photoconductive elements 8 described above are formed electrically independently of each other at a density of 16 elements per 1 wus. To explain the formation method, first, a Ga thin film 5 of about 100 layers is formed on the surface of a glass substrate 1 using an electron beam evaporation method, and then a GaAs film of about 5000 layers is formed using a normal MOCVD method. Next, photoconductive elements 8 in the form of fine strips each having a width of 20 μm 1 are formed using a photolithography (photoengraving) method. In this example, hydrochloric acid was used for etching.
上記の対向電極６とマトリックス電極７は、フォトリソ
グラフィー法によりＡｕ −Ｇｅを用いて形成する。な
お、対向電極６とマトリックス電極７の電極間距離は２
０μｍである。The above-mentioned counter electrode 6 and matrix electrode 7 are formed using Au-Ge by photolithography. Note that the distance between the opposing electrode 6 and the matrix electrode 7 is 2.
It is 0 μm.
本発明の特徴は、ガラス基板等の基板１の上に結晶性の
秀れたＧａＡｓ等の■−■族化合物半導体光導電膜を利
用し光導電素子８を形成した点にある。The feature of the present invention is that the photoconductive element 8 is formed on the substrate 1 such as a glass substrate by using a photoconductive film of a ■-■ group compound semiconductor such as GaAs having excellent crystallinity.
これらの光導電素子８では、照度１００Ｎｘ、波長５５
０ｎ−の光が照射された時、得られる電流は約１００μ
Ａ、その時の応答速度は約１μｓであった。These photoconductive elements 8 have an illuminance of 100 Nx and a wavelength of 55
When irradiated with 0n- light, the current obtained is approximately 100μ
A: The response speed at that time was approximately 1 μs.
このように従来のＣｄ５−ＣｄＳｅ固溶体を用いた同様
の構成を有する光導電素子に比べ、大きな光電流が得ら
れ、しかも応答時間が著しく改善されている。これは、
光導電流工、が、光導電膜のモビリティμと、多数キャ
リア寿命τの積に比例する、すなわち、■Ｐｃｃｐτで
表わされる。 ＧａＡｓ膜のτがＣｄ５−ＣｄＳｅ固溶
体に比べ約３桁小さく、高速化が実現し、しかもμが逆
に約３桁ないし４桁大きく、これを補っていることに起
因すると考えられる。As described above, compared to a conventional photoconductive element using a Cd5-CdSe solid solution having a similar structure, a larger photocurrent can be obtained and the response time is significantly improved. this is,
The photoconductive current is proportional to the product of the mobility .mu. of the photoconductive film and the majority carrier lifetime .tau., that is, it is expressed as .Pccp.tau.. This is thought to be due to the fact that τ of the GaAs film is about 3 orders of magnitude smaller than that of the Cd5-CdSe solid solution, achieving higher speed, and conversely, μ is about 3 to 4 orders of magnitude larger, which compensates for this.
なお、本実施例では、ｍ−ｖ族化合物半導体として、Ｇ
ａＡｓを用いたが、混晶を用いてその組成比を調整し、
吸収端の波長を変化させることも可能である。従って、
組成の異なる光導電素子８を交互に配列することにより
、カラー化に応用することも容易である。In this example, G is used as the m-v group compound semiconductor.
Although aAs was used, the composition ratio was adjusted using a mixed crystal,
It is also possible to change the wavelength of the absorption edge. Therefore,
By alternately arranging photoconductive elements 8 having different compositions, it is easy to apply the invention to coloring.
また、■−■族化合物半導体として、Ｇａ、ｉ。In addition, as the ■-■ group compound semiconductor, Ga, i.
Ｉｎ、ＡｓｖＰｖ系が考えられ、特に、 ＧａＩｎＡｓ
やＩｎＰに近い組成の半導体は、高い移動度を有するの
で、高感度の光電変換装置として、また、ＡＩＩＧａＩ
ｎＰやＡｌＧａＡｓに近い半導体は、短波長光源を用い
る光電変換装置として使用することができる。In, AsvPv systems are considered, especially GaInAs
Semiconductors with compositions close to InP and InP have high mobility, so they are used as highly sensitive photoelectric conversion devices and as AIIGaI.
Semiconductors similar to nP and AlGaAs can be used as photoelectric conversion devices using short wavelength light sources.
なお、本実施例では、■−■族化合物薄膜の形成にＭＯ
ＣＶＤ法を用いたが、ＭＢＥ法を用いることも可能であ
る。In addition, in this example, MO was used to form the ■-■ group compound thin film.
Although the CVD method was used, it is also possible to use the MBE method.
（発明の効果）
以上説明したように、本発明によれば、従来より著しく
高速、高感度の優れた性能を有する光電変換装置が可能
となる。(Effects of the Invention) As explained above, according to the present invention, it is possible to provide a photoelectric conversion device that has excellent performance, which is significantly faster and has higher sensitivity than the conventional photoelectric conversion device.
第１図は本発明による光電変換装置を備えた密着型ライ
ンセンサの基本構成を示す断面図、第２図は第１図の光
電変換装置の要部拡大平面図である。
１・・・透明基板、 ２・・・光源、 ３・・・原稿、
４・・・導光系、 ５・・・Ｇｅ薄膜、６・・・対向
電極、 ７ ・・・マトリックス電極、 ８・・・光導
電素子。
第１図
第２図FIG. 1 is a cross-sectional view showing the basic structure of a contact type line sensor equipped with a photoelectric conversion device according to the present invention, and FIG. 2 is an enlarged plan view of a main part of the photoelectric conversion device shown in FIG. 1. 1... Transparent substrate, 2... Light source, 3... Original document,
4... Light guide system, 5... Ge thin film, 6... Counter electrode, 7... Matrix electrode, 8... Photoconductive element. Figure 1 Figure 2
Claims (4)
た複数個の光導電素子群と、これらの光導電素子群ごと
にその上に形成された対向電極群と、上記の各光導電素
子上に形成されたマトリックス電極群とからなり、原稿
からの反射光が導光系を通して上記の光導電素子に照射
されるように構成された光電変換装置において、上記の
光導電素子群がＧｅ薄膜を介して形成されたIII−Ｖ族
化合物半導体もしくはそれを主体としてなる化合物半導
体であることを特徴とする光電変換装置。(1) A plurality of photoconductive element groups formed on an insulating substrate so as to be lined up in the main scanning direction, a counter electrode group formed on each of these photoconductive element groups, and each of the above-mentioned light A photoelectric conversion device comprising a matrix electrode group formed on a conductive element, and configured such that reflected light from an original is irradiated onto the photoconductive element through a light guide system, wherein the photoconductive element group is A photoelectric conversion device characterized in that it is a III-V group compound semiconductor formed through a Ge thin film or a compound semiconductor mainly composed of the III-V compound semiconductor.
ｎ＿ｚＡｓ＿ｖＰ＿ｗ系の半導体であることを特徴とす
る特許請求の範囲第（１）項記載の光電変換装置。(2) The III-V compound semiconductor is Ga_xAl_yI
The photoelectric conversion device according to claim (1), wherein the photoelectric conversion device is an n_zAs_vP_w semiconductor.
導体で、ｐ−ｎ接合を有する光導電素子群が形成されて
いることを特徴とする特許請求の範囲第（２）項記載の
光電変換装置。(3) The photoelectric conversion device according to claim (2), wherein the photoconductive element group having a pn junction is formed of a Ga_xAl_yIn_zAs_vP_w semiconductor.
許請求の範囲第（１）項記載の光電変換装置。(4) The photoelectric conversion device according to claim (1), wherein the insulating substrate is a glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61147202A JPS634676A (en) | 1986-06-25 | 1986-06-25 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61147202A JPS634676A (en) | 1986-06-25 | 1986-06-25 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS634676A true JPS634676A (en) | 1988-01-09 |
Family
ID=15424867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61147202A Pending JPS634676A (en) | 1986-06-25 | 1986-06-25 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS634676A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2669145A1 (en) * | 1990-11-09 | 1992-05-15 | Thomson Tubes Electroniques | ELECTRON CANON MODULE BY OPTOELECTRONIC SWITCHING. |
-
1986
- 1986-06-25 JP JP61147202A patent/JPS634676A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2669145A1 (en) * | 1990-11-09 | 1992-05-15 | Thomson Tubes Electroniques | ELECTRON CANON MODULE BY OPTOELECTRONIC SWITCHING. |
| US5313138A (en) * | 1990-11-09 | 1994-05-17 | Thomson Tubes Electroniques | Electron gun modulated by optoelectronic switching |
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