JPS62150767A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS62150767A JPS62150767A JP60291640A JP29164085A JPS62150767A JP S62150767 A JPS62150767 A JP S62150767A JP 60291640 A JP60291640 A JP 60291640A JP 29164085 A JP29164085 A JP 29164085A JP S62150767 A JPS62150767 A JP S62150767A
- Authority
- JP
- Japan
- Prior art keywords
- conversion device
- photoelectric conversion
- group
- photoconductive
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 10
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- 239000000835 fiber Substances 0.000 abstract description 2
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 108091006149 Electron carriers Proteins 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 101100499944 Arabidopsis thaliana POL2A gene Proteins 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ファクシミリ装置、インテリジェントコピア
や光ディスクなどの各種ＯＡ機器の画像入力部に用いら
れる光電変換装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photoelectric conversion device used in an image input section of various office automation equipment such as a facsimile machine, an intelligent copier, and an optical disk.
従来の技術
近年、ファクシミリ装置や各種ＯＡ機器の画像情報入力
装置の小型化や画像ひずみの改良を目指して、原稿と同
一寸法の密着型ラインセンサを開発し、これを組込んだ
画像読取装置が使用され始めている。密着型のラインセ
ンサの光導電素子については、ＣｄＳ −ＣｄＳｅ固溶
体又は、アモルファスシリコンを用いたものが発表され
ている。Conventional technology In recent years, with the aim of downsizing image information input devices for facsimile machines and various OA equipment and improving image distortion, a close-contact line sensor with the same dimensions as the document has been developed, and image reading devices incorporating this sensor have been developed. It is starting to be used. Regarding photoconductive elements for contact type line sensors, those using CdS-CdSe solid solution or amorphous silicon have been announced.
発明が解決しようとする問題点
ところが前者を用いたラインセンサでは光電変換効率は
優れているものの光導電素子の応答速度が遅く、情報伝
達の高速化の要求への対応が困難であった。また後者を
用いたものは、応答速度は速いが光電変換効率、即ち感
度が悪く、変換された信号を増幅するためのトランジス
タ等を各光導電素子の近傍に集積化する必要があり、製
造上困難であった。Problems to be Solved by the Invention However, although line sensors using the former type have excellent photoelectric conversion efficiency, the response speed of the photoconductive element is slow, making it difficult to meet the demand for faster information transmission. In addition, although the latter method has a fast response speed, the photoelectric conversion efficiency, that is, the sensitivity, is poor, and it is necessary to integrate transistors etc. in the vicinity of each photoconductive element to amplify the converted signal, which makes it difficult to manufacture. It was difficult.
本発明はかかる問題を克服し、高感度でかつ高速の光電
変換装置を提供するものである。The present invention overcomes these problems and provides a highly sensitive and high speed photoelectric conversion device.
問題点を解決するための手段
本発明は、絶縁基板上に形成され、主走査方向に並ぶ複
数個の光導電素子群と、それら各光導電素子上に形成さ
れた対向電極群と、各電極を結ぶマトリクス結線部とを
備え、原稿からの反射光が導光系を通して光導電素子に
当たるように構成されるとともに光導電素子群が、■−
■族化合物半導体を主体として成る光電変換装置である
。Means for Solving the Problems The present invention provides a plurality of photoconductive element groups formed on an insulating substrate and arranged in the main scanning direction, a counter electrode group formed on each of the photoconductive elements, and each electrode. and a matrix connection section connecting the
This is a photoelectric conversion device mainly composed of a group Ⅰ compound semiconductor.
作用
本発明は、■−ｖ族化合物半導体の有する高い移動度と
、速いキャリア再結合時間を利用して、光照射により発
生したキャリアを短時間に有効に電気信号として取り出
し、かつ光照射が終了した後は光キャリアがすみやかに
消失し得る事に基づき高速でかつ高感度な光電変換装置
を実現するものである。Function The present invention utilizes the high mobility and fast carrier recombination time of ■-V group compound semiconductors to effectively extract carriers generated by light irradiation as electrical signals in a short time, and to terminate the light irradiation. Based on the fact that the photocarriers can quickly disappear after this process, a high-speed and highly sensitive photoelectric conversion device can be realized.
実施例 本発明の構成と原理を実施例を用いて説明する。Example The configuration and principle of the present invention will be explained using examples.
第１図は、本実施例の密着型ラインセンサの基本構成を
示す。即ちＬＥＤなどの光源２から出た光が原稿３に当
たり、その反射光が集束性ファイバアレイなどの集光系
４を光導電膜５に照射される。FIG. 1 shows the basic configuration of the contact type line sensor of this embodiment. That is, light emitted from a light source 2 such as an LED hits the original 3, and the reflected light passes through a condensing system 4 such as a focusing fiber array and irradiates the photoconductive film 5.
ここで、１は透明な基板である。光導電膜上には向かい
合って一対の電極か６．７が形成されており、その電極
間にはバイアス電圧が印加されている。光照射により、
光導膜内に電子、正孔のキャリアが発生し、このキャリ
アが、バイアス電圧により、互いに逆方向の電極に向っ
て移動し、その結果光電流として検出される。Here, 1 is a transparent substrate. A pair of electrodes 6.7 are formed facing each other on the photoconductive film, and a bias voltage is applied between the electrodes. By light irradiation,
Electron and hole carriers are generated within the photoconductive film, and the bias voltage causes these carriers to move toward the electrodes in opposite directions, and as a result, they are detected as a photocurrent.
また第２図には、本発明の光電変換装置の概略表面を示
す。１は透明な基板であり、この基板上に、１６本／ｙ
ｔｒｙｓの密度で、複数の光導電膜６が電気的に分離さ
れて形成されている。この光導電膜の形成は通常のＭＯ
ＣＶＩｌ法で約５００ＯＡのＧａＡｓ膜を形成し、その
後、フォトリソグラフィにより、幅２Ｑμｍの微細パタ
ーンを形成する。Further, FIG. 2 shows a schematic surface of the photoelectric conversion device of the present invention. 1 is a transparent substrate, and 16 lines/y are placed on this substrate.
A plurality of photoconductive films 6 are formed so as to be electrically separated at a density of trys. The formation of this photoconductive film is carried out using ordinary MO
A GaAs film of about 500 OA is formed using the CVII method, and then a fine pattern with a width of 2 Q μm is formed using photolithography.
この時のエツチングには塩酸を用いた。その後対向電極
群６と、マトリクス電甑７をＡｕ−Ｇｏを用いて、フォ
トリソグラフィにより形成している。Hydrochloric acid was used for etching at this time. Thereafter, a counter electrode group 6 and a matrix electrode 7 are formed using Au--Go by photolithography.
対向電極とマトリクス電糎の電極間隔は２０μｍである
。The electrode spacing between the counter electrode and the matrix electrode was 20 μm.
導電膜として、■−■化合物半桿体であるＧａＡｓを用
いている点にみる。This is notable in that GaAs, which is a semi-rod compound of ■-■, is used as the conductive film.
各素子に１ｏｏ１ｘ、波長５６０ｎｍの光を照射した時
約１０μ人の電流が得られ、またその時の応答速度は約
２μｓであった。When each element was irradiated with light of 101x and a wavelength of 560 nm, a current of about 10 microns was obtained, and the response speed at that time was about 2 microseconds.
本発明は、従来、Ｃｄ５−ＣｄＳｅ固溶体を用いて同様
の構成の光導電素子を用いた場合に比較して、はぼ同様
の光電流が得られており、しかも、応答時間が著しく改
良されそいるっこれは、光導電流ＩｐがＩｐｏｃμτ
（μは光導電膜のモビリティ、τは、多数キャリア寿命
）で表わされ、ＧＩＬＡＳ膜のτがＣｄＳ −ＣｄＳｅ
固溶体に比較して、約３桁小さく高速化が実現されてい
るにもかかわらず、μが約３桁大きい事に起因している
ものであると考えられる。The present invention provides a photocurrent that is almost the same as that of a conventional photoconductive element using a Cd5-CdSe solid solution and a similar configuration, and the response time is significantly improved. This means that the photoconductive current Ip is Ipocμτ
(μ is the mobility of the photoconductive film, τ is the majority carrier lifetime), and τ of the GILAS film is CdS-CdSe
This is thought to be due to the fact that μ is about 3 orders of magnitude larger than that of a solid solution, even though the speed has been increased by about 3 orders of magnitude.
本実施例では、ガラス基板上にＭＯＣＶＤ法で、ＧａＡ
ｓ膜を形成した場合を示しだが、ガラス基板上にでも通
常のＭＯＣＶＤ法により、移動度が１０００ ｔｙｊ
／ Ｖ −Ｓｅｃ 以上のものが得られているや、結
晶性の基板を用いる等の方法或は歪超格子を形成する方
法等より、更に大きな移動度を実現する事が可能である
。また、混晶の組成比を制御する事により、吸収端の波
長を変化させる事も可能となり、組成の異なる素子を交
互に配しリする事によりカラー化への応用も容易となる
。In this example, GaA was deposited on a glass substrate using the MOCVD method.
This shows the case where a s film is formed, but even on a glass substrate, it is possible to achieve a mobility of 1000 tyj by the usual MOCVD method.
/V-Sec or higher, and it is possible to achieve even greater mobility than methods such as using a crystalline substrate or forming a strained superlattice. Furthermore, by controlling the composition ratio of the mixed crystal, it is possible to change the wavelength of the absorption edge, and by alternately arranging elements with different compositions, it is easy to apply it to coloring.
即ち、本実施例に適用できる■−■族化合物半導体とし
てはＧ２ＬｘＡｅｙＩｎｚＡＳｖＰｗ 系が考えられ
る。特に、ＧａＩｎＡｓやＩｎＰ に近い組成の半導体
は、高い移動度の有するために、高感度な光電変換装置
への応用が可能になり、ＡｅＧａＩｎＰやＡｅＧａＡｓ
に近い組成の半導体は、短波長光源を用いる光導変
換装置への応用が可能になる。That is, the G2LxAeyInzASvPw system can be considered as the ■-■ group compound semiconductor applicable to this embodiment. In particular, semiconductors with compositions close to GaInAs and InP have high mobility, making it possible to apply them to highly sensitive photoelectric conversion devices;
Semiconductors with compositions close to , can be applied to light guide conversion devices that use short wavelength light sources.
一方、膜の結晶性を良くして、高感度な光電変換装置を
実現するためには、ＧａＡｅＩｎＡｓＰ系の半導体で順
次又は交互に組成の異なる複数の薄膜を順次形成する事
により、基板との格子歪を緩和して、結晶性の優れた薄
膜結晶にすれば良い。またその時ｐ−ｎ接合を形成して
おけば、更に応答速度が改善されるとともに、光入力強
度と光電流のリニアリティーを向上させる事ができる。On the other hand, in order to improve the crystallinity of the film and realize a highly sensitive photoelectric conversion device, it is possible to form a plurality of thin films of GaAeInAsP-based semiconductors with different compositions in sequence or alternately to form a lattice with the substrate. The strain can be relaxed to form a thin film crystal with excellent crystallinity. Furthermore, if a pn junction is formed at that time, the response speed can be further improved, and the optical input intensity and the linearity of the photocurrent can be improved.
また、基板として、ＡＢＯ４型（ただし、ＡはＰｂ、
（ｄ、 Ｃａ、 Ｓｒ、 Ｂａの群より選択された１つ
、ＢはＴｉ、 Ｔａ、 Ｚｒ、 Ｆｅ、 Ｓｎ、 Ｇｅ
の群より選択された１つ）、又は、ＡＢＯ３ペロブ
スカイト型（ただし、ＡはＬｉ、 Ｋ、 Ｂａ、 Ｓｒ
、 Ｐｂ の群より選択された１つ、ＢはＮｂ、 Ｔ
ｉ、 Ｔａ、 Ｚｒ、 Ｆｅ。In addition, the substrate is ABO4 type (A is Pb,
(One selected from the group of d, Ca, Sr, Ba, B is Ti, Ta, Zr, Fe, Sn, Ge
) or ABO3 perovskite type (where A is Li, K, Ba, Sr
, Pb, B is Nb, T
i, Ta, Zr, Fe.
Ｓｎ、Ｇｅの群より選択された１つ）の結晶基板を用い
る事により、格子整合が可能となり前記、ＧａｘＡｅｙ
Ｉｎ２ＡｓｖＰｗ 系の半導体をエピタキンヤル成長
させる事が可能となり、高感度な光電変換装置が実現で
きる。By using a crystal substrate of one selected from the group of Sn and Ge, lattice matching becomes possible.
It becomes possible to epitaxially grow an In2AsvPw-based semiconductor, and a highly sensitive photoelectric conversion device can be realized.
また実施例では■−■化合物薄膜の作製にＭＯＣＶＤ法
を用いたが、ＭＢＥ法を用いる事も可能である。Further, in the examples, the MOCVD method was used to prepare the compound thin film, but it is also possible to use the MBE method.
発明の効果
以上のように、本発明によれば、従来のラインセンサの
欠点を克服した高速、高感度な光電変換装置が実現でき
、大きな効果を発揮できる。Effects of the Invention As described above, according to the present invention, a high-speed, high-sensitivity photoelectric conversion device that overcomes the drawbacks of conventional line sensors can be realized, and great effects can be achieved.
第１図は本発明の一実施例における光電変換装置の基本
構成を示す断面図、第２図は本実施例装置の要部平面図
である。
１・・・・透明基板、２・・・・・・光源、３・・・・
・・原稿、５・・・・・光導電膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
、ｕ’４ｔＬ
原楠
７マトソ７入電コｔFIG. 1 is a sectional view showing the basic configuration of a photoelectric conversion device according to an embodiment of the present invention, and FIG. 2 is a plan view of a main part of the device of this embodiment. 1...Transparent substrate, 2...Light source, 3...
...Manuscript, 5...Photoconductive film. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure, u'4tL Harakusu 7 Matoso 7 Incoming power t
Claims (7)
の光導電素子群と、それら各光導電素子上に形成された
対向電極と、各電極を結ぶマトリクス結線部とを備え、
原稿からの反射光が導光系を通して前記光導電素子に当
たるように構成されるとともに、前記光導電素子群がI
II−Ｖ族化合物半導体を主体として成る光電変換装置。(1) comprising a plurality of photoconductive element groups formed on an insulating substrate and lined up in the main scanning direction, counter electrodes formed on each of the photoconductive elements, and a matrix connection part connecting each electrode;
The configuration is such that reflected light from the document hits the photoconductive element through the light guide system, and the photoconductive element group is configured to
A photoelectric conversion device mainly composed of II-V group compound semiconductors.
ｎ＿ｚＡｓ＿ｖＰ＿ｗ系の半導体である特許請求の範囲
第１項記載の光導変換装置。(2) The III-V compound semiconductor is Ga_xAl_yI
The light guide conversion device according to claim 1, which is an n_zAs_vP_w semiconductor.
導体で、順次又は交互に組成の異なる複数の薄膜が順次
形成されてなる特許請求の範囲第２項記載の光電変換装
置。(3) The photoelectric conversion device according to claim 2, wherein a plurality of thin films of Ga_xAl_yIn_zAs_vP_w-based semiconductors having different compositions are successively or alternately formed.
導体で、ｐ−ｎ接合が形成されて、光導電素子群が形成
されている特許請求の範囲第２項記載の光電変換装置。(4) The photoelectric conversion device according to claim 2, wherein the photoconductive element group is formed by forming a pn junction using a Ga_xAl_yIn_zAs_vP_w semiconductor.
項記載の光電変換装置。(5) Claim 1 in which the insulating substrate is a glass substrate
The photoelectric conversion device described in .
ｄ、Ｃａ、Ｓｒ、Ｂａの群より選択された１つ、ＢはＭ
ｏ、Ｗの群より選択された１つ）の誘電体基板である特
許請求の範囲第１項記載の光電変換装置。(6) The insulating substrate is ABO_4 type (A is Pb, C
d, one selected from the group of Ca, Sr, Ba, B is M
2. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device is a dielectric substrate selected from the group consisting of: O and W.
し、ＡはＬｉ、Ｋ、Ｂａ、Ｓｒ、Ｐｂの群より選択され
た１つ、ＢはＮｂ、Ｔｉ、Ｔａ、Ｚｒ、Ｆｅ、Ｓｎ、Ｃ
ｅの群より選択された１つ）である特許請求の範囲第１
項に記載の光電変換装置。(7) The insulating substrate is an ABO_3 perovskite type (where A is one selected from the group of Li, K, Ba, Sr, and Pb, and B is Nb, Ti, Ta, Zr, Fe, Sn, and C
Claim 1 which is one selected from the group e)
The photoelectric conversion device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60291640A JPS62150767A (en) | 1985-12-24 | 1985-12-24 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60291640A JPS62150767A (en) | 1985-12-24 | 1985-12-24 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62150767A true JPS62150767A (en) | 1987-07-04 |
Family
ID=17771565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60291640A Pending JPS62150767A (en) | 1985-12-24 | 1985-12-24 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62150767A (en) |
-
1985
- 1985-12-24 JP JP60291640A patent/JPS62150767A/en active Pending
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