JPS6345468B2 - - Google Patents
Info
- Publication number
- JPS6345468B2 JPS6345468B2 JP13460486A JP13460486A JPS6345468B2 JP S6345468 B2 JPS6345468 B2 JP S6345468B2 JP 13460486 A JP13460486 A JP 13460486A JP 13460486 A JP13460486 A JP 13460486A JP S6345468 B2 JPS6345468 B2 JP S6345468B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- gas introduction
- reaction
- reactive ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 42
- 239000012495 reaction gas Substances 0.000 claims description 24
- 238000001020 plasma etching Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 9
- 239000000376 reactant Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13460486A JPS62290885A (ja) | 1986-06-10 | 1986-06-10 | 反応性イオンエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13460486A JPS62290885A (ja) | 1986-06-10 | 1986-06-10 | 反応性イオンエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62290885A JPS62290885A (ja) | 1987-12-17 |
| JPS6345468B2 true JPS6345468B2 (zh) | 1988-09-09 |
Family
ID=15132284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13460486A Granted JPS62290885A (ja) | 1986-06-10 | 1986-06-10 | 反応性イオンエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62290885A (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5292400A (en) * | 1992-03-23 | 1994-03-08 | Hughes Aircraft Company | Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching |
| GB9410567D0 (en) * | 1994-05-26 | 1994-07-13 | Philips Electronics Uk Ltd | Plasma treatment and apparatus in electronic device manufacture |
| US6939434B2 (en) | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
| JP4177192B2 (ja) | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置およびプラズマエッチング方法 |
| JP5074741B2 (ja) | 2006-11-10 | 2012-11-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
-
1986
- 1986-06-10 JP JP13460486A patent/JPS62290885A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62290885A (ja) | 1987-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |