JPS6344833Y2 - - Google Patents

Info

Publication number

JPS6344833Y2

JPS6344833Y2 JP5948483U JP5948483U JPS6344833Y2 JP S6344833 Y2 JPS6344833 Y2 JP S6344833Y2 JP 5948483 U JP5948483 U JP 5948483U JP 5948483 U JP5948483 U JP 5948483U JP S6344833 Y2 JPS6344833 Y2 JP S6344833Y2

Authority

JP

Japan

Prior art keywords

light intensity

exposure

static elimination

lamp

amorphous silicon

Prior art date

1983-04-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
• Global Dossier
• Discuss

• 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
• 230000003068 static effect Effects 0.000 claims description 15
• 230000008030 elimination Effects 0.000 claims description 13
• 238000003379 elimination reaction Methods 0.000 claims description 13
• 238000012546 transfer Methods 0.000 claims description 10
• 238000004140 cleaning Methods 0.000 claims description 4
• 239000000758 substrate Substances 0.000 claims description 3
• 238000011161 development Methods 0.000 claims description 2
• 230000003287 optical effect Effects 0.000 description 11
• 230000007423 decrease Effects 0.000 description 4
• 238000010586 diagram Methods 0.000 description 4
• 238000000034 method Methods 0.000 description 4
• 230000000694 effects Effects 0.000 description 2
• 229910052736 halogen Inorganic materials 0.000 description 2
• 150000002367 halogens Chemical class 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 108091008695 photoreceptors Proteins 0.000 description 2
• 238000000926 separation method Methods 0.000 description 2
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
• UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
• BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
• 230000004913 activation Effects 0.000 description 1
• 229910052796 boron Inorganic materials 0.000 description 1
• 238000000354 decomposition reaction Methods 0.000 description 1
• 239000007789 gas Substances 0.000 description 1
• CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
• 229910052739 hydrogen Inorganic materials 0.000 description 1
• 239000001257 hydrogen Substances 0.000 description 1
• 239000002184 metal Substances 0.000 description 1
• 230000000737 periodic effect Effects 0.000 description 1
• 229910052698 phosphorus Inorganic materials 0.000 description 1
• 239000011574 phosphorus Substances 0.000 description 1
• 230000000704 physical effect Effects 0.000 description 1
• 238000012545 processing Methods 0.000 description 1
• 238000011160 research Methods 0.000 description 1
• 229920006395 saturated elastomer Polymers 0.000 description 1
• 229910052711 selenium Inorganic materials 0.000 description 1
• 239000011669 selenium Substances 0.000 description 1
• 239000004065 semiconductor Substances 0.000 description 1
• 230000035945 sensitivity Effects 0.000 description 1
• 229910000077 silane Inorganic materials 0.000 description 1
• 230000000087 stabilizing effect Effects 0.000 description 1
• 230000001360 synchronised effect Effects 0.000 description 1