JPS6344307B2 - - Google Patents

Info

Publication number
JPS6344307B2
JPS6344307B2 JP54062001A JP6200179A JPS6344307B2 JP S6344307 B2 JPS6344307 B2 JP S6344307B2 JP 54062001 A JP54062001 A JP 54062001A JP 6200179 A JP6200179 A JP 6200179A JP S6344307 B2 JPS6344307 B2 JP S6344307B2
Authority
JP
Japan
Prior art keywords
gate electrode
mos
transistor
gate
stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54062001A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55153375A (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6200179A priority Critical patent/JPS55153375A/ja
Publication of JPS55153375A publication Critical patent/JPS55153375A/ja
Publication of JPS6344307B2 publication Critical patent/JPS6344307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP6200179A 1979-05-18 1979-05-18 Non-volatile semiconductor memory device Granted JPS55153375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6200179A JPS55153375A (en) 1979-05-18 1979-05-18 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6200179A JPS55153375A (en) 1979-05-18 1979-05-18 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55153375A JPS55153375A (en) 1980-11-29
JPS6344307B2 true JPS6344307B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-09-05

Family

ID=13187473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6200179A Granted JPS55153375A (en) 1979-05-18 1979-05-18 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55153375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0123249B1 (en) * 1983-04-18 1990-08-01 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating gate
US5066992A (en) * 1989-06-23 1991-11-19 Atmel Corporation Programmable and erasable MOS memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747515B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-09-30 1982-10-09
JPS5612956B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1975-09-01 1981-03-25

Also Published As

Publication number Publication date
JPS55153375A (en) 1980-11-29

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