JPS6341445B2 - - Google Patents

Info

Publication number
JPS6341445B2
JPS6341445B2 JP56013448A JP1344881A JPS6341445B2 JP S6341445 B2 JPS6341445 B2 JP S6341445B2 JP 56013448 A JP56013448 A JP 56013448A JP 1344881 A JP1344881 A JP 1344881A JP S6341445 B2 JPS6341445 B2 JP S6341445B2
Authority
JP
Japan
Prior art keywords
transistors
transistor
gain control
emitter
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56013448A
Other languages
Japanese (ja)
Other versions
JPS57127311A (en
Inventor
Mitsuo Ookawa
Hitoshi Sugano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1344881A priority Critical patent/JPS57127311A/en
Publication of JPS57127311A publication Critical patent/JPS57127311A/en
Publication of JPS6341445B2 publication Critical patent/JPS6341445B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
    • H03G1/0023Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers

Landscapes

  • Control Of Amplification And Gain Control (AREA)

Description

【発明の詳細な説明】 本発明は直流利得制御装置に関し、利得制御装
置の出力制御特性をB型可変抵抗を用いてA型あ
るいはC型の自由な出力制御特性とすることがで
きる直流利得制御装置を提供するもので、特に
IC(集積回路)化に適し、しかもカラーテレビジ
ヨン受像機の音声回路あるいはラジオ受信機、ス
テレオ装置等の音響機器の音量調整回路に好適な
直流利得制御装置を得るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a DC gain control device, and relates to a DC gain control device that allows the output control characteristics of the gain control device to be freely changed to A-type or C-type output control characteristics using a B-type variable resistor. equipment, especially
The present invention provides a DC gain control device suitable for use in IC (integrated circuit) and suitable for audio circuits of color television receivers or volume adjustment circuits of audio equipment such as radio receivers and stereo equipment.

第1図は、A型、B型ならびにC型ボリユーム
の特性曲線を示す図であり、横軸はボリユームの
回転角(移動量)、縦軸は抵抗値である。人間の
耳の指数関数的な非線形応答を補正するためオー
デイオ用増幅器には、B型のボリユーム(直線変
化型)は使われず、通常はA型のボリユーム(非
直線型)が使用される。
FIG. 1 is a diagram showing characteristic curves of type A, type B, and type C volumes, where the horizontal axis represents the rotation angle (travel amount) of the volume, and the vertical axis represents the resistance value. In order to compensate for the exponential nonlinear response of the human ear, a B-type volume (linear variation type) is not used in audio amplifiers, but an A-type volume (nonlinear type) is usually used.

第2図はかかるA型ボリユームとして市販され
ているものの特性を示す図である。
FIG. 2 is a diagram showing the characteristics of a commercially available type A volume.

ところでこのような非直線A型ボリユームは製
造上ばらつきやすく、したがつて、ばらつきの少
ない製品を作ることは難しい。したがつて製造上
作りやすい直線型ボリユームに較べてその特性の
ばらつきが大きく、且つ価格が割高となることは
避けられない。
By the way, such a non-linear A-type volume is prone to manufacturing variations, and therefore it is difficult to produce products with little variation. Therefore, it is inevitable that the characteristics will vary widely and the price will be higher than that of the linear volume, which is easier to manufacture.

この発明は上記の事情に鑑みなされたもので価
格が安く、しかも製造しやすいB型ボリユームを
使用してA型ボリユームあるいはC型ボリユーム
あるいは他の特性を得ることが可能な直流利得制
御装置を提供することを目的とする。
The present invention has been made in view of the above circumstances, and provides a DC gain control device that is inexpensive and capable of obtaining A-type volume, C-type volume, or other characteristics by using a B-type volume that is easy to manufacture. The purpose is to

以下、図面を参照して本発明の直流利得制御装
置について詳細に説明する。
Hereinafter, the DC gain control device of the present invention will be explained in detail with reference to the drawings.

第3図は本発明の一実施例にかかる直流利得制
御装置の回路構成を示す図である。図中、5(点
線内回路)は利得制御回路であり、2は入力信号
端子、Cはコンデンサ、3及び3′は出力信号端
子、4及び4′は利得制御端子である。前記利得
制御端子4,4′は第1,第2のエミツタフオロ
ワトランジスタQ8,Q7の各エミツタにそれぞれ
接続され、トランジスタQ7,Q8の各ベースは相
互に接続され、ベースバイアス源V1に接続され、
各コレクタはVcc電源に接続される。可変抵抗R16
の可動端子1は3組の差動増幅器を構成するトラ
ンジスタQ1,Q2及びQ3,Q4及びQ5,Q6のうち、
各一方のトランジスタQ2,Q4,Q6のベースを相
互に接続したものと接続する。可変抵抗R16の一
端は接地され、他端はVcc電源に接続する。
FIG. 3 is a diagram showing a circuit configuration of a DC gain control device according to an embodiment of the present invention. In the figure, 5 (circuit inside the dotted line) is a gain control circuit, 2 is an input signal terminal, C is a capacitor, 3 and 3' are output signal terminals, and 4 and 4' are gain control terminals. The gain control terminals 4 and 4' are connected to the emitters of the first and second emitter follower transistors Q 8 and Q 7 , respectively, and the bases of the transistors Q 7 and Q 8 are connected to each other, so that the base bias connected to source V 1 ,
Each collector is connected to the Vcc power supply. Variable resistance R 16
Of the transistors Q 1 , Q 2 and Q 3 , Q 4 and Q 5 , Q 6 configuring the three sets of differential amplifiers, the movable terminal 1 of
The bases of each one of the transistors Q 2 , Q 4 , and Q 6 are connected to each other. One end of the variable resistor R16 is grounded and the other end is connected to the Vcc power supply.

前記3組の差動増幅器の各他方のトランジスタ
Q1,Q3,Q5の各ベースはそれぞれ抵抗R1とR2
中点、抵抗R2とR3の中点、抵抗R3とR4の中点に
それぞれ接続する。また抵抗R1の他端はVcc電源
に接続し、抵抗R4の他端は接地する。前記トラ
ンジスタQ1,Q2の各エミツタはそれぞれ抵抗R5
R6を介して共通定電流源I1に接続する。前記トラ
ンジスタQ3,Q4の各エミツタはそれぞれ抵抗R7
R8を介して共通定電流源I2に接続する。前記トラ
ンジスタQ5,Q6のの各エミツタはそれぞれR9
R10を介して共通定電流源I3に接続する。
the other transistor of each of the three sets of differential amplifiers;
The bases of Q 1 , Q 3 , and Q 5 are connected to the midpoint of resistors R 1 and R 2 , the midpoint of resistors R 2 and R 3 , and the midpoint of resistors R 3 and R 4 , respectively. The other end of resistor R1 is connected to the Vcc power supply, and the other end of resistor R4 is grounded. The emitters of the transistors Q 1 and Q 2 are connected to resistors R 5 and R 5 , respectively.
Connect to common constant current source I 1 via R 6 . The emitters of the transistors Q 3 and Q 4 are connected to resistors R 7 and R 7 , respectively.
Connect to common constant current source I 2 via R 8 . The emitters of the transistors Q 5 and Q 6 are R 9 and R 9 , respectively.
Connect to the common constant current source I 3 via R 10 .

ところで前記抵抗1とR2の接続点電位をVa、抵
抗R2とR3の接続点電位をVb、抵抗R3とR4の接続
点電位をVcとし、可変抵抗R16の可動端子1の電
位をO〜Vccに変化させたとき、この可動端子1
の電位がVc電位の前後でトランジスタQ5,Q6
Q7,Q8、抵抗R9,R10、定電流源I3で構成される
回路部が動作状態となり出力制御特性(C特性)
が、また、Vb電位の前後でトランジスタQ3,Q4
Q7,Q8、抵抗R7,R8、定電流源I2で構成される
回路部が動作状態となり出力制御特性(B特性)
が、さらにVa電位の前後でトランジスタQ1,Q2
Q7,Q8、抵抗R5,R6、定電流源I1で構成される
回路部が動作状態となり出力制御特性(A特性)
が得られ、したがつて3つの異なる出力制御特性
を得るとができる。
By the way, the potential at the connection point between the resistors 1 and R 2 is Va, the potential at the connection point between the resistors R 2 and R 3 is V b , the potential at the connection point between the resistors R 3 and R 4 is V c , and the movable terminal of the variable resistor R 16 is When the potential of 1 is changed from O to V cc , this movable terminal 1
When the potential of transistors Q 5 , Q 6 ,
The circuit section consisting of Q 7 , Q 8 , resistors R 9 , R 10 , and constant current source I 3 becomes operational and output control characteristics (C characteristics)
However, transistors Q 3 , Q 4 ,
The circuit section consisting of Q 7 , Q 8 , resistors R 7 , R 8 , and constant current source I 2 becomes operational and output control characteristics (B characteristics)
However, before and after the V a potential, transistors Q 1 , Q 2 ,
The circuit section consisting of Q 7 , Q 8 , resistors R 5 , R 6 , and constant current source I 1 becomes operational and output control characteristics (A characteristics)
is obtained, and thus three different output control characteristics can be obtained.

なお、常に特定されるわけではないが、3組の
差動増幅器のエミツタ抵抗値は一般的にはR5
R6,R7=R8,R9=R10に選ばれる。
Although it is not always specified, the emitter resistance values of the three sets of differential amplifiers are generally R 5 =
R 6 , R 7 = R 8 , R 9 = R 10 are selected.

ところで、第3図で示す回路の構成要素である
トランジスタQ1,Q2,Q3,Q4,Q5,Q6,Q10
Q11,Q12,Q13の電流増幅率hFEが十分に大きく、
ベース電流が無視でき、第3図の回路で以下に示
す関係式が成立すると仮定する。
By the way, the transistors Q 1 , Q 2 , Q 3 , Q 4 , Q 5 , Q 6 , Q 10 , which are the constituent elements of the circuit shown in FIG.
The current amplification factor h FE of Q 11 , Q 12 , Q 13 is sufficiently large,
It is assumed that the base current is negligible and that the following relational expression holds true in the circuit of FIG.

I1=Ic1+Ic2 I2=Ic3+Ic4 I3=Ic5+Ic6 I1+I2+I3=IE7+IE8=Io ここでIc1……トランジスタQ1のコレクタ電流、
Ic2……トランジスタQ2のコレクタ電流、Ic3……
トランジスタQ3のコレクタ電流、Ic4……トラン
ジスタQ4のコレクタ電流、Ic5……トランジスタ
Q5のコレクタ電流、Ic6……トランジスタQ6のコ
レクタ電流、IE7……トランジスタQ7のエミツタ
電流、IE8……トランジスタQ8のエミツタ電流、 この下で例えば定電流源の電流I1,I2,I3の電
流比率をI1:I2:I3=5.5:3.5:1.0にしたときの
トランジスタのQ1〜Q6コレクタ電流Ic1〜Ic6は第
4図で示す図であり、この変化に基いてエミツタ
フオロワトランジスタQ7とQ8のエミツタ電流IE7
IE8は第5図で示すような電流変化特性を示す。
すなわち、可動端子1の電位をE1からE2に増大
させたとき差動増幅器を構成するトランジスタ
Q5,Q6のコレクタ電流Ic5,Ic6についてみると、
Ic5は減少し、Ic6は増加する。同様に可動端子1
の電位をE2からE3に増加させたとき差動増幅器
を構成するトランジスタQ3,Q4のコレクタ電流
Ic3,Ic4についてみるとIc3は減少し、Ic4は増加す
る。同様に可動端子1の電位をE3からE4に増大
させたとき差動増幅器を構成するトランジスタ
Q1,Q2のコレクタ電流Ic1,Ic2についてみると、
Ic1は減少し、Ic2は増加する。なおトランジスタ
Q5,Q6で構成される差動増幅器は可動端子1の
電位がVc(E1〜E2)の範囲でトランジスタQ5
Q6が各々完全に導通→非導通、非導通→導通の
動作を実行するように利得制御特性を持たせる。
I 1 = I c1 + I c2 I 2 = I c3 + I c4 I 3 = I c5 + I c6 I 1 + I 2 + I 3 = I E7 + I E8 = Io where I c1 ... collector current of transistor Q 1 ,
I c2 ... Collector current of transistor Q 2 , I c3 ...
Collector current of transistor Q 3 , I c4 ... Collector current of transistor Q 4 , I c5 ... transistor
Collector current of Q 5 , I c6 ... Collector current of transistor Q 6 , I E7 ... Emitter current of transistor Q 7 , I E8 ... Emitter current of transistor Q 8 Below, for example, the current of a constant current source I 1 , I 2 , and I 3 are set to I 1 :I 2 :I 3 =5.5:3.5:1.0, the collector currents I c1 to I c6 of the transistors are as shown in Fig. 4. Based on this change, the emitter current of emitter follower transistors Q7 and Q8 is I E7 ,
I E8 exhibits current change characteristics as shown in Figure 5.
In other words, when the potential of movable terminal 1 is increased from E 1 to E 2 , the transistor constituting the differential amplifier
Looking at the collector currents I c5 and I c6 of Q 5 and Q 6,
I c5 decreases and I c6 increases. Similarly, movable terminal 1
The collector current of transistors Q 3 and Q 4 forming the differential amplifier when the potential of is increased from E 2 to E 3
Looking at I c3 and I c4 , I c3 decreases and I c4 increases. Similarly, when the potential of movable terminal 1 is increased from E 3 to E 4 , the transistors forming the differential amplifier
Looking at the collector currents I c1 and I c2 of Q 1 and Q 2 ,
I c1 decreases and I c2 increases. Note that the transistor
The differential amplifier composed of Q 5 and Q 6 uses transistors Q 5 and Q 6 when the potential of movable terminal 1 is in the range of V c (E 1 to E 2 ).
Gain control characteristics are provided so that Q 6 performs completely conductive → non-conductive and non-conductive → conductive operations.

すなわち、トランジスタQ3,Q4およびトラン
ジスタQ1,Q2で構成される他の2組の差動増幅
器もそれぞれ可動端子1の電位がVB(E2〜E3),
VA(E3〜E4)の範囲でトランジスタQ3,Q4なら
びにQ1,Q2が各々完全に導通→非導通、非導通
するように利得制御特性を持たせる。上記のトラ
ンジスタQ1〜Q6の動作に基いてトランジスタQ7
Q8に流れる電流は第5図で示したように変化す
る。
That is, the potentials of the movable terminals 1 of the other two differential amplifiers composed of transistors Q 3 and Q 4 and transistors Q 1 and Q 2 are V B (E 2 to E 3 ), respectively.
A gain control characteristic is provided so that transistors Q 3 , Q 4 and Q 1 , Q 2 are completely turned on, then turned off, and then turned off in the range of V A (E 3 to E 4 ). Based on the operation of transistors Q 1 to Q 6 above, transistors Q 7 ,
The current flowing through Q8 changes as shown in Figure 5.

エミツタフオロワトランジスタQ7,Q8のエミ
ツタ電流IE7,IE8をこのように電流制御すること
により、ベースエミツタ間電圧VBEの差電圧を発
生させ、この差電圧を利得制御5の利得制御端子
4及び4′に導き、差動増幅器を構成するトラン
ジスタQ10,Q11,Q12,Q13を制御する。この制
御によつて端子3の出力特性は第5図で示したエ
ミツタ電流IE8の電流制御特性と等価なものとな
る。又端子3′より出力を取り出せば出力特性は
第5図で示したエミツタ電流IE7の電流制御特性
と等価なものとなる。
By controlling the emitter currents I E7 and I E8 of the emitter follower transistors Q 7 and Q 8 in this way, a voltage difference between the base and emitter voltage V BE is generated, and this voltage difference is used to control the gain of gain control 5. It is led to terminals 4 and 4' and controls transistors Q 10 , Q 11 , Q 12 , and Q 13 that constitute a differential amplifier. By this control, the output characteristics of the terminal 3 become equivalent to the current control characteristics of the emitter current IE8 shown in FIG. If the output is taken out from the terminal 3', the output characteristics will be equivalent to the current control characteristics of the emitter current I E7 shown in FIG.

第6図は基準バイアス電圧Va,Vb,Vcと各差
動増幅器の制御特性を変更したときのトランジス
タQ2,Q4,Q6のコレクタ電流の変化を示す図で
あり、このときのトランジスタQ7,Q8のエミツ
タ電流IE7,IE8の電流変化特性は第7図のように
なる。
FIG. 6 is a diagram showing changes in the collector currents of transistors Q 2 , Q 4 , and Q 6 when the reference bias voltages V a , V b , and V c and the control characteristics of each differential amplifier are changed. The current change characteristics of the emitter currents I E7 and I E8 of the transistors Q 7 and Q 8 are as shown in FIG.

第8図はB型ボリユームでA型あるいはC型に
近似した出力特性を得るようにした本発明の他の
実施例を示す図である。この直流利得制御装置で
は、トランジスタQ105,Q206で構成される差動増
幅器が付加されている点で第3図で示した回路と
構成を異にしている基本構成は同じである。な
お、第8図ではトランジスタQ16のダイオード接
続体と抵抗R17,R18,R19によつてベースバイア
ス源を構成し、抵抗R17とR18との接続点にトラ
ンジスタQ7とQ8のベースを接続している。また、
各差動増幅器の定電流源は、ベースがトランジス
タQ16のダイオード接続体と抵抗R18との接続点
に接続されたトランジスタQ17〜Q19,Q119,Q219
ならびにR20〜R22,R122,R222とで構成してい
る。さらに可動端子1とトランジスタQ2,Q4
Q6,Q106,Q216のベース共通接続点との間は直結
せず、NPNトランジスタQ20、抵抗R23,R24で形
成される第1ののエミツタフオロワ回路と、
PNPトランジスタQ21,抵抗R25,R26で形成され
る第2のエミツタフオロワ回路を介して結合し、
さらにエミツタフオロワトランジスタQ7,Q8
利得制御回路との間にもトランジスタQ22と抵抗
R27ならびにトランジスタQ23と抵抗R28で形成し
たエミツタフオロワ回路を設けている。
FIG. 8 is a diagram showing another embodiment of the present invention in which output characteristics similar to A type or C type are obtained using a B type volume. This DC gain control device has the same basic configuration as the circuit shown in FIG. 3 in that a differential amplifier composed of transistors Q 105 and Q 206 is added. In FIG. 8, a base bias source is constructed by the diode connection of transistor Q 16 and resistors R 17 , R 18 , and R 19 , and transistors Q 7 and Q 8 are connected to the connection point between resistors R 17 and R 18 . The base of the is connected. Also,
The constant current source of each differential amplifier consists of transistors Q 17 to Q 19 , Q 119 , Q 219 whose bases are connected to the connection point between the diode connection body of transistor Q 16 and resistor R 18
and R 20 to R 22 , R 122 , and R 222 . Furthermore, the movable terminal 1 and the transistors Q 2 , Q 4 ,
A first emitter follower circuit is not directly connected to the base common connection point of Q 6 , Q 106 , and Q 216 and is formed of an NPN transistor Q 20 and resistors R 23 and R 24 ;
coupled via a second emitter follower circuit formed by a PNP transistor Q 21 and resistors R 25 and R 26 ;
Furthermore, a transistor Q22 and a resistor are connected between the emitter follower transistors Q7 and Q8 and the gain control circuit.
An emitter follower circuit formed by R 27 , a transistor Q 23 and a resistor R 28 is provided.

このような回路構成の下で、各差動増幅器の制
御特性ならびに定電流源の電流比率を変更し、た
とえばトランジスタのコレクタ電流を第9図およ
び第10図に示したように変化させると、トラン
ジスタQ8のエミツタ電流IE8は第11図および第
12図で示すような電流変化特性が得られる。
Under such a circuit configuration, if the control characteristics of each differential amplifier and the current ratio of the constant current source are changed, for example, the collector current of the transistor is changed as shown in FIGS. 9 and 10, the transistor The emitter current I E8 of Q 8 has current change characteristics as shown in FIGS. 11 and 12.

このようにして得られる第11図の電流変化特
性は第1図で示したA型ボリユームの特性曲線
に、また、第12図の電流変化特性は第1図で示
したC型ボリユームの特性曲線に近似している。
なお、第9図、第10図では特性曲線が混みいる
ことをさけるため差動増幅器の各一方のトランジ
スタのコレクタ電流のみを示し、各他方のトラン
ジスタのコレクタ電流は省略している。
The current change characteristics obtained in this way in FIG. 11 correspond to the characteristic curve of the A-type volume shown in FIG. 1, and the current change characteristics in FIG. 12 correspond to the characteristic curve of the C-type volume shown in FIG. is approximated.
In addition, in FIGS. 9 and 10, in order to avoid crowding of the characteristic curves, only the collector current of each one transistor of the differential amplifier is shown, and the collector current of each other transistor is omitted.

以上説明したところから明らかなように、本発
明の利得制御装置は、B型ボリユーム(直線変化
型)の使用の下で利得制御装置の出力制御特性を
A型あるいはB型とすることのできる効果に加え
て、その回路を構成する回路要素が半導体集積回
路化に適したものであるため、これを半導体集積
回路化することが容易である効果も奏され、実用
的価値は極めて大きい。また、本発明の直流利得
制御装置はオーデイオ機器等の音量調整回路のみ
ならず、他の機器の利得制御に広く利用できる。
As is clear from the above explanation, the gain control device of the present invention has the effect of making the output control characteristic of the gain control device A type or B type when using a B type volume (linear variation type). In addition, since the circuit elements constituting the circuit are suitable for semiconductor integrated circuits, the present invention has the advantage of being easy to integrate into semiconductor integrated circuits, and has extremely great practical value. Further, the DC gain control device of the present invention can be widely used not only for volume control circuits of audio equipment, etc., but also for gain control of other equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はA型、B型およびC型ボリユームの回
転角又は移動量と抵抗値変化の関係を示す図、第
2図は市販されているA型ボリユームの特性を示
す図、第3図は本発明の一実施例にかかる直流利
得制御装置の回路図、第4図は第3図で示す回路
のトランジスタQ1〜Q6のコレクタ電流の制御電
圧変化に対する変化の関係を示す図、第5図はト
ランジスタQ7,Q8のエミツタ電流の電流変化特
性を示す図、第6図は基準バイアス電圧Va,Vb
Vcおよび差動増幅器の制御特性を変更したとき
のトランジスタQ2,Q4,Q6のコレクタ電流の変
化を示す図、第7図は第6図のコレクタ電流変化
の下でのトランジスタQ7,Q8のエミツタ電流変
化特性を示す図、第8図は本発明の他の実施例に
かかる直流利得制御装置の回路図、第9図,第1
0図は第8図の回路の差動増幅器の制御特性およ
び定電流源の電流比率を変更して得たトランジス
タのコレクタ電流変化を示す図、第11図および
第12図は第9図および第10図に対応するトラ
ンジスタ8のエミツタ電流変化特性を示す図であ
る。 1……可動端子、2……入力端子、3,3′…
…出力端子、4,4′……利得制御端子、5……
利得制御回路、Q1〜Q6,Q10〜Q13,Q105,Q106
Q205,Q206……差動増幅器構成用トランジスタ、
Q7,Q8,Q20〜Q23……エミツタフオロワトラン
ジスタ、Q14,Q15……信号入力用トランジスタ、
I1〜I3……電流源、Q16……トランジスタダイオ
ード接続体、Q17〜Q19,Q119,Q219……電流源用
トランジスタ、R16……可変抵抗、R1〜R15
R17,R17′,R19〜R28,R104,R204,R110,R209
R210,R122,R222……抵抗、C……コンデンサ。
Figure 1 is a diagram showing the relationship between rotation angle or movement amount and resistance change of A type, B type and C type volume, Figure 2 is a diagram showing the characteristics of commercially available A type volume, and Figure 3 is FIG . 4 is a circuit diagram of a DC gain control device according to an embodiment of the present invention; FIG. The figure shows the current change characteristics of the emitter currents of transistors Q 7 and Q 8. Figure 6 shows the reference bias voltages V a , V b ,
A diagram showing changes in the collector currents of transistors Q 2 , Q 4 , and Q 6 when V c and the control characteristics of the differential amplifier are changed . , FIG . 8 is a circuit diagram of a DC gain control device according to another embodiment of the present invention, and FIG.
Figure 0 is a diagram showing changes in the collector current of the transistor obtained by changing the control characteristics of the differential amplifier and the current ratio of the constant current source in the circuit of Figure 8, and Figures 11 and 12 are the diagrams shown in Figures 9 and 12. 10 is a diagram showing emitter current change characteristics of transistor 8 corresponding to FIG. 10. FIG. 1...Movable terminal, 2...Input terminal, 3, 3'...
...Output terminal, 4, 4'...Gain control terminal, 5...
Gain control circuit, Q1 to Q6 , Q10 to Q13 , Q105 , Q106 ,
Q 205 , Q 206 ... Differential amplifier configuration transistors,
Q 7 , Q 8 , Q 20 ~ Q 23 ... Emitter follower transistor, Q 14 , Q 15 ... Signal input transistor,
I1 to I3 ...Current source, Q16 ...Transistor diode connection body, Q17 to Q19 , Q119 , Q219 ...Transistor for current source, R16 ...Variable resistor, R1 to R15 ,
R 17 , R 17 ′, R 19 ~ R 28 , R 104 , R 204 , R 110 , R 209 ,
R210 , R122 , R222 ...Resistor, C...Capacitor.

Claims (1)

【特許請求の範囲】[Claims] 1 利得が相異り、エミツタ回路に各別に定電流
源が接続されたトランジスタ差動増幅器を少くと
も3個有し、これらの差動増幅器を構成する各一
方のトランジスタのベースを共通接続して直流制
御電圧入力端子となし、各他方のトランジスタの
ベースをそれぞれ異る基準バイアス発生点へ接続
し、各一方のトランジスタのコレクタを共通接続
し、さらに各他方のトランジスタのコレクタを共
通接続するとともに、それぞれコレクタが電源電
圧端子へ接続されベースが所定のベースバイアス
源へ接続された第1および第2のエミツタフオロ
ワトランジスタの各エミツタを前記各一方および
各他方のトランジスタのコレクタ共通接続点へ各
別に接続し、第1および第2のエミツタフオロワ
トランジスタのエミツタを制御電圧出力点とな
し、同制御電圧出力点を差動増幅器よりなる電流
分配形利得制御回路の利得制御端子へ接続してな
る直流利得制御装置。
1. It has at least three transistor differential amplifiers with different gains and each has a constant current source connected to its emitter circuit, and the bases of each of the transistors constituting these differential amplifiers are commonly connected. As a DC control voltage input terminal, the bases of each other transistor are connected to different reference bias generation points, the collectors of each one transistor are connected in common, and the collectors of each other transistor are connected in common, The respective emitters of first and second emitter follower transistors, each having a collector connected to a power supply voltage terminal and a base connected to a predetermined base bias source, are connected to a common connection point between the collectors of each of the one and the other transistors. The emitters of the first and second emitter follower transistors are connected separately, and the emitters of the first and second emitter follower transistors are used as control voltage output points, and the control voltage output points are connected to gain control terminals of a current distribution type gain control circuit consisting of a differential amplifier. DC gain control device.
JP1344881A 1981-01-30 1981-01-30 Direct current gain controller Granted JPS57127311A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1344881A JPS57127311A (en) 1981-01-30 1981-01-30 Direct current gain controller

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1344881A JPS57127311A (en) 1981-01-30 1981-01-30 Direct current gain controller

Publications (2)

Publication Number Publication Date
JPS57127311A JPS57127311A (en) 1982-08-07
JPS6341445B2 true JPS6341445B2 (en) 1988-08-17

Family

ID=11833412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1344881A Granted JPS57127311A (en) 1981-01-30 1981-01-30 Direct current gain controller

Country Status (1)

Country Link
JP (1) JPS57127311A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1103878C (en) * 1997-09-16 2003-03-26 Skf工程研究中心公司 Coated rolling element bearing
CN1329493C (en) * 2003-05-27 2007-08-01 日产自动车株式会社 Rolling element

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208717A (en) * 1981-06-18 1982-12-21 Pioneer Electronic Corp Control circuit for voltage control variable attenuator
JPS58222607A (en) * 1982-06-21 1983-12-24 Nec Corp Gain control circuit
JPH0666613B2 (en) * 1987-06-11 1994-08-24 ロ−ム株式会社 Electronic volume circuit
JP2781850B2 (en) * 1988-08-06 1998-07-30 三菱電機株式会社 Variable gain amplifier circuit
JP2000232328A (en) 1999-02-09 2000-08-22 Nec Ic Microcomput Syst Ltd Gain control circuit for variable gain amplifier
KR100714616B1 (en) 2005-06-23 2007-05-07 삼성전기주식회사 Exponential function generator and variable gain amplifier using the same
JP4765521B2 (en) * 2005-09-30 2011-09-07 株式会社日立製作所 Variable gain amplifier

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228888A (en) * 1985-07-31 1987-02-06 Fuji Electric Co Ltd Method for discriminating object

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6228888A (en) * 1985-07-31 1987-02-06 Fuji Electric Co Ltd Method for discriminating object

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1103878C (en) * 1997-09-16 2003-03-26 Skf工程研究中心公司 Coated rolling element bearing
CN1329493C (en) * 2003-05-27 2007-08-01 日产自动车株式会社 Rolling element

Also Published As

Publication number Publication date
JPS57127311A (en) 1982-08-07

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