JPS6341212B2 - - Google Patents

Info

Publication number
JPS6341212B2
JPS6341212B2 JP56092451A JP9245181A JPS6341212B2 JP S6341212 B2 JPS6341212 B2 JP S6341212B2 JP 56092451 A JP56092451 A JP 56092451A JP 9245181 A JP9245181 A JP 9245181A JP S6341212 B2 JPS6341212 B2 JP S6341212B2
Authority
JP
Japan
Prior art keywords
substrate
annealing
light irradiation
irradiation
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56092451A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57207345A (en
Inventor
Takashi Yahano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56092451A priority Critical patent/JPS57207345A/ja
Publication of JPS57207345A publication Critical patent/JPS57207345A/ja
Publication of JPS6341212B2 publication Critical patent/JPS6341212B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

Landscapes

  • Recrystallisation Techniques (AREA)
  • Furnace Details (AREA)
JP56092451A 1981-06-16 1981-06-16 Light irradiation annealing device Granted JPS57207345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092451A JPS57207345A (en) 1981-06-16 1981-06-16 Light irradiation annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092451A JPS57207345A (en) 1981-06-16 1981-06-16 Light irradiation annealing device

Publications (2)

Publication Number Publication Date
JPS57207345A JPS57207345A (en) 1982-12-20
JPS6341212B2 true JPS6341212B2 (enExample) 1988-08-16

Family

ID=14054760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092451A Granted JPS57207345A (en) 1981-06-16 1981-06-16 Light irradiation annealing device

Country Status (1)

Country Link
JP (1) JPS57207345A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141298A (ja) * 2000-11-02 2002-05-17 Toshiba Corp 半導体装置の製造方法
JP2007274007A (ja) * 2007-06-18 2007-10-18 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57207345A (en) 1982-12-20

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