JPS6340756A - Indium oxide sintered body for tin-containing physical vapor deposition - Google Patents
Indium oxide sintered body for tin-containing physical vapor depositionInfo
- Publication number
- JPS6340756A JPS6340756A JP61184207A JP18420786A JPS6340756A JP S6340756 A JPS6340756 A JP S6340756A JP 61184207 A JP61184207 A JP 61184207A JP 18420786 A JP18420786 A JP 18420786A JP S6340756 A JPS6340756 A JP S6340756A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- tin
- indium oxide
- sintered body
- ito
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 title claims description 30
- 229910003437 indium oxide Inorganic materials 0.000 title claims description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims description 9
- 238000005240 physical vapour deposition Methods 0.000 title claims description 8
- 239000000843 powder Substances 0.000 claims description 30
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 15
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、真空蒸着用ＩＴＯタブレットやスパッタリン
グ用ＩＴＯターゲットなどとして使用される錫を含む物
理蒸着用酸化インジウム焼結体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a tin-containing indium oxide sintered body for physical vapor deposition, which is used as an ITO tablet for vacuum vapor deposition, an ITO target for sputtering, and the like.
［従来の技術］
従来から錫を含む酸化インジウム焼結体（以下ＩＴＯ焼
結体と略す）を用いて、電子ビーム加熱蒸着法、スパッ
タリング法などの物理蒸着法により錫を含む酸化インジ
ウム膜（以下ＩＴＯ膜と略す）を形成することが試みら
れており、高温に加熱した基板上に条件を選んで蒸着す
れば、比抵抗２．３Ｘ １０−４ΩＣ１程度のＩＴＯ膜
が得られることは知られている。[Prior Art] Conventionally, an indium oxide film containing tin (hereinafter referred to as ITO sintered body) has been produced using a physical vapor deposition method such as an electron beam heating evaporation method or a sputtering method using an indium oxide sintered body containing tin (hereinafter referred to as an ITO sintered body). It is known that an ITO film with a resistivity of about 2.3 x 10-4 ΩC1 can be obtained by selectively depositing the film on a substrate heated to a high temperature. There is.
一般に、このＩＴＯ焼結体の形成方法としては、種々の
方法が知られているが、基本的には、酸化インジウム（
１１１２０３）粉体と酸化錫（ＳｉＯ２）粉体を適当な
量だけ混合し、成型し、次いでこれを仮焼成して粉砕し
、再び粉末とした後、もう−変成型焼結するという方法
がとられてきた。しかし、従来よりも、比抵抗の小さい
錫を含む酸化インジウム膜（以下ＩＴＯ膜と略す）、例
えば２ Ｘ １０−４Ωｃｍ以下の比抵抗を持つＩＴＯ
膜を得るという目的には、酸化状態の制御という点で、
これまでのような物理蒸着用のＩＴＯ焼結体では不十分
であった。Generally, various methods are known for forming this ITO sintered body, but basically, indium oxide (
111203) Powder and tin oxide (SiO2) powder are mixed in appropriate amounts, molded, then calcined and pulverized, made into powder again, and then subjected to metamorphic sintering. I've been exposed to it. However, indium oxide films containing tin (hereinafter abbreviated as ITO films) with a smaller specific resistance than conventional ones, such as ITO with a specific resistance of 2 x 10-4 Ωcm or less, have been developed.
The purpose of obtaining a film is to control the oxidation state.
The conventional ITO sintered body for physical vapor deposition was insufficient.
［発明の解決しようとする問題点］
、 本発明の目的は、従来の物理蒸着用のＩＴＯ焼結体
が有していた欠点を解消し、これまで得られている比抵
抗２ Ｘ １０−”ΩｃｍのＩＴＯ膜の特性を大幅に上
回る低抵抗のＩＴＯ膜を得ることかできる物理蒸着用の
ＩＴＯ焼結体を提供しようとするものである。従来の物
理蒸着用のＩＴＯ焼結体、特に真空薄着用タブレットや
スパッタリング用ターゲットの問題点は、Ｉｎ２Ｏ３粉
体と５ｎ０２粉体を出発原料としているところにあり、
すなわち基板上への錫を含む酸化インジウム（以下ＩＴ
Ｏと略す）の形成、とりわけＩｎ２０３の形成は、電子
ビーム加熱あるいは、スパッタリングにより原料中の１
１１２０３が還元分解し、それが基板上に達し雰囲気中
の酸素によって再び酸化され、ＩＴＯ膜となる過程をと
る。[Problems to be Solved by the Invention] The purpose of the present invention is to eliminate the drawbacks of conventional ITO sintered bodies for physical vapor deposition, and to improve the resistivity of 2×10−” which has been obtained so far. The purpose of the present invention is to provide an ITO sintered body for physical vapor deposition that can obtain a low resistance ITO film that significantly exceeds the characteristics of an ITO film of Ωcm. The problem with thinly worn tablets and sputtering targets is that they use In2O3 powder and 5n02 powder as starting materials.
In other words, indium oxide containing tin (hereinafter IT) is deposited on the substrate.
Formation of In203 (abbreviated as O), especially In203, is carried out by electron beam heating or sputtering.
11203 undergoes reductive decomposition, reaches the substrate, is oxidized again by oxygen in the atmosphere, and becomes an ITO film.
したがって、ＩＴＯ膜の特性は、電子ビーム加熱あるい
は、スパッタリングによる還元作用と雰囲気ガスの酸素
分圧、蒸着速度に強く依存する。しかし、これだけでは
Ｉｎ２Ｏ３の還元は十分でない上に、環元作用と蒸着速
度とは、独立に制御できないために酸素空孔によるキャ
リア濃度の増大は期待するほど増大できないという欠点
がある。Therefore, the characteristics of the ITO film strongly depend on the reduction effect by electron beam heating or sputtering, the oxygen partial pressure of the atmospheric gas, and the deposition rate. However, this method alone is not sufficient to reduce In2O3, and furthermore, the reduction of In2O3 is not sufficient, and since the ring element action and the deposition rate cannot be controlled independently, there is a drawback that the carrier concentration due to oxygen vacancies cannot be increased as much as expected.
［問題点を解決するための手段］
本発明は、前述の問題点を解決すべくなされたものであ
り、酸化インジウム（Ｉｎ２０３）の高温下における還
元処理によって形成されたインジウム低級酸化物（Ｉｎ
Ｏｘ ；０．５（Ｘ（１，５）の粉体と酸化錫の粉体を
適当な量だけ均一に混合し、高密度に焼結させた物理蒸
着用の酸化インジウム焼結体、とりわけ真空蒸着用ＩＴ
Ｏタブレットやスパッタリング用ＩＴＯターゲットを提
供するものである。[Means for Solving the Problems] The present invention has been made to solve the above-mentioned problems.
Indium oxide sintered body for physical vapor deposition, especially in vacuum IT for vapor deposition
The company provides O tablets and ITO targets for sputtering.
本発明において高温下における還元処理によってインジ
ウム低級酸化物を製造する具体的な方法としては、酸化
インジウム（Ｉｎ２０３）を高温の真空中、Ｈ２、Ｈ２
＋Ａｒ、あるいはＨ２＋ Ｎ２混合ガス中などの還元雰
囲気中で処理する方法や、又は、還元作用を付与するた
めのＩｎ金属粉と酸化インジウム（Ｉｎ２０３）を適当
量混合し、高温で焼成する方法などが採用される。かか
る高温処理の温度としては１０００℃〜１５００℃程度
が好ましい０本発明のＩＴＯ焼結体を製造するに当って
は、この様にして得られた酸化度の低いインジウム酸化
物（ＩｎＯｘ；０．５＜ｘ弓、５）の粉体と酸化錫（Ｓ
ｎＯ７）の粉体とを目的に応じた組成で均一に混合した
のち、成型焼結するインジウム低級酸化物の粉末と酸化
錫（ＳｎＯ２）の粉体との混合割合は、重量比で９８：
２〜８０：２０が適当である。さらに必要であれば、高
密度の焼結体を得るために再び粉砕し、粉末とした後、
もう一度所定のダレット形状；あるいはターゲット形状
に成型し、焼結するという工程を加えると、蒸着、ある
いはスパッタリングの工程の安定化という点で好ましい
。このようにして、形成された高密度ＩＴＯ焼結体は、
より酸化度の低いインジウム酸化物と少量の酸化錫（Ｓ
ｎＯ２）とから成っているが、蒸着の高速度化、ＩＴＯ
膜の高透明化、あるいは低抵抗化等の種々の目的に応じ
て、焼結体の製造条件を設定し、インジウム酸化物の酸
化度を制御することも可能である。In the present invention, as a specific method for producing indium lower oxide by reduction treatment at high temperature, indium oxide (In203) is heated in vacuum at high temperature, H2, H2
A method of processing in a reducing atmosphere such as +Ar or H2+N2 mixed gas, or a method of mixing an appropriate amount of In metal powder and indium oxide (In203) to impart a reducing effect and firing at a high temperature. Adopted. The temperature of such high-temperature treatment is preferably about 1000° C. to 1500° C. In producing the ITO sintered body of the present invention, indium oxide (InOx; 5<x bow, 5) powder and tin oxide (S
After uniformly mixing the powder of indium lower oxide (nO7) with a composition according to the purpose, the mixing ratio of the powder of indium lower oxide and the powder of tin oxide (SnO2) to be molded and sintered is 98:
A ratio of 2 to 80:20 is appropriate. If necessary, the powder is crushed again to obtain a high-density sintered body.
It is preferable from the viewpoint of stabilizing the vapor deposition or sputtering process to add a step of forming the material into a predetermined dalet shape or target shape and sintering it again. The high-density ITO sintered body thus formed is
Indium oxide with a lower oxidation degree and a small amount of tin oxide (S
nO2), but due to the high deposition rate, ITO
It is also possible to set the manufacturing conditions of the sintered body and control the degree of oxidation of the indium oxide depending on various purposes such as increasing the transparency of the film or lowering the resistance.
［作用］
従来の製法で製造されたＩＴＯ焼結体は出発原料がＩｎ
２Ｏ３、５ｎ０２とともに酸化度の高い粉体であるため
に、若干のインジウム低級酸化物あるいは、若干の錫低
級酸化物が含まれているものの、そのほとんどがＩｎ２
Ｏ３と少量の５ｎａ２から成っている。したがって、Ｉ
ＴＯ膜中に酸素空孔を増すための酸化インジウムの分解
は、電子ビーム加熱あるいはスパッタリングのみに依存
しているが、これのみでは、十分とはいえない。[Function] The ITO sintered body manufactured by the conventional manufacturing method has a starting material of In
Since it is a highly oxidized powder along with 2O3 and 5n02, it contains some indium lower oxide or some tin lower oxide, but most of it is In2.
It consists of O3 and a small amount of 5na2. Therefore, I
Decomposition of indium oxide to increase oxygen vacancies in the TO film relies only on electron beam heating or sputtering, but this alone is not sufficient.
そこで本発明においては、出発原料にインジウム低級酸
化物（ＩｎＯｘ；０．５（ｘ（１，５）の粉体と少量の
酸化錫（ＳｎＯ２ ）の粉体を用いることにより、原料
となるＩＴＯ焼結体中のインジウム酸化物は、かなり還
元状態にあると考えられる。また、成膜時においては、
電子ビーム加熱、あるいはスパッタリングによって一層
還元分解反応が進む。このような状態で蒸発粒子は基板
に到達し、雰囲気中の酸素と反応しながら、基板上を動
きまわり、適当な位置に停止し、ＩＴＯ膜を形成すると
考えられる。この際に、本発明においては、原料自体が
十分に還元状態にあるため還元作用と蒸発速度とは、は
とんど独立に制御でき、蒸着速度、雰囲気ガス中の酸素
分圧条件の設定によって、従来以上に広い範囲でＩＴＯ
膜中の酸素空孔の数を制御でき、しいては、キャリア濃
度の増大が実現できる。また、蒸発粒子が基板上で動き
回る際には、従来に比べ低級酸化状態であるがために、
より動き易く、結晶成長がより進み易くなり、結品粒の
増大、移動度の増大が実現できると考えられる。Therefore, in the present invention, by using a powder of indium lower oxide (InOx; 0.5 (x (1, 5)) and a small amount of tin oxide (SnO2) powder as starting materials, the ITO sintering The indium oxide in the aggregate is considered to be in a highly reduced state.Also, during film formation,
The reductive decomposition reaction progresses further by electron beam heating or sputtering. It is thought that the evaporated particles reach the substrate in this state, move around on the substrate while reacting with oxygen in the atmosphere, stop at an appropriate position, and form an ITO film. At this time, in the present invention, since the raw material itself is in a sufficiently reduced state, the reduction action and the evaporation rate can be controlled almost independently, and can be controlled by setting the evaporation rate and oxygen partial pressure conditions in the atmospheric gas. , ITO in a wider range than before
The number of oxygen vacancies in the film can be controlled, and thus the carrier concentration can be increased. In addition, when the evaporated particles move around on the substrate, they are in a lower oxidation state than before.
It is thought that it is easier to move, crystal growth progresses more easily, and an increase in the number of crystal grains and an increase in mobility can be realized.
［実施例コ
実施例１
金属体と酸化インジウム（Ｉｎ２０３）粉体とをＩｎ：
０＝＝１ ： １にするように混合し、真空中１３００
℃で高温処理し、インジウム低級酸化物（ＩｎＯｘ ；
！＝１．２）の粉体を作り、これに酸化錫（Ｓｌ２Ｏ３
）の粉体を組成比？、５ｗｔ％で均一に混合したのち、
成型し、次いで仮焼成を行なった。さらにこれを粉砕し
て粉体状にし、これを２５ｍｍＸ ＬｏＩの大きさの真
空蒸石川タブレット形状に成型し、次いで真空中１３０
０℃で高温焼結させた。このようにして得られたタブレ
ットは、緻密で青味がかった黒灰色を呈した。これらの
タブレットを蒸発原料として電子ビーム加熱蒸着法によ
り、３５０℃に加熱したガラス基板上にＩＴＯ膜を形成
したところ、蒸着速度、酸素分圧を最適値に制御するこ
とによって、比抵抗が１．２〜１．３×１０−４ΩＣ墓
のＩＴＯ膜が得られた。[Example 1 Example 1 Metal body and indium oxide (In203) powder were mixed with In:
Mix so that 0 = = 1 : 1, and 1300 ml in vacuum.
After high temperature treatment at ℃, indium lower oxide (InOx;
! = 1.2), and add tin oxide (Sl2O3) to this powder.
) powder composition ratio? , after uniformly mixing at 5 wt%,
It was molded and then pre-fired. This was further crushed into a powder, which was molded into a vacuum steamed Ishikawa tablet shape with a size of 25 mm x LoI, and then heated in a vacuum for 130 mm.
High temperature sintering was performed at 0°C. The tablets thus obtained were dense and had a bluish black-gray color. When an ITO film was formed on a glass substrate heated to 350° C. using these tablets as evaporation raw materials by electron beam heating evaporation, the specific resistance was 1.5% by controlling the evaporation rate and oxygen partial pressure to optimal values. An ITO film of 2 to 1.3×10 −4 ΩC was obtained.
実施例２
Ｉｎ金属粉と酸化インジウム（Ｉｎ２０＋）をＩｎ：０
−１＝１になるように混合し真空中１３００℃で高温処
理し、インジウム低級酸化物（ＩｎＯｘ；ｘ＝１．２）
の粉体を作り、これに酸化錫（ＳｎＯ２）の粉体を組成
比？、５ｗｔ％で均一に混合したのち、成型、仮焼成を
行なった。さらにこれを粉砕して再び粉体状にし、これ
を６インチφ×１０１１Ｉ１１の大きさに成型し、真空
中１３００℃高温焼結させた。Example 2 In:0 In metal powder and indium oxide (In20+)
-1 = 1 and treated in vacuum at high temperature at 1300°C to form indium lower oxide (InOx; x = 1.2)
Make a powder of , and add tin oxide (SnO2) powder to it at a composition ratio of ? , 5 wt%, and then molded and pre-fired. Further, this was crushed to form a powder again, which was molded into a size of 6 inches φ x 1011I11, and sintered at a high temperature of 1300° C. in vacuum.
このようにして得られたスパッタリング用ターゲットは
ｗＩ雀で青味がかった黒灰色を呈した。このターゲット
を出発原料としてスパッタリングにより、 ３５０℃に
加熱したガラス基板上に形成したところ、成膜速度、酸
素分圧を最適値に制御することによって、比抵抗が、１
．２〜１．３ Ｘ １０−４ΩｃｍのＩＴＯ膜が得ら
れた。The sputtering target thus obtained exhibited a bluish black-gray color. When this target was used as a starting material to form a film on a glass substrate heated to 350°C by sputtering, by controlling the film formation rate and oxygen partial pressure to optimal values, the specific resistance was reduced to 1.
．． An ITO film of 2-1.3 x 10-4 Ωcm was obtained.
比較例１
酸化インジウム（１１１２０３）粉体と酸化錫（ＳｎＯ
２）粉体とを酸化錫の組成比が７．５ｗｔ％となる様に
均一に混合した後、成型し次いで仮焼成を行なった。さ
らに、これを粉砕して粉体状にし、これを２５＋ｍＸ
１０■の大きさのタブレット形状に成型し、次いで大気
中８００℃で焼結させた。この様にして得られたタブレ
ットを蒸発原料として電子ビーム加熱蒸着法により ３
５０℃に加熱したガラス基板上に実施例１と同様な条件
でＩＴＯ膜を形成したところ、実施例１により得られた
ＩＴＯ膜より比抵抗の高い３．ＯＸ １０−４ΩＣ１ｌ
のＩＴＯ膜が得られた。Comparative Example 1 Indium oxide (111203) powder and tin oxide (SnO
2) The powder was uniformly mixed so that the composition ratio of tin oxide was 7.5 wt %, and then molded and then pre-fired. Furthermore, this is crushed into powder, and this is 25+mX
It was molded into a tablet shape with a size of 10 cm, and then sintered in the air at 800°C. The tablet thus obtained was used as a raw material for evaporation by electron beam heating evaporation method.
When an ITO film was formed on a glass substrate heated to 50° C. under the same conditions as in Example 1, the resistivity was higher than that of the ITO film obtained in Example 1. OX 10-4ΩC1l
An ITO film was obtained.
比較例２
酸化インジウム（ｌ１１２０３ ）粉体と酸化錫（Ｓｎ
Ｏ２）粉体とを酸化錫の組成比が７．５ｗｔ％となる様
に均一に混合した後、成型し、次い〒仮焼成を行なった
。さらに、これを粉砕して粉体状にし、これを６インチ
φＸ ＬｏＩｌｍの大きさのターゲット形状に成型し、
次いで大気中８００℃で焼結させた。この様にして得ら
れたターゲットを出発原料としてスパッタリング法によ
り ３５０℃に加熱したガラス基板上に実施例２と同様
な条件でＩＴＯ膜を形成したところ、実施例２により得
られたＩＴＯ膜より比抵抗の高い２．５Ｘ１０−’Ωｃ
ｍのＩＴＯ膜が得られた。Comparative Example 2 Indium oxide (l11203) powder and tin oxide (Sn
O2) powder was mixed uniformly so that the composition ratio of tin oxide was 7.5 wt%, and then molded and then pre-calcined. Furthermore, this is crushed into a powder form, which is molded into a target shape with a size of 6 inches φX LoIlm,
Then, it was sintered at 800°C in the air. Using the target thus obtained as a starting material, an ITO film was formed on a glass substrate heated to 350°C by sputtering under the same conditions as in Example 2. High resistance 2.5X10-'Ωc
An ITO film of m was obtained.
［発明の効果］
本発明は、前述したように、酸素空孔によるキャリア濃
度の増加、移動度の増大により、ＩＴＯ膜の低抵抗化と
いう優れた効果を有し、特にＩＴＯの還元作用と蒸発速
度とは、はとんど独立に制御できるために、蒸着速度、
雰囲気ガス中の酸素分圧、さらに原料の製作条件を低抵
抗化、高透明化、蒸発速度の高速化等の目的に応じて設
定することによって、従来以上に広い範囲でＩ Ｔ Ｏ
Ｉ＋！；！の特性を変化させることが可能となるという
効果もある。[Effects of the Invention] As described above, the present invention has an excellent effect of lowering the resistance of an ITO film by increasing the carrier concentration and mobility due to oxygen vacancies, and particularly reduces the reduction effect and evaporation of ITO. Deposition rate, because it can be controlled independently,
By setting the oxygen partial pressure in the atmosphere gas and the manufacturing conditions of the raw materials according to the objectives such as lower resistance, higher transparency, and faster evaporation rate, ITO can be used in a wider range than before.
I+! ;! It also has the effect of making it possible to change the characteristics of.
Claims (1)
ける還元処理によって形成されたインジウム低 級酸化物（ＩｎＯ＿ｘ：０．５＜ｘ＜１．５）の粉体と
酸化錫（ＳｎＯ＿２）の粉体とを均一に混合し、高密度
に焼結させてなる錫を含む物理蒸着用酸化インジウム焼
結体。(1) Powder of indium lower oxide (InO_x: 0.5<x<1.5) formed by reduction treatment of indium oxide (In_2O_3) at high temperature and powder of tin oxide (SnO_2) are uniformly mixed. An indium oxide sintered body for physical vapor deposition containing tin, which is mixed with tin and sintered to a high density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61184207A JPS6340756A (en) | 1986-08-07 | 1986-08-07 | Indium oxide sintered body for tin-containing physical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61184207A JPS6340756A (en) | 1986-08-07 | 1986-08-07 | Indium oxide sintered body for tin-containing physical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6340756A true JPS6340756A (en) | 1988-02-22 |
Family
ID=16149232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61184207A Pending JPS6340756A (en) | 1986-08-07 | 1986-08-07 | Indium oxide sintered body for tin-containing physical vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6340756A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290550A (en) * | 1988-05-16 | 1989-11-22 | Tosoh Corp | Production of target for sputtering to be used for production of transparent electro-conductive film |
| JPH0344464A (en) * | 1989-07-13 | 1991-02-26 | Nippon Mining Co Ltd | Sputtering target for electrically conductive transparent ito film |
| JPH04285163A (en) * | 1991-03-11 | 1992-10-09 | Nikko Kyodo Co Ltd | Ito sputtering target |
| JPH07310178A (en) * | 1994-04-19 | 1995-11-28 | Leybold Ag | Substrate coating device |
| WO2011118334A1 (en) * | 2010-03-26 | 2011-09-29 | 住友金属鉱山株式会社 | Oxide deposition material and transparent conductive film |
| JP4864159B1 (en) * | 2010-11-30 | 2012-02-01 | パナソニック株式会社 | Air conditioner |
| JP2016023333A (en) * | 2014-07-18 | 2016-02-08 | 三菱マテリアル株式会社 | Manufacturing method of lithium nickel oxide sputtering target |
-
1986
- 1986-08-07 JP JP61184207A patent/JPS6340756A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01290550A (en) * | 1988-05-16 | 1989-11-22 | Tosoh Corp | Production of target for sputtering to be used for production of transparent electro-conductive film |
| JPH0344464A (en) * | 1989-07-13 | 1991-02-26 | Nippon Mining Co Ltd | Sputtering target for electrically conductive transparent ito film |
| JPH04285163A (en) * | 1991-03-11 | 1992-10-09 | Nikko Kyodo Co Ltd | Ito sputtering target |
| JPH07310178A (en) * | 1994-04-19 | 1995-11-28 | Leybold Ag | Substrate coating device |
| WO2011118334A1 (en) * | 2010-03-26 | 2011-09-29 | 住友金属鉱山株式会社 | Oxide deposition material and transparent conductive film |
| JP2011202246A (en) * | 2010-03-26 | 2011-10-13 | Sumitomo Metal Mining Co Ltd | Oxide deposition material and transparent conductive film |
| CN102812150A (en) * | 2010-03-26 | 2012-12-05 | 住友金属矿山株式会社 | Oxide deposition material and transparent conductive film |
| TWI422696B (en) * | 2010-03-26 | 2014-01-11 | Sumitomo Metal Mining Co | Oxide vapor deposition material and transparent conductive film |
| JP4864159B1 (en) * | 2010-11-30 | 2012-02-01 | パナソニック株式会社 | Air conditioner |
| JP2016023333A (en) * | 2014-07-18 | 2016-02-08 | 三菱マテリアル株式会社 | Manufacturing method of lithium nickel oxide sputtering target |
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