JPS634054A - Vacuum forming device for thin film - Google Patents
Vacuum forming device for thin filmInfo
- Publication number
- JPS634054A JPS634054A JP14891286A JP14891286A JPS634054A JP S634054 A JPS634054 A JP S634054A JP 14891286 A JP14891286 A JP 14891286A JP 14891286 A JP14891286 A JP 14891286A JP S634054 A JPS634054 A JP S634054A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- vacuum chamber
- particles
- substrate
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000007666 vacuum forming Methods 0.000 title abstract 2
- 239000000428 dust Substances 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 2
- 238000013019 agitation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
この発明は、真空槽内の基板上に薄膜を形成するための
装置に関し、特に、かかる真空槽内にて薄膜を形成する
際に発生する落下粒子あるいは粉塵等の対策処理を考慮
した真空薄膜形成装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to an apparatus for forming a thin film on a substrate in a vacuum chamber, and particularly relates to an apparatus for forming a thin film on a substrate in a vacuum chamber. The present invention relates to a vacuum thin film forming apparatus that takes measures against falling particles or dust into consideration.
[従来の技術]
第4図は従来−般に用いられている例えばスパッタ装置
の断面図であり、図において、1は真空槽、2はターゲ
ット、3は基板ホルダ、4は基板ホルダ3に取付けられ
る基板、5はスパッタ成膜時に発生するプラズマ、6は
スパッタ成膜時にガスを流入させるスパッタガス導入口
、7は真空ポンプ等の排気装置への排気口、8はDC電
源(直流電源)、9はDC電源8をターゲット2および
基板ホルダ3をつなぐ導線、10はスパッタ成膜時に発
生する微細粒子である。[Prior Art] Fig. 4 is a cross-sectional view of a sputtering apparatus conventionally used in general, for example, in which 1 is a vacuum chamber, 2 is a target, 3 is a substrate holder, and 4 is a sputtering device attached to the substrate holder 3. 5 is plasma generated during sputter film formation, 6 is a sputter gas inlet for introducing gas during sputter film formation, 7 is an exhaust port to an exhaust device such as a vacuum pump, 8 is a DC power supply (DC power supply), Reference numeral 9 indicates a conductive wire connecting the DC power supply 8 to the target 2 and the substrate holder 3, and 10 indicates fine particles generated during sputtering film formation.
次に動作について説明する。真空槽1は排気ロアより真
空吸引された後、スパッタガス導入口6よりスパッタガ
スが導入される。これにD Cw源8の電圧を印加する
と、ターゲット2と基板ホルダ3との間にプラズマ5が
発生し、この中のイオンがターゲット2の表面をスパッ
タし、とび出した中性原子2分子が基板4上に析出して
薄膜が形成される。この時の成膜に関与しなかった粒子
およびターゲット2表面上に形成された微細突起等の脱
落したものが微測粒子10として槽内下部に落下し粉塵
となって真空槽1内に堆積する。Next, the operation will be explained. After the vacuum chamber 1 is evacuated by an exhaust lower, sputtering gas is introduced through the sputtering gas inlet 6. When the voltage of the DCw source 8 is applied to this, a plasma 5 is generated between the target 2 and the substrate holder 3, ions in this sputter the surface of the target 2, and two molecules of neutral atoms that pop out are attached to the substrate. 4 to form a thin film. Particles that did not participate in the film formation at this time and fallen particles such as minute protrusions formed on the surface of the target 2 fall to the lower part of the chamber as microscopic particles 10 and become dust and accumulate in the vacuum chamber 1. .
[発明が解決しようとする問題点]
しかしながら、このような従来の真空薄膜形成装置は以
上のように構成されているので、真空槽1内に脱落して
粉塵となった粒子は真空槽1のリーク時や排気作業時に
発生する気流の乱れ等により、再び舞い上って基板4お
よびターゲット2上に付着し、欠陥膜を作る原因となる
。さらには、量産機の連続スパッタ装置においては、基
板の搬送を伴うので、これによる振動や攪はんにより一
層欠陥膜の発生が増えるなどの問題点がある。[Problems to be Solved by the Invention] However, since such a conventional vacuum thin film forming apparatus is configured as described above, particles that fall into the vacuum chamber 1 and become dust are collected in the vacuum chamber 1. Due to airflow turbulence that occurs during leakage or exhaust work, the particles fly up again and adhere to the substrate 4 and target 2, causing defective films. Furthermore, in a continuous sputtering apparatus for mass production, since the substrate is transported, there is a problem that the vibration and agitation caused by this process further increase the occurrence of defective films.
この発明は上記のような問題点を解消するためになされ
たもので、真空槽内に発生した粉塵による欠陥膜の形成
を有効に防止できるようにした真空薄膜形成装置を得る
ことを目的とする。This invention was made to solve the above-mentioned problems, and its purpose is to provide a vacuum thin film forming apparatus that can effectively prevent the formation of defective films due to dust generated in a vacuum chamber. .
[問題点を解決するための手段]
この発明に係る真空薄膜形成装置は、真空槽内に発生す
る粒子の落下による通過は容易に許容するが、下から舞
い上がる即ち上JLする粒子および粉塵の通過はしや閉
するよう構成したダストじゃ閉板を真空槽内下部に配置
したものである。[Means for Solving the Problems] The vacuum thin film forming apparatus according to the present invention easily allows particles generated in the vacuum chamber to pass through by falling, but allows particles and dust that fly up from below to pass through. A dust jacket that is configured to close like a lid is placed at the bottom of the vacuum chamber.
[作 用コ
この発明における真空薄膜形成装置においては、真空槽
下部に配置されたダストじゃ閉板により落下する粒子の
通過は容易であるが、下から舞い上がる粒子および粉塵
の通過は困難であるよう、しや閉することにより、成膜
への粉塵の混入を防ぎ、かつ、粉塵を真空槽下方に収集
させる。[Function] In the vacuum thin film forming apparatus of this invention, it is easy for falling particles to pass through the dust closing plate placed at the bottom of the vacuum chamber, but it seems to be difficult for particles and dust flying up from below to pass through. By closing the chamber, dust is prevented from entering the film, and the dust is collected below the vacuum chamber.
[発明の実施例コ
以下、この発明の一実施例を図について説明する。第1
図はこの発明の一実施例としての真空薄膜形成装置を示
す断面図であり、この第1図において、1は真空槽、2
はターゲット、3は基板ホルダ、4は基板、5はプラズ
マ、6はスパッタガス導入口、7は排気口、8はDC電
源、9は導線、10は成膜時に発生する微細な粒子であ
るが、これらのものは第4図に示した従来の真空薄膜形
成装置とほぼ同様にものである。[Embodiment of the Invention] An embodiment of the invention will be described below with reference to the drawings. 1st
The figure is a cross-sectional view showing a vacuum thin film forming apparatus as an embodiment of the present invention. In this figure, 1 is a vacuum chamber;
is a target, 3 is a substrate holder, 4 is a substrate, 5 is a plasma, 6 is a sputtering gas inlet, 7 is an exhaust port, 8 is a DC power supply, 9 is a conductor, and 10 is a fine particle generated during film formation. , these devices are almost the same as the conventional vacuum thin film forming apparatus shown in FIG.
また、11は真空槽1内下部に配置されたダストじゃ閉
板である。ダストじゃ閉板11は第2図および第3図に
その一部分を拡大して示すように、面部に多数の穴13
があけられており、各穴13の下側縁部には下方に向は
傾斜する傾斜羽14が設けられている。従って、落下す
る粒子15は穴13を通過して傾斜羽14の傾斜面上側
に沿って下方に落下し、上昇せんとする粒子は傾斜羽1
4の傾斜面下側に当って穴13の通過を妨げられ、その
多くがはね返されて真空槽下方に堆積する。Further, 11 is a dust cover plate disposed at the lower part of the vacuum chamber 1. The dust cover plate 11 has a large number of holes 13 on its surface, as partially enlarged in FIGS. 2 and 3.
are drilled, and the lower edge of each hole 13 is provided with an inclined wing 14 that slopes downward. Therefore, the falling particles 15 pass through the hole 13 and fall downward along the upper side of the sloped surface of the sloped blade 14, and the particles trying to rise fall from the sloped blade 14.
4, it is blocked from passing through the hole 13, and most of it is repelled and deposited below the vacuum chamber.
なお、上記ではダストじゃ閉板の一例について述べたが
同一の幾何学的効果をもつ構成のものは全て利用できる
ことはいうまでもない。Incidentally, although an example of a dust closed plate has been described above, it goes without saying that all configurations having the same geometrical effect can be used.
[発明の効果]
以上のようにこの発明によれば、真空薄膜形成装置の槽
内下部にダストじゃ閉板を配置することにより、落下す
る粒子の通過を容易にし、かつ、上昇する粒子、粉塵の
通過をしや閉することができ、これにより成膜時におけ
る粉塵等の成膜面への付着を防止して、良質の薄膜を形
成し得られるとともに、粉塵を下方に集めてその回収を
容易にすることができる等の効果がある。[Effects of the Invention] As described above, according to the present invention, by arranging the dust barrier plate at the lower part of the tank of the vacuum thin film forming apparatus, it is possible to facilitate the passage of falling particles and prevent the rising particles and dust from passing through. This prevents dust from adhering to the film forming surface during film formation, forming a high-quality thin film, and also collects the dust downward for recovery. There are effects such as making it easier.
第1図はこの発明の一実施例による真空薄膜形成装置の
断面図、第2図はダストじゃ閉板の一部拡大斜面図、第
3図は同ダストじゃ閉板の部分断面図、第4図は従来の
真空薄膜形成装置の断面図である。
図において、1・−真空槽、lQ−粒子、l 1−・−
ダストしや閉板、13−・−穴、14−・−傾斜羽。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a sectional view of a vacuum thin film forming apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged perspective view of a part of the dust jacket plate, FIG. 3 is a partial sectional view of the dust jacket plate, and FIG. The figure is a cross-sectional view of a conventional vacuum thin film forming apparatus. In the figure, 1.-vacuum chamber, lQ-particle, l 1-.-
Dust shield and closed plate, 13-...-hole, 14-...-slanted wing. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (2)
、同真空槽の下部に、同真空槽にて成膜時に発生した粒
子の落下による通過は許容するが上昇による通過はしや
閉するダストしや閉板が配置されたことを特徴とする真
空薄膜形成装置。(1) In an apparatus that forms a thin film on a substrate in a vacuum chamber, the lower part of the vacuum chamber allows particles generated during film formation in the vacuum chamber to pass through due to falling, but does not allow them to pass through due to upward movement. A vacuum thin film forming apparatus characterized in that a dust shield and a closing plate are arranged.
設け、同傾斜羽が、落下する粒子はその傾斜面上側に沿
つて下に落ち、上昇する粒子はその傾斜面下側に当つて
下に戻されるような傾斜状態で配置されたことを特徴と
する特許請求の範囲第1項記載の真空薄膜形成装置。(2) A sloped blade is provided at the lower edge of the hole in the dust shield and closing plate, and the sloped blade causes falling particles to fall down along the upper side of the slope, and particles to rise to the bottom of the slope. The vacuum thin film forming apparatus according to claim 1, wherein the vacuum thin film forming apparatus is arranged in an inclined state so that it hits the lower side and is returned downward.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14891286A JPS634054A (en) | 1986-06-24 | 1986-06-24 | Vacuum forming device for thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14891286A JPS634054A (en) | 1986-06-24 | 1986-06-24 | Vacuum forming device for thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS634054A true JPS634054A (en) | 1988-01-09 |
Family
ID=15463435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14891286A Pending JPS634054A (en) | 1986-06-24 | 1986-06-24 | Vacuum forming device for thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS634054A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5401356A (en) * | 1991-08-12 | 1995-03-28 | Hitachi, Ltd. | Method and equipment for plasma processing |
KR100526007B1 (en) * | 2000-12-28 | 2005-11-08 | 엘지.필립스 엘시디 주식회사 | Plasma etching apparatus |
JP2016183397A (en) * | 2015-03-26 | 2016-10-20 | 芝浦メカトロニクス株式会社 | Film deposition apparatus |
-
1986
- 1986-06-24 JP JP14891286A patent/JPS634054A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5401356A (en) * | 1991-08-12 | 1995-03-28 | Hitachi, Ltd. | Method and equipment for plasma processing |
KR100526007B1 (en) * | 2000-12-28 | 2005-11-08 | 엘지.필립스 엘시디 주식회사 | Plasma etching apparatus |
JP2016183397A (en) * | 2015-03-26 | 2016-10-20 | 芝浦メカトロニクス株式会社 | Film deposition apparatus |
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