JPS6338575A - Mask sheet for sputtering - Google Patents
Mask sheet for sputteringInfo
- Publication number
- JPS6338575A JPS6338575A JP18219086A JP18219086A JPS6338575A JP S6338575 A JPS6338575 A JP S6338575A JP 18219086 A JP18219086 A JP 18219086A JP 18219086 A JP18219086 A JP 18219086A JP S6338575 A JPS6338575 A JP S6338575A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- sic
- mask plate
- sheet
- mask sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000919 ceramic Substances 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000283080 Proboscidea <mammal> Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 108010091078 rigin Proteins 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＳｉＣ薄膜を形成する時に用いるスパッタ用マ
スク板に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a sputtering mask plate used when forming a SiC thin film.
従来の技術
以下図面を参照にしながら従来のスパッタ用マスク板に
ついて説明を行う。2. Description of the Related Art A conventional sputtering mask plate will be explained below with reference to the drawings.
従来のスパッタ用マスク板は第４図に示す様に０．２
ｍｍ −ｏ、ｓ ｍｍの金属またはセラミック製の薄板
１に、被スパツタ物である絶縁基板のＳｉＣ薄膜を形成
させる所に合わせてマスク穴２を設は絶縁基板に密着さ
せて使用する構造であった。The conventional sputtering mask plate has a diameter of 0.2 as shown in Figure 4.
A mask hole 2 is formed in a metal or ceramic thin plate 1 of mm - o, s mm in size in accordance with the location where the SiC thin film of the insulating substrate to be sputtered is to be formed. Ta.
発明が解決しようとする問題点
ところがこの様な従来の構造では、スパッタ用マスク板
はヒータでの加熱、スパッタエネルギーによる発熱、お
よびスパッタ用マ虫り板とスパッタ用マスク板に付着す
るＳｉＣとの熱膨張系数の相異により、スパッタ中にス
パッタ用マスク板が反ることにより、スパッタ用マスク
板と被スパツタ物である絶縁基板の間に間隙が生じ、絶
縁基板上のＳｉＣが形成されるべき所の周囲にもＳｉＣ
かにじんだ様に形成され、スパッタ用マスク板としての
機能を十分果さなかった。この現象は第６図Ａに示すよ
うにマスク板が薄い程顕著に見られる。従って、スパッ
タ用マスク板を厚くすることにより、反りを小さくする
事はできるが、第５図已に示すように逆にスパッタ用マ
スク板の影となって絶縁基板に規定のＳｉＣの膜厚を得
るためのスパッタ時間が長くなり、実用；Ｃ供せなかっ
た。Problems to be Solved by the Invention However, in such a conventional structure, the sputtering mask plate is heated by a heater, heat is generated by sputtering energy, and SiC adheres to the sputtering plate and the sputtering mask plate. Due to the difference in thermal expansion coefficients, the sputtering mask plate warps during sputtering, creating a gap between the sputtering mask plate and the insulating substrate that is the object to be sputtered, and forming SiC on the insulating substrate. SiC around the place
It was formed in a cloudy manner and did not function adequately as a sputtering mask plate. This phenomenon becomes more noticeable as the mask plate becomes thinner, as shown in FIG. 6A. Therefore, warpage can be reduced by increasing the thickness of the sputtering mask plate, but as shown in Figure 5, the shadow of the sputtering mask plate may cause the insulating substrate to have a specified SiC film thickness. Since the sputtering time required to obtain the resultant composition was long, it could not be put to practical use.
本発明はこの髄な問題点を解決するもので、反りにくく
かつ短時間で被スパツタ物である絶縁基板に規定のＳｉ
Ｃ膜厚の得られる、スパッタ用マスク板を提供すること
を目的とするものである。The present invention solves this fundamental problem by sputtering a specified Si material onto an insulating substrate that is less likely to warp and can be sputtered in a short time.
The object of the present invention is to provide a sputtering mask plate that can obtain a film thickness of C.
問題点を解決するだめの手段
この問題点を解決するために本発明のスパッタ用マスク
板は、被スパツタ物である絶縁基板のＳｉＣが形成され
るべき所に合わせて設けた穴に、ＳｉＣが飛来する方向
に開いたテーパーを設けたものである。Means for Solving the Problem In order to solve this problem, the sputtering mask plate of the present invention has a sputtering mask plate in which SiC is formed in a hole formed in the insulating substrate to be sputtered at a location where SiC is to be formed. It has a taper that opens in the direction of flight.
作用
この構成により、スパッタ用マスク板の厚さをスパッタ
中の反りを無視できるくらい厚くして（マスク穴にＳｉ
Ｃが飛来する方向に開いたテーパーを設けているため、
被ス・バッタ物である絶縁基板が、スパッタ用マスク板
の影にほとんどならずに、規定のＳｌＣ膜厚を得るため
のスパッタ時間も従来のスパッタ用マスクを用いた時と
ほとんど変わらない。よって反りに〈＜、かつ短時間で
絶縁基板に規定のＳｉＣ膜厚が得られることとなる。Effect With this configuration, the thickness of the sputtering mask plate can be made thick enough to ignore warping during sputtering (Si is placed in the mask hole).
Because it has a taper that opens in the direction in which C flies,
The insulating substrate, which is the object to be sputtered and sputtered, is hardly shadowed by the sputtering mask plate, and the sputtering time to obtain a specified SlC film thickness is almost the same as when using a conventional sputtering mask. Therefore, the warpage is less than <<, and the specified SiC film thickness can be obtained on the insulating substrate in a short time.
実施例
以下、本発明の一実施例のスパッタ用マスク板を図面を
参照に説明する。EXAMPLE Hereinafter, a sputtering mask plate according to an example of the present invention will be explained with reference to the drawings.
第１図に示すように、金属またはセラミック芙の薄板１
に、被スパツタ物である絶縁基板のＳｉＣが形成される
べき所に合わせて設けたマスク穴２にＳＩＧが飛来する
方向に開いたテーパー３を設けた構造である。As shown in Figure 1, a thin metal or ceramic leaf plate 1
In addition, a taper 3 that opens in the direction in which the SIG flies is provided in a mask hole 2 that is provided at a location where SiC on an insulating substrate to be sputtered is to be formed.
以上の様に構成されたスパッタ用マスク板について、実
施例の説明を行う。まず、薄板１の厚さは、スパッタ中
に生じる反りを少なくでき、かつ加工の容易な厚さ、ｏ
、ｓ ｍｍから３ｍｍを有する。Examples of the sputtering mask plate configured as described above will be described. First, the thickness of the thin plate 1 is such that it can reduce warping that occurs during sputtering and is easy to process.
, s mm to 3 mm.
次にテーパーの角度は、効率よく、つまり第２図に示す
ように、短時間で規定のＳｉＣ膜厚を得ることができ、
隣接するマスク穴に影響を与えず、かつ薄板１の平均厚
みが、薄板１の反りに影響するくらいに薄くならない、
薄板１の板面を基準に３０度から６０度の角度を有する
ようにする。Next, the angle of the taper can be set efficiently, that is, as shown in Figure 2, the specified SiC film thickness can be obtained in a short time.
Adjacent mask holes are not affected, and the average thickness of the thin plate 1 does not become thin enough to affect warping of the thin plate 1.
It is made to have an angle of 30 degrees to 60 degrees with respect to the plate surface of the thin plate 1.
尚、第３図はテーパー角度を４６°とした場合の結果で
あり、第５図の場合と比較してスパッタ時間の改善がな
されていることがわかる。又、第２図、第３図において
、人はスパッタ用マスク板の反り、Ｂは１０μｍのＳｉ
Ｃ膜厚を得るためのスパッタ時間を示す。Incidentally, FIG. 3 shows the results when the taper angle is 46°, and it can be seen that the sputtering time is improved compared to the case of FIG. 5. In addition, in Figures 2 and 3, person is warped sputtering mask plate, B is 10μm Si
The sputtering time to obtain the C film thickness is shown.
発明の効果
以上のように本実施例によれば、スパッタ用マスク板の
被スパツタ物である絶縁基板のＳｉＣが形成されるべき
所に合わせて設けたマスク穴に、ＳｉＣが飛来する方向
に開けたテーパーを設けることにより、反りにくく、か
つ短時間で規定のＳｉＣ膜厚を得られるスパッタ用マス
ク板を得ることができる。Effects of the Invention As described above, according to this embodiment, mask holes are formed in the direction in which SiC is to be formed in the insulating substrate that is the sputtering target of the sputtering mask plate, and are made in the direction in which SiC is to be formed. By providing such a taper, it is possible to obtain a sputtering mask plate that is less likely to warp and can obtain a prescribed SiC film thickness in a short time.
第１図は本発明における一実施例を示し、第１図＆はス
パッタ用マスク・板の正面図、第１図すは第１図ａのム
ーＡ′断面図、第２図、第３図はマスク板に設けたテー
パーの影響を示す特性図、第４図は従来例を示し、第４
図ａはスパッタ用マスク板の正面図、第４図すは第７図
ａのＢ −Ｂ’断面ス、第５図はマスク板厚みとその反
り、スパッタ時間を示す特性図でちる。
１・・・・・・薄板、２・・・・・・マスク穴、３・・
・・・・テーパー。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
（α）
テーパー煎−スハ〜り吟「ｉ
テーパー角及イ及）
ニ（）％つζシｎ７マ°；（つＬ１２ξ２ｊ−ろ（−二
ζ〕も、グ屓覆−２つ乙（受り及りスパー７グ用マスク
リみ（ｍ広）
第４図
（ｂ）＝コロロロロ二象／FIG. 1 shows an embodiment of the present invention, FIG. 1 & is a front view of a sputtering mask/plate, FIG. is a characteristic diagram showing the influence of the taper provided on the mask plate, FIG. 4 shows a conventional example,
Figure a is a front view of a sputtering mask plate, Figure 4 is a cross-sectional view taken along line B-B' in Figure 7a, and Figure 5 is a characteristic diagram showing the mask plate thickness, its warpage, and sputtering time. 1...Thin plate, 2...Mask hole, 3...
····taper. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Diagram (α) Taper angle - Suha - Rigin "i Taper angle and I and) ni ()% ζ s n7 ma °; Masking hole for receiving and spur 7g (m wide) Fig. 4 (b) = Kororororo two elephants /
Claims (2)
設けた穴に、ＳｉＣが飛来する方向に開いたテーパーを
設けたスパッタ用マスク板。(1) A mask plate for sputtering in which a hole is formed in the insulating substrate at a location where SiC is to be formed, and a taper is provided in the direction in which SiC flies.
基準として３０度から６０度、板厚を０．５ｍｍから３
ｍｍとした特許請求の範囲第１項記載のスパッタ用マス
ク板。(2) Adjust the taper angle from 30 degrees to 60 degrees with respect to the plate surface of the sputtering mask plate, and adjust the plate thickness from 0.5 mm to 3 mm.
The sputtering mask plate according to claim 1, in which the diameter is mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18219086A JPS6338575A (en) | 1986-08-01 | 1986-08-01 | Mask sheet for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18219086A JPS6338575A (en) | 1986-08-01 | 1986-08-01 | Mask sheet for sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6338575A true JPS6338575A (en) | 1988-02-19 |
Family
ID=16113909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18219086A Pending JPS6338575A (en) | 1986-08-01 | 1986-08-01 | Mask sheet for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6338575A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030008719A (en) * | 2001-07-19 | 2003-01-29 | 오리온전기 주식회사 | Method for forming mask of organic electroluminescence device |
-
1986
- 1986-08-01 JP JP18219086A patent/JPS6338575A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030008719A (en) * | 2001-07-19 | 2003-01-29 | 오리온전기 주식회사 | Method for forming mask of organic electroluminescence device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0255934B2 (en) | ||
| TW360626B (en) | Metallized ceramic substrate having smooth plating layer and method for producing the same | |
| KR102146162B1 (en) | Glass Mask | |
| JPS6338575A (en) | Mask sheet for sputtering | |
| JPS63118062A (en) | Sputtering method | |
| JPS63310956A (en) | Film forming metal mask | |
| JP2844779B2 (en) | Film formation method | |
| JPH0343988A (en) | Manufacture of thin-type high-temperature heater | |
| JPS5461478A (en) | Chromium plate | |
| JP3303507B2 (en) | Mask for thin film formation | |
| JPH04303537A (en) | Vapor deposition method for anti-doming material of shadow mask | |
| JPH11229117A (en) | Masking device | |
| JPS58697Y2 (en) | Target for sputtering | |
| Dalder et al. | Evaluation of several high-strength copper sheet alloys | |
| JPS61130480A (en) | Mask for vapor deposition | |
| JPH0230442Y2 (en) | ||
| JPS5353977A (en) | Electron beam exposure device | |
| JPS5932587Y2 (en) | Mask device for thin film production | |
| SU693486A1 (en) | Electrode for ionization chamber of x-ray exposure meter | |
| JPS5819470A (en) | Vapor-depositing method with masking | |
| JPH02266524A (en) | Formation of protective coat | |
| JPS59110777A (en) | Formation of evaporation pattern | |
| JPS58185018A (en) | Production of thin film magnetic head | |
| JPS60110871A (en) | Apparatus for forming thin film | |
| JPS616272A (en) | Opposed target type sputtering device |