JPS6336524A - Apparatus for heat-treating wafer - Google Patents
Apparatus for heat-treating waferInfo
- Publication number
- JPS6336524A JPS6336524A JP18035286A JP18035286A JPS6336524A JP S6336524 A JPS6336524 A JP S6336524A JP 18035286 A JP18035286 A JP 18035286A JP 18035286 A JP18035286 A JP 18035286A JP S6336524 A JPS6336524 A JP S6336524A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- gas
- paddle
- pipe
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims abstract description 40
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はウェーハ熱処理袋kに関し、特に大口径ウェー
ハの熱拡散又はCVDに好適なウェーハ熱処理装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wafer heat treatment bag k, and particularly to a wafer heat treatment apparatus suitable for thermal diffusion or CVD of large diameter wafers.
従来、この種のウェーハの熱拡散又はCVDのためのウ
ェーハ熱処理装置のウェーハ搬送技術は第2図に示すよ
うに、車輪5を有するパドル7上に載置された複数のボ
ート1つ上にシリコンウェーハ8を載置し、パドル7は
引き出し棒10とパドルを載置したパドル引き出し装置
21により構成され、炉芯管18にパドル引き出し装置
により出し入れされる。また、図において15は炉体、
18は炉芯管、29.26及び22.23゜24は引き
出し棒及びパドル引き出し装置の動きを示す矢印である
。その動作はパドル引き出し装置が炉芯管内に入り炉芯
管内の所定の位置に到達すると下降し、パドルを引き出
し装置より下ろし、引き出し装置は引き出し棒と共に炉
芯管外に出される。なお、パドル引き出し装置はウェー
ハの所定の位置より手前まで挿入される。Conventionally, the wafer transfer technology of this type of wafer heat treatment apparatus for thermal diffusion or CVD of wafers is as shown in FIG. The paddle 7 on which the wafer 8 is placed is constituted by a pull-out rod 10 and a paddle pull-out device 21 on which the paddle is placed, and is taken in and out of the furnace core tube 18 by the paddle pull-out device. In addition, in the figure, 15 is a furnace body;
18 is a furnace core tube, 29.26 and 22.23 degrees 24 are arrows showing the movements of a pull-out rod and a paddle pull-out device. The operation is such that when the paddle pull-out device enters the furnace core tube and reaches a predetermined position within the furnace core tube, it is lowered, the paddle is lowered from the pull-out device, and the pull-out device is taken out of the furnace core tube together with the pull-out rod. Note that the paddle pull-out device is inserted to the front of the wafer at a predetermined position.
上述した従来のウェーハ搬送技術は炉芯管外部にウェー
ハを取り出すと空気中に直に接触することになり空気中
の浮遊塵に接触しパーティクル汚染が問題となっていた
。又、ウェーハ径が大きくなることにより大重量となる
ことによる機構部及びパドル引き出し装置の強度上の問
題、炉口より大量の空気が炉内に入り込み熱拡散時及び
CVD成長時多結晶シリコンコンタクト性に炉内の酸素
濃度の問題が大きなファクターとなり又空気が炉芯管内
に流れ込むことにより炉芯管内汚染という欠点がある。In the conventional wafer transport technology described above, when the wafer is taken out of the furnace core tube, it comes into direct contact with the air, and comes into contact with floating dust in the air, resulting in particle contamination. In addition, as the wafer diameter increases, the weight increases, which leads to problems with the strength of the mechanism and paddle pull-out device, and a large amount of air enters the furnace from the furnace mouth, causing problems with polycrystalline silicon contact during thermal diffusion and CVD growth. In addition, the problem of oxygen concentration in the furnace becomes a major factor, and air flows into the furnace core tube, resulting in contamination inside the furnace core tube.
本発明の目的は、大口径ウェーハになり大重量となって
も機構部及びパドル引き出し装置の強度上の問題がなく
、また炉口より大量の空気が入り込み炉内の酸素濃度の
増大により起る諸問題、並びに炉芯管よりウェーハと共
にパドルを引き出しな際空気に接触しウェーハ表面にパ
ーティクルの付着を防止することが可能なウェーハ熱処
理装置を提供することにある。The purpose of the present invention is to avoid problems with the strength of the mechanical part and paddle pull-out device even when the wafers have a large diameter and become heavy, and also to avoid problems caused by a large amount of air entering from the furnace mouth and an increase in oxygen concentration in the furnace. It is an object of the present invention to provide a wafer heat treatment apparatus that can solve various problems and prevent particles from adhering to the wafer surface due to contact with air when the paddle is pulled out together with the wafer from the furnace core tube.
本発明のウェーハ熱処理装置は、大口径ウェーハを収容
するボートを載置するパドルと、該パドルを支持し挿入
出を容易ならしむる複数個のガイド用保持片と、該ガイ
ド用保持片に設置された車輪と、ウェーハ収容ボートの
上部位置に設置され微小穴の設けられたガス供給パイプ
と、パドルを引き出すための引き出し棒と、該引き出し
棒と連動する遮板と、上記部分を覆い車輪が長手方向に
挿入可能な複数の溝を有する円筒状移動パイプとを備え
たウェーハハンドリング装置と、炉芯管出入口に設けら
れたガスカーテンとを有することによる構成される。The wafer heat treatment apparatus of the present invention includes a paddle on which a boat containing large-diameter wafers is placed, a plurality of guide holding pieces that support the paddle and facilitate insertion and removal, and a plurality of guide holding pieces installed on the guide holding piece. a gas supply pipe installed in the upper part of the wafer storage boat and provided with a microhole, a pull-out rod for pulling out the paddle, a shield that interlocks with the pull-out rod, and a wheel that covers the above-mentioned parts. It is constructed by having a wafer handling device equipped with a cylindrical moving pipe having a plurality of grooves that can be inserted in the longitudinal direction, and a gas curtain provided at the entrance and exit of the furnace core tube.
次に、本発明の実施例について図面を参照して説明する
。第1図(a)〜(c)は本発明の一実施例の模式的断
面図であり、第1図(a)は炉芯管部、第1図(b)は
ウェーハハンドリング装置、第1図(C)はA部の拡大
1川面図である。Next, embodiments of the present invention will be described with reference to the drawings. 1(a) to 1(c) are schematic cross-sectional views of one embodiment of the present invention, in which FIG. 1(a) is a furnace core tube section, FIG. 1(b) is a wafer handling device, and a first embodiment of the present invention. Figure (C) is an enlarged river view of section A.
第1図(a)〜(c)において、円筒状移動パイプ1の
内部の上部にはガス供給パイプ2が設けられ、ガス供給
パイプ2には多数の細孔3が設けられガスがガス吹出矢
印9のように吹出すようにされている。シリコンウェー
ハ8を収容するボーI・19を載置するパドル7にはガ
イド用保持片6、ガイド用保持片には車輪5が設置され
ている。なお、円筒状移動パイプ1の下部にはパドル7
の車輪が長手方向に挿入出可能な複数の溝20が設けら
れている。また10は引き出し棒であり、4は引き出し
棒と連動する遮板であり、以上でウェーハハンドリング
装置部を構成している。In FIGS. 1(a) to 1(c), a gas supply pipe 2 is provided in the upper part of the inside of the cylindrical moving pipe 1, and the gas supply pipe 2 is provided with a large number of pores 3 so that the gas is It is designed to blow out like 9. A guide holding piece 6 is installed on the paddle 7 on which the board I-19 containing the silicon wafer 8 is placed, and a wheel 5 is installed on the guide holding piece. Note that a paddle 7 is provided at the bottom of the cylindrical moving pipe 1.
A plurality of grooves 20 are provided into which wheels can be inserted and removed in the longitudinal direction. Further, 10 is a pull-out rod, and 4 is a shielding plate interlocked with the pull-out rod, and the above constitutes a wafer handling device section.
一方、炉芯管部の15は炉体、18は炉芯管である。そ
して炉芯管の出入口部分にはガスカーテン12が設置さ
れ、ガス供給口13を通してガス11が導入され吹出ガ
ス14により流入空気を遮断するようにされている。On the other hand, 15 of the furnace core tube section is a furnace body, and 18 is a furnace core tube. A gas curtain 12 is installed at the entrance and exit portion of the furnace core tube, gas 11 is introduced through a gas supply port 13, and the blowing gas 14 blocks incoming air.
上記したウェーハ熱処理装置はボー1−19上に載置さ
れた複数のシワコンウェーハ8がパドル7上に載置され
、パドルは円筒状搬送用パイプ1の内部に収納され、そ
の円筒状搬送用パイプの上部には多数の細孔3を具備し
たガス供給パイプが設置され、その多数の細孔3より雰
囲気ガスを送気し円筒内部を雰囲気ガスに保持するよう
にされている。In the above-described wafer heat treatment apparatus, a plurality of wrinkled wafers 8 placed on a bow 1-19 are placed on a paddle 7, and the paddle is housed inside a cylindrical transfer pipe 1. A gas supply pipe having a large number of pores 3 is installed in the upper part of the pipe, and atmospheric gas is supplied through the large number of pores 3 to maintain the atmosphere inside the cylinder.
また、パドルの後部には移動できる遮板が引き出し棒と
連動するよう設けられ雰囲気ガスの流出を防止している
。また、パドルを搬送する構造として円筒状片持梁構造
をとり重量物の搬送を可能とし、機構は前後(長手方向
)の移動のみでパドルの炉内への挿入を可能としている
。Furthermore, a movable shield plate is provided at the rear of the paddle in conjunction with the pull-out rod to prevent atmospheric gas from leaking out. In addition, a cylindrical cantilever structure is used as the structure for conveying the paddle, making it possible to convey heavy objects, and the mechanism allows the paddle to be inserted into the furnace by only moving back and forth (in the longitudinal direction).
又、炉芯管口には大気流入防止用の円筒状雰囲気ガスカ
ーテンを設け、パドルを載置した円筒状搬送用パイプが
炉内に挿出入する除光に説明した円筒状搬送用パイプの
内部の上部に設けられたガス供給パイプから吹出す雰囲
気ガスと二重の空気遮断が可能となる。In addition, a cylindrical atmosphere gas curtain is provided at the furnace core pipe port to prevent air from entering, and the inside of the cylindrical transport pipe with a paddle mounted thereon is inserted into and removed from the furnace. Double air isolation from the atmospheric gas blown out from the gas supply pipe installed at the top of the tank is possible.
以上の構成によりパドル上のボートに収容されたウェー
ハは円筒状搬送用パイプ内に入れられ雰囲気ガスに満さ
れた状態で炉芯管の定位置まで挿入され、その後、パド
ル、パドル上のボートに収容されたシリコンウェーハを
定位置に残置し他は炉芯管外に取り出される。処理後は
取り出した部分を雰囲気ガスで置換した後炉芯管内に入
れシリコンウェーハを酸素雰囲気に触れずに取出すこと
が出来る。With the above configuration, the wafers housed in the boat on the paddle are put into the cylindrical transfer pipe, filled with atmospheric gas, and inserted into the furnace core tube at a fixed position, and then transferred to the paddle and the boat on the paddle. The accommodated silicon wafers are left in place and the others are taken out of the furnace core tube. After processing, the removed portion is replaced with atmospheric gas and then placed into the furnace core tube, allowing the silicon wafer to be removed without coming into contact with the oxygen atmosphere.
以上説明したように本発明は、ウェーハサイズが大型に
なり大重量になった場合でも円筒片持梁構造にすること
により高純度耐熱材で十分に荷重に耐えることができる
。As explained above, in the present invention, even when the wafer size increases and the weight increases, the cylindrical cantilever structure allows the high-purity heat-resistant material to sufficiently withstand the load.
また、ウェーハサイズが大型になり炉芯管内が酸素濃度
異常となり易いが本発明では炉芯管出入口にガスカーテ
ンを設は炉芯管内に流入する空気を遮断し酸素濃度を下
げているのでこれに基く問題は発生しない。In addition, as the wafer size increases, the oxygen concentration inside the furnace core tube is likely to become abnormal, but in the present invention, a gas curtain is installed at the entrance and exit of the furnace core tube to cut off air flowing into the furnace core tube and lower the oxygen concentration. No underlying problems occur.
また、炉芯管よりウェーハと共にパドルを引き出した際
、空気に接触することによりウェーハ表面にパーティク
ルの付着を生ずるが本発明では円筒状搬送用パイプ内壁
にガス供給パイプを設は吹出用の細孔より雰囲気ガスを
吹出させるので清浄雰囲気に保持することができるので
ウェーハ表面にパーティクルの付着は起らない。等の数
々の効果を得ることができる。Furthermore, when the paddle is pulled out from the furnace core tube together with the wafer, particles may adhere to the wafer surface due to contact with air. Since the atmospheric gas is blown out, a clean atmosphere can be maintained, so that particles do not adhere to the wafer surface. You can obtain many effects such as.
第1図(a)、(b)、(c)は本発明の一実施例“の
断面図及びA部の拡大側面図、第2図(a)、(b)は
従来のウェーハ熱処理装置の一例の断面図である。
1・・・円筒状搬送用パイプ、2・・・ガス供給パイプ
、3・・・細孔、4・・・遮板、5・・・車輪、6・・
・ガイド用保持片、7・・・パドル、8・・・シリコン
ウェーハ、9.14・・・ガス吹出矢印、10・・・引
き出し棒、11.13・・・ガス供給口、12・・・ガ
スカーテン、15・・・炉体、16・・・出入方向、1
7・・・雰囲気ガス、18・・・炉芯管、19・・・ボ
ート、20・・・渦。
代理人 弁理士 内 原 晋(「ハ、噌FIGS. 1(a), (b), and (c) are a sectional view and an enlarged side view of part A of one embodiment of the present invention, and FIGS. 2(a) and (b) are of a conventional wafer heat treatment apparatus. It is a sectional view of an example. 1... Cylindrical conveyance pipe, 2... Gas supply pipe, 3... Pore, 4... Shield plate, 5... Wheel, 6...
- Holding piece for guide, 7... Paddle, 8... Silicon wafer, 9.14... Gas blowing arrow, 10... Pull-out rod, 11.13... Gas supply port, 12... Gas curtain, 15...furnace body, 16...in/out direction, 1
7... Atmosphere gas, 18... Furnace core tube, 19... Boat, 20... Vortex. Agent: Susumu Uchihara, patent attorney
Claims (1)
該パドルを支持し挿入出を容易ならしむる複数個のガイ
ド用保持片と、該ガイド用保持片に設置された車輪と、
ウェーハ収容ボートの上部位置に設置され微小穴の設け
られたガス供給パイプと、パドルを引き出すための引き
出し棒と、該引き出し棒と連動する遮板と、上記部分を
覆い車輪が長手方向に挿入可能な複数の溝を有する円筒
状搬送用パイプとを備えたウェーハハンドリング装置と
、炉芯管出入口に設けられたガスカーテンとを有するこ
とを特徴とするウェーハ熱処理装置。a paddle for placing a boat that accommodates large-diameter wafers;
a plurality of guide holding pieces that support the paddle and facilitate insertion and removal; and wheels installed on the guide holding pieces;
A gas supply pipe installed in the upper part of the wafer storage boat and equipped with a microhole, a pull-out rod for pulling out the paddle, a shielding plate that interlocks with the pull-out rod, and a wheel that covers the above-mentioned parts so that it can be inserted in the longitudinal direction. A wafer heat treatment apparatus comprising: a wafer handling apparatus equipped with a cylindrical transport pipe having a plurality of grooves; and a gas curtain provided at an entrance and exit of a furnace core tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18035286A JPH0648678B2 (en) | 1986-07-30 | 1986-07-30 | Wafer heat treatment equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18035286A JPH0648678B2 (en) | 1986-07-30 | 1986-07-30 | Wafer heat treatment equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6336524A true JPS6336524A (en) | 1988-02-17 |
JPH0648678B2 JPH0648678B2 (en) | 1994-06-22 |
Family
ID=16081734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18035286A Expired - Lifetime JPH0648678B2 (en) | 1986-07-30 | 1986-07-30 | Wafer heat treatment equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0648678B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5582649A (en) * | 1996-02-29 | 1996-12-10 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer transfer apparatus for use in a film deposition furnace |
JP2010186778A (en) * | 2009-02-10 | 2010-08-26 | Koyo Thermo System Kk | Cooler, and cooling method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5698059B2 (en) * | 2011-04-08 | 2015-04-08 | 株式会社日立国際電気 | Substrate processing apparatus and solar cell manufacturing method |
-
1986
- 1986-07-30 JP JP18035286A patent/JPH0648678B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5582649A (en) * | 1996-02-29 | 1996-12-10 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer transfer apparatus for use in a film deposition furnace |
JP2010186778A (en) * | 2009-02-10 | 2010-08-26 | Koyo Thermo System Kk | Cooler, and cooling method |
Also Published As
Publication number | Publication date |
---|---|
JPH0648678B2 (en) | 1994-06-22 |
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