JPH0648678B2 - Wafer heat treatment equipment - Google Patents
Wafer heat treatment equipmentInfo
- Publication number
- JPH0648678B2 JPH0648678B2 JP18035286A JP18035286A JPH0648678B2 JP H0648678 B2 JPH0648678 B2 JP H0648678B2 JP 18035286 A JP18035286 A JP 18035286A JP 18035286 A JP18035286 A JP 18035286A JP H0648678 B2 JPH0648678 B2 JP H0648678B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- paddle
- core tube
- furnace core
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はウェーハ熱処理装置に関し、特に大口径ウェー
ハの熱拡散又はCVDに好適なウェーハ熱処理装置に関
する。The present invention relates to a wafer heat treatment apparatus, and more particularly to a wafer heat treatment apparatus suitable for thermal diffusion or CVD of large diameter wafers.
従来、この種のウェーハの熱拡散又はCVDのためのウ
ェーハ熱処理装置のウェーハ搬送技術は第2図に示すよ
うに、車輪5を有するパドル7上に載置された複数のボ
ート19上にシリコンウェーハ8を載置し、パドル7は
引き出し棒10とパドルを載置したパドル引き出し装置
21により構成され、炉芯管18にパドル引き出し装置
により出し入れされる。また、図において15は炉体、
18は炉芯管、29,26及び22,23,24は引き
出し棒及びパドル引き出し装置の動きを示す矢印であ
る。その動作はパドル引き出し装置が炉芯管内に入り炉
芯管内の所定の位置に到達すると下降し、パドルを引き
出し装置より下ろし、引き出し装置は引き出し棒と共に
炉芯管外に出される。なお、パドル引き出し装置はウェ
ーハの所定の位置より手前まで挿入される。2. Description of the Related Art Conventionally, as shown in FIG. 2, a wafer transfer technique of a wafer heat treatment apparatus for thermal diffusion or CVD of a wafer of this type has been shown in FIG. 2 in which silicon wafers are mounted on a plurality of boats 19 mounted on paddles 7 having wheels 5. 8 is placed, and the paddle 7 is composed of a pull-out rod 10 and a paddle pull-out device 21 on which the paddle is placed, and is taken in and out of the furnace core tube 18 by the paddle pull-out device. In the figure, 15 is a furnace body,
Reference numeral 18 is a furnace core tube, and reference numerals 29, 26 and 22, 23, 24 are arrows showing the movements of the drawing rod and the paddle drawing device. The operation is such that when the paddle drawing device enters the furnace core tube and reaches a predetermined position in the furnace core tube, the paddle draws down, lowers the paddle from the drawer device, and the drawer device is taken out of the furnace core tube together with the drawer rod. The paddle drawing device is inserted from a predetermined position on the wafer to the front side.
上述した従来のウェーハ搬送技術は炉芯管外部にウェー
ハを取り出すと空気中に直に接触することになり空気中
の浮遊塵に接触しパーティクル汚染が問題となってい
た。又、ウェーハ径が大きくなることにより大重量とな
ることによる機構部及びパドル引き出し装置の強度上の
問題、炉口より大量の空気が炉内に入り込み熱拡散時及
びCVD成長時多結晶シリコンコンタクト性に炉内の酸
素濃度の問題が大きなファクターとなり又空気が炉芯管
内に流れ込むことにより炉芯管内汚染という欠点があ
る。In the conventional wafer transfer technique described above, when a wafer is taken out of the furnace core tube, the wafer is directly contacted with the air, which is in contact with suspended dust in the air, causing particle contamination. Also, the problem of strength of the mechanical part and the paddle drawing device due to the fact that the wafer diameter becomes large due to the large diameter, a large amount of air enters the furnace from the furnace port, and the polycrystalline silicon contact property during thermal diffusion and CVD growth In addition, the problem of oxygen concentration in the furnace becomes a major factor, and air flows into the furnace core tube, so that the furnace core tube is contaminated.
本発明の目的は、大口径ウェーハになり大重量となって
も機構部及びパドル引き出し装置の強度上の問題がな
く、また炉口より大量の空気が入り込み炉内の酸素濃度
の増大により起る諸問題、並びに炉芯管よりウェーハと
共にパドルを引き出した際空気に接触しウェーハ表面に
パーティクルの付着を防止することが可能なウェーハ熱
処理装置を提供することにある。The object of the present invention is that there is no problem in the strength of the mechanical unit and the paddle drawing device even if the wafer becomes a large-diameter wafer and becomes heavy, and a large amount of air enters from the furnace port and the oxygen concentration in the furnace increases. It is an object of the present invention to provide a wafer heat treatment apparatus capable of preventing particles from adhering to the surface of the wafer by coming into contact with air when the paddle is pulled out from the furnace core tube together with the wafer.
本発明のウェーハ熱処理装置は、大口径ウェーハを収容
するボートを載置するパドルと、該パドルを支持し挿入
出を容易ならしむる複数個のガイド用保持片と、該ガイ
ド用保持片に設置された車輪と、ウェーハ収容ボートの
上部位置に設置され微小穴の設けられたガス供給パイプ
と、パドルを引き出すための引き出し棒と、該引き出し
棒と連動する遮板と、上記部分を覆い車輪が長手方向に
挿入可能な複数の溝を有する円筒状移動パイプとを備え
たウェーハハンドリング装置と、炉芯管出入口に設けら
れたガスカーテンとを有することによる構成される。The wafer heat treatment apparatus of the present invention includes a paddle for mounting a boat that accommodates large-diameter wafers, a plurality of guide holding pieces that support the paddle and facilitate insertion and removal, and are installed on the guide holding pieces. Wheel, a gas supply pipe provided at the upper position of the wafer accommodating boat and provided with minute holes, a pull-out rod for pulling out the paddle, a shield plate interlocking with the pull-out rod, and a wheel covering the above portion. The wafer handling device is provided with a cylindrical moving pipe having a plurality of grooves that can be inserted in the longitudinal direction, and a gas curtain provided at the inlet / outlet of the furnace core tube.
次に、本発明の実施例について図面を参照して説明す
る。第1図(a)〜(c)は本発明の一実施例の模式的
断面図であり、第1図(a)は炉芯管部、第1図(b)
はウェーハハンドリング装置、第1図(c)はA部の拡
大側面図である。Next, embodiments of the present invention will be described with reference to the drawings. 1 (a) to 1 (c) are schematic cross-sectional views of an embodiment of the present invention, in which FIG. 1 (a) is a furnace core tube portion, and FIG. 1 (b).
Is a wafer handling device, and FIG. 1 (c) is an enlarged side view of part A.
第1図(a)〜(c)において、円筒状移動パイプ1の
内部の上部にはガス供給パイプ2が設けられ、ガス供給
パイプ2には多数の細孔3が設けられガスがガス吹出矢
印9のように吹出すようにされている。シリコンウェー
ハ8を収容するボート19を載置するパドル7にはガイ
ド用保持片6、ガイド用保持片には車輪5が設置されて
いる。なお、円筒状移動パイプ1の下部にはパドル7の
車輪が長手方向に挿入出可能な複数の溝20が設けられ
ている。また10は引き出し棒であり、4は引き出し棒
と連動する遮板であり、以上でウェーハハンドリング装
置部を構成している。In FIGS. 1A to 1C, a gas supply pipe 2 is provided in an upper portion inside a cylindrical moving pipe 1, and a large number of pores 3 are provided in the gas supply pipe 2 so that a gas is blown out by a gas arrow. It is designed to blow out like 9. The paddle 7 on which the boat 19 for accommodating the silicon wafer 8 is mounted is provided with a guide holding piece 6, and a wheel is installed on the guide holding piece. A plurality of grooves 20 into which the wheels of the paddle 7 can be inserted and removed in the longitudinal direction are provided in the lower portion of the cylindrical moving pipe 1. Further, 10 is a pull-out rod, 4 is a shield plate interlocking with the pull-out rod, and the wafer handling device section is configured as described above.
一方、炉芯管部の15は炉体、18は炉芯管である。そ
して炉芯管の出入口部分にはガスカーテン12が設置さ
れ、ガス供給口13を通してガス11が導入され吹出ガ
ス14により流入空気を遮断するようにされている。On the other hand, 15 of the furnace core tube portion is a furnace body, and 18 is a furnace core tube. A gas curtain 12 is installed at the inlet / outlet portion of the furnace core tube so that the gas 11 is introduced through the gas supply port 13 and the inflowing air is blocked by the blown gas 14.
上記したウェーハ熱処理装置はボート19上に載置され
た複数のシリコンウェーハ8がパドル7上に載置され、
パドルは円筒状搬送用パイプ1の内部に収納され、その
円筒状搬送用パイプの上部には多数の細孔3を具備した
ガス供給パイプが設置され、その多数の細孔3より雰囲
気ガスを送気し円筒内部を雰囲気ガスに保持するように
されている。In the wafer heat treatment apparatus described above, a plurality of silicon wafers 8 placed on the boat 19 are placed on the paddle 7,
The paddle is housed inside a cylindrical transport pipe 1, and a gas supply pipe having a large number of pores 3 is installed above the cylindrical transport pipe, and an atmospheric gas is sent through the large number of pores 3. The inside of the evacuating cylinder is kept in the atmospheric gas.
また、パドルの後部には移動できる遮板が引き出し棒と
連動するよう設けられ雰囲気ガスの流出を防止してい
る。また、パドルを搬送する構造として円筒状片持梁構
造をとり重量物の搬送を可能とし、機構は前後(長手方
向)の移動のみでパドルの炉内への挿入を可能としてい
る。Further, a movable shield plate is provided at the rear portion of the paddle so as to interlock with the drawer rod to prevent outflow of atmospheric gas. In addition, a cylindrical cantilever structure is adopted as a structure for conveying the paddles, and heavy objects can be conveyed, and the mechanism allows the paddles to be inserted into the furnace only by moving back and forth (longitudinal direction).
又、炉芯管口には大気流入防止用の円筒状雰囲気ガスカ
ーテンを設け、パドルを載置した円筒状搬送用パイプが
炉内に挿出入する際先に説明した円筒状搬送用パイプの
内部の上部に設けられたガス供給パイプから吹出す雰囲
気ガスと二重の空気遮断が可能となる。In addition, a cylindrical atmosphere gas curtain for preventing the inflow of air is provided at the furnace core port, and when the cylindrical transfer pipe with the paddle is inserted into and removed from the furnace, the inside of the cylindrical transfer pipe described above It is possible to cut off the air twice from the atmospheric gas blown out from the gas supply pipe provided at the upper part of the.
以上の構成によりパドル上のボートに収容されたウェー
ハは円筒状搬送用パイプ内に入れられ雰囲気ガスに満さ
れた状態で炉芯管の定位置まで挿入され、その後、パド
ル,バドル上のボートに収容されたシリコンウェーハを
定位置に残置し他は炉芯管外に取り出される。処理後は
取り出した部分を雰囲気ガスで置換した後炉芯管内に入
れシリコンウェーハを酸素雰囲気に触れずに取出すこと
が出来る。With the above configuration, the wafers accommodated in the boat on the paddle are put into the cylindrical transfer pipe and inserted into the fixed position of the furnace core tube while being filled with the atmospheric gas. The accommodated silicon wafer is left in place and the others are taken out of the furnace core tube. After the treatment, the taken-out portion is replaced with an atmospheric gas and then placed in a furnace core tube so that the silicon wafer can be taken out without being exposed to the oxygen atmosphere.
以上説明したように本発明は、ウェーハサイズが大型に
なり大重量になった場合でも円筒片持梁構造にすること
により高純度耐熱材で十分に荷重に耐えることができ
る。As described above, according to the present invention, even if the wafer size becomes large and heavy, the cylindrical cantilever structure allows the high-purity heat-resistant material to sufficiently bear the load.
また、ウェーハサイズが大型になり炉芯管内が酸素濃度
異常となり易いが本発明では炉芯管出入口にガスカーテ
ンを設け炉芯管内に流入する空気を遮断し酸素濃度を下
げているのでこれに基く問題は発生しない。Further, since the wafer size becomes large and the oxygen concentration in the furnace core tube tends to become abnormal, in the present invention, a gas curtain is provided at the inlet / outlet of the furnace core tube to block the air flowing into the furnace core tube to reduce the oxygen concentration. No problem occurs.
また、炉芯管よりウェーハと共にパドルを引き出した
際、空気に接触することによりウェーハ表面にパーティ
クルの付着を生ずるが本発明では円筒状搬送用パイプ内
壁にガス供給パイプを設け吹出用の細孔より雰囲気ガス
を吹出させるので清浄雰囲気に保持することができるの
でウェーハ表面にパーティクルの付着は起らない。等の
数々の効果を得ることができる。Further, when the paddle is pulled out from the furnace core tube together with the wafer, particles are caused to adhere to the wafer surface by coming into contact with the air. Since the atmospheric gas is blown out, it can be kept in a clean atmosphere, so that particles do not adhere to the wafer surface. It is possible to obtain various effects such as.
第1図(a),(b),(c)は本発明の一実施例の断
面図及びA部の拡大側面図、第2図(a),(b)は従
来のウェーハ熱処理装置の一例の断面図である。 1……円筒状搬送用パイプ、2……ガス供給パイプ、3
……細孔、4……遮板、5……車輪、6……ガイド用保
持片、7……パドル、8……シリコンウェーハ、9,1
4……ガス吹出矢印、10……引き出し棒、11,13
……ガス供給口、12……ガスカーテン、15……炉
体、16……出入方向、17……雰囲気ガス、18……
炉芯管、19……ボート、20……溝。FIGS. 1 (a), (b) and (c) are sectional views of an embodiment of the present invention and an enlarged side view of part A, and FIGS. 2 (a) and 2 (b) are examples of conventional wafer heat treatment apparatus. FIG. 1 ... Cylindrical transfer pipe, 2 ... Gas supply pipe, 3
... pores, 4 shield plate, 5 wheels, 6 holding pieces for guides, 7 paddles, 8 silicon wafers, 9, 1
4 ... Gas blow-out arrow, 10 ... Drawer rod, 11, 13
...... Gas supply port, 12 ...... Gas curtain, 15 ...... Furnace body, 16 ...... Access direction, 17 ...... Atmosphere gas, 18 ......
Furnace core tube, 19 ... boat, 20 ... groove.
Claims (1)
るパドルと、該パドルを支持し挿入出を容易ならしむる
複数個のガイド用保持片と、該ガイド用保持片に設置さ
れた車輪と、ウェーハ収容ボートの上部位置に設置され
微小穴の設けられたガス供給パイプと、パドルを引き出
すための引き出し棒と、該引き出し棒と連動する遮板
と、上記部分を覆い車輪が長手方向に挿入可能な複数の
溝を有する円筒状搬送用パイプとを備えたウェーハハン
ドリング装置と、炉芯管出入口に設けられたガスカーテ
ンとを有することを特徴とするウェーハ熱処理装置。1. A paddle for mounting a boat for accommodating large-diameter wafers, a plurality of guide holding pieces for supporting the paddle and facilitating insertion / extraction, and wheels installed on the guide holding pieces. A gas supply pipe installed at the upper position of the wafer accommodating boat and provided with minute holes, a drawer rod for drawing out the paddle, a shield plate interlocking with the drawer rod, and a wheel covering the above portion in the longitudinal direction. A wafer heat treatment apparatus comprising: a wafer handling device having a cylindrical transfer pipe having a plurality of insertable grooves; and a gas curtain provided at a furnace core tube inlet / outlet port.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18035286A JPH0648678B2 (en) | 1986-07-30 | 1986-07-30 | Wafer heat treatment equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18035286A JPH0648678B2 (en) | 1986-07-30 | 1986-07-30 | Wafer heat treatment equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6336524A JPS6336524A (en) | 1988-02-17 |
JPH0648678B2 true JPH0648678B2 (en) | 1994-06-22 |
Family
ID=16081734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18035286A Expired - Lifetime JPH0648678B2 (en) | 1986-07-30 | 1986-07-30 | Wafer heat treatment equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0648678B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738262A (en) * | 2011-04-08 | 2012-10-17 | 株式会社日立国际电气 | Substrate processing apparatus, and transport device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5582649A (en) * | 1996-02-29 | 1996-12-10 | The United States Of America As Represented By The Secretary Of The Air Force | Wafer transfer apparatus for use in a film deposition furnace |
JP5612266B2 (en) * | 2009-02-10 | 2014-10-22 | 光洋サーモシステム株式会社 | Cooling system |
-
1986
- 1986-07-30 JP JP18035286A patent/JPH0648678B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102738262A (en) * | 2011-04-08 | 2012-10-17 | 株式会社日立国际电气 | Substrate processing apparatus, and transport device |
KR101379748B1 (en) * | 2011-04-08 | 2014-04-02 | 가부시키가이샤 히다치 고쿠사이 덴키 | Substrate processing apparatus, and transport device |
Also Published As
Publication number | Publication date |
---|---|
JPS6336524A (en) | 1988-02-17 |
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