JP2019110184A - Handling arm, transfer device, and local cleaning device - Google Patents

Abstract

To provide a technique capable of effectively preventing oxidation of a sample and adhesion of moisture to the sample during transport of the sample.SOLUTION: A handling arm includes substrate contacting portions 308 to 310 that support a substrate 208 and a plurality of gas discharge ports 302 to 304 that are located outside the substrate 208 when the substrate 208 is supported and are directed in different directions.SELECTED DRAWING: Figure 3

Description

  The present disclosure relates to a handling arm that transports a substrate, a transport device, and a local cleaning device.

  In a semiconductor factory, the semiconductor substrate is accommodated in a dedicated storage box filled with an inert gas in order to prevent foreign matter adhesion and oxidation on the semiconductor substrate (hereinafter, also simply referred to as a substrate). The storage box is opened by a substrate storage box opening / closing device having an inert gas purge mechanism after being installed in a manufacturing apparatus, an inspection apparatus, or the like. While the container box is open, inert gas is constantly purged to prevent oxidation. The substrate stored in the storage box is taken out by the transfer device. The transfer apparatus is an apparatus for transferring the semiconductor substrate toward the processing chamber in the air purification space. The above-mentioned storage box, substrate storage box opening and closing device, and transfer device are accommodated in a local cleaning device capable of generating a clean space.

  An apparatus for semiconductor manufacture, measurement, inspection, etc. processes a substrate transported by a transport apparatus mounted in the local cleaning apparatus. After the processing is completed, the substrate is returned to the storage box by the transfer device, the storage case is filled with the inert gas, and the next step is performed. As described above, in order to prevent adhesion of foreign matter to the semiconductor substrate and oxidation, processing for filling the storage box with an inert gas is automatically performed.

  The transfer device is required to grip the substrate so that no foreign matter adheres when transferring the substrate. Therefore, a method of vacuum-sucking the back surface of the substrate or a method of gripping the end, side surface, edge or the like of the substrate is adopted. In addition, when the transport apparatus transports the substrate, the inert gas is blown to prevent the contamination of the sample.

  Patent Document 1 discloses a processing system in which a gas supply port for supplying gas from the opening side is provided to a substrate held by a substrate transfer apparatus.

  Further, in Patent Document 2, a semiconductor manufacturing apparatus has “a gas blowing means for preventing adhesion of dust floating on a sample by blowing gas onto the sample in synchronization with the transfer position of the sample being transferred”. Is described.

  Further, in Patent Document 3, “a wafer holding unit for holding a wafer, and a gas discharge unit which moves integrally with the wafer holding unit and discharges an inert gas in the vicinity of the wafer held by the wafer holding unit. Wafer transfer apparatus is disclosed.

JP, 2006-351864, A Unexamined-Japanese-Patent No. 2006-216710 JP-A-9-55418

  By the way, in the apparatus which manufactures a semiconductor, in the substrate storage box or the substrate storage box opening / closing device, the oxidation prevention is aimed at using an inert gas (for example, nitrogen), but air flows in the air purification space inside the local cleaning device. Therefore, when the substrate is transported using the transport apparatus, the substrate may be exposed to air, and the substrate may be oxidized during transport.

  The above-mentioned Patent Documents 1 to 3 describe that the inert gas is supplied from the proximal end of the handling arm when the substrate is transported. However, since the transfer device for transferring the semiconductor substrate is required to move the arm at high speed to improve the productivity, the inert gas may not reach the substrate, and there may be portions where the oxidation and the adhesion of water can not be prevented.

  The present disclosure has been made in view of the above-described problems, and provides a technique capable of effectively preventing oxidation of a sample and adhesion of moisture to the sample during transportation of the sample.

  In order to solve the above-mentioned subject, a substrate contact portion which supports a substrate, a plurality of gas discharge ports which are located outside the substrate when the substrate is supported and which are directed in different directions, and a plurality of the gases A handling arm comprising: a plurality of flow channels having an outlet at an open end.

  In addition, a substrate contact portion for supporting the substrate, a plurality of gas discharge ports located on the outside of the substrate when the substrate is supported and facing in different directions, and the plurality of gas discharge ports are opened. A transport device connected to a handling arm including a plurality of flow path tubes, a guide rail along which the transport device moves, a valve provided to the plurality of flow path tubes, and the valve open There is provided a local cleaning apparatus comprising: a gas supply unit that releases an inert gas from at least one of the plurality of gas discharge ports in a state; and a control unit that controls the operation of the transfer device and the gas supply unit. .

  According to the present disclosure, it is possible to effectively prevent the oxidation of the sample and the adhesion of moisture to the sample when the sample is transported. Problems, configurations, and effects other than the above are clarified by the description of the embodiments below.

It is side sectional drawing of a local cleaning apparatus. It is top sectional drawing of a local cleaning apparatus. It is upper surface sectional drawing of the handling arm of 1st Embodiment. It is side surface sectional drawing of the handling arm of 1st Embodiment. It is a flowchart of the process which a control part performs. It is a flowchart of the process which a control part performs. It is a flowchart of the process which a control part performs. It is a figure which shows a mode that the handling arm of 2nd Embodiment supports a board | substrate. It is sectional drawing of the handling arm of 2nd Embodiment. It is sectional drawing of the handling arm of 3rd Embodiment. It is sectional drawing of the handling arm of 4th Embodiment.

  Hereinafter, embodiments of the present disclosure will be described based on the drawings. Note that the embodiments of the present disclosure are not limited to the embodiments described later, and various modifications can be made within the scope of the technical idea thereof. The same reference numerals are given to the corresponding parts of the respective drawings used for describing the respective embodiments to be described later, and the overlapping description will be omitted.

First Embodiment
FIG. 1 is a side sectional view of the local cleaning device 101. As shown in FIG. In the local cleaning device 101, a transport device 103 provided with a handling arm is mounted. The transfer device 103 moves along the guide rails in the space pressurized by the fan filter unit 102 to transfer the sample (substrate). In the local cleaning device 101, the clean air from the fan filter unit 102 installed at the upper part increases the internal pressure in the device, thereby blocking the entry of air from the outside and maintaining a clean space. Further, the clean air supplied by the fan filter unit 102 is exhausted by the exhaust port 104 installed on the lower surface of the local cleaning device 101 to form a downflow. The transfer device 103 includes a drive mechanism for operating the handling arm, and transfers the substrate in the clean space as described above.

  The parts included in the local cleaning device 101 and the transfer device 103 are controlled by a control unit included in the local cleaning device 101. The control unit includes a recording unit that records a program for controlling the ejection of an inert gas, which will be described later, and a processor that executes the program.

  FIG. 2 is a top sectional view of the local cleaning device 101. As shown in FIG. As shown in FIG. 2, the local cleaning apparatus 101 transports the substrate, transports the substrate storage box filled with the inert gas, and opens and closes the substrate storage box opening / closing devices 204 to 206, and the control unit 209. And a prealignment device 210. The control unit 209 controls the operation of each device provided in the local cleaning device 101. The substrate storage box opening / closing devices 204 to 206 each have an inert gas release mechanism, and the inside of the substrate storage box is filled with the inert gas to prevent the oxidation of the substrate 208. The transfer device 103 is configured to be able to move to the positions 201 to 203 on the guide rails, and drives the handling arm 207 at each position to store and take out the substrate 208. The taken-out substrate 208 is corrected to a predetermined position and direction by the pre-alignment device 210, and then transported to the semiconductor manufacturing device and the inspection device.

  When the transfer apparatus 103 takes out the substrate 208 from the substrate storage box, the substrate storage box opening / closing devices 204 to 206 open the substrate storage box while supplying the inert gas from the inert gas release mechanism to the substrate storage box. After the substrate 208 is taken out of the substrate storage box, it is transported by the transport device 103 in the local cleaning device 101 in which the air is flowing.

[Configuration of handling arm]
FIG. 3 is a top cross-sectional view of the handling arm 207 of the first embodiment. As shown in FIG. 3, the handling arm 207 has a bifurcated shape as it goes from the proximal side to the distal side (direction from X1 to X2 in the drawing). The handling arm 207 has substrate contacts 308-310 at the bifurcated branch and near the center. The substrate contact portions 308 to 310 of the first embodiment form one open end of the flow path tube connected to the suction device, and the substrate 208 is sucked and transported from the substrate contact portions 308 to 310.

  Further, the handling arm 207 is provided with gas discharge ports 302 to 304 at positions on the tip end side of the branched arm and the base end side of the arm and which become the outside of the substrate when the substrate is mounted. . The gas outlets 302 to 304 are directed in different directions, and the arrows shown in the figure indicate flows 305 to 307 of the inert gas. The inert gas is jetted from a plurality of directions so as to cover the entire substrate.

  FIG. 4 is a side sectional view of the handling arm 207 according to the first embodiment. In FIG. 4, the gas outlet 302 will be described as an example. As shown in FIG. 4, the gas outlet 302 has two outlets 302a and 302b, where the outlet 302a is at approximately the same height as the substrate and the outlet 302b is at a lower position than the substrate. . As shown in FIG. 4, the inert gas released from the outlet 302 a covers the upper side of the substrate 208, and the inert gas released from the outlet 302 b covers the lower side of the substrate 208. When the configuration of the gas discharge port 302 is as described above, both surfaces of the substrate 208 can be prevented from oxidation. In addition to covering the surface of the substrate 208, the inert gas also plays a role of blowing off dust and the like attached to the substrate 208. The position of the outlet 302 a may be higher than the substrate 208. In this case, it is possible to reduce the diffusion of the inert gas covering the surface of the substrate 208 by the air flowing downward from the fan filter unit 102.

  Each of the discharge ports 302a and 302b forms one open end of a flow path pipe connected to a gas supply unit (not shown) for supplying an inert gas, and a valve provided in the flow path pipe is open Inert gas from the gas supply unit. The control unit 209 adjusts the degree of opening and closing of the valve to adjust the amount of inert gas released from the gas discharge port 302.

  As described above, a flow path pipe is provided inside the substrate contact portion 308 and is connected to a suction device (not shown). As the suction device performs the suction operation, the substrate 208 is sucked by the substrate contact portion 308 and held by the handling arm 207.

[Operation of transport device]
As described above, the transfer device 103, the substrate storage box opening and closing device 205, and the like are controlled by the control unit 209 provided in the local cleaning device 101. Hereinafter, a flow until the transport apparatus 103 takes out the substrate 208 from the substrate storage box and transports the substrate 208 to the processing chamber will be described.

  First, the transfer device 103 moves on the guide rails to the position (for example, 203) of the substrate storage box in which the substrate 208 to be taken out is stored. Subsequently, the substrate storage box opening / closing device 205 opens the substrate storage box while releasing the inert gas by the inert gas release mechanism, and the transport device 103 extends the handling arm 207 to grip the target substrate 208. Thereafter, the transfer device 103 folds the handling arm 207 and moves along the guide rails to the pre-alignment device 210, and places the substrate 208 on the pre-alignment device 210. The transfer device 103 transfers the substrate 208 to the processing chamber after the substrate 208 is corrected to the correct position by the pre-alignment device 210.

  The operation of the control unit 209 from when the transfer apparatus 103 takes out the substrate 208 to transfer it to the processing chamber will be described below. For example, the control unit 209 opens the valve immediately after the transfer apparatus 103 takes out the substrate 208 from the substrate storage box and the substrate storage box opening / closing apparatus 205 closes the substrate storage box, and starts supply of inert gas. The reason for starting the supply of inert gas by opening the valve immediately after the substrate storage box opening / closing device 205 closes the substrate storage box is to prevent dust etc. from entering the substrate storage box due to the release of the inert gas. is there.

  The control unit 209 causes the inert gas to be released toward the substrate 208 from the plurality of gas discharge ports 302 to 304 provided in the handling arm 207 until the transfer apparatus 103 transfers the substrate 208 to the processing chamber. Control. Since the inert gas is released toward the substrate 208 from a plurality of directions, the inert gas can cover the entire substrate 208 even when the transfer device 103 moves at high speed. Therefore, even when the transfer device 103 moves in the air-filled local cleaning device 101, the exposure of the substrate 208 to air can be reduced and oxidation and moisture adhesion of the substrate 208 can be prevented. In addition, when the pre-alignment apparatus 210 adjusts the position of the substrate 208 before being transferred to the processing chamber, the control unit 209 may open the valve to continue supplying the inert gas, or the valve may be closed to inactivate the gas. The supply of gas may be stopped.

FIG. 5 is a flowchart of processing executed by the control unit 209. Each step will be described below.
(S501)
When the transfer apparatus 103 takes out the substrate 208 from the substrate storage box, the process proceeds to the process of S502. If the substrate 208 has not been taken out of the substrate storage box, the process of S501 is repeated.
(S502)
The controller 209 opens the valve to release the inert gas.
(S503)
When the transfer device 103 ends the transfer of the substrate 208, the control unit 209 ends the process. If the transport of the substrate 208 has not ended, the processing of S503 is executed again.

  The local cleaning device 101 that executes the above process can effectively prevent the oxidation of the sample and the adhesion of moisture to the sample.

  The control unit 209 is a valve (gas discharge port) capable of releasing the inert gas from the front (upstream) to the rear (downstream) in the traveling direction while the transport device 103 moves in the local cleaning device 101. It is possible to select and open the valve so as to release the inert gas only from the gas discharge port. In other words, the control unit 209 may select a valve that opens and closes in accordance with the moving direction of the transfer device 103, and may change the gas release port that releases the inert gas. In this way, the amount of inert gas used when transporting the substrate 208 can be reduced. In addition, when the inert gas is released to the substrate 208 in the direction opposite to the transport direction of the substrate 208, the inert gas may be diffused without covering the substrate 208, but the inert gas may be diffused upstream to downstream. By releasing it, this can be prevented.

  Alternatively, the control unit 209 adjusts the degree of opening and closing of the valve such that the amount of inert gas released from the selected gas outlet is greater than the amount of inert gas released from the other gas outlets. You may In this way, the substrate 208 can be covered with the inert gas more effectively.

  The control unit 209 may open the valve and release the inert gas from the gas discharge ports 302 to 304 when the handling arm 207 of the transfer device 103 does not grip the substrate 208. In this way, dust deposited on the substrate contacts 308 to 310 supporting the substrate 208 and on the handling arm 207 can be removed. The inert gas is preferably released before the next substrate 208 is removed from the storage box after the substrate 208 has been transported. In that case, foreign matter removal can be performed without reducing the throughput of the apparatus.

  The control unit 209 may adjust the degree of opening and closing of the valve in accordance with the moving speed or the operating speed of the transfer device 103 to change the release amount or speed of the inert gas. For example, as the transport device 103 moves faster, the control unit 209 opens the valve more and releases more inert gas. In this way, the inert gas can be prevented from diffusing and becoming unable to cover the substrate 208.

  Further, the control unit 209 may change the degree of opening and closing of the valve between when the transfer device 103 is gripping the substrate 208 and when the transport device 103 is not gripping the substrate 208. For example, when the control unit 209 does not hold the substrate 208, the control unit 209 opens the valve to release more inert gas than when holding the substrate 208. That is, it is possible to obtain a desired effect by changing the supply amount of the inert gas depending on the purpose, such as dusting the substrate contact portions 308 to 310 and the handling arm 207.

  The control unit 209 releases the inert gas in a state where the handling arm 207 does not grip the substrate 208 when the number of times of transfer of the substrate 208 by the transfer device 103 reaches a prescribed number, and foreign matter attached to the handling arm 207 You may blow it off.

FIG. 6 is a flowchart of processing executed by the control unit 209. Below, each process which the control part 209 performs is described.
(S601)
The control unit 209 counts the number of times the transfer device 103 transferred the substrate 208.
(S602)
If the number of times the transport apparatus 103 has transported the substrate 208 has reached the specified number, the control unit 209 proceeds to the process of S603. If the number of times the transport apparatus 103 has transported the substrate 208 has not reached the specified number, the control unit 209 returns to the process of S601.
(S603)
The control unit 209 opens the valve to discharge the inert gas from the gas discharge port of the handling arm 207, blows off foreign matter, and returns to the process of S601.

  The transport apparatus 103 performing the above operation transports the substrate 208 a prescribed number of times, releases the inert gas without gripping the substrate 208, and blows away foreign substances attached to the handling arm 207. By doing this, it is possible to periodically clean the handling arm 207. The timing at which the control unit 209 opens the valve may be timing at which the operation time of the transfer device 103 has reached a predetermined time, not the number of times the substrate 208 has been transferred.

  The control unit 209 may increase the air volume of the fan filter unit 102 when the valve is opened and the foreign matter attached to the handling arm 207 is blown away.

FIG. 7 is a flowchart of processing executed by the control unit 209. Each step will be described below.
(S701)
If the transport of the substrate 208 by the transport apparatus 103 is completed, the process proceeds to the process of S702. If the transfer of the substrate 208 is not completed, the process of S701 is repeated.
(S702)
The control unit 209 increases the air volume of the fan filter unit 102.
(S703)
The controller 209 opens the valve to release the inert gas from the gas discharge port.

  The local cleaning device 101 performing the above process can discharge the foreign matter blown away by the inert gas to the outside of the device without winding it up into the local cleaning device 101.

Second Embodiment
The handling arm 207 of the first embodiment has a plurality of substrate contact portions 308 to 310 connected to a suction device, and the substrate 208 is sucked and transported to the substrate contact portions 308 to 310. In contrast, the handling arm 207 of the second embodiment has a plurality of substrate contacts arranged to surround the edge, end or side of the substrate 208, the substrate 208 having an edge, end or side The substrate contact portion grips and transports the substrate.

  FIG. 8 is a view showing how the handling arm 500 of the second embodiment supports the substrate 208. As shown in FIG. The handling arm 500 of the second embodiment is the same as the first embodiment in that the handling arm 500 has a shape that branches in a Y-shape from the proximal end toward the distal end. However, the handling arm 500 of the second embodiment is different from the first embodiment in that it has a substrate support 600 having two branches 600 a and 600 b extended to surround the substrate 208 at the proximal end. ing.

  Substrate contacting portions are provided at the tip of the handling arm 500 and at the tip and center of the substrate support 600. The substrate 208 is carried by gripping the back surface of the substrate 208 near the edge thereof at the substrate contact portion. In the vicinity of the substrate contact portion, a plurality of gas discharge ports 501 to 505 that form one open end of the flow path pipe are provided. The flow path pipe is provided with a valve, and the other open end is connected to a gas supply unit for supplying an inert gas. The gas discharge ports 501 to 505 are provided at positions outside the substrate 208 when the substrate 208 is gripped, and are directed, for example, toward the center of the substrate 208.

  In FIG. 8, the directions in which the inert gas released from the gas discharge ports 501 to 505 is diffused are indicated by arrows 506 to 510. Similarly to the first embodiment, the handling arm 500 according to the second embodiment covers the substrate 208 with the inert gas by releasing the inert gas from the gas discharge ports 501 to 505, and oxidizes the moisture of the substrate 208 and the water content. It is possible to prevent adhesion.

  FIG. 9 is a cross-sectional view of the handling arm 500 of the second embodiment. The cross section of the gas discharge port 501 is illustrated by FIG. As shown in FIG. 9, the handling arm 500 has a substrate contact portion 601 provided with a gas discharge port 501, and the substrate 208 has an inclination near the edge or in the vicinity of the outer peripheral portion that the substrate contact portion 601 has. It is supported by the connected surface.

  Further, as shown in FIG. 9, the gas discharge port 501 has two openings 501a and 501b. The opening 501 a is provided at a position higher than the upper surface of the substrate 208 when gripping the substrate 208, and the opening 501 b is provided at a position lower than the lower surface of the substrate 208. As shown in FIG. 9, since the surface of the substrate contact portion 601 supporting the substrate 208 is inclined, the substrate contact portion 601 supports the substrate 208 at one point. Therefore, almost all of the lower surface of the substrate 208 is in a non-contact state, the inert gas released from the opening 501 b covers almost all of the lower surface of the substrate 208, and the region where oxidation and moisture adhesion of the substrate 208 can be prevented becomes large. As shown in FIG. 9, when the shape of the edge of the substrate 208 is a bowl shape, the substrate contact portion 601 is a substrate by making the inclination angle of the substrate contact portion 601 different from the inclination angle of the crucible. We can support 208 at one point.

  As in the first embodiment, the control unit 209 controls the opening and closing of the valve provided in the flow channel having the gas discharge ports 501 to 505 at the opening end. The opening and closing control of the valve by the control unit 209 is the same as that of the first embodiment.

  In the above description, the cross-sectional view of the gas discharge port 501 has been described as an example, but the gas discharge ports 502 to 505 have the same configuration and a substrate contact portion.

  The handling arm 500 of the second embodiment having the above configuration can prevent the oxidation of the substrate 208 and the adhesion of water when the transport device 103 transports the substrate 208 as in the first embodiment. In addition, since the distance between the gas discharge ports 501 to 505 and the edge of the substrate 208 is close as compared with the first embodiment, the entire substrate 208 can be covered with a small amount of inert gas more efficiently. In addition, since the distance between the substrate contact portion and the gas discharge ports 501 to 505 is close compared to the first embodiment, foreign matter attached to the substrate contact portion with a smaller amount of gas when the substrate 208 is not gripped Can pay. Furthermore, in the case of the handling arm 500 according to the second embodiment, since there are more gas outlets compared to the first embodiment, the inert gas is produced even when the handling arm 500 moves in a complicated manner. Can cover the substrate 208.

Third Embodiment
FIG. 10 is a cross-sectional view of the handling arm 700 of the third embodiment. FIG. 10 illustrates a cross section of one gas discharge port 701 among the plurality of gas discharge ports provided. The handling arm 700 of the third embodiment is different from the first embodiment in that the gas discharge port 701 has only one opening. As shown in FIG. 10, the gas discharge port 701 is provided at a position substantially at the same height as the substrate 208 and facing the upper side of the substrate 208. In such a case, the upper surface side of the substrate 208 can be covered with the inert gas, and the amount of the inert gas released to the lower surface side of the substrate 208 can be saved.

Fourth Embodiment
FIG. 11 is a cross-sectional view of the handling arm 800 of the fourth embodiment. FIG. 11 illustrates the cross section of one gas discharge port 801 among the plurality of gas discharge ports provided. The handling arm 800 of the fourth embodiment is different from the second embodiment in that the gas discharge port 801 has only one opening. As shown in FIG. 11, the gas discharge port 801 is provided at a position higher than the substrate 208 and in a direction parallel to the substrate 208. In such a case, the upper surface side of the substrate 208 can be covered with the inert gas, and the amount of the inert gas released to the lower surface side of the substrate 208 can be saved.

  The present invention is not limited to the embodiments described above, but includes various modifications. For example, the embodiments described above are described in detail in order to explain the present invention in an easy-to-understand manner, and are not necessarily limited to those having all the configurations described. Also, part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment. In addition, with respect to a part of the configuration of each embodiment, it is possible to add, delete, and replace other configurations.

101: Local cleaning device 102: Fan filter unit 103: Transport device 104: Exhaust port 201 to 203: Moving position of transport device 204 to 206: Substrate Storage box opening / closing device, 207 ... handling arm, 208 ... substrate, 209 ... control unit, 210 ... pre-alignment device, 301 ... handling arm of a method of gripping the back surface of the substrate, 302 ~ 304: gas discharge port, 305 to 307: flow of inert gas, 308 to 310: substrate contact portion, 401: handling of a method of gripping an edge or side / edge of a substrate Arm, 402 to 406: Substrate contact portion, 407 to 408: Flow of inert gas, 501: Gas discharge port, 601: Substrate contact portion

Claims (11)

A substrate contact portion for supporting the substrate;
A plurality of gas outlets located on the outside of the substrate when the substrate is supported and directed in different directions;
A plurality of flow path tubes having the plurality of gas discharge ports at the opening end;
Handling arm with The handling arm according to claim 1, wherein
The plurality of gas discharge ports are arranged to face the substrate when the substrate is supported.
Handling arm. The handling arm according to claim 1, wherein
Each of the plurality of gas discharge ports is provided at least one of a position higher than the substrate, a position at the same height as the substrate, and a position lower than the substrate when the substrate is supported.
Handling arm. A handling arm according to claim 1;
A drive mechanism for driving the handling arm;
A flow path pipe connected to the handling arm such that inert gas can be supplied from the plurality of gas discharge ports by opening and closing a valve;
A transport device comprising: A plurality of substrate contact portions for supporting the substrate, a plurality of gas discharge ports located on the outside of the substrate when the substrate is supported and facing in different directions, and a plurality of the gas discharge ports at the open end A transfer device connected to a handling arm comprising:
A guide rail along which the transport device moves;
A valve provided to the plurality of flow path pipes, and a gas supply unit which discharges an inert gas from at least one of the plurality of gas discharge ports when the valve is open;
A control unit that controls the operation of the transfer device and the valve;
A local cleaning device comprising: The local cleaning device according to claim 5, wherein
The transfer device moves on the guide rail according to an instruction of the control unit,
At least one of the plurality of gas discharge ports is a direction in which the inert gas is discharged from the front to the rear in the advancing direction of the transfer device when the transfer device moves the guide rail, and And disposed so as to be positioned forward of the substrate in the traveling direction,
Local cleaning device. 7. The local cleaning device according to claim 6, wherein
The control unit discharges the inert gas from a gas discharge port in a direction in which the inert gas is discharged from the front to the rear in the traveling direction when the transport device moves the guide rail. Let's control the valve,
Local cleaning device. The local cleaning device according to claim 5, wherein
The control unit releases the inert gas from the plurality of gas discharge ports when the number of operations of the handling arm reaches a specified number, or when the operation time of the handling arm reaches a predetermined time. To control the valve as
Local cleaning device. The local cleaning device according to claim 5, wherein
It further comprises a fan filter unit for pressurizing the space in which the transfer device is built,
The control unit increases the air volume of the fan filter unit when releasing the inert gas from the plurality of gas discharge ports.
Local cleaning device. The local cleaning device according to claim 5, wherein
The control unit controls the valve such that the inert gas is released from at least one of the plurality of gas discharge ports after the transfer device has transferred the substrate.
Local cleaning device. The local cleaning device according to claim 5, wherein
Each of the plurality of gas discharge ports is provided at least one of a position higher than the substrate, a position at the same height as the substrate, and a position lower than the substrate when the substrate is supported.
Local cleaning device.

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