JPS6335108B2 - - Google Patents

Info

Publication number
JPS6335108B2
JPS6335108B2 JP55106110A JP10611080A JPS6335108B2 JP S6335108 B2 JPS6335108 B2 JP S6335108B2 JP 55106110 A JP55106110 A JP 55106110A JP 10611080 A JP10611080 A JP 10611080A JP S6335108 B2 JPS6335108 B2 JP S6335108B2
Authority
JP
Japan
Prior art keywords
electrode
insulating layer
unit
mos transistor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55106110A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5731168A (en
Inventor
Kyohiro Kawasaki
Takeshi Ishihara
Masazo Yoshama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10611080A priority Critical patent/JPS5731168A/ja
Publication of JPS5731168A publication Critical patent/JPS5731168A/ja
Publication of JPS6335108B2 publication Critical patent/JPS6335108B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP10611080A 1980-07-31 1980-07-31 Semiconductor device Granted JPS5731168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10611080A JPS5731168A (en) 1980-07-31 1980-07-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10611080A JPS5731168A (en) 1980-07-31 1980-07-31 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5731168A JPS5731168A (en) 1982-02-19
JPS6335108B2 true JPS6335108B2 (enExample) 1988-07-13

Family

ID=14425330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10611080A Granted JPS5731168A (en) 1980-07-31 1980-07-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5731168A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5657083A (en) * 1979-10-15 1981-05-19 Suwa Seikosha Kk Liquid crystal display unit
JPS56122089A (en) * 1980-02-29 1981-09-25 Fujitsu Ltd Display unit

Also Published As

Publication number Publication date
JPS5731168A (en) 1982-02-19

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