JPS6334632B2 - - Google Patents

Info

Publication number
JPS6334632B2
JPS6334632B2 JP56044939A JP4493981A JPS6334632B2 JP S6334632 B2 JPS6334632 B2 JP S6334632B2 JP 56044939 A JP56044939 A JP 56044939A JP 4493981 A JP4493981 A JP 4493981A JP S6334632 B2 JPS6334632 B2 JP S6334632B2
Authority
JP
Japan
Prior art keywords
type
layer
photovoltaic
light
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56044939A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57159070A (en
Inventor
Hajime Ichanagi
Nobuhiko Fujita
Hiroshi Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP56044939A priority Critical patent/JPS57159070A/ja
Publication of JPS57159070A publication Critical patent/JPS57159070A/ja
Publication of JPS6334632B2 publication Critical patent/JPS6334632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
JP56044939A 1981-03-26 1981-03-26 Manufacture of photo electromotive force element Granted JPS57159070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56044939A JPS57159070A (en) 1981-03-26 1981-03-26 Manufacture of photo electromotive force element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56044939A JPS57159070A (en) 1981-03-26 1981-03-26 Manufacture of photo electromotive force element

Publications (2)

Publication Number Publication Date
JPS57159070A JPS57159070A (en) 1982-10-01
JPS6334632B2 true JPS6334632B2 (en, 2012) 1988-07-11

Family

ID=12705447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56044939A Granted JPS57159070A (en) 1981-03-26 1981-03-26 Manufacture of photo electromotive force element

Country Status (1)

Country Link
JP (1) JPS57159070A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0370535U (en, 2012) * 1989-11-14 1991-07-16
JPH0370534U (en, 2012) * 1989-11-14 1991-07-16

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167264A (ja) * 1984-09-10 1986-04-07 Fuji Xerox Co Ltd 光電変換素子およびその製造方法
JPS6199387A (ja) * 1984-10-22 1986-05-17 Fuji Xerox Co Ltd 光電変換素子およびその製造方法
JPS62101083A (ja) * 1985-10-28 1987-05-11 Kanegafuchi Chem Ind Co Ltd 半導体装置の製造方法
JPS62189764A (ja) * 1986-02-15 1987-08-19 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS62189766A (ja) * 1986-02-15 1987-08-19 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS63274184A (ja) * 1987-05-06 1988-11-11 Hitachi Ltd 光電変換素子およびその製造方法
JP2008115460A (ja) 2006-10-12 2008-05-22 Canon Inc 半導体素子の形成方法及び光起電力素子の形成方法
CN106328722A (zh) * 2016-09-28 2017-01-11 西南科技大学 一种低串联电阻S‑Si半导体合金膜太阳能电池及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154781A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0370535U (en, 2012) * 1989-11-14 1991-07-16
JPH0370534U (en, 2012) * 1989-11-14 1991-07-16

Also Published As

Publication number Publication date
JPS57159070A (en) 1982-10-01

Similar Documents

Publication Publication Date Title
JP2695585B2 (ja) 光起電力素子及びその製造方法、並びにそれを用いた発電装置
US4433202A (en) Thin film solar cell
US4239554A (en) Semiconductor photoelectric conversion device
US5705828A (en) Photovoltaic device
US4728370A (en) Amorphous photovoltaic elements
US7879644B2 (en) Hybrid window layer for photovoltaic cells
US4496788A (en) Photovoltaic device
JP2589462B2 (ja) 光電装置
JP2951146B2 (ja) 光起電力デバイス
JP2006080557A (ja) 高水素希釈低温プラズマ蒸着によって製造されるアモルファスシリコン系素子の向上せしめられた安定化特性
JP2846651B2 (ja) 光起電力装置
AU2011219223B2 (en) Thin-film photoelectric conversion device and method for production thereof
CN101237000A (zh) 基于薄膜硅的多结光伏器件的纳米晶硅和非晶锗混合型吸收层
JPH04130671A (ja) 光起電力装置
IE54573B1 (en) Improved back reflector system and devices utilizing same
JPS6334632B2 (en, 2012)
JP2719036B2 (ja) 非晶質光電変換装置およびその製造方法
JP2614561B2 (ja) 光起電力素子
JP4110718B2 (ja) 多接合型薄膜太陽電池の製造方法
JP2669834B2 (ja) 積層型光起電力装置
JP3197673B2 (ja) 光起電力装置
JPS6225275B2 (en, 2012)
JPH04249374A (ja) 光電変換素子
JPS6152992B2 (en, 2012)
JP3197674B2 (ja) 光起電力装置