JPS633400B2 - - Google Patents

Info

Publication number
JPS633400B2
JPS633400B2 JP58053618A JP5361883A JPS633400B2 JP S633400 B2 JPS633400 B2 JP S633400B2 JP 58053618 A JP58053618 A JP 58053618A JP 5361883 A JP5361883 A JP 5361883A JP S633400 B2 JPS633400 B2 JP S633400B2
Authority
JP
Japan
Prior art keywords
circuit
bit string
voltage
test cell
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58053618A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59180896A (ja
Inventor
Koji Ueno
Toshio Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58053618A priority Critical patent/JPS59180896A/ja
Publication of JPS59180896A publication Critical patent/JPS59180896A/ja
Publication of JPS633400B2 publication Critical patent/JPS633400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0751Error or fault detection not based on redundancy
    • G06F11/0754Error or fault detection not based on redundancy by exceeding limits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • Logic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP58053618A 1983-03-31 1983-03-31 プログラマブル素子 Granted JPS59180896A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58053618A JPS59180896A (ja) 1983-03-31 1983-03-31 プログラマブル素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053618A JPS59180896A (ja) 1983-03-31 1983-03-31 プログラマブル素子

Publications (2)

Publication Number Publication Date
JPS59180896A JPS59180896A (ja) 1984-10-15
JPS633400B2 true JPS633400B2 (enrdf_load_stackoverflow) 1988-01-23

Family

ID=12947890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053618A Granted JPS59180896A (ja) 1983-03-31 1983-03-31 プログラマブル素子

Country Status (1)

Country Link
JP (1) JPS59180896A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6134800A (ja) * 1984-07-25 1986-02-19 Nec Corp 読出し専用半導体記憶装置

Also Published As

Publication number Publication date
JPS59180896A (ja) 1984-10-15

Similar Documents

Publication Publication Date Title
KR960002014B1 (ko) 결점을 수리하는 용장메모리셀 어레이를 포함하는 반도체 기억장치
EP0055129B1 (en) Semiconductor memory device
US4365319A (en) Semiconductor memory device
KR900008637B1 (ko) 여분의 회로부를 가지는 반도체 메모리 장치
US4392211A (en) Semiconductor memory device technical field
US5471429A (en) Burn-in circuit and method therefor of semiconductor memory device
JPH0437520B2 (enrdf_load_stackoverflow)
JP2773271B2 (ja) 半導体記憶装置
EP0435287B1 (en) Semiconductor memory device
US4752914A (en) Semiconductor integrated circuit with redundant circuit replacement
JPH05282898A (ja) 半導体記憶装置
US11972828B2 (en) Repair circuit, memory, and repair method
US4586170A (en) Semiconductor memory redundant element identification circuit
EP0032015A2 (en) Field programmable device with test-bits
EP0183323A2 (en) Method and structure for disabling and replacing defective memory in a prom device
US5058071A (en) Semiconductor memory device having means for repairing the memory device with respect to possible defective memory portions
US4783781A (en) Semiconductor memory device having redundancy configuration with read circuit for defective memory address
US6393378B2 (en) Circuit and method for specifying performance parameters in integrated circuits
JP2005100542A (ja) 半導体記憶装置とそのテスト方法
JPH0793997A (ja) スタティック型半導体記憶装置
JPS633400B2 (enrdf_load_stackoverflow)
US20220139479A1 (en) Memory test circuit
US5786702A (en) Method for detecting defects in integrated-circuit arrays
US6345013B1 (en) Latched row or column select enable driver
JPS59162699A (ja) リ−ド・オンリ・メモリ