JPS6331552B2 - - Google Patents

Description

[Detailed description of the invention]

The present invention relates to a method for manufacturing a photoconductive member that is effective for forming a photoconductive layer on a predetermined support using electric discharge, such as glow discharge or arc discharge. For example, a raw material for forming a photoconductive layer composed of an amorphous material containing silicon atoms as a matrix is introduced in a gaseous state into a deposition chamber that can be reduced in pressure, and is then deposited on a predetermined support using plasma generated by glow discharge. When trying to form a photoconductive layer having desired properties, especially in the case of a large-area layer, the layer thickness and electrical, optical,
Increasing the layer formation speed while ensuring uniformity of physical properties such as photoelectric properties and uniformity of quality is
This method is much more difficult than the usual vacuum evaporation method. For example, SiH ₄ or Si ₂ H ₆ or SiF ₄ , SiF ₄ and
Amorphous silicon containing at least either hydrogen atoms or halogen atoms (X) (hereinafter a _- Si (H, ) When attempting to utilize the electrical properties of this layer, the electrical properties of this layer are highly dependent on the layer deposition rate and support temperature during layer formation. In order to achieve uniform electrical properties and improve layer quality, it is necessary to reduce the layer deposition rate and increase the support temperature. On the other hand, from the point of view of improving productivity and mass production, it is conceivable to increase the discharge power and gas flow rate in order to increase the layer deposition rate; The layer formed when the flow rate is increased has a remarkable tendency to deteriorate the electrical, optical and photoconductive properties, and to increase the location dependence of these properties, making it difficult to form a layer of good quality. The current situation is extremely difficult. Therefore, in order to industrialize the production of photoconductive members having photoconductive layers made of amorphous materials with silicon atoms as the matrix, it is necessary to improve the layer quality, which is closely related to photosensitivity, repeated use characteristics, and use environment characteristics. It is necessary to improve productivity and mass production, including reproducibility, by maintaining uniformity and uniformity of characteristics. The present invention has been made in view of the above points, and is extremely superior in productivity and mass production, and can improve electrical, optical and photoconductive properties, layer quality, and layer quality over a large area. The object of the present invention is to propose a method for manufacturing a photoconductive member that can easily obtain a photoconductive layer with extremely good bulk density and filling properties. Furthermore, even if the layer has a large area, the physical properties and layer thickness are substantially uniform over the entire area, and the use environment characteristics, particularly photoconductive properties under humid and high temperature conditions, are improved. Another object of the present invention is to propose a method for manufacturing a photoconductive member, in which a layer having excellent electrical properties can be formed economically with high efficiency and speed with good reproducibility. The method for manufacturing a photoconductive member of the present invention involves introducing a raw material for forming a photoconductive layer in a gaseous state into a deposition chamber that has been reduced to a desired pressure, and causing a discharge in the gas atmosphere of the raw material. In the method for manufacturing a photoconductive member in which a photoconductive layer is formed on a support for forming a photoconductive layer, the raw material is a substance containing an oxygen atom as a constituent atom and has the general formula SinH ₂ n+ ₂ (however, n is a positive integer) ... (A) and the general formula SimHlXk (where m, k are positive integers, l is 0 or a positive integer, l + k = 2m + 2, X represents a halogen atom) ... (B) and a compound represented by the general formula (A)
Or, the ratio of each of the compounds represented by (B) introduced into the deposition chamber is 1 vol% of the compound with a higher order m than the lowest order compound in n or m. The method is characterized in that the raw material is introduced into the deposition chamber in the manner described above. The method for producing a photoconductive member of the present invention having such characteristics has significantly higher efficiency and speed than conventional methods, has excellent physical properties, optical properties, electrical properties, and photoelectric properties, and has excellent physical properties, optical properties, electrical properties, and photoelectric properties. The layer is dense and has a high degree of layer filling, has excellent usage environment characteristics under humid and high temperature conditions, and has uniform characteristics and layer thickness over the entire area of the formed layer, and has a large area. can be economically and easily formed. In particular, when the photoconductive member obtained by the manufacturing method of the present invention is applied to electrophotography, its properties can be utilized to the maximum extent possible. In the present invention, when the compounds represented by the general formulas (A) and (B) are introduced into the deposition chamber for forming the photoconductive layer, from the viewpoint of ease of production and transportability of raw materials, Since it is necessary to introduce the material in a gaseous state, a material that is gaseous at room temperature and pressure, or at least easily gasified under layer-forming conditions, is used. The compound represented by the general formula (A) or (B) in the present invention is used as a starting material for producing Si as a constituent atom constituting the photoconductive layer to be produced. Specifically, the compounds represented by the general formula (A) include SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ ,
Gaseous or gasifiable silanes such as Si ₅ H ₁₂ , Si ₆ H ₁₄ , Si ₇ H ₁₆ , Si ₈ H ₁₈ and the like can be effectively used. Examples of the compound represented by general formula (B) include
SiX ₄ , Si ₂ X ₆ , Si ₃ X ₈ , SiHX ₃ , SiH ₂ X ₂ , SiH ₃ X
(X is F, Cl, Br, I), specifically
SiF ₄ , SiCl ₄ , SiBr ₄ , SiI ₄ , Si ₂ F ₆ , Si ₂ Cl ₆ ,
Si ₂ Br ₆ , Si ₂ I ₆ , Si ₃ F ₈ , Si ₃ Cl ₈ , SiHF ₃ , SiHCl ₃ ,
_SiHBr3 , _SiHI3 , _{SiH2F2 , SiH2Cl2} , _{SiH3F ,}
SiH ₃ Cl and the like are effective examples. In one of the preferred embodiments of the present invention, the compound represented by the general formula (A) and the compound represented by the general formula (B) are combined into at least two kinds of compounds represented by either of the general formulas. This raw material is introduced into a deposition chamber in a gaseous state, and a discharge such as glow discharge or arc discharge is generated in the gas atmosphere of this raw material. By this process, a photoconductive layer is formed on a support. In the present invention, when at least two kinds of compounds represented by the general formula (A) are selected to constitute the raw material, among the selected compounds, the compound in which n is higher is Si ₂ H ₆ , Si ₃ H ₈ and Si ₄ H ₁₀ are mentioned as preferred ones, and these can be used in combination, or a compound containing at least one of these as the main component and n is 5 or more can be mixed. It is also possible to form a compound in which n is higher order. In particular, when n constitutes a higher-order compound, either one or both of Si ₃ H ₈ or Si ₄ H ₁₀ is used, or either or both of these are the main components, and n is the lowest compound, Si ₂ H ₆
A mixed system using the following is more preferable. Further, next to this mixed system, SiH ₄ is used instead of Si ₂ H ₆ as a compound where n is the lowest order, and Si 2 H 6 , Si ₃ H ₈ , Si ₃ H ₈ , as compounds where n is higher order.
A mixed system in which at least one of Si ₄ H ₁₀ is selected and used as the main component is preferred. When at least two types of compounds represented by the general formula (B) are selected to constitute the raw material, among the selected compounds, m is a higher-order compound such as Si ₂ F ₆ , Preferred examples include Si ₂ Cl ₆ , Si ₂ Br ₆ , and Si ₃ F ₈ , and these may be used in combination, or with at least one of them as the main component and a high m content. It is also possible to form a mixture of compounds in which m is higher by mixing the following other compounds. Especially when m constitutes a higher-order compound,
Either one or both of Si ₂ F ₆ , Si ₂ Cl ₆ , Si ₂ Br ₆ , or both of these as main components, and SiF ₄ and SiCl ₄ are used as compounds where m is high or low. The mixed system used is more preferred. In the present invention, as a raw material for forming a photoconductive layer, one compound is selected from each of the compounds represented by the above general formula (A) or (B), or at least one compound from either one and the other compound is selected. The ratio of introducing these into the deposition chamber is usually 1 vol% of the compound with n or m higher than the lowest n or m compound. Discharge is caused in a mixed gas atmosphere configured as described above, and the above ratio relationship is preferably 5 vol% or more, and optimally 10 vol%. It is. As for the upper limit of the above ratio relationship, the optimal value is determined as desired depending on the type of compound constituting the raw material of the mixed system, but it is usually 99 vol%, preferably 97 vol%. It is desirable that this is the case. In the present invention, a substance containing oxygen atoms as a constituent atom, which is one of the substances constituting the raw material for forming the photoconductive layer, is used to introduce oxygen atoms into the photoconductive layer to be formed. Those which are normally in a gaseous state or which can be easily gasified are used. Substances that can be effectively used in the present invention as raw material gases for introducing oxygen atoms include oxygen (O ₂ ), ozone (O ₃ ),
For example, disiloxane H ₃ SiOSiH ₃ , trisiloxane whose constituent atoms are Si, O, and H.
Examples include lower siloxanes such as H ₃ SiOSiH ₂ OSiH ₃ , and oxygen (O ₂ ) is particularly effective. In the present invention, when the oxygen atom-containing substance is introduced into the deposition chamber, the proportion of the compounds represented by general formulas (A) and (B) to the total volume is usually 8 vol% or less, preferably 6 vol. % or less, preferably 1 vol% or less. In the present invention, each of the three or more compounds selected from the compounds represented by the above general formulas (A) and (B) and the oxygen atom-containing substance is prepared in advance by the above-mentioned compounds when introduced into the deposition chamber. They may be mixed at the same ratio and then introduced into the deposition chamber, or each may be introduced into the deposition chamber separately at the above ratio. In the present invention, specific examples of compounds selected from the above general formulas (A) and (B) and used in combination of three or more are shown in Table 1, Table 2, and Table 3.
Shown in the table. Tables 1 and 2 list examples in which at least two compounds are selected from the compounds represented by the general formula (A) and at least one compound is selected from the compounds represented by the general formula (B). In these combination examples, the compounds represented by the general formula (B) are preferably SiF ₄ and SiCl 4 as compounds where m is the lowest order, and SiCl ₄ as compounds where m is higher order. , Si ₂ Cl ₆ , Si ₂ Br ₆ , and Si ₃ F ₈ . In addition, oxygen (O ₂ ) is an oxygen atom-containing substance.
can be mentioned as a preferable combination partner substance. Table 3 lists examples in which at least two compounds are selected from the compounds represented by the general formula (B) and at least one type is selected from the compounds represented by the general formula (A). In these combination examples, compounds represented by the general formula (A) are preferably used as compounds where n is the lowest order, such as SiH ₄ , Si ₂ H ₆ , and compounds where n is higher order. As, a compound where n is 2 or more, especially,
Compounds in which n is 2, 3, 4, or 5 are mentioned. or,
As the oxygen atom-containing substance, oxygen (O ₂ ) can be mentioned as a preferable combination partner substance. Among the combination examples shown in Tables 1 and 2, combination examples 1 to 27 are more preferred, and particularly combination examples 17 to 27 show more significant effects. Among the combination examples shown in Table 3, combination examples 1 to 10 are more preferred, especially combination example 1.
-3, 5-8, more significant effects are shown.

【table】

【table】

【table】

【table】

【table】

[Table] In the present invention, a mixed gas system of raw materials is used as an atmospheric gas or other raw materials for layer formation in order to obtain a predetermined concentration and gas pressure in a deposition chamber for forming a photoconductive layer. A mixture of gases may be used. The atmospheric gas used in the present invention is one that does not have an adverse effect on the photoconductive layer to be formed and is composed of atoms that are one of the constituent atoms constituting the layer, or one that is completely inert. will be adopted. Substances that can become such atmospheric gases include:
Rare gases such as He, Ne, Ar, etc., fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF ₃ ,
Gaseous or gasifiable interhalogen compounds such as BrF ₅ , BrF ₃ , IF ₇ , IF ₅ , ICl, IBr, HF, HCl,
Mention may be made of hydrogen halide gases such as HBr and _H2 . Among these substances that serve as atmospheric gases, rare gases, H ₂ and the like can be used as particularly effective. Examples of other raw material gases for layer formation include substances that are in a gaseous state or can be easily gasified and that contain impurity atoms as constituent elements that control the conductivity type of the photoconductive layer to be formed. etc. can be mentioned. In the method for manufacturing a photoconductive member of the present invention, when forming photoconductive layers with the same characteristics and layer quality,
Compared to conventional methods, layers can be formed at a much higher speed and economically, and the temperature of the support and the discharge power can be significantly increased. For example, in order to obtain a photoconductive layer having properties and layer quality that achieve the object of the present invention, the support temperature can be set to 150° C. or higher, and the discharge power can be set to 100 W or higher. Next, the present invention will be further explained by giving typical examples of photoconductive members formed by the photoconductive member manufacturing method of the present invention. FIG. 1 is a schematic configuration diagram schematically shown to explain an example of the configuration of a typical photoconductive member obtained by the present invention. The photoconductive member 100 shown in FIG. 1 can be applied to electrophotography or imaging devices, and includes an intermediate layer 102 provided as necessary on a support 101 for the photoconductive member; It has a layered structure composed of a photoconductive layer 103 provided according to the manufacturing method of the invention. The support 101 may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, Al, Cr, Mo, Au, Ir,
Examples include metals such as Hb, Ta, V, Ti, Pt, and Pd, and alloys thereof. As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side. For example, if it is glass, its surface may be NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
If it is conductive treated by providing a thin film of Pd, In ₂ O ₃ , SnO ₂ , ITO (In ₂ O ₃ +SnO ₂ ), or if it is a synthetic resin film such as polyester film, NiCr, Al, Ag, Pb, Zn, Ni, Au, Cr,
The surface is treated with a metal such as Mo, Ir, Nb, Ta, V, Ti, or Pt by vacuum evaporation, electron beam evaporation, sputtering, etc., or laminated with the metal, and the surface thereof is conductive. The shape of the support may be any shape such as cylindrical, belt-like, plate-like, etc., and the shape is determined as desired, but for example,
If the photoconductive member 100 of FIG. 1 is used as an electrophotographic image forming member, it is preferably in the form of an endless belt or a cylinder for continuous high-speed copying. The intermediate layer 102 is made of, for example, a non-photoconductive amorphous material containing silicon atoms, carbon atoms, nitrogen atoms, or oxygen atoms as a matrix, and optionally containing hydrogen atoms or halogen atoms (X),
This effectively prevents the inflow of carriers into the photoconductive layer 103 from the side of the support 101 and prevents photocarriers generated in the photoconductive layer 103 by the irradiation of electromagnetic waves and moving toward the side of the support 101. Photoconductive layer 1
03 side to the support body 101 side. To form the intermediate layer 102, the photoconductive layer 103
The glow discharge method is adopted because the process can be carried out continuously until the formation of and mix it with the support 101.
The intermediate layer 102 may be formed on the support 101 by introducing it into a vacuum deposition chamber equipped with a gas atmosphere, and generating a glow discharge in the introduced gas atmosphere to form a gas plasma. Starting materials that can be effectively used as raw material gas for forming the intermediate layer 102 include SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ , Si ₄ H ₁₀ , etc., which have Si and H as constituent atoms. Silicon hydrides such as silanes, nitrogen (N ₂ ), ammonia (NH ₃ ), hydrazine (H ₂ NNH ₂ ), azica hydrogen containing N or N and H as constituent atoms (HN ₃ ), gaseous or gasifiable nitrogen such as ammonium azide (NH ₄ N ₃ ), nitrogen compounds such as nitrides and azides, C
and H as constituent atoms, for example, saturated hydrocarbons having 1 to 5 carbon atoms, ethylene hydrocarbons having 2 to 5 carbon atoms,
Examples of saturated hydrocarbons such as acetylenic hydrocarbons having 2 to 4 carbon atoms include methane (CH ₄ ), ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), and n-butane (n- C ₄ H ₁₀ ), pentane (C ₅ H ₁₂ ), ethylene hydrocarbons include ethylene (C ₂ H ₄ ), propylene (C ₃ H ₆ ), butene-1 (C ₄ H ₈ ), butene-2 ( _{C4H8 )} ,
Isobutylene (C ₄ H ₈ ), pentene (C ₅ H ₁₀ ), acetylene hydrocarbons include acetylene (C ₂ H ₂ ), methylacetylene (C ₃ H ₄ ), butyne (C ₄ H ₆ ), etc. In addition to these, for example, oxygen (O ₂ ), ozone (O ₃ ), carbon monoxide (CO), carbon dioxide (CO ₂ ), nitric oxide (NO), nitrogen dioxide (NO ₂ ), monoxide. Examples include dinitrogen (N ₂ O). These starting materials for forming the intermediate layer 102 include predetermined atoms as constituent atoms of the intermediate layer 1 to be formed.
02, they are appropriately selected and used during layer formation. Materials other than those mentioned above constituting the intermediate layer 102 include electrically insulating metal oxides. Examples of the electrically insulating metal oxide constituting the intermediate layer 102 include TiO ₂ , Ce ₂ O ₃ , ZrO ₂ , HfO ₂ ,
_GeO2 , CaO _, BeO, _P2O5 , _{Y2O3 , Cr2O3 ,}
Preferred examples include Al ₂ O ₃ , MgO, MgO.Al ₂ O ₃ , and SiO _2.MgO . Two or more of these may be used in combination to form the intermediate layer 102. Further, the intermediate layer 102 can also be provided by using aluminum or an aluminum alloy as the support 101 and treating the surface of the aluminum support or aluminum alloy support with alumite or boehmite. The thickness of the intermediate layer 102 is usually 30
It is desirable that the thickness be ~1000 Å, preferably 50-600 Å. The photoconductive layer 103 is made of an amorphous material a-Si having the semiconductor properties shown below, having silicon atoms as its base material, and containing at least either H or X.
It is composed of (H, X). P-type a-Si (H, X): Contains only acceptor. Or one that contains both a donor and an acceptor and has a high acceptor concentration (Na). N-type a-Si (H, X): Contains only a donor. Or one that contains both donor and acceptor and has a high concentration of donor (Nd). i-type a-Si; (H, X)...NaNdO or NaNd. The thickness of the photoconductive layer 103 is appropriately determined as desired in accordance with the purpose of the application, such as a reading device, a solid-state imaging device, or an electrophotographic image forming member. The thickness of the photoconductive layer 103 shown in FIG. 1 is determined as appropriate in relation to the thickness of the intermediate layer 102 so that the functions of the photoconductive layer 103 and the functions of the intermediate layer 102 are effectively utilized. In general, it is preferable that the layer thickness be several hundred to several thousand times or more thicker than the layer thickness of the intermediate layer 102. A specific value is usually 1 to 100μ, preferably 2 to 50μ. The amount of H contained in the photoconductive layer of the photoconductive member shown in FIG. 1 is usually 1 to 40 atomic %, preferably 5 to 30 atomic %. In order to make the photoconductive layer 103 n-type or p-type, the layer to be formed is doped with an n-type impurity, a p-type impurity, or both impurities while controlling the amount thereof during layer formation. done by. The impurities doped into the photoconductive layer include elements of group A of the periodic table as p-type impurities;
For example, preferred examples include B, Al, Ga, In, Tl, etc., and preferred n-type impurities include elements of group A of the periodic table, such as N, P, As, Sb, Bi, etc. Among them, B, Ga,
P, Sb, etc. are optimal. In the present invention, the amount of impurity doped into the photoconductive layer 103 to have a desired conductivity type is as follows:
It is determined as appropriate depending on the desired electrical and optical properties, but in the case of impurities in group A of the periodic table, 3
Doping may be carried out in an amount range of not more than ×10 ^-2 atomic %, and in the case of impurities in group A of the periodic table, doping may be carried out in an amount range not more than 5 × 10 ^-3 atomic %. In order to dope impurities into the photoconductive layer 103, a raw material for impurity introduction may be introduced in a gaseous state into the deposition chamber together with the main raw material for forming the photoconductive layer 103 during layer formation. As the raw material for introducing such impurities, those that are in a gaseous state at room temperature and normal pressure, or that can be easily gasified at least under layer-forming conditions, are employed. Specifically, starting materials for introducing such impurities include PH ₃ , P ₂ H ₄ , PF ₃ , PF ₅ , PCl ₃ , AsH ₃ ,
AsF ₃ , AsF ₅ , ASCl ₃ , SbH ₃ , SbF ₃ , SbF ₅ ,
_BiH3 , _{BF3 , BCl3} , _BBr3 , _B2H6 , _{B4H10 ,}
Examples include B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H ₁₀ , B ₆ H ₁₂ , AlCl ₃ and the like. Example 1 Using the apparatus shown in FIG. 2 installed in a completely shielded clean room, an electrophotographic image forming member was prepared by the following operations. A molybdenum (substrate) 202 0.5 mm thick and 10 cm square whose surface was cleaned was firmly fixed to a fixing member 203 at a predetermined position in the deposition chamber 201 . Targets 205 and 206 are polycrystalline high purity silicon (99.999
%) on high-purity graphite (99.999%). The substrate 202 has a fixing member 203
It is heated with an accuracy of ±0.5°C by a heating heater 204 inside. Temperature was measured directly on the backside of the substrate by a thermocouple (alumel-chromel). Next, after confirming that all valves in the system are closed, the main valve 231 is fully opened to create a vacuum of about 5×10 ^-7 torr (at this time, all valves in the system are closed). , auxiliary valve 229 and outflow valves 224, 225, 2
28 is opened and the flow meters 237, 238, 24
After the inside of 1 is sufficiently deaerated, the outflow valve 224,
225, 228 and auxiliary valve 229-1, 229
-2 was closed. Open the valve 218 of the Ar (99.999% purity) gas cylinder 213, and
After the reading of 6 is adjusted to 1Kg/cm ² , the inflow valve 223 is opened, and then the outflow valve 2 is opened.
28 was gradually opened to allow Ar gas to flow into chamber 201. Pirani gauge 242 indicates 5x
The outflow valve 228 is gradually opened until the pressure reaches 10 ^-4 torr, and after the flow rate stabilizes in this state, the main valve 231 is gradually closed, and the indoor pressure is reduced to 1×
The aperture was narrowed down to 10 ^-2 torr. After opening the shutter 208 and confirming that the flow meter 241 was stable, the high frequency power source 243 was turned on, and 13.56 MHz, 100 W AC power was input between the targets 205, 206 and the fixed member 203. Under these conditions, the layers were formed while performing matching so that stable discharge could continue. Discharge was continued in this manner for 1 minute to form an intermediate layer with a thickness of 100 Å. After that, turn off the high frequency power supply 243,
The discharge was temporarily stopped. Subsequently, outflow valve 2
28, close the inflow valve 223, and close the main valve 2
31 fully open to remove the gas in the chamber 201, and
Vacuum was applied to 10 ^-7 torr. Thereafter, the input voltage to the heater 204 was increased, and the input voltage was varied while detecting the substrate temperature until it stabilized at a constant value of 300°C. After that, auxiliary valves 229-1, 229-2,
Next, the outflow valve 228 was fully opened, and the inside of the flow meter 241 was also sufficiently degassed and vacuumed. Auxiliary valve 229-1, 229-2, outflow valve 228
After closing the Si ₂ H ₆ gas containing 10 vol ppm of B ₂ H ₆ (hereinafter abbreviated as B ₂ H ₆ /Si ₂ H _6. Purity 99.999%), the valve 214 of the cylinder 209, SiH ₄ gas (purity 99.999
%) Valve 215 of cylinder 210, valve 216 of SiF ₄ gas (99.999% purity) cylinder 211, valve 217 of O ₂ gas (99.999% purity) cylinder 212
Open the outlet pressure gauges 232, 233, 234,
Adjust the pressure of 235 to 1Kg/cm ² and open the inflow valve 21.
9, 220, 221, 222, 223 gradually open and flow meters 237, 238, 239, 2
40,241 B ₂ H ₆ /Si ₂ H ₆ gas, SiH ₄ gas,
SiF ₄ gas, O ₂ gas, and Ar gas were each introduced. Subsequently, the outflow valves 224, 225, 226, 22
7,228 gradually open, then auxiliary valve 22
9-1 and 229-2 were gradually opened. At this time
Inflow valves 219, 220, 221, so that the ratio of B ₂ H ₆ /Si ₂ H ₆ gas flow rate, SiH ₄ gas flow rate, SiF ₄ gas flow rate, and Ar gas flow rate is 28:1:3:68.
223 and the O ₂ gas flow rate is B ₂ H ₆ /
It was adjusted to 0.1 vol% of the sum of the Si ₂ H ₆ gas flow rate, SiH ₄ gas flow rate, and SiF ₄ gas flow rate. Next, Pirani Gauge 2
While paying close attention to the reading of 42, turn on the auxiliary valve 229-
Adjust the opening of 1,229-2 so that the inside of chamber 201 is 1.
Auxiliary valve 229-1, 2 until ×10 ^-2 torr
I opened 29-2. After the internal pressure of the chamber 201 became stable, the main valve 231 was gradually closed and the opening was throttled until the reading on the Pirani gauge 242 reached 0.2 torr. After confirming that the gas inflow is stable and the internal pressure is stable, close the shutter 208 (which also serves as an electrode), then turn on the high frequency power supply 243 to connect the electrode 203 and the shutter 208.
High frequency power of 13.56MHz was applied to generate glow discharge in the chamber 201, resulting in an input power of 100W.
After continuing the glow discharge for one hour to form a photoconductive layer, the heating heater 204 is turned off, the high frequency power supply 243 is also turned off, and the substrate temperature reaches 100°C.
After waiting for the temperature to reach ℃, the outflow valves 224, 22
5, 226, 227, 228 and inflow valve 21
9, 220, 221, 222, 223 are closed, the main valve 231 is fully opened, and the inside of the chamber 201 is 10 ^-5
After reducing the pressure to below torr, the main valve 231 was closed, and the inside of the chamber 201 was brought to atmospheric pressure by the leak valve 230, and the substrate was taken out. In this case, the total thickness of the layer formed was approximately 28μ. The image forming member obtained in this way was installed in a charging exposure experiment equipment, and the voltage was 6.0KV.
Corona charging was performed for 0.2 seconds, and a light image was immediately irradiated. The optical image is created using a tungsten lamp light source.
A light intensity of 1.5 lux sec was irradiated through a transmission type test chart. Immediately thereafter, a good toner image was obtained on the surface of the component by cascading a charged developer (including toner and carrier) onto the surface of the component. When the toner image on the member was transferred onto transfer paper using 5.0KV corona charging, a clear, high-density image with excellent resolution and good gradation reproducibility was obtained. Next, the image forming member was corona charged at 5.5 KV for 0.2 seconds using a charging exposure experiment device, and immediately subjected to image exposure at a light intensity of 1.5 lux sec, after which a charging developer was immediately applied to the member. When it was cascaded onto the surface and then transferred and fixed onto transfer paper, an extremely clear image was obtained. From this result and the previous results, it was found that the electrophotographic image forming member obtained in this example had no dependence on charging polarity and had the characteristics of a bipolar image forming member. Example 2 Ar gas cylinder 213 containing 0.2 vol% of O ₂
The gas cylinder contains an O ₂ gas cylinder 212, the Si ₂ H ₆ gas cylinder contains 10 vol ppm of B ₂ H ₆ , the Si ₂ H ₆ gas cylinder 209 contains 100 vol ppm of B ₂ H ₆ ,
After forming an intermediate layer on a molybdenum substrate under the same operation and conditions as in Example 1 except for replacing the Si ₂ H ₆ gas cylinder with the gas type and relative flow rate values shown in Table 3, Example A photoconductive layer was formed on the intermediate layer using the same operations and conditions as in Example 1. When a toner image was formed in the same manner as in Example 1 using the image forming member thus obtained, Sample A showed that the combination of 5.5KV corona charging, image exposure, and chargeable toner was better. A toner image was obtained. On the other hand, for sample B, a better toner image was obtained with the combination of 6.0KV corona charging, image exposure, and chargeable toner.

[Table] Example 3 After forming an intermediate layer on a molybdenum substrate under the same operations and conditions as in Example 1, the types of gases (the number of cylinders in Figure 2) were changed as shown in Table 4 (the number of cylinders in Figure 2 was increased as necessary). A photoconductive layer was formed on the intermediate layer under the same operation and conditions as in Example 1 using the relative flow rates. The productivity (deposition rate) of the imaging member thus obtained is
As a result of examining both characteristics (image quality in high temperature and high humidity, repeated operation), in order to achieve the object of the present invention, it is necessary to use either n or m of the compound represented by the above general formula in the mixed raw material gas. The photoconductive layer is made such that 1 vol% of a compound with m higher than the lowest order compound is contained, and the value of the O ₂ gas flow rate is 8 vol% or less of the raw material gas flow rate shown by the above general formula. It was found that it was necessary to form a

【table】

【table】

【table】 [Brief explanation of the drawing]

FIG. 1 is a schematic block diagram for explaining the layer structure of an embodiment of a photoconductive member produced by the manufacturing method of the present invention, and FIG. 2 is an apparatus for embodying the manufacturing method of the present invention. It is a typical explanatory view showing an example. 100...Photoconductive member, 101...Support, 102
...barrier layer, 103...amorphous layer.

Claims (1)

[Scope of Claims] 1. A photoconductive layer is formed by introducing a raw material for forming a photoconductive layer in a gaseous state into a deposition chamber that has been reduced to a desired pressure, and causing a discharge in the gas atmosphere of the raw material. In a method for manufacturing a photoconductive member in which a photoconductive layer is formed on a support for formation, the raw material is a substance containing an oxygen atom as a constituent atom and has the general formula SinH ₂ n+ ₂ (where n is a positive integer)...( Consisting of a compound represented by A) and a compound represented by the general formula SimHlXk (where m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom)...(B) and the general formula (A)
Or, the ratio of each of the compounds represented by (B) introduced into the deposition chamber is 1 vol% or more of a compound with a higher order m than that of the lowest order compound in n or m. A method for manufacturing a photoconductive member, characterized in that the raw material is introduced into the deposition chamber so that the following is achieved.