JPS63308992A - Manufacture of optical semiconductor element - Google Patents
Manufacture of optical semiconductor elementInfo
- Publication number
- JPS63308992A JPS63308992A JP14659087A JP14659087A JPS63308992A JP S63308992 A JPS63308992 A JP S63308992A JP 14659087 A JP14659087 A JP 14659087A JP 14659087 A JP14659087 A JP 14659087A JP S63308992 A JPS63308992 A JP S63308992A
- Authority
- JP
- Japan
- Prior art keywords
- jig
- cleavage
- bars
- film
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000003287 optical effect Effects 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 7
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 13
- 230000007017 scission Effects 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔願業上の第１」用分野〕
本発明（；元午害体素子の１ｑ造力法に係り、特にヘキ
囲面から元を取り出−ｆ＃専体レーザのヘキ開面のバッ
／ベー／ヨノ換形成力法に関する。[Detailed Description of the Invention] [First Field of Application] The present invention (; relates to the 1q force generation method of a primary harmonic body element, in particular, extracting the element from the hexagonal surface -f# dedicated laser This paper relates to the force method for converting the hexagonal surface of the hexagonal surface.
〔従来の技術７１
従来のこの（壇のバ、７ベー７−Ｉン膜の杉成刀法に（
す、ヘキ開バーのヘキ開面を上に向け、バッンベーノヨ
ン膜を付Ｎさせようとするこのヘキ開面以外てこの膜が
付層しないようにして、固定した治具が使われているつ
じかし、ヘキ開バーの装着をやり易くする為に、ヘギ［
シミバーの表面の間さより、治具の表面の簡さが＾くな
ってしまう。あるい（丁、数本寸とめて装置したヘキ開
バーのヘキ開面の１（ｈさか一致せず、ヘキ開バーの表
面が凹凸を持つ等の問題かある。[Conventional technology 71 In the conventional method of this (dan-no-ba, 7-bai, 7-in membrane)
The opening surface of the opening bar should be facing upwards, and a fixed jig should be used to prevent this film from being deposited on any areas other than this opening surface. However, in order to make it easier to install the heki opening bar, the heki [
The surface of the jig becomes easier than the space between the surfaces of the stain bars. Or, there may be problems such as the cleavage surfaces of several cleavage bars that are set to different sizes do not match, and the surface of the cleavage bar has unevenness.
Ａｉ＋述したｖＥ米のパｙ／ベー／ヨン刀法でｉ工、ヘ
キ開バー、及び治具の表面の腐さが不ぞろいである為、
表面の凹凸の′＃響を受け、パラ／べ一／ヨン膜の付漸
速兆が面内で変動し、これがため＋１ａ厚の不為−性？
生じるという欠点がある。Ai + Due to uneven rot on the surfaces of the i-work, opening bar, and jig in the vE rice pie/bey/yon sword method mentioned above,
Due to the effects of surface irregularities, the deposition velocity of the para/base/yon film fluctuates within the plane, and this is due to the +1a thickness irregularity?
There is a disadvantage that it occurs.
本発明の目的（ゴ、前記欠点を解決し、ハ、／べ一）−
、ン膜の膜厚が均一になるようにする元手さ８体素子の
製造方法を提供することにある。Objectives of the present invention (go) to solve the above-mentioned drawbacks,
An object of the present invention is to provide a method for manufacturing an 8-element element in which the thickness of the film is uniform.
〔問題点を解決するだめの手段Ｊ
本究明の構成１′！、成長装置内のベース板：・τ、核
数の光半導体素子を載置し、前記素子のヘキ開面にバッ
／ベーノヨン膜を形成する光半導体素子の製造方法にお
いて、前記素子のヘキ開面が回一平面上に位置するよう
に、前記素子を固定する治具を使用することを特徴とす
る。[Means to solve the problem J Structure of this investigation 1'! , a base plate in a growth apparatus: A method for manufacturing an optical semiconductor device in which an optical semiconductor device having the number of nuclei as τ is placed, and a bat/benoyon film is formed on the hexagonal surface of the device. The method is characterized in that a jig is used to fix the element so that the element is located on the same plane.
〔実施１シリ」
欠に本発明について図面を参照しながら詳細に説明する
。[Embodiment 1] The present invention will be briefly described in detail with reference to the drawings.
第１図、第２図、第３図（１本発明の一実施例の光半導
体素子の製造方法を工程順に示す斜視図である。本夾施
例は、レーザ・ダイｊ−ドのヘキ開面に、スパッタによ
り、二Ｗ Ｉｃ ／リコン（ＳｉＱ□）を成長させる場
合について開示する。まず、第１図に示すように、磨き
カフス等の平依１上に、レーザタ′イオードのヘキ開バ
ー２のヘキ開面を上にし、互いに電極を付けて、結め℃
並べる。次に、パッシベーション治具３を、第２図の様
に、韮べたヘキ開バー２の上に置き、平板１上でヘキ開
バー２をこの治具３に固定する。この時、平板１側から
見たヘキ開バー２と、治具３のと而は、同一平面になる
ように、出来るだけ凹凸の少いものとする。次に第３図
に示す椋に、ヘキ開・（−２を固定した治具３を裏側に
し、スバ、り装置のベース板４に形成された凹部５に埋
め込む。この凹部５の形は、治具３を畏返しにしてベー
ス板４に埋め込んだ時、ベース板４と治具：うとヘキ開
バー２とが、同一・衿面上に並ぶように、作られている
。このよ５ＶＣＬ、て、５ｉ０２膜のスパッタを行うと
、Ｓｉ（Ｊ２１漠の成長面が、ｔｌとんど凹凸のない平
面となる。こり為、均一な成長がなされ、ヘキ開バー２
の面にも、均一なバッ／ベー／ヨン膜が形成される。FIGS. 1, 2, and 3 (1) are perspective views showing the manufacturing method of an optical semiconductor device according to an embodiment of the present invention in the order of steps. A case will be disclosed in which 2W Ic / silicon (SiQ□) is grown by sputtering on the surface.First, as shown in FIG. 2 with the open side facing up, attach the electrodes to each other, and tie them ℃
Arrange. Next, as shown in FIG. 2, the passivation jig 3 is placed on the flattened bar 2, and the bar 2 is fixed to the jig 3 on the flat plate 1. At this time, the opening bar 2 and the jig 3 should have as few irregularities as possible so that they are on the same plane when viewed from the flat plate 1 side. Next, the jig 3 to which the screwdriver (-2 is fixed) is placed on the back side of the plating shown in FIG. When the jig 3 is turned upside down and embedded in the base plate 4, the base plate 4 and the jig opening bar 2 are made so that they are aligned on the same collar surface.This 5VCL, When the 5i02 film is sputtered, the growth surface of the Si(J21 film) becomes a flat surface with almost no unevenness.
A uniform bag/bay/yon film is also formed on the surface.
次に本発明の１ｍの火施菟］として、１／−ザ・ダイオ
ードのヘキ開面に、スパッタにより、酸１しアルミニク
ムＡｌ、０．を成長さぜる場合を運べる。Next, as a 1 m long fire according to the present invention, acid 1, aluminum Al, 0. You can carry it if you want to grow it.
１２０、 ｉ’！、Ｓ１ｏ□と比較して、吸湿性が小さ
く、バラ／べ一７ｇン膜としてより良い性質を持つ模で
あるが、スバ、り速度が遅い為、治具表面及びへ上聞バ
ー表面の凹凸の影響を受は易く、その点本実施例を通用
すると、著量なる効果がある。本尖施例で１丁、第１図
、第２図、第３図にある平板１へのバーの置き力や治具
へのセクトのまり力、ベース板への治具のセットのやり
力寺はＡｉｌ記−実施１／ｚｌＪと四球である。同様に
してセットし、 ＡＡ’２（Ｊ３Ｑスパッタを付５と、
ヘキ開バーの表面に均一なＡｌ２Ｏ３模が形成される。120, i'! Compared to S1o□, it has lower hygroscopicity and seems to have better properties as a bulk/beam 7g film, but because the slipping speed is slow, unevenness on the jig surface and the top bar surface may occur. In this respect, if this embodiment is applied, it will have a significant effect. In the main example, the force for placing the bar on the flat plate 1, the force for setting the section on the jig, and the force for setting the jig on the base plate, as shown in Figures 1, 2, and 3. Temple is Ail Ki-Execution 1/zlJ and walks. Set in the same way, attach AA'2 (J3Q sputter to 5,
A uniform Al2O3 pattern is formed on the surface of the cracked bar.
以上説明したように、本発明は、イ４４られたレーザ・
ダイオードの特性の均一性、及び再現性が向上し、製造
歩留りが大幅にＪｉ＋ｊ上し、呼た尚出力１／−ザ・ダ
イオードにおいてもバッ／ベー／−Ｊン膜が均−性艮＜
Ｊｔネ成される為、エージングにおける端面破壊の歩留
りが大幅に向上する等の幼果がある０As explained above, the present invention provides
The uniformity and reproducibility of the diode characteristics have improved, the manufacturing yield has increased significantly, and even in the case of a diode with an output of 1/-, the film has improved uniformity.
Because Jt is formed, there are young fruits such as the yield of end face fracture during aging is greatly improved.
第１図、第２図、第３図（ｊ本発明の一夷栴例の元手４
体素子の製造方法を工社１１１ヨて示す泉１祝図である
。
１・・・・・・−Ｆ数、２・・・・・・ヘキ開バー、３
・・・・・・治具、４・・・・・ベース板、５・・・・
・・凹部。
−＼、Figures 1, 2, and 3 (j The starting point 4 of the present invention
This is a picture of Izumi 1 showing the manufacturing method of the body element. 1...-F number, 2...Opening bar, 3
...Jig, 4...Base plate, 5...
・Concavity. −＼、
Claims (1)
、前記素子のヘキ開面にパッシベーション膜を形成する
光半導体素子の製造方法において、前記素子のヘキ開面
が同一平面上に位置するように、前記素子を固定する治
具を使用することを特徴とする光半導体素子の製造方法
。In a method for manufacturing an optical semiconductor device, in which a plurality of optical semiconductor devices are placed on a base plate in a growth apparatus, and a passivation film is formed on the cleavage planes of the elements, the cleavage planes of the elements are located on the same plane. A method for manufacturing an optical semiconductor device, comprising using a jig for fixing the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14659087A JPS63308992A (en) | 1987-06-11 | 1987-06-11 | Manufacture of optical semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14659087A JPS63308992A (en) | 1987-06-11 | 1987-06-11 | Manufacture of optical semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63308992A true JPS63308992A (en) | 1988-12-16 |
Family
ID=15411155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14659087A Pending JPS63308992A (en) | 1987-06-11 | 1987-06-11 | Manufacture of optical semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63308992A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0477033A2 (en) * | 1990-09-21 | 1992-03-25 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| EP0558856A2 (en) * | 1992-03-04 | 1993-09-08 | Sharp Kabushiki Kaisha | A method for producing a semiconductor laser device |
| EP0806494A1 (en) * | 1996-05-09 | 1997-11-12 | Lucent Technologies Inc. | Method and fixture for laser bar facet coating |
| WO2002025706A2 (en) * | 2000-09-21 | 2002-03-28 | Adc Telecommunications, Inc. | Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers |
| US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
| JP2008016694A (en) * | 2006-07-07 | 2008-01-24 | Toyoda Gosei Co Ltd | Method of manufacturing semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60140779A (en) * | 1983-12-27 | 1985-07-25 | Matsushita Electric Ind Co Ltd | Jig for treating semiconductor surface |
-
1987
- 1987-06-11 JP JP14659087A patent/JPS63308992A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60140779A (en) * | 1983-12-27 | 1985-07-25 | Matsushita Electric Ind Co Ltd | Jig for treating semiconductor surface |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0477033A2 (en) * | 1990-09-21 | 1992-03-25 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| EP0697756A2 (en) * | 1990-09-21 | 1996-02-21 | Sharp Kabushiki Kaisha | A semiconductor laser device and a method for producing the same |
| EP0697756A3 (en) * | 1990-09-21 | 1996-07-17 | Sharp Kk | A semiconductor laser device and a method for producing the same |
| EP0558856A2 (en) * | 1992-03-04 | 1993-09-08 | Sharp Kabushiki Kaisha | A method for producing a semiconductor laser device |
| EP0806494A1 (en) * | 1996-05-09 | 1997-11-12 | Lucent Technologies Inc. | Method and fixture for laser bar facet coating |
| US6037006A (en) * | 1996-05-09 | 2000-03-14 | Lucent Technologies Inc. | Method and fixture for laser bar facet coating |
| US6590920B1 (en) | 1998-10-08 | 2003-07-08 | Adc Telecommunications, Inc. | Semiconductor lasers having single crystal mirror layers grown directly on facet |
| WO2002025706A2 (en) * | 2000-09-21 | 2002-03-28 | Adc Telecommunications, Inc. | Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers |
| WO2002025706A3 (en) * | 2000-09-21 | 2003-07-31 | Adc Telecommunications Inc | Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers |
| US6673699B2 (en) | 2000-09-21 | 2004-01-06 | Adc Telecommunications, Inc. | Apparatus and method for batch processing semiconductor substrates in making semiconductor lasers |
| JP2008016694A (en) * | 2006-07-07 | 2008-01-24 | Toyoda Gosei Co Ltd | Method of manufacturing semiconductor device |
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