JPS63301535A - 半導体材料の接続方法及びそれに用いる接続材料 - Google Patents
半導体材料の接続方法及びそれに用いる接続材料Info
- Publication number
- JPS63301535A JPS63301535A JP62130595A JP13059587A JPS63301535A JP S63301535 A JPS63301535 A JP S63301535A JP 62130595 A JP62130595 A JP 62130595A JP 13059587 A JP13059587 A JP 13059587A JP S63301535 A JPS63301535 A JP S63301535A
- Authority
- JP
- Japan
- Prior art keywords
- ball
- wire
- alloy wire
- semiconductor material
- bump electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62130595A JPS63301535A (ja) | 1987-01-30 | 1987-05-27 | 半導体材料の接続方法及びそれに用いる接続材料 |
| GB8800518A GB2201545B (en) | 1987-01-30 | 1988-01-11 | Method for connecting semiconductor material |
| US07/970,232 US5384090A (en) | 1987-01-30 | 1992-10-30 | Fine wire for forming bump electrodes using a wire bonder |
| US08/315,575 US5514334A (en) | 1987-01-30 | 1994-09-30 | Fine lead alloy wire for forming bump electrodes |
| US08/315,577 US5514912A (en) | 1987-01-30 | 1994-09-30 | Method for connecting semiconductor material and semiconductor device used in connecting method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2120287 | 1987-01-30 | ||
| JP62-21202 | 1987-01-30 | ||
| JP62130595A JPS63301535A (ja) | 1987-01-30 | 1987-05-27 | 半導体材料の接続方法及びそれに用いる接続材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63301535A true JPS63301535A (ja) | 1988-12-08 |
| JPH0465534B2 JPH0465534B2 (enExample) | 1992-10-20 |
Family
ID=26358236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62130595A Granted JPS63301535A (ja) | 1987-01-30 | 1987-05-27 | 半導体材料の接続方法及びそれに用いる接続材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63301535A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04299544A (ja) * | 1991-03-28 | 1992-10-22 | Nec Corp | フィルムキャリヤ半導体装置の製造方法 |
| US5366692A (en) * | 1989-12-27 | 1994-11-22 | Tanaka Denshi Kogyo Kabushiki Kaisha | Alloy connecting materials for semiconductors |
-
1987
- 1987-05-27 JP JP62130595A patent/JPS63301535A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5366692A (en) * | 1989-12-27 | 1994-11-22 | Tanaka Denshi Kogyo Kabushiki Kaisha | Alloy connecting materials for semiconductors |
| US5550407A (en) * | 1989-12-27 | 1996-08-27 | Tanaka Denshi Kogyo Kabushiki Kaisha | Semiconductor device having an aluminum alloy wiring line |
| JPH04299544A (ja) * | 1991-03-28 | 1992-10-22 | Nec Corp | フィルムキャリヤ半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0465534B2 (enExample) | 1992-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071020 Year of fee payment: 15 |