JPS63297226A - Production of short-wavelength laser beam transmitting quartz glass - Google Patents
Production of short-wavelength laser beam transmitting quartz glassInfo
- Publication number
- JPS63297226A JPS63297226A JP13260687A JP13260687A JPS63297226A JP S63297226 A JPS63297226 A JP S63297226A JP 13260687 A JP13260687 A JP 13260687A JP 13260687 A JP13260687 A JP 13260687A JP S63297226 A JPS63297226 A JP S63297226A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- gel
- alkyl silicate
- sol
- prepare
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000007788 liquid Substances 0.000 claims abstract description 15
- -1 alkyl silicate Chemical compound 0.000 claims abstract description 12
- 239000000499 gel Substances 0.000 claims abstract description 10
- 239000011240 wet gel Substances 0.000 claims abstract description 10
- 239000003054 catalyst Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims abstract description 3
- 238000006460 hydrolysis reaction Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 4
- 238000003980 solgel method Methods 0.000 claims description 4
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000003377 acid catalyst Substances 0.000 abstract 2
- 238000001879 gelation Methods 0.000 abstract 2
- 230000003301 hydrolyzing effect Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 208000005156 Dehydration Diseases 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005262 decarbonization Methods 0.000 description 1
- 238000006298 dechlorination reaction Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ゾル−ゲル法によるガラスの製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing glass by a sol-gel method.
従来の石英ガラスの製造方法は、溶融法あるいは、CV
D法であった。The conventional manufacturing method of quartz glass is melting method or CV
It was method D.
しかし、従来の製造方法では、0.2μmを下回る短波
長レーザー光を透過できないという間型点を存する。However, in the conventional manufacturing method, there is a point in the molding process in which laser light with a short wavelength of less than 0.2 μm cannot be transmitted.
そこで、本発明は、前述の問題点を解決するもので、そ
の目的とするところは、ゾル−ゲル法による、均質、高
品質な石英ガラスの製造方法を提供するところにある。SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned problems, and its purpose is to provide a method for producing homogeneous, high-quality quartz glass using a sol-gel method.
本発明の短波長レーザー光透過石英ガラスの製造方法は
、アルキルシリケートを主原料とするゾル−ゲル法によ
るガラスの製造においてアルキルシリケートの塩基性触
媒下での加水分解反応生成物であるシリカ微粒子が分散
した溶液(第1液)と、アルキルシリケートの酸性触媒
による加水分解反応溶液(fi2液)とを所定割合にて
混合し調製したゾルをゲル化させてウェットゲルを作製
する工程、前記ウェットゲルを乾燥してドライゲルを作
製する工程、および前記ドライゲルを焼結し透明ガラス
体を作製する工程からなることを特徴とする。The method for producing short-wavelength laser light-transmissive quartz glass of the present invention is characterized in that in the production of glass by a sol-gel method using an alkyl silicate as a main raw material, silica fine particles, which are a product of a hydrolysis reaction of an alkyl silicate under a basic catalyst, are produced. A step of preparing a wet gel by gelling a sol prepared by mixing a dispersed solution (first solution) and a hydrolysis reaction solution of alkyl silicate using an acidic catalyst (fi2 solution) at a predetermined ratio, the wet gel and a step of sintering the dry gel to produce a transparent glass body.
本発明によれば、原料として高純度な液体原料を選べる
ので金属イオン等の不純物や、ゴミなどの異物などの混
入がない限り、本質的に均質、高品質なガラスを作製す
ることができる。According to the present invention, since a highly pure liquid raw material can be selected as a raw material, essentially homogeneous, high-quality glass can be produced as long as there is no contamination with impurities such as metal ions or foreign substances such as dust.
種々の条件下における数多くの実施例があるがここでは
典型的な例を挙げる。Although there are many examples under various conditions, a typical example will be given here.
■ 第1液の調製
蒸留精製したエチルシリケート、蒸留精製したエタノー
ル、蒸留精製した水、および孔径0.2μmのメンブラ
ンフィルタ−により濾過した市販電子工業用の最高グレ
ードの29%アンモニア水を、表1に示した組成で混合
し、4時間激しく撹拌した後冷暗所にて一晩静置しシリ
カ微粒子を成長させた。 このシリカ微粒子分散液を濃
縮した後、安定化のため、pH値を調整し、孔径10μ
mのメンプランフィルターにより濾過し第1液を調製し
た。■ Preparation of the first liquid Distilled purified ethyl silicate, distilled purified ethanol, distilled purified water, and the highest grade 29% ammonia water for commercial electronics industry, filtered through a membrane filter with a pore size of 0.2 μm, were combined in Table 1. The mixture was mixed with the composition shown in , stirred vigorously for 4 hours, and then allowed to stand overnight in a cool, dark place to grow silica fine particles. After concentrating this silica fine particle dispersion, the pH value was adjusted for stabilization, and the pore size was adjusted to 10 μm.
A first solution was prepared by filtration using a Membrane filter.
表1
なお、得られた第1液A、B、C中シリカ微粒子の平均
粒径は、光透過式の遠心沈降粒度分布測定装置で測定し
たところ、それぞれ、0.15μm、0.25μm、0
・40μmであ7た6■ 第2液の調製
蒸留精製したエチルシリケー)18.eρと孔径0,2
μmのメンブランフィルタ−により濾過した0、02規
定の塩酸6.15J2とを混合し、激しく撹拌し、加水
分解反応を行ない、第2液とした。なお第2液は同様に
して合計3パツチ調製した。Table 1 Note that the average particle diameters of the silica fine particles in the obtained first solutions A, B, and C were measured using a light transmission type centrifugal sedimentation particle size distribution measuring device, and were 0.15 μm, 0.25 μm, and 0.1 μm, respectively.
・Preparation of 2nd liquid Distilled purified ethyl silica) 18. eρ and pore diameter 0,2
The mixture was mixed with 6.15 J2 of 0.02 N hydrochloric acid filtered through a μm membrane filter, and stirred vigorously to carry out a hydrolysis reaction to obtain a second liquid. A total of 3 patches of the second solution were prepared in the same manner.
■ ゾル調製
第1液Aと第2液の1バツチを混合し、その後孔径0.
8μmのメンブらンフィルターにより濾過し、ゾルAと
調製した。■ Sol Preparation Mix one batch of the first solution A and the second solution, and then adjust the pore size to 0.
It was filtered through an 8 μm membrane filter and prepared as Sol A.
同様にして、第1液Bと第2液の1バツチを混合し、そ
の後、孔径20μmのメンプランツーイルターにより濾
過し、ゾルBを調製した。Similarly, one batch of the first liquid B and the second liquid were mixed and then filtered through a membrane filter with a pore size of 20 μm to prepare sol B.
同様にして、第1液Cと第2液の1バツチを混合し、そ
の後、孔径30μmのメンブランフィルタ−により濾過
し、ゾルCを調製した。Similarly, one batch of the first liquid C and the second liquid were mixed and then filtered through a membrane filter with a pore size of 30 μm to prepare a sol C.
なお上記のゾルA、B、CQPH値と液温は、いずれも
ほぼ等しく、それぞれ4.5.20°Cであった。なお
■〜■は洗浄度クラス100のクリーンルーム内で行な
った。The above-mentioned sol A, B, and CQPH values and liquid temperatures were all approximately the same, and were 4.5.20°C, respectively. Note that ■ to ■ were conducted in a clean room of cleanliness class 100.
■ ゲル化〜乾燥
次に前記ゾルAと50個のポリプロピレン製の容器(内
寸で200X200X100mm)に3ρずつ注入し、
フタをして密閉状面でゲル化させ、16個のウェット
ゲルを作製した。■ Gelling ~ Drying Next, pour the above sol A into 50 polypropylene containers (inner dimensions 200 x 200 x 100 mm) each at 3 ρ.
The container was covered with a lid and gelatinized on a sealed surface to produce 16 wet gels.
同様にして前記ゾルBとゾルCから、各16個のウェッ
トゲルを作製した。In the same manner, 16 wet gels each were prepared from Sol B and Sol C.
次に得られた48個のウェットゲルを、密閉伏聾のまま
で30°Cにて3日間熟成し、その後、0.4%の開孔
率をもつフタにとりかえ室温から65°Cに昇温し、以
後この温度に保持し乾燥したところ、10〜14日間で
、大気中に放置しても割れない安定なドライゲルが表2
に示した歩留りで得られた。Next, the obtained 48 wet gels were aged for 3 days at 30°C in a sealed closed state, and then the lid was replaced with a lid with a porosity of 0.4% and the temperature was raised from room temperature to 65°C. When the dry gel was heated and then kept at this temperature for 10 to 14 days, a stable dry gel that did not crack even when left in the air was produced as shown in Table 2.
was obtained with the yield shown in .
表2
■ 焼結
前記3種のドライゲルを焼結炉に投入し、昇温速度30
@C/hrで30@Cから200@Cまで加熱し、この
温度にて5時間保持した後、300°Cまで加熱し5時
間保持し脱吸着水処理を行なった。Table 2 ■ Sintering The three types of dry gels mentioned above were put into a sintering furnace, and the heating rate was 30.
It was heated from 30@C to 200@C at @C/hr and held at this temperature for 5 hours, then heated to 300°C and held for 5 hours to perform desorption water treatment.
続いて昇温速度30°C/hrで300@Cから700
°Cまで加熱し、とのmrxにて20時間保持した後、
昇温速度30°C/hrで700゜Cから900°Cま
で加熱し、この温度にて10時間保持し、昇温速度30
°C/hrで900゜Cからtooo@cまで加熱し、
この温度で10時間保持して脱炭素、脱塩化アンモニウ
ム処理、脱水縮合反応の促進処理を行なった。Subsequently, the temperature was increased from 300@C to 700 at a heating rate of 30°C/hr.
After heating to °C and holding at mrx for 20 hours,
Heated from 700°C to 900°C at a heating rate of 30°C/hr, held at this temperature for 10 hours, and then heated at a heating rate of 30°C/hr.
Heat from 900°C to too@c at °C/hr,
This temperature was maintained for 10 hours to perform decarbonization, dechlorination ammonium treatment, and acceleration treatment of dehydration condensation reaction.
この後、炉内にHeガスを流しながら昇温速度30′″
C/hrで1250°Cまで加熱し、この温度で2時間
保持して閉孔化処理を行なった。After this, while flowing He gas into the furnace, the heating rate was 30'''.
It was heated to 1250°C at a rate of C/hr and held at this temperature for 2 hours to perform a pore-closing treatment.
その後、昇温速度60°C/ h rで1400゜Cま
で加熱し、この温度で1時間保持したところ無孔化し、
歩留り100%で、透明ガラス体が得られた。After that, it was heated to 1400°C at a heating rate of 60°C/hr, and when it was held at this temperature for 1 hour, it became non-porous.
A transparent glass body was obtained with a yield of 100%.
このガラス体の諸物性分析の結果は全て石英ガラスのも
のと一致した。All the results of physical property analysis of this glass body were consistent with those of quartz glass.
本実施例により作製した石英ガラス中には、気泡などの
異物がなく、極めて高品質であった。また、紫外、可視
域での分光特性も、フラットであり、IC製造に用いら
れるフォトマスク基板として使用可能な品質であった。The quartz glass produced in this example had no foreign substances such as bubbles and was of extremely high quality. Furthermore, the spectral characteristics in the ultraviolet and visible regions were flat, and the quality was such that it could be used as a photomask substrate used in IC manufacturing.
(発明の効果〕
このようにして本発明により製造されるガラスは、アル
キルシリケートの塩基性触媒下での加水分解反応生成物
であるシリカ微粒子が分散した溶液と、 アルキルシリ
ケートの酸性触媒による加水分解反応溶液とを所定割合
にて混合し調製した高純度なゾルをゲル化させてウェッ
トゲルを作製し、該ウェットゲルを乾燥して多孔性のド
ライゲルとした後焼結し透明ガラスとするため、金属イ
オン等の不純物、結晶、気泡、不定形状の異物の極めて
少ない高品質のガラスが作製でき、ゴミ、異物等の混入
を防ぐ手段、およびそれらを取り除く手段を併用するこ
とにより、前記の極めて高品質のガラスを安定して高歩
留りにて製造することができる。 また、AJ2.T
i、Ge、Na、Ca、Mg、Li、Teなどの諸元素
を、ゾル調製時に添加することにより種々の組成の多成
分系で高品質なガラスの製造も容易である。(Effects of the Invention) The glass thus produced according to the present invention is produced by using a solution in which fine silica particles, which are a product of the hydrolysis reaction of an alkyl silicate under a basic catalyst, are dispersed, and A high-purity sol prepared by mixing with a reaction solution at a predetermined ratio is gelled to produce a wet gel, and the wet gel is dried to form a porous dry gel and then sintered to form transparent glass. It is possible to produce high-quality glass with extremely low levels of impurities such as metal ions, crystals, bubbles, and irregularly shaped foreign substances. It is possible to stably produce high-quality glass at a high yield.Also, AJ2.T
By adding various elements such as i, Ge, Na, Ca, Mg, Li, and Te at the time of sol preparation, it is easy to produce high-quality multicomponent glasses of various compositions.
以 上 出E1人 セイコーエブンン株式会社 代理人 弁理士 最 上 務 他1名N二′that's all 1 person from Seiko Even Co., Ltd. Agent: Patent Attorney Mogami and 1 other person N2'
Claims (1)
によるガラスの製造において、アルキルシリケートの塩
基性触媒下での加水分解反応生成物であるシリカ微粒子
が分散した溶液(以後第1液と記す)と、アルキルシリ
ケートの酸性触媒による加水分解反応(以後第2液と記
す)とを所定割合にて混合し調製したゾルをゲル化させ
てウェットゲルを作製する工程。前記ウェットゲルを乾
燥してドライゲルを作製する工程および、前記ドライゲ
ルを焼結し透明ガラス体を作製する工程からなることを
特徴とする短波長レーザー光透過石英ガラスの製造方法
。(1) In the production of glass by the sol-gel method using alkyl silicate as the main raw material, a solution in which fine silica particles, which are a product of the hydrolysis reaction of alkyl silicate under a basic catalyst, are dispersed (hereinafter referred to as the first liquid) and a hydrolysis reaction of an alkyl silicate using an acidic catalyst (hereinafter referred to as the second liquid) in a predetermined ratio, and gelling a sol prepared to prepare a wet gel. A method for producing quartz glass that transmits short wavelength laser light, comprising the steps of drying the wet gel to produce a dry gel, and sintering the dry gel to produce a transparent glass body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13260687A JPS63297226A (en) | 1987-05-28 | 1987-05-28 | Production of short-wavelength laser beam transmitting quartz glass |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13260687A JPS63297226A (en) | 1987-05-28 | 1987-05-28 | Production of short-wavelength laser beam transmitting quartz glass |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63297226A true JPS63297226A (en) | 1988-12-05 |
Family
ID=15085263
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13260687A Pending JPS63297226A (en) | 1987-05-28 | 1987-05-28 | Production of short-wavelength laser beam transmitting quartz glass |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63297226A (en) |
-
1987
- 1987-05-28 JP JP13260687A patent/JPS63297226A/en active Pending
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