JPS63296303A - Oxide semiconductor for thermistor - Google Patents
Oxide semiconductor for thermistorInfo
- Publication number
- JPS63296303A JPS63296303A JP62132446A JP13244687A JPS63296303A JP S63296303 A JPS63296303 A JP S63296303A JP 62132446 A JP62132446 A JP 62132446A JP 13244687 A JP13244687 A JP 13244687A JP S63296303 A JPS63296303 A JP S63296303A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- atom
- constant
- oxide semiconductor
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims abstract description 4
- 239000000470 constituent Substances 0.000 claims abstract 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 abstract description 3
- GPKIXZRJUHCCKX-UHFFFAOYSA-N 2-[(5-methyl-2-propan-2-ylphenoxy)methyl]oxirane Chemical compound CC(C)C1=CC=C(C)C=C1OCC1OC1 GPKIXZRJUHCCKX-UHFFFAOYSA-N 0.000 abstract 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、高応答性の温度センサとして利用できるとこ
ろの負の抵抗温度係数を有するサーミスタ用酸化物半導
体に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an oxide semiconductor for a thermistor having a negative temperature coefficient of resistance and which can be used as a highly responsive temperature sensor.
従来の技術
従来、汎用ディスク型サーミスタとしては、Ｍｎ−Ｇｏ
−Ｎｉ−Ｃｕ酸化物系サーミスタ材料であって、しかも
その結晶構造がスピネル構造をとるものが主に用いられ
てきた。サーミスタ材料の電気的特性としては、一般的
に、比抵抗およびサーミスタ定数Ｂで示される。サーミ
スタ定数（以下Ｂ定数と記す）は抵抗の温度勾配を表す
もので、具体的にはサーミスタ材料のバンドギャップに
相当する活性化エネルギーにより決定される。従ってＢ
定数が大きい程、温度に対する抵抗値変化が大きく、す
なわち応答性が良くなる。また、比抵抗とＢ定数には図
に示すように相関性があり、現在の汎用サーミスタ材料
は図中２で囲んだ領域、つまり比抵抗が数１０〜数１０
０にΩ・偽、Ｂ定数２５ｏＯ〜５０００にのものが用い
られている。Conventional technology Conventionally, Mn-Go has been used as a general-purpose disk type thermistor.
-Ni-Cu oxide-based thermistor materials whose crystal structure is a spinel structure have been mainly used. The electrical characteristics of a thermistor material are generally expressed as specific resistance and thermistor constant B. The thermistor constant (hereinafter referred to as B constant) represents the temperature gradient of resistance, and is specifically determined by the activation energy corresponding to the band gap of the thermistor material. Therefore B
The larger the constant, the larger the change in resistance value with respect to temperature, that is, the better the response. In addition, there is a correlation between specific resistance and B constant as shown in the figure, and current general-purpose thermistor materials have a specific resistance in the area surrounded by 2 in the figure, that is, a specific resistance of several 10 to several 10
0 is used, and a B constant of 25oO to 5000 is used.
また、酸化コバルトとリチウムを組合わせた酸化物半導
体としては、一般的に酸化物半導体材料の導電機構の１
つとして説明される原子価制御理論の実例で、古（ＶＥ
ＲＷＥＹらにより取り上げられている。In addition, as an oxide semiconductor that combines cobalt oxide and lithium, it is generally known that one of the conductive mechanisms of oxide semiconductor materials is
This is a practical example of valence control theory explained as one
It has been taken up by RWEY et al.
（Ｐｈ１ｌｉｐｓ Ｒｅ５ｅｒｃｈ Ｒｅｐｏｒｔ
５１７３しかしながら、ＶＫＲＷＥＹらの検討はあ
くまでも学究的な段階で終っており、サーミスタとして
の用途開発以前のものであって、サーミスタ材料として
の検討は二本入夫によって記載されたもの（■日立製作
所、中央研究所創立二十周年記念論文集、Ｐ３０〜４６
、昭和３７年）があるだけである。この二本の検討結果
によれば比抵抗およびＢ定数とも低く、サーミスタとし
て適するものではなく、これに準するものと記載されて
いる。(Ph1lips Re5erch Report
5173 However, the study by VKRWEY et al. was only at the academic stage, and it was before the development of its use as a thermistor, and the study as a thermistor material was based on the one described by Nibonirio (■Hitachi, Ltd., Collected papers commemorating the 20th anniversary of the founding of the Central Research Institute, pages 30-46
, 1962). According to the results of these two studies, both the specific resistance and the B constant are low, and it is not suitable as a thermistor, but is described as similar to this.
発明が解決しようとする問題点
従来より、自動車の水温計用あるいはアイロンの温度セ
ンサ用などとして、応答性を良くすることを目的にしだ
比抵抗が低く、Ｂ定数の高いサーミスタ材料が要望され
てきたが、上記図の汎用サーミスタ材料ではこの要望を
満足することができなかった。Problems to be Solved by the Invention There has been a demand for thermistor materials with low resistivity and high B constant for use in automobile water temperature gauges, iron temperature sensors, etc., with the aim of improving responsiveness. However, the general-purpose thermistor material shown in the figure above could not satisfy this demand.
本発明は、この要望を満足できるサーミスタ材料、すな
わちサーミスタ用酸化物半導体を提供することを目的と
するものである。An object of the present invention is to provide a thermistor material that can satisfy this demand, that is, an oxide semiconductor for thermistor.
問題点を解決するだめの手段
上記要望を達成するために、本発明は前述のＧｏ−Ｌｉ
系酸化物半導体を見直し、改良を加えることによって解
決できたものである。本発明のサーミスタ用酸化物半導
体は、金属酸化物の焼結混合体よりなり、その金属元素
としてコバルト（Ｃｏ）７５．０〜９６．５原子％、銅
（Ｃｕ） １．０〜４．０原子％、リチウム（Ｌｉ）２
．０〜１８．６原子％、亜鉛（Ｎ ｉ ）ｏ、ｓ 〜１
２．０原子％およびケイ素（Ｓｌ）ｏ、ｏ〜２．Ｑ原子
％（但し０．０原子％は除く）の５種を合計１００原子
％含有してなるものである。Means for Solving the Problems In order to achieve the above-mentioned needs, the present invention provides the above-mentioned Go-Li
This problem was solved by reviewing the oxide semiconductor and making improvements. The oxide semiconductor for a thermistor of the present invention is made of a sintered mixture of metal oxides, and the metal elements thereof include cobalt (Co) 75.0 to 96.5 atomic % and copper (Cu) 1.0 to 4.0 atomic %. Atomic %, lithium (Li)2
．． 0 to 18.6 atom %, zinc (N i ) o,s ~1
2.0 atom % and silicon (Sl) o, o~2. It contains a total of 100 atomic % of five types of Q atomic % (excluding 0.0 atomic %).
作用
この構成により図の実線で囲まれた領域１の比抵抗が低
く、Ｂ定数の高いサーミスタ用酸化物半導体を得ること
となる。ここで、この半導体は酸化コバル）（Ｃｏｏ）
が基本組成であって、四面ヒ三コバル） （Ｃｏ３０４
）が生成される場合には、ホッピング伝導の寄与により
、高Ｂ定数を達成するこ、とができない。Effect: With this configuration, an oxide semiconductor for a thermistor is obtained in which the resistivity of the region 1 surrounded by the solid line in the figure is low and the B constant is high. Here, this semiconductor is cobal oxide (Coo)
is the basic composition, and has four sides (Co304)
), it is not possible to achieve a high B constant due to the contribution of hopping conduction.
実施例 以下、本発明の実施例について説明する。Example Examples of the present invention will be described below.
市販の原料酸化コバルト、酸化銅、酸化リチウム、酸化
亜鉛および二酸化ケイ素を後述する表に示すようにそれ
ぞれの原子％の組成になるように配合した。サーミスタ
製造工程を例示すると、これらの配合組成物をボールミ
ルで湿式混合し、そのスラリーを乾燥後８００℃の温度
で仮焼し、その仮焼物を再びボールミルで湿式粉砕混合
を行った。こうして得られたスラリーを乾燥し、ポリビ
ニルアルコールをバインダーとして添加混合し、所要量
採って円板状に加圧成形し成形品を多数作り、これらを
窒素ガスフロー中１２００℃〜１３００℃で２時間焼成
した。こうして得られた円板状焼結体の両面に五ｇを主
成分とする電極を設けた。Commercially available raw materials cobalt oxide, copper oxide, lithium oxide, zinc oxide, and silicon dioxide were blended to have the respective atomic % compositions as shown in the table below. To illustrate the thermistor manufacturing process, these blended compositions were wet mixed in a ball mill, the slurry was dried and calcined at a temperature of 800°C, and the calcined product was wet-pulverized and mixed again in a ball mill. The slurry thus obtained is dried, polyvinyl alcohol is added and mixed as a binder, the required amount is taken and pressure molded into disk shapes to make many molded products, and these are heated at 1200°C to 1300°C in a nitrogen gas flow for 2 hours. Fired. Electrodes containing 5g as a main component were provided on both sides of the disk-shaped sintered body thus obtained.
これらの試料について２５℃および６０℃での抵抗値（
それぞれのＲ２５およびＲ５８）を測定し、２５℃での
比抵抗ｐ２ｓを下記（１）式より、またＢ定数を（２）
下記式より算出した。The resistance values at 25℃ and 60℃ for these samples (
Measure each R25 and R58), calculate the specific resistance p2s at 25°C from the following formula (1), and calculate the B constant from (2).
Calculated using the following formula.
ρ ＝ＲＸ−・・・・・・・・・・・・（１）２５
２５ ．１
（３＝主電極積、ｄ＝電極間距ａ）
これらの結果を下表にまとめて示す。ρ=RX−・・・・・・・・・・・・(1)25
25. 1 (3=main electrode area, d=interelectrode distance a) These results are summarized in the table below.
（以下余 白） （１１印試料は比較用で６シ、本発明の請求外である。(Left below) (The sample marked 11 is for comparison and is not claimed in the present invention.
）上述したように図中実線で囲んだ領域１が本発明の目
的とする低比抵抗、高Ｂ定数の領域である。) As mentioned above, the region 1 surrounded by the solid line in the figure is the region of low resistivity and high B constant that is the object of the present invention.
この領域は、センサとして高応答性を達成するために機
器側から要望された電気特性をサーミスタ材料の特性（
比抵抗およびＢ定数）として置き換えたものである。In this area, the characteristics of the thermistor material (
specific resistance and B constant).
前夫において、試料番号１．６，６，８，９゜１２．１
３，１５，１６．１８は、この実線で囲んだ領域１に含
まれない。つまり機器メーカの要望を満足しないという
点から、本発明の範囲外とした。For my ex-husband, sample numbers 1.6, 6, 8, 9゜12.1
3, 15, 16, and 18 are not included in area 1 surrounded by this solid line. In other words, it is outside the scope of the present invention because it does not satisfy the demands of equipment manufacturers.
今回の試料は、乾式成形後焼成したものを用いたが、ピ
ードタイプの素子でもよく、素子製造方法に何ら拘束さ
れるものではない。また、混合・粉砕にはジルコニア玉
石を用いた。Although the sample used this time was one that was dry formed and then fired, a peed type element may also be used, and there are no restrictions on the element manufacturing method. In addition, zirconia boulders were used for mixing and crushing.
発明の効果 以上のように本発明によれば、コバルト、銅。Effect of the invention As described above, according to the present invention, cobalt and copper.
リチウム、亜鉛にさらにケイ素を加えることにより、３
成分系材料よりさらに低比抵抗、高Ｂ定数化を狙ったも
のである。また、ケイ素はリチウムとガラス化しやすい
ため、コバルトに固溶するリチウム量を補う必要がある
。そして、ケイ素添加による効果として若干のＢ定数ア
ップが見られるが、ガラス相の寄与があるかどうかは不
明である。By adding silicon to lithium and zinc, 3
The aim is to achieve lower specific resistance and higher B constant than component-based materials. Furthermore, since silicon easily vitrifies with lithium, it is necessary to supplement the amount of lithium dissolved in cobalt. Although a slight increase in the B constant is seen as an effect of silicon addition, it is unclear whether the glass phase contributes.
以上述べたように本発明は、低比抵抗、高Ｂ定数を有す
る負の抵抗温度係数を有するサーミスタ用酸化物半導体
を提供するものであるが、センサとして温度に対して高
応答性が図れること、またこれにより節電できることに
なる。また、従来にない低比抵抗、高Ｂ定数のサーミス
タ材料であることから、センサとして全く新しい用途が
展開されることが期待できるものである。As described above, the present invention provides an oxide semiconductor for a thermistor having a low specific resistance, a high B constant, and a negative temperature coefficient of resistance. , This also results in power savings. Furthermore, since it is a thermistor material with unprecedented low resistivity and high B constant, it is expected that it will be used in completely new applications as a sensor.
図は負の抵抗温度係数を持つサーミスタ材料の特性相関
を示す図である。The figure shows the characteristic correlation of a thermistor material having a negative temperature coefficient of resistance.
Claims (1)
として、コバルト７５．０〜９６．５原子％、銅１．０
〜４．０原子％、リチウム２．０〜１８．５原子％、亜
鉛０．５〜１２．０原子％およびケイ素０．０〜２．０
原子％（但し０．０原子％は除く）の５種を合計１００
原子％含有することを特徴とするサーミスタ用酸化物半
導体。Consisting of a sintered mixture of metal oxides, its constituent metal elements include cobalt 75.0 to 96.5 at%, copper 1.0
~4.0 at%, 2.0 to 18.5 at% lithium, 0.5 to 12.0 at% zinc, and 0.0 to 2.0 at% silicon.
Total of 5 types of atomic% (excluding 0.0 atomic%) 100
An oxide semiconductor for a thermistor characterized by containing atomic%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62132446A JPS63296303A (en) | 1987-05-28 | 1987-05-28 | Oxide semiconductor for thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62132446A JPS63296303A (en) | 1987-05-28 | 1987-05-28 | Oxide semiconductor for thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63296303A true JPS63296303A (en) | 1988-12-02 |
Family
ID=15081552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62132446A Pending JPS63296303A (en) | 1987-05-28 | 1987-05-28 | Oxide semiconductor for thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63296303A (en) |
-
1987
- 1987-05-28 JP JP62132446A patent/JPS63296303A/en active Pending
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