JPS63296232A - Wire bonding - Google Patents
Wire bondingInfo
- Publication number
- JPS63296232A JPS63296232A JP62134287A JP13428787A JPS63296232A JP S63296232 A JPS63296232 A JP S63296232A JP 62134287 A JP62134287 A JP 62134287A JP 13428787 A JP13428787 A JP 13428787A JP S63296232 A JPS63296232 A JP S63296232A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- wire bonding
- pad
- capillary
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000007373 indentation Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造工程で用いるワイヤボンデ
ィング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wire bonding method used in the manufacturing process of semiconductor devices.
従来、この種のワイヤボンディング方法で使用するワイ
ヤボンダーは第３図に示すように構成されている。これ
を同図に基づいて説明すると、同図において、符号１で
示すものは半導体チップ２が接合されたリードフレーム
３を載置する受台、４はこの受台１の側方に設けられ同
一平面上の２方向に移動するＸ−Ｙテーブル、５はこの
Ｘ−Ｙテーブル４にボンディングヘッド６を介して上下
動自在に取り付けられワイヤ７が挿通するキャピラリ８
を有するボンディングアーム、９はこのボンディングア
ーム５の上方に設けられかつ前記ボンディングヘッド６
に支持アームｌＯを介して取り付けられた光学系である
。この光学系９には、第４図に示すように各々が互いに
直交する方向に開口するカメラ鏡筒１１と、このカメラ
鏡筒１１内に収納されたハーフミラ−１２とランプ１３
とが備えられている。Conventionally, a wire bonder used in this type of wire bonding method is constructed as shown in FIG. To explain this based on the same figure, in the same figure, the reference numeral 1 denotes a pedestal on which a lead frame 3 to which a semiconductor chip 2 is bonded is placed, and 4 is provided on the side of this pedestal 1 and is the same. An X-Y table 5 that moves in two directions on a plane is attached to the X-Y table 4 via a bonding head 6 so as to be movable up and down, and a capillary 8 through which a wire 7 is inserted.
A bonding arm 9 having a
The optical system is attached to the optical system via a support arm lO. As shown in FIG. 4, this optical system 9 includes a camera barrel 11 that opens in directions perpendicular to each other, a half mirror 12 and a lamp 13 housed within the camera barrel 11.
are provided.
このように構成されたワイヤボンダーを用いるワイヤボ
ンディングは、予め受台１上のリードフレーム３に接合
された半導体チップ２のワイヤボンディングパッド（図
示せず）とリードフレーム３のワイヤボンディングパッ
ド（図示せず）とをワイヤ７によって接続することによ
り行われる。Wire bonding using the wire bonder configured in this way is performed by connecting the wire bonding pads (not shown) of the semiconductor chip 2 bonded to the lead frame 3 on the pedestal 1 in advance and the wire bonding pads (not shown) of the lead frame 3. This is done by connecting the two with the wire 7.
ところで、この種のワイヤボンディング方法においては
、作業者が光学系９を介して処理された画像を見ながら
、ボンディングヘッド６を第５図に示す半導体チップ２
およびリードフレーム３の各ボンド点（ＩＰ、ＩＬ、
・・・８Ｐ、８Ｌ）の真上まで動作させることにより
、このときの各ボンド点のＸ−Ｙ座標を画像処理機構（
図示せず）に光学系９の光軸とキャピラリ８の先端面間
の距離（オフセット量）を考慮して記憶させるいわゆる
セルフティーチング方法が採用されている。By the way, in this type of wire bonding method, the operator moves the bonding head 6 to the semiconductor chip 2 shown in FIG. 5 while viewing the processed image through the optical system 9.
and each bond point of lead frame 3 (IP, IL,
...8P, 8L), the X-Y coordinates of each bond point at this time are determined by the image processing mechanism (
A so-called self-teaching method is employed in which the distance (offset amount) between the optical axis of the optical system 9 and the tip surface of the capillary 8 is stored in a computer (not shown).
ところが、従来のワイヤボンディング方法においては、
基準ボンディング座標がセルフティーチングによって設
定されているため、第６図に示すように各ボンド点が作
業者によって基準ボンディング座標が変化したり（数μ
ｍ−１０数μｍ）、またワイヤボンディング時に生じる
熱によって例えばボンディングアーム５．支持アームｌ
Ｏ等のワイヤボンダ一部品が変形し、光学系９の光軸と
キャピラリ８の先端間の距離が変化したりしてワイヤ７
の接続位置がポンディングパッドの中心位置からずれて
いた。この結果、半導体チップ２およびリードフレーム
３のポンディングパッドに対するワイヤ７の接合強度が
低下したり、正規のワイヤボンディングパッドと異なる
部位にワイヤ７が接続されたりしてワイヤボンディング
上の信鯨性が低下するという問題があった。また、ワイ
ヤボンディングパッドの小型化やバッド間隔を縮小化す
ることができず、近年における半導体チップ２の高密度
実装化に応じることができないという問題もあった。However, in the conventional wire bonding method,
Since the reference bonding coordinates are set by self-teaching, the reference bonding coordinates of each bonding point may change depending on the operator (several μ), as shown in Figure 6.
m-10 several μm), and the heat generated during wire bonding may cause damage to the bonding arm 5. support arm l
If one part of the wire bonder such as O is deformed and the distance between the optical axis of the optical system 9 and the tip of the capillary 8 changes, the wire 7
The connection position was shifted from the center position of the bonding pad. As a result, the bonding strength of the wire 7 to the bonding pads of the semiconductor chip 2 and the lead frame 3 may decrease, or the wire 7 may be connected to a location different from that of the regular wire bonding pad, resulting in poor reliability in wire bonding. There was a problem with the decline. Further, there is a problem in that it is not possible to downsize the wire bonding pads or reduce the spacing between the pads, and it is not possible to respond to the recent trend toward high-density packaging of semiconductor chips 2.
本発明はこのような事情に鑑みなされたもので、ワイヤ
接合強度の低下やワイヤの誤接続を防止することができ
、もってワイヤボンディング上の信鎖性を向上させるこ
とができると共に、近年における半導体チップの高密度
実装化に応じることができるワイヤボンディング方法を
提供するものである。The present invention was developed in view of the above circumstances, and it is possible to prevent a decrease in wire bonding strength and incorrect connection of wires, thereby improving the reliability of wire bonding, as well as improving the reliability of semiconductors in recent years. The present invention provides a wire bonding method that can respond to high-density packaging of chips.
本発明に係るワイヤボンディング方法は、ワイヤボンデ
ィングバンドにワイヤを接続するにあたり、接続済のワ
イヤパッド接続部およびこのワイヤパッド接続部の付近
にワイヤボンディングパッドと直角な方向から照射した
光の反射量によってワイヤ上のキャピラリ圧痕の中心点
を求め、この中心点とワイヤボンディングバンドの中心
点とのずれ量を検出することによりワイヤボンディング
座標を補正するものである。In the wire bonding method according to the present invention, when connecting a wire to a wire bonding band, the amount of light reflected from the direction perpendicular to the wire bonding pad is determined by The wire bonding coordinates are corrected by determining the center point of the capillary indentation on the wire and detecting the amount of deviation between this center point and the center point of the wire bonding band.
本発明においては、ワイヤボンディングパッド上の中心
位置にワイヤを確実に接続することができる。In the present invention, the wire can be reliably connected to the central position on the wire bonding pad.
第１図（ａ）〜（Ｃ）は本発明に係るワイヤボンディン
グ方法を説明するための図、第２図（ａ）、 （ｂ）は
同じ（ワイヤボンディング方法におけるワイヤの接続前
と接続後を示す断面図で、同図において第３図〜第６図
と同一の部材については同一の符号を付し、詳細な説明
は省略する。同図において、符号２１で示すものは前記
ワイヤ７が挿通するキャピラリで、先端面２１ａおよび
開口内面２１ｂが各々偏平面とテーバ面によって形成さ
れている。なお、２２は例えば水素炎等によって前記ワ
イヤ７の先端部に形成された球状部、２３は前記半導体
チップ２のワイヤボンディングパッドである。Figures 1 (a) to (C) are diagrams for explaining the wire bonding method according to the present invention, and Figures 2 (a) and (b) are the same (showing before and after wire connection in the wire bonding method). In this sectional view, the same members as in FIGS. 3 to 6 are designated by the same reference numerals, and detailed explanations are omitted. The tip surface 21a and the opening inner surface 21b are each formed by an oblique surface and a Taber surface.Note that 22 is a spherical portion formed at the tip of the wire 7 by, for example, hydrogen flame, and 23 is a spherical portion formed by the semiconductor. This is the wire bonding pad of chip 2.
次に、本発明におけるワイヤボンディング方法について
説明する。Next, the wire bonding method according to the present invention will be explained.
先ず、キャピラリ２１を挿通するワイヤ７の先端部を水
素炎（図示せず）によって第２図（ａ）に示すように球
状に形成する０次に、このワイヤ７の球状部２２をキャ
ピラリ２１の先端面２１ａで押圧することにより予めリ
ードフレーム３のアイランド上に接合された半導体チッ
プ２のワイヤボンディングパッド２３に同図（ｂ）に示
すように接続する。そして、接続済のワイヤパッド接続
部７ａおよびワイヤパッド接続部７ａの付近に第１図（
ａ）に示すようにワイヤボンディングパッド２３と直角
な方向から照射した光の反射量によってワイヤ７上のキ
ャピラリ圧痕の中心点を求め、この中心点とワイヤボン
ディングパッド２３の中心点とのずれ量を検出すること
によりワイヤボンディング座標を補正する。このとき、
反射光の光量分布状態は、キャピラリ２１のテーパ面が
押圧するワイヤ７から反射する光量は最も少な（なり、
またワイヤボンディングパッド２３からの光量は最も多
く（ワイヤボンディングパッド２３はその表面が滑らか
であり、かつ光学系８の光軸と直交する。）なり、第１
図（ｂ）に示すようになる。ここで、ＡからＢの間の光
量を「明」とし、Ａ以上およびＢ以下の光量を「暗」と
する２値化処理によって第１図（Ｃ）に示すような画像
が得られるため、キャピラリ圧痕の中心点とワイヤボン
ディングパッド２３の中心点とのずれ量（ΔＸ、ΔＹ）
を求めることができ、接続済のワイヤ７の接続位置によ
ってワイヤボンディング座標を補正することができるの
である。図中、斜線ａ、ｂで示す部分は反射光量が「暗
」であり、Ｃで示す部分は「明」である。First, the tip of the wire 7 to be inserted through the capillary 21 is formed into a spherical shape using hydrogen flame (not shown) as shown in FIG. By pressing with the tip end surface 21a, it is connected to the wire bonding pad 23 of the semiconductor chip 2 bonded in advance on the island of the lead frame 3, as shown in FIG. 3(b). Then, the connected wire pad connection portion 7a and the vicinity of the wire pad connection portion 7a as shown in FIG.
As shown in a), the center point of the capillary indentation on the wire 7 is determined based on the amount of reflection of light irradiated from a direction perpendicular to the wire bonding pad 23, and the amount of deviation between this center point and the center point of the wire bonding pad 23 is calculated. The wire bonding coordinates are corrected by the detection. At this time,
The light amount distribution state of the reflected light is such that the amount of light reflected from the wire 7 pressed by the tapered surface of the capillary 21 is the smallest (
Also, the amount of light from the wire bonding pad 23 is the largest (the surface of the wire bonding pad 23 is smooth and is perpendicular to the optical axis of the optical system 8), and the first
The result is as shown in Figure (b). Here, an image as shown in FIG. 1(C) is obtained by binarization processing in which the light amount between A and B is "bright" and the light amount above A and below B is "dark". Amount of deviation between the center point of the capillary impression and the center point of the wire bonding pad 23 (ΔX, ΔY)
can be determined, and the wire bonding coordinates can be corrected based on the connection position of the wire 7 that has already been connected. In the figure, the areas indicated by diagonal lines a and b are "dark" in reflected light amount, and the areas indicated by C are "bright."
なお、本発明においては、全てのワイヤ７にって補正処
理を施す必要はな（、セルフティーチングした直後の数
チップについて実施すればよい。Note that in the present invention, it is not necessary to perform the correction process on all the wires 7 (it is only necessary to perform the correction process on several chips immediately after self-teaching).
以上説明したように本発明によれば、接続済のワイヤパ
ッド接続部およびこのワイヤパッド接続部付近にワイヤ
ボンディングパッドと直角な方向から照射した光の反射
量によってワイヤ上のキャピラリ圧痕の中心点を求め、
この中心点とワイヤボンディングパッドの中心点とのず
れ量を検出することによりワイヤボンディング座標を補
正するので、ワイヤボンディングパッドの中心位置にワ
イヤを確実に接続することができる。したがって、ワイ
ヤ接合強度の低下やワイヤの誤接続を防止することがで
きるから、ワイヤボンディング上の信頌性を向上させる
ことができる。また、ワイヤボンディングパッドの小型
化ならびにパッド間隔の縮小化を図ることができるから
、近年における半導体チップの高密度実装化を図ること
ができる。As explained above, according to the present invention, the center point of the capillary indentation on the wire is determined based on the amount of reflection of light irradiated onto the connected wire pad connection portion and the vicinity of the wire pad connection portion from a direction perpendicular to the wire bonding pad. seek,
Since the wire bonding coordinates are corrected by detecting the amount of deviation between this center point and the center point of the wire bonding pad, the wire can be reliably connected to the center position of the wire bonding pad. Therefore, it is possible to prevent a decrease in wire bonding strength and erroneous wire connections, thereby improving the reliability of wire bonding. Furthermore, since the wire bonding pads can be made smaller and the spacing between the pads can be reduced, it is possible to achieve the high-density packaging of semiconductor chips in recent years.
第１図（ａ）〜（Ｃ）は本発明に係るワイヤボンディン
グ方法を説明するための図、第２図（ａ）、 （ｂｌは
同じ（ワイヤボンディング方法におけるワイヤの接続前
と接続後を示す断面図、第３図は従来のワイヤボンディ
ング方法に用いるワイヤボンダーを示す側面図、第４図
はその光学系を示す側面図、第５図はリードフレーム上
の半導体チップを示す平面図、第６図は従来のワイヤボ
ンディング方法の不良例を示す平面図である。
２・・・・半導体チップ、７・・・・ワイヤ、７ａ・・
・・ワイヤパッド接続部、２１・・・・キャピラリ、２
１ａ・・・・先端面、２１ｂ・・・・開口内面、２２・
・・・球状部、２３・・・・ワイヤボンディングパッド
。
代 理 人 大 岩 増 雄；ｌ”。
７４２区
２１： キャピラリ
２１０８ 袂β飴面
２１ｂ：１１１口内め
（ｂ） ２２ ’ ｙｊ゛枚吉Ｐ３、−
第５図
第６図
Δス８Figures 1 (a) to (C) are diagrams for explaining the wire bonding method according to the present invention, and Figure 2 (a) and (bl are the same (showing before and after wire connection in the wire bonding method) 3 is a side view showing a wire bonder used in a conventional wire bonding method, FIG. 4 is a side view showing its optical system, FIG. 5 is a plan view showing a semiconductor chip on a lead frame, and FIG. The figure is a plan view showing an example of a defect in a conventional wire bonding method. 2...Semiconductor chip, 7...Wire, 7a...
...Wire pad connection part, 21...Capillary, 2
1a... Tip surface, 21b... Opening inner surface, 22...
... Spherical part, 23... Wire bonding pad. 742 Ward 21: Capillary 2108 Folded Beta Side 21b: 111 Mouth (b) 22'
Claims (1)
形成されたキャピラリを挿通するワイヤの先端部を球状
に形成し、この球状部を前記キャピラリの先端面で押圧
することによりワイヤボンディングパッドに接続するワ
イヤボンディング方法であって、ワイヤボンディングパ
ッドにワイヤを接続するにあたり、接続済のワイヤのパ
ッド接続部およびこのパッド接続部の付近にワイヤボン
ディングパッドと直角な方向から照射した光の反射量に
よってワイヤ上のキャピラリ圧痕の中心点を求め、この
中心点とワイヤボンディングパッドの中心点とのずれ量
を検出することによりワイヤボンディング座標を補正す
ることを特徴とするワイヤボンディング方法。The tip of a wire that is inserted through a capillary whose tip surface and opening inner surface are respectively formed by a flat surface and a tapered surface is formed into a spherical shape, and this spherical portion is pressed by the tip surface of the capillary to connect to a wire bonding pad. In this wire bonding method, when connecting a wire to a wire bonding pad, the amount of light reflected from the direction perpendicular to the wire bonding pad is applied to the pad connection area of the already connected wire and the vicinity of this pad connection area. A wire bonding method characterized in that the wire bonding coordinates are corrected by determining the center point of the capillary indentation and detecting the amount of deviation between this center point and the center point of the wire bonding pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62134287A JPS63296232A (en) | 1987-05-27 | 1987-05-27 | Wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62134287A JPS63296232A (en) | 1987-05-27 | 1987-05-27 | Wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63296232A true JPS63296232A (en) | 1988-12-02 |
Family
ID=15124754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62134287A Pending JPS63296232A (en) | 1987-05-27 | 1987-05-27 | Wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63296232A (en) |
-
1987
- 1987-05-27 JP JP62134287A patent/JPS63296232A/en active Pending
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