JPS58178528A - Bonding device - Google Patents

Bonding device

Info

Publication number
JPS58178528A
JPS58178528A JP57061442A JP6144282A JPS58178528A JP S58178528 A JPS58178528 A JP S58178528A JP 57061442 A JP57061442 A JP 57061442A JP 6144282 A JP6144282 A JP 6144282A JP S58178528 A JPS58178528 A JP S58178528A
Authority
JP
Japan
Prior art keywords
bonding
pad
mirror
bonded
glass filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57061442A
Other languages
Japanese (ja)
Inventor
Yoshiko Yasuda
安田　美子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57061442A priority Critical patent/JPS58178528A/en
Publication of JPS58178528A publication Critical patent/JPS58178528A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate

Abstract

PURPOSE:To accomplish bonding under close monitoring even in the presence of such an obstacle as a thick glass filter by a method wherein an optical reflector is provided in the vicinity of the location whereat the bonding work is performed when a metal filament is bonded to an electrode of a semiconductor device. CONSTITUTION:A semiconductor device 2 is fixed to the surface of a package 1 to be covered by a glass filter 3. A metal filament 6 is bonded to a bonding pad 4 provided on the exposed surface of the device 2. The bonding tool 5 pressing down the filament 6 is provided with a mirror 31 on its side, and a microscope 7 with its optical axis 8 inclined aims at the mirror 31. The bonding unit is caused to move, while the reflection 32 from the mirror 31 is made use of the monitor the pad 4 and its surroundings. With the bonding unit being constructed as such, bonding work can be accomplished correctly, with relationship between the pad 4 and the tool 5 being clearly observed.

Description

【発明の詳細な説明】 本発明は金属細線を用いて半導体装置またはその他室子
部品の電極と外部端子間を接続するに際して使用するボ
ンディング装置に関するものであり、特にせまい領域に
金属細線をボンディングするとき細部を観察しながら作
業することを０１能にした構造のボンディング装置を提
供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding device used to connect an electrode of a semiconductor device or other component to an external terminal using a thin metal wire, and particularly for bonding a thin metal wire in a narrow area. The purpose of the present invention is to provide a bonding apparatus having a structure that allows the operator to work while observing the details at the same time.

近年半導体デバイスの進展は目ざましいものかあ勺、そ
れにつれて組立パッケージング技術も向上してきた。特
に超高波熱圧着法を応用した自動ワイヤボンディングに
より高速、大敏処理が１可能になったが、一方では非常
にせまい領域に筒錆度で金属細線をボンディングする技
術が強く要求され始めた。そのひとつはレーザーダイオ
ードの組立であり、またガラス板に形成したカラーフィ
ルタを接着した固体撮像装置の組立パッケージングであ
る。Semiconductor devices have made remarkable progress in recent years, and assembly and packaging technology has improved accordingly. In particular, automatic wire bonding using ultra-high wave thermocompression bonding has made high-speed, highly sensitive processing possible, but at the same time, there has been a strong demand for a technology that can bond thin metal wires in extremely narrow areas with a high degree of cylindrical rust. One of these is the assembly of laser diodes, and the assembly and packaging of solid-state imaging devices in which color filters formed on glass plates are bonded.

しかし、これらのワイヤボンディングは未だ手動により
人間の目による判断をもとに行なわなければならない領
域が残っている。However, these wire bondings still have to be performed manually based on human visual judgment.

第１図は従来のボンディング装置を用いて、カラーフィ
ルタを接着した固体撮像装置にワイヤボンディングをす
る工程を示す。同図において、１はパッケージ、２は固
体撮像装置で、その上にガラスフィルタ３が接着されて
いる。フィルタ３ａは通常厚さ０．５〜Ｑ、９１２Ｂの
ガラス板に形成されている。４は固体撮像装置２上の電
極（以下バッドと称す）、６はボンディング装置のボン
ディング部、６は金属＃ＩｆｌＪである。７は顕微鏡、
８は光軸を表わしている。FIG. 1 shows a process of wire bonding a solid-state imaging device to which a color filter is bonded using a conventional bonding device. In the figure, 1 is a package, 2 is a solid-state imaging device, and a glass filter 3 is bonded thereon. The filter 3a is usually formed on a glass plate with a thickness of 0.5 to 912B. 4 is an electrode (hereinafter referred to as a pad) on the solid-state imaging device 2, 6 is a bonding part of a bonding device, and 6 is a metal #IflJ. 7 is a microscope,
8 represents the optical axis.

上記構成において、ガラスフィルタ３のエッヂ９が障害
物となり、顕微鏡７によりボンディングパッドを観るこ
とが困難となり、ボンディング作業に支障をきたしてい
た。また、光軸傾斜角１０を例えば４６°とした場合ガ
ラス厚さ１１とガラスエッヂからパッドまでの距離１３
を１：１にしておかなければパッド位置を確認すること
ができないためチップサイズは犬きくなる。In the above configuration, the edge 9 of the glass filter 3 becomes an obstacle, making it difficult to see the bonding pads with the microscope 7, which hinders the bonding work. Furthermore, when the optical axis inclination angle 10 is, for example, 46°, the glass thickness 11 and the distance from the glass edge to the pad 13
If the ratio is not set to 1:1, the pad position cannot be confirmed, so the chip size will be too large.

上記欠点を解決するためにはガラスフィルタ３のガラス
厚さ１１を薄くすれば良いが、その場合にはフィルタ形
成時においてガラス板が反ったり歪んだりしてフィルタ
形成精度が悪くなるうえ接着時の精度も変化するなどの
問題を生じる。In order to solve the above-mentioned drawbacks, the glass thickness 11 of the glass filter 3 can be made thinner, but in that case, the glass plate will warp or become distorted during filter formation, resulting in poor filter formation accuracy, and when bonding. This causes problems such as changes in accuracy.

本発明のボンディング装置は上記問題点を除去するもの
であり、例えば厚いガラス板のガラスフィルタを用いた
場合等の障害物がある場合でもワイヤボンディング時に
パッドを観ることを可能としたものである。The bonding apparatus of the present invention eliminates the above-mentioned problems, and makes it possible to see the pads during wire bonding even when there are obstacles, such as when a thick glass filter is used.

以下図面をもとにして本発明の詳細な説明する。The present invention will be described in detail below based on the drawings.

第２図は本発明の実施例におけるボンディング装置の要
部を示しており、超音波ボンディング用のウェッヂと呼
ばれる同装置の先端部拡大図である。同装置の特徴は部
分２２を鏡面に研磨して光反射面にしていることである
が、この部分２２にアルミ等の高反射率金属を被着させ
て光反射面を形成しても良い。FIG. 2 shows the main parts of a bonding device according to an embodiment of the present invention, and is an enlarged view of the tip of the device called a wedge for ultrasonic bonding. The feature of this device is that the portion 22 is polished to a mirror surface to form a light reflecting surface, but the portion 22 may be coated with a highly reflective metal such as aluminum to form a light reflecting surface.

第３図に本発明のボンディング装置を用いてボンディン
グする状態を示す。従来例を示す第１図と共通部分には
同一番号を付している。ボンディング装置の先端６にお
ける側面３１の領域が鏡面になっており、同図に示すよ
うにポンディングパッド４にボンディングを行なう際、
顕微鏡７を通して位置合わせをするのであるが、先端部
の側面３１が鏡面であることにより光が反射光３２の如
く反射される。同装置を左右に移動させることにより側
面３１にうつるパッドおよびその周辺を容易に観察する
ことが可能となる。FIG. 3 shows a state in which bonding is performed using the bonding apparatus of the present invention. Components common to those in FIG. 1 showing the conventional example are given the same numbers. The side surface 31 at the tip 6 of the bonding device has a mirror surface, and as shown in the figure, when bonding to the bonding pad 4,
The positioning is performed through the microscope 7, and since the side surface 31 of the tip is a mirror surface, light is reflected as reflected light 32. By moving the device from side to side, it becomes possible to easily observe the pads on the side surfaces 31 and their surroundings.

以上のように本発明のボンディング装置を用いることに
より、半導体装置、ガラスフィルタ等を何ら変更するこ
となく細部を観察しながらボンディングができる。さら
にガラスエッヂからパッドまでの距離が最少値で良いた
めチップサイズを小さくできる。As described above, by using the bonding apparatus of the present invention, bonding can be performed while observing the details without making any changes to the semiconductor device, glass filter, etc. Furthermore, since the distance from the glass edge to the pad only needs to be the minimum value, the chip size can be reduced.

本発明のボンディング装置は単に固体撮像装置のボンデ
ィングに限らず、光軸に障害物が入るような構造の半導
体装置の組立に非常に効果を発揮するものであり、工業
上の利用価値が高い。The bonding apparatus of the present invention is extremely effective not only for bonding solid-state imaging devices, but also for assembling semiconductor devices with structures in which obstacles may enter the optical axis, and has high industrial utility value.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来のボンディング装置によるボンデ明のボン
ディング装置によるボンディング工程を示す図である。 １・・・・・・パッケージ、２・・・・・・半導体装置
、３・・・・・ガラスフィルタ、３・・・・・・ガラス
板、４・・・・・・ポンディングパッド、６・・・・・
・ボンディングツール、６・・・・・・金属細線、７・
・・・・・顕微鏡、８・・・・・・光軸、９・・・・・
・ガラスエッヂ、１０・・・・・・光軸傾斜角、１１・
・・・・・ガラス厚、１２・・・・・・ガラス端部から
ボンディング・（７、ドまでの距離、２２．３１・・・
・・・ボンディングツール先端の鏡面部、３２・・・・
・・鏡面部で反射された光の光軸。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図 第２図FIG. 1 is a diagram showing a bonding process using a conventional bonding apparatus. DESCRIPTION OF SYMBOLS 1...Package, 2...Semiconductor device, 3...Glass filter, 3...Glass plate, 4...Ponding pad, 6・・・・・・
・Bonding tool, 6...Thin metal wire, 7.
...Microscope, 8...Optical axis, 9...
・Glass edge, 10... Optical axis inclination angle, 11.
...Glass thickness, 12...Distance from glass edge to bonding (7, C), 22.31...
...Mirror surface part at the tip of the bonding tool, 32...
...The optical axis of the light reflected by the mirror surface. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2

Claims (1)

【特許請求の範囲】[Claims] ÷嬶淋皐１４電極部に金属線をボンディングするボンデ
ィング部の近傍に光反射部を形成したことを特徴とする
ボンディング装置。A bonding device characterized in that a light reflecting section is formed near a bonding section for bonding a metal wire to an electrode section.
JP57061442A 1982-04-12 1982-04-12 Bonding device Pending JPS58178528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57061442A JPS58178528A (en) 1982-04-12 1982-04-12 Bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57061442A JPS58178528A (en) 1982-04-12 1982-04-12 Bonding device

Publications (1)

Publication Number Publication Date
JPS58178528A true JPS58178528A (en) 1983-10-19

Family

ID=13171180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57061442A Pending JPS58178528A (en) 1982-04-12 1982-04-12 Bonding device

Country Status (1)

Country Link
JP (1) JPS58178528A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206224A (en) * 1992-01-24 1993-08-13 Hitachi Ltd Ultrasonic joining equipment and quality monitoring method
US8091762B1 (en) * 2010-12-08 2012-01-10 Asm Assembly Automation Ltd Wedge bonding method incorporating remote pattern recognition system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05206224A (en) * 1992-01-24 1993-08-13 Hitachi Ltd Ultrasonic joining equipment and quality monitoring method
US8091762B1 (en) * 2010-12-08 2012-01-10 Asm Assembly Automation Ltd Wedge bonding method incorporating remote pattern recognition system

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