JPS58180035A - Bonder - Google Patents

Bonder

Info

Publication number
JPS58180035A
JPS58180035A JP57063747A JP6374782A JPS58180035A JP S58180035 A JPS58180035 A JP S58180035A JP 57063747 A JP57063747 A JP 57063747A JP 6374782 A JP6374782 A JP 6374782A JP S58180035 A JPS58180035 A JP S58180035A
Authority
JP
Japan
Prior art keywords
bonding
joined
wire
tool
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57063747A
Other languages
Japanese (ja)
Inventor
Nobutoshi Takehashi
信逸 竹橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57063747A priority Critical patent/JPS58180035A/en
Publication of JPS58180035A publication Critical patent/JPS58180035A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To compression-bond a metallic thin wire uniformly with a surface to be joined on bonding by forming the surface to be joined of the bonding surface of a tool to an arcuate or the same shape even when the surface to be joined has a curved surface or a polyhedron. CONSTITUTION:The circular arc of the bonding surface 13 of a tool 12 has shape larger than the section of the surface to be joined 11, and its weighting does not concentrate to one point even when an Al wire 15 is pressure-attached onto the surface to be joined 11, thus preventing the thinning of Al. That is, since Al 15 is compression-bonded on the whole surface of the bonding surface 13, weighting can be applied uniformly. Excellent bonding is enabled because the Al wire 15 is fast stuck properly onto the surface to be joined 11 so as to be formed along the surface after bonding.

Description

【発明の詳細な説明】 本発明は、半導体装置の組立に使用するボンディング装
置に関するもので、特に面が平坦でない電極への金属細
線のワイヤボンディングを確実に行なわせるボンディン
グ装置を提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a bonding device used for assembling semiconductor devices, and in particular provides a bonding device that reliably wire-bonds a thin metal wire to an electrode whose surface is not flat. .

以下、第１図をもとに従来例を説明する。第１図は゛１
′：導体レーザのワイヤポンドの状態を示したものであ
る。半導体レーザの場合、レーザ光がペレット２の端面
より発光するだめ、ペレット２を通常のＩＣとは異った
形で実装しなければならない。又、ペレット２に対して
電極３が横方向となっており、ボンディングワイヤ４は
電極側面に行なわなければならない。１は電極３の取付
部である。Hereinafter, a conventional example will be explained based on FIG. Figure 1 is ゛1
': Shows the state of the wire pound of the conductor laser. In the case of a semiconductor laser, since the laser beam is emitted from the end face of the pellet 2, the pellet 2 must be mounted in a different form from that of a normal IC. Further, since the electrode 3 is oriented laterally to the pellet 2, the bonding wire 4 must be placed on the side surface of the electrode. Reference numeral 1 denotes a mounting portion for the electrode 3.

次に第２図を用いて詳しく説明する。第２図（ム）にお
いて、被接合面３が曲面を有している場合、従来のツー
ル６ではボンディング面６が平面であるため、前記ツー
ル６のボンディング面６を、前記被接合面３に圧着した
際、加重がボンディング面６の一点に集中する。同図（
Ｂ）はムｌ線４がボンディングされた状態で、前記ツー
ル５のボンディング面６が前記被接合面３と同形状を有
していないため、加重がＡ／線４の一点７に集中しその
ため、前記一点７のムＰ厚が極端にうずくなり、機械的
に弱くなる。Next, a detailed explanation will be given using FIG. 2. In FIG. 2(m), when the bonding surface 3 has a curved surface, the bonding surface 6 of the tool 6 is attached to the bonding surface 3 because the bonding surface 6 of the conventional tool 6 is a flat surface. When crimped, the load is concentrated on one point on the bonding surface 6. Same figure (
In B), the bonding surface 6 of the tool 5 does not have the same shape as the bonded surface 3 when the mulch wire 4 is bonded, so the load is concentrated on one point 7 of the A/wire 4. , the thickness of the lumen P at the point 7 becomes extremely warped and becomes mechanically weak.

次に本発明の構成及び効果を図面を用いて詳しく説明す
る。第３図ｆＡｌにおいて、ツール１２のボンデインク
面１３がほぼ同じ円弧となる形状を有しており、又同図
ｆＢｌにおいてエツジ部１４はワイヤ切断防止のため丸
くなっている。Next, the configuration and effects of the present invention will be explained in detail using the drawings. In FIG. 3 fAl, the bonding ink surface 13 of the tool 12 has substantially the same arcuate shape, and in FIG. 3 fBl, the edge portion 14 is rounded to prevent wire breakage.

次に、第４図を用いて前記ツールを用いたボンディング
方法について説明する。Next, a bonding method using the tool will be described with reference to FIG.

同１図（Ａｌにおいて、ツール１２のボンディング面１
３の円弧が被接合面１１の断面に比べて大きい形状を有
している。同図（Ｂｌにおいて、Ａ／線１６が前記被接
合面１１に圧着されても一点にその加重が集中せず、そ
れによってムｌがうすくなることがない。つまり、ボン
ディング面１３の全面でＡ／１６を圧着接合するため均
一に加重を加えることが出来る。同図ｔｃ＋はボンディ
ング後の状態で前記被接合面１１にｋｌ線１６とが沿う
よう適度に密着せしめ、良好なボンディングが可能とな
る。Figure 1 (In Al, the bonding surface 1 of the tool 12
3 has a larger shape than the cross section of the surface 11 to be joined. In the same figure (Bl), even if the A/ wire 16 is crimped to the surface 11 to be bonded, the weight will not be concentrated on one point, and the unevenness will not become thin.In other words, the entire surface of the bonding surface 13 /16 can be bonded by pressure, so it is possible to apply a uniform load. In the same figure, tc+ is in a state after bonding, and the kl line 16 is brought into moderate close contact with the surface to be bonded 11 along with the kl line 16, making it possible to perform good bonding. .

本発明の効果は以上の説明により明らかなとおり、曲面
又は多面体を有する被接合面でも、ツールのボンディン
グ面を、前記被接合面を円弧もしくは同形状にすること
により、ボンディングの際金属細線を前記被接合面に均
一に圧着接合することが出来る。そして、これらは超音
波、熱圧着ワイヤボンディングにおけるツールのボンデ
ィング面にも応用することにより同様な効果が得られる
。As is clear from the above description, the effect of the present invention is that even when the surface to be bonded has a curved surface or a polyhedron, the bonding surface of the tool is made into an arc or the same shape as the surface to be bonded, so that the fine metal wire is It is possible to uniformly press and bond the surfaces to be bonded. Similar effects can be obtained by applying these to the bonding surface of tools in ultrasonic and thermocompression wire bonding.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は半導体レーザのワイヤボンディングの状態を示
す図、第２図（Ａ）　、　ｆＢｌは従来の装置における
ボンディング状態の要部概略図、第３図（ムｌ　、　（
Ｂｌは本発明の一実施例にかかるツール部分の拡大図、
第４図（Ａｌ−（Ｃ１は本発明のツールを用いたボンデ
ィング工程を示す図である。 １１・・・・・・被接合面、１２・・・・・・ツール、
１３・・・・・・ボンディング面、１６・・・・・・ム
ｌ線。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
ＩＩ 第、２　図 １５１３図 第４図Fig. 1 is a diagram showing the wire bonding state of a semiconductor laser, Fig. 2 (A), fBl is a schematic diagram of the main part of the bonding state in a conventional device, and Fig. 3 is a diagram showing the state of wire bonding in a conventional device.
Bl is an enlarged view of a tool part according to an embodiment of the present invention;
FIG. 4 (Al-(C1 is a diagram showing a bonding process using the tool of the present invention. 11... surface to be bonded, 12... tool,
13...Bonding surface, 16...Multi line. Name of agent: Patent attorney Toshio Nakao and 1 other person 1st
II No. 2 Figure 1513 Figure 4

Claims (2)

【特許請求の範囲】[Claims] （１）外部電極の凹凸部に金属細線を圧着する圧着部の
形状を、前記外部電極の凹部又は凸部に対応した凸状又
は凹状にしたことを特徴とするボンディング装置。(1) A bonding device characterized in that a crimping part for crimping a thin metal wire onto a concave and convex portion of an external electrode has a convex or concave shape corresponding to a concave or convex portion of the external electrode. （２）圧着部の凹部が円弧状をなし、前記凹部の曲率半
径が外部電極の凸部の曲率半径より犬としたことを特徴
とする特許請求の範囲第１項に記載のボンディング装置
。(2) The bonding device according to claim 1, wherein the concave portion of the crimping portion has an arc shape, and the radius of curvature of the concave portion is smaller than the radius of curvature of the convex portion of the external electrode.
JP57063747A 1982-04-15 1982-04-15 Bonder Pending JPS58180035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57063747A JPS58180035A (en) 1982-04-15 1982-04-15 Bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57063747A JPS58180035A (en) 1982-04-15 1982-04-15 Bonder

Publications (1)

Publication Number Publication Date
JPS58180035A true JPS58180035A (en) 1983-10-21

Family

ID=13238299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57063747A Pending JPS58180035A (en) 1982-04-15 1982-04-15 Bonder

Country Status (1)

Country Link
JP (1) JPS58180035A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886200A (en) * 1988-02-08 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Capillary tip for bonding a wire
US5335842A (en) * 1993-03-19 1994-08-09 National Semiconductor Corporation Self-aligning single point bonding tool

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4886200A (en) * 1988-02-08 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Capillary tip for bonding a wire
US5335842A (en) * 1993-03-19 1994-08-09 National Semiconductor Corporation Self-aligning single point bonding tool

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