JPS635234Y2 - - Google Patents
Info
- Publication number
- JPS635234Y2 JPS635234Y2 JP1982111254U JP11125482U JPS635234Y2 JP S635234 Y2 JPS635234 Y2 JP S635234Y2 JP 1982111254 U JP1982111254 U JP 1982111254U JP 11125482 U JP11125482 U JP 11125482U JP S635234 Y2 JPS635234 Y2 JP S635234Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- lead frame
- bonding
- substrate
- supplying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000003466 welding Methods 0.000 claims description 7
- 238000005219 brazing Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Description
【考案の詳細な説明】
本考案は、IC用のガラス封止セラミツクパツ
ケージを用いた半導体装置に関する。[Detailed Description of the Invention] The present invention relates to a semiconductor device using a glass-sealed ceramic package for IC.
従来、サーデイツプ型デユアルインライン型式
のガラス封止セラミツクパツケージを用いた半導
体装置では、セラミツクベースの中央凹部底面に
導電性ペーストを焼き付けたりして半導体基板接
着用金属層を形成し、この時、半導体基板の裏面
に何らかの電位を付加する必要がある場合には、
基板電位供給用のリードフレームをセラミツクベ
ースの周縁部から内部に挿入し絶縁物質のガラス
層によりこのリードフレームをセラミツクベース
に固着すると共に、次のようにリードフレームと
半導体基板接着用金属層が電気的に接続されてい
た。 Conventionally, in semiconductor devices using a dual-in-line glass-sealed ceramic package, a metal layer for bonding the semiconductor substrate is formed by baking a conductive paste on the bottom of the central recess of the ceramic base. If it is necessary to add some potential to the back side of
A lead frame for supplying substrate potential is inserted into the ceramic base from the periphery, and this lead frame is fixed to the ceramic base using an insulating glass layer, and the lead frame and the metal layer for bonding the semiconductor substrate are was connected.
第１図、第２図、第３図は、基板電位供給用の
リードフレームを半導体基板接着用金属層にろう
材等を使用して接続した従来の半導体装置の断面
図を示している。第１図の半導体装置では基板電
位供給用のリードフレーム１と半導体基板接着用
金属層２との間に金属細線３を用いて連結してい
るが、結線後にセラミツクパツケージのキヤツプ
７をガラス層６により封止する時、加熱により、
金属細線３に熱が伝わり、金属細線としてAuを
用いた場合インナーリードとAu細線との結合部
で、Au−Al系合金が生成され、接着の信頼性を
著しく低下させる問題があつた。また、第２図に
示すように、金属細線３と基板接着用金属層２の
間に補助金属片８を介在させて金属細線３を金属
層２上に接着させる方法もあるが、補助金属片８
は金属層２上にろう材によつてろう付けされるた
め、ろう材の補給が必要となると共に、補助金属
片８の位置決めが難かしく、自動化されたワイヤ
ボンデイング装置の使用に支障をきたしていた。
更に、第３図に示すように、リードフレーム１を
基板接着用金属層２の上に直接ろう材によりろう
付けする方法も提案されているが、ろう材が必要
となり、微細な箇所でのろう付け作業は難かし
く、作業性が悪い等の問題があつた。 1, 2, and 3 are cross-sectional views of conventional semiconductor devices in which a lead frame for supplying a substrate potential is connected to a metal layer for bonding a semiconductor substrate using a brazing material or the like. In the semiconductor device shown in FIG. 1, a thin metal wire 3 is used to connect a lead frame 1 for supplying a substrate potential to a metal layer 2 for bonding a semiconductor substrate. When sealing by heating,
Heat is transmitted to the thin metal wire 3, and when Au is used as the thin metal wire, an Au--Al alloy is generated at the joint between the inner lead and the thin Au wire, resulting in a problem that the reliability of adhesion is significantly reduced. Furthermore, as shown in FIG. 2, there is a method in which an auxiliary metal piece 8 is interposed between the thin metal wire 3 and the metal layer 2 for bonding the substrate, and the thin metal wire 3 is bonded onto the metal layer 2. 8
is brazed onto the metal layer 2 with a brazing material, which requires replenishment of the brazing material, and also makes it difficult to position the auxiliary metal piece 8, which hinders the use of automated wire bonding equipment. Ta.
Furthermore, as shown in Fig. 3, a method has been proposed in which the lead frame 1 is brazed directly onto the metal layer 2 for bonding the substrate using a brazing material, but this requires a brazing material and the soldering may not be applied at minute points. There were problems such as difficult attachment work and poor workability.
本考案は、上記の問題点を解決するためになさ
れたもので、セラミツクベース上の半導体基板接
着用金属層に対し、高い作業性でかつ確実に基板
電位供給用のリードフレームを熔着することがで
きる半導体装置を提供することを目的とし、この
ために、基板電位供給用リードフレームの先端を
半導体基板接着用金属層に直接レーザ溶接により
熔着するようにしたものである。 The present invention was developed to solve the above problems, and it is possible to weld a lead frame for supplying substrate potential to a metal layer for bonding a semiconductor substrate on a ceramic base with high workability and reliably. To this end, the tip of the lead frame for supplying substrate potential is directly welded to the metal layer for bonding the semiconductor substrate by laser welding.
以下、本考案の実施例を図面に基づいて説明す
る。 Hereinafter, embodiments of the present invention will be described based on the drawings.
第４図はセラミツクパツケージを用いた半導体
装置の部分斜視図を示し、第５図は同半導体装置
の断面図を示している。５はAl2O3を主成分とす
る粉体を加圧成形し焼成したセラミツクベースで
あり、中央に凹部が形成され、その凹部の底面に
導電性ペーストを焼き付け、あるいは表面にAg
めつきされた金属板により半導体基板接着用金属
層２が形成され、この基板接着用金属層２上に半
導体基板４が接着される。１１は基板電位供給用
リードフレームであつて、外部からその先端をセ
ラミツクベース５内に挿入され、このリードフレ
ーム１１は熔着用の低融点のガラス層６によりセ
ラミツクベース５の縁部にガラス熔着される。そ
してこの基板電位供給用リードフレーム１１の内
方先端部は、セラミツクベース５の中央凹部の底
面に向けてほぼ直角に曲折され、基板接着用金属
層２上に当接される。この状態で、基板電位供給
用リードフレーム１１と基板接着用金属層２の接
触箇所にレーザ熔接機から細いレーザ光が照射さ
れ、リードフレーム１１と金属層２の接触箇所が
溶融され、短時間でレーザ熔接が行われる。よつ
て、リードフレーム１１の内方先端部は基板接着
用金属層２に十分な強度をもつて電気的に接続さ
れる。これにより、高温ろう材を利用して金属層
２上に接着された半導体基板４には、リードフレ
ーム１１を介して直ちに基板電位が供給されるこ
とになる。尚、実験によればレーザ熔接に使用す
るレーザ発振器として、レーザ光の発振波長を
1.06μm、ビーム径を200μmφ、発振出力を0.2Jと
するNd・YAGレーザ発振器を使用し、リードフ
レーム１１と金属層２の材質を42ALLOYとした
場合、短時間で信頼性の高い確実な熔接を行うこ
とができた。 FIG. 4 shows a partial perspective view of a semiconductor device using a ceramic package, and FIG. 5 shows a sectional view of the same semiconductor device. 5 is a ceramic base made by press-molding and firing a powder mainly composed of Al 2 O 3 , and a recess is formed in the center, and a conductive paste is baked on the bottom of the recess or Ag is applied to the surface.
A semiconductor substrate bonding metal layer 2 is formed of the plated metal plate, and a semiconductor substrate 4 is bonded onto this substrate bonding metal layer 2. Reference numeral 11 denotes a lead frame for supplying a substrate potential, and its tip is inserted into the ceramic base 5 from the outside. be done. The inner tip of this substrate potential supply lead frame 11 is bent at a substantially right angle toward the bottom of the central concave portion of the ceramic base 5, and is brought into contact with the substrate bonding metal layer 2. In this state, a narrow laser beam is irradiated from the laser welding machine to the contact point between the lead frame 11 for supplying substrate potential and the metal layer 2 for bonding the substrate, and the contact point between the lead frame 11 and the metal layer 2 is melted in a short time. Laser welding is performed. Therefore, the inner tip of the lead frame 11 is electrically connected to the substrate bonding metal layer 2 with sufficient strength. As a result, a substrate potential is immediately supplied to the semiconductor substrate 4 bonded onto the metal layer 2 using the high-temperature brazing material via the lead frame 11. Additionally, experiments have shown that the oscillation wavelength of the laser beam used in laser welding is
When using an Nd/YAG laser oscillator with a diameter of 1.06μm, a beam diameter of 200μmφ, and an oscillation output of 0.2J, and the material of the lead frame 11 and metal layer 2 is 42ALLOY, reliable and reliable welding can be achieved in a short time. I was able to do it.
一方、信号伝送用リードフレーム１２はセラミ
ツクベース５の縁部にガラス熔着され、その内方
先端部は図示しないボンデイングワイヤにより半
導体基板４上の対応する電極層に接続される。 On the other hand, the signal transmission lead frame 12 is glass-welded to the edge of the ceramic base 5, and its inner tip is connected to a corresponding electrode layer on the semiconductor substrate 4 by a bonding wire (not shown).
半導体基板４の基板接着用金属層２に対する接
着処理とワイヤのボンデイング処理が終了した
後、セラミツクベース５上にセラミツクキヤツプ
７が被せられ、キヤツプ７がガラス層６によりセ
ラミツクベース上に封着される。 After the bonding process of the semiconductor substrate 4 to the substrate bonding metal layer 2 and the wire bonding process are completed, the ceramic cap 7 is placed on the ceramic base 5, and the cap 7 is sealed onto the ceramic base with the glass layer 6. .
以上のように、本発明に係る半導体装置によれ
ば、基板電位供給用リードフレームの内方先端部
を基板接着用金属層に直接レーザ熔接により熔着
した構造としたから、従来のように金属細線を介
してリードフレームを金属層に接続するものに比
べ接着の信頼性が著しく向上し、また、ろう付け
によりリードフレームを基板接着用金属層上に接
着する従来のものに比べ、ろう材を不要とすると
共に、基板電位供給用のリードフレームの接続作
業性を大きく向上させることができる。つまり、
微細な接続箇所へのろう材の供給や接続部材の加
熱等を必要とせず、工程を簡素化できるので、作
業時間の短縮が可能となり、自動化も容易にな
る。さらに、ろう付けによる接続でないため、半
導体基板を金属層に接着する際の熱によつて、リ
ードフレームと金属層を接続するろう材が溶けて
接続不良を起こすこともない。 As described above, according to the semiconductor device according to the present invention, the inner tip of the lead frame for supplying substrate potential is directly welded to the metal layer for bonding the substrate by laser welding. The reliability of adhesion is significantly improved compared to the method in which the lead frame is connected to the metal layer through thin wires, and it also requires less brazing material compared to the conventional method in which the lead frame is bonded to the metal layer for substrate adhesion by brazing. This can be eliminated and the workability of connecting the lead frame for supplying the substrate potential can be greatly improved. In other words,
It is not necessary to supply brazing material to minute connection points or heat connection members, etc., and the process can be simplified, so it is possible to shorten working time and facilitate automation. Furthermore, since the connection is not made by brazing, the heat generated when bonding the semiconductor substrate to the metal layer will not melt the brazing material that connects the lead frame and the metal layer, causing a connection failure.
第１図、第２図、第３図は各々従来の半導体装
置の断面図、第４図は本考案の実施例を示す半導
体装置の部分斜視図、第５図は同断面図である。
２……基板接着用金属層、４……半導体基板、
５……セラミツクベース、６……ガラス層、１１
……基板電位供給用リードフレーム。
1, 2, and 3 are sectional views of conventional semiconductor devices, FIG. 4 is a partial perspective view of a semiconductor device showing an embodiment of the present invention, and FIG. 5 is a sectional view of the same. 2...Metal layer for substrate adhesion, 4...Semiconductor substrate,
5...Ceramic base, 6...Glass layer, 11
...Lead frame for supplying substrate potential.
Claims (1)
半導体基板接着用金属層に基板電位供給用リード
フレームの先端をレーザ溶接により熔着したこと
を特徴とする半導体装置。 A semiconductor device characterized in that the tip of a lead frame for supplying a substrate potential is fused by laser welding to a metal layer for bonding a semiconductor substrate formed on the bottom surface of a central recess of a ceramic base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11125482U JPS5916147U (en) | 1982-07-22 | 1982-07-22 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11125482U JPS5916147U (en) | 1982-07-22 | 1982-07-22 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5916147U JPS5916147U (en) | 1984-01-31 |
| JPS635234Y2 true JPS635234Y2 (en) | 1988-02-12 |
Family
ID=30258401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11125482U Granted JPS5916147U (en) | 1982-07-22 | 1982-07-22 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916147U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582456A (en) * | 1978-12-18 | 1980-06-21 | Mitsubishi Electric Corp | Semiconductor device |
-
1982
- 1982-07-22 JP JP11125482U patent/JPS5916147U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582456A (en) * | 1978-12-18 | 1980-06-21 | Mitsubishi Electric Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5916147U (en) | 1984-01-31 |
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