JPS63296021A - Liquid crystal display panel and its production - Google Patents
Liquid crystal display panel and its productionInfo
- Publication number
- JPS63296021A JPS63296021A JP12999687A JP12999687A JPS63296021A JP S63296021 A JPS63296021 A JP S63296021A JP 12999687 A JP12999687 A JP 12999687A JP 12999687 A JP12999687 A JP 12999687A JP S63296021 A JPS63296021 A JP S63296021A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal display
- display panel
- molybdenum
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 18
- 150000002739 metals Chemical class 0.000 claims abstract description 14
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 13
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 13
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000000206 photolithography Methods 0.000 claims abstract description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 25
- 239000011733 molybdenum Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 239000010937 tungsten Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 32
- 239000011521 glass Substances 0.000 abstract description 7
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000012789 electroconductive film Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は液晶表示パネルおよびその製造方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a liquid crystal display panel and a method for manufacturing the same.
［従来の技術］
従来・、液晶表示パネルには、透明導電膜上に金属電極
が設けられた液晶表示パネル基板が用いられているが、
該金属電極にはアルミニウムが多く使用されていた。ア
ルミニウムが多く用いられているのは、低抵抗、低価格
および微細加工性を良好に行うことができる等の理由が
あるためである。[Prior Art] Conventionally, liquid crystal display panels have used liquid crystal display panel substrates in which metal electrodes are provided on transparent conductive films.
Aluminum is often used for the metal electrode. Aluminum is often used because of its low resistance, low cost, and good microfabriability.
しかし、金属電極用の薄膜に要求される特性としては、
上記の他に耐腐食性、下地との密着性、透明導電膜に対
する耐反応性、耐熱性等が要求される。However, the characteristics required for thin films for metal electrodes are as follows:
In addition to the above, corrosion resistance, adhesion to the base, reaction resistance to the transparent conductive film, heat resistance, etc. are required.
これに対して、アルミニウムは、融点が低く耐熱性に乏
しく、ガラス基板との密着性が悪く、パターンの微細化
にともないエレクトロマイグレーションを起こすなど信
頼性に乏しい等の欠点を有する。On the other hand, aluminum has drawbacks such as a low melting point, poor heat resistance, poor adhesion to a glass substrate, and poor reliability such as electromigration that occurs as patterns become finer.
また、透明導電膜に１丁０を用いる場合には、アルミニ
ウムと［ＴＯが化学反応を起こしピンホールが発生する
原因となるという問題もある。Further, when using 1-0 as a transparent conductive film, there is a problem in that aluminum and [TO undergo a chemical reaction, which causes pinholes to occur.
［発明が解決しようとする問題点〕
本発明の目的は、上記の様な従来技術の欠点を除去し、
透明導電膜のピンホールの発生を低減し、信頼性に優れ
た液晶表示パネルを歩留りよく提供することにある。[Problems to be Solved by the Invention] The purpose of the present invention is to eliminate the drawbacks of the prior art as described above,
An object of the present invention is to reduce the occurrence of pinholes in a transparent conductive film and provide a highly reliable liquid crystal display panel with a high yield.
［問題点を解決するための手段］
即ち、本発明の第一の発明は、液晶表示パネル基板にお
いて、基板上に設けられた透明導電膜上に、モリブデン
、チタン、クロム、タンタル、タングステンおよびニッ
ケルより選ばれた１種または２種以上の金属からなる金
属電極を積層してなることを特徴とする液晶表示パネル
である。[Means for Solving the Problems] That is, the first invention of the present invention provides a liquid crystal display panel substrate in which molybdenum, titanium, chromium, tantalum, tungsten and nickel are formed on a transparent conductive film provided on the substrate. This is a liquid crystal display panel characterized by laminating metal electrodes made of one or more selected metals.
また、第二の発明は、基板上に設けられた透明導電膜上
に、モリブデン、チタン、クロム、タンタル、タングス
テン３よびニッケルより選ばれた１種または２種以上の
金属からなる金属被膜を形成し１次いで該金属被膜を、
水素、ヘリウムまたはアルゴンプラズマ雰囲気中でフォ
ーミングを行った後、フォトリソ、エツチング工程によ
りバターニングして金属電極を形成することを特徴とす
る液晶表示パネルの製造方法である。Further, the second invention forms a metal coating made of one or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten 3, and nickel on a transparent conductive film provided on a substrate. 1. Then the metal coating is
This method of manufacturing a liquid crystal display panel is characterized in that forming is performed in a hydrogen, helium, or argon plasma atmosphere, and then patterning is performed using photolithography and etching steps to form metal electrodes.
第１図は本発明の液晶表示パネルの一例を示す断面図で
ある。同第１図において、本発明の液晶表示パネルは、
ガラス基板ｌの上に、ＩＴＯからなる透゛明導電ｇ２を
設け、該透明導電膜２上の端部に沿って金属電極３を８
層してなるものである。FIG. 1 is a sectional view showing an example of the liquid crystal display panel of the present invention. In FIG. 1, the liquid crystal display panel of the present invention is
A transparent conductive film g2 made of ITO is provided on a glass substrate l, and a metal electrode 3 is formed along the edge of the transparent conductive film 2.
It is made up of layers.
本発明において、金属電極３はモリブデン、チタン、ク
ロム、タンタル、タングステンおよびニッケルより選ば
れた１種または２種以上の金属が用いられる。２種以上
の金属としては、モリブデン、チタン、クロム、タンタ
ル、タングステンおよびニッケルより選ばれた２種以上
の金属の合金が用いられる。これ等の金属の中で、特に
モリブデン、モリブデンとタンタルの合金が好ましい。In the present invention, the metal electrode 3 is made of one or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel. As the two or more metals, an alloy of two or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel is used. Among these metals, molybdenum and an alloy of molybdenum and tantalum are particularly preferred.
本発明の液晶表示パネルは、基板上に透明導電膜を成膜
し、７オトリソ、エツチング工程によりパターンを形成
し、次いで前記透明導電膜上にモリブデン、チタン、ク
ロム、タンタル、タングステンおよびニッケルより選ば
れた１種または２種以上の金属の被膜を形成し、フォト
リソ、エツチング工程によりバターニングして、透明導
電膜上に金属電極を積層することにより容易に製造する
ことができる。In the liquid crystal display panel of the present invention, a transparent conductive film is formed on a substrate, a pattern is formed by seven etching processes, and then a pattern selected from molybdenum, titanium, chromium, tantalum, tungsten and nickel is formed on the transparent conductive film. It can be easily manufactured by forming a film of one or more metals, patterning it by photolithography and etching, and laminating a metal electrode on the transparent conductive film.
特に、本発明の液晶表示パネルを製造する方法において
、基板上に設けられた透明導電膜のパターンの上に、モ
リブデン、チタン、クロム、タンタル、タングステンお
よびニッケルより選ばれた１種または２種以上の金属被
膜を形成し、次いで該金属被膜の表面を水素、ヘリウム
又はアルゴンプラズマ雰囲気中でフォーミングを行った
後、フォトリソ、エツチング工程によりバターニングす
ると、前記金属被膜の表面が粗くなり、レジストとの密
着性が良好となり、精密なパターンの配線を形成するこ
とができる。In particular, in the method for manufacturing a liquid crystal display panel of the present invention, one or more selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel are applied on a pattern of a transparent conductive film provided on a substrate. When a metal film is formed, the surface of the metal film is formed in a hydrogen, helium or argon plasma atmosphere, and then buttered by a photolithography or etching process, the surface of the metal film becomes rough and there is a problem with the resist. Adhesion is improved and wiring with a precise pattern can be formed.
本発明において、透明導電膜の膜厚は通常２００〜２０
００人、好ましくは４００〜１２００人が望ましい。In the present invention, the thickness of the transparent conductive film is usually 200 to 20
00 people, preferably 400 to 1200 people.
また、金属電極の膜厚は通常５００〜１００００人。Further, the thickness of the metal electrode is usually 500 to 10,000.
好ましくは１０００〜３０００人が望ましい。Preferably 1000 to 3000 people.
フォトリソ、エツチング工程は、特に限定することはな
く通常の方法で行うことができるが、フォトリソ工程に
は、通常ポジ型のレジスト、例えば、０ＦＰＲ−８００
（東京応化製）、針−３１４００（シブレイ社製）を使
用し、現像にはアルカリ系の現像液を用いるのが好まし
い。The photolithography and etching processes are not particularly limited and can be carried out in a conventional manner.
(manufactured by Tokyo Ohka) and Needle-31400 (manufactured by Sibley), and it is preferable to use an alkaline developer for development.
［作用］
本発明の液晶表示パネルは、液晶表示パネル基板におい
て、基板上に設けられた透明導電膜上に、モリブデン、
チタン、クロム、タンタル、タングステンおよびニッケ
ルより選ばれた１種または２種以上の金属からなる金属
電極を積層してなるので、金属電極と透明導電膜とは密
着性がよく、化学的に安定であるために、ピンホール等
の発生がなく、信頼性のある配線を行うことができる。[Function] In the liquid crystal display panel of the present invention, in the liquid crystal display panel substrate, molybdenum, molybdenum,
It is made by laminating metal electrodes made of one or more metals selected from titanium, chromium, tantalum, tungsten, and nickel, so the metal electrodes and transparent conductive film have good adhesion and are chemically stable. Because of this, reliable wiring can be performed without the occurrence of pinholes or the like.
［実施例］ 以下、実施例を示し本発明をさらに具体的に説明する。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例１
ガラス基板上にスパッタ法で厚さ１１００人のＩＴＯ膜
を成膜し、フォトリソ工程にはポジ型のレジスト［０Ｆ
ＰＲ−８００（東京応化型）］を使用し、現像にはアル
カリ系の現像液［ＮＭＤ−３（東京応化■製）コを使用
し、通常のフォトリソ、エツチング工程により不要部分
を除去し、ピッチ２５０終■、ライン幅２４５ ｇ厘の
透明導電膜のパターンを形成した。Example 1 An ITO film with a thickness of 1100 mm was formed on a glass substrate by sputtering, and a positive resist [0F] was used in the photolithography process.
PR-800 (manufactured by Tokyo Ohka)], and an alkaline developer [NMD-3 (manufactured by Tokyo Ohka)] was used for development, and unnecessary parts were removed by normal photolithography and etching processes, and pitch was removed. A transparent conductive film pattern with a line width of 245 g was formed after 250 g.
次いで、前記透明導電膜のパターンの上にスパッタ法で
モリブデンを３０００人の厚さに成膜し、前記と同様の
フォトリソ、エツチング工程により、第１図に示す様に
、ＩＴＯ膜に沿って積層し、幅１０４ｍの金属電極を形
成した液晶表示パネル基板を得た。Next, a molybdenum film was formed to a thickness of 3,000 yen by sputtering on the pattern of the transparent conductive film, and by the same photolithography and etching process as above, it was laminated along the ITO film as shown in Figure 1. A liquid crystal display panel substrate on which metal electrodes with a width of 104 m were formed was obtained.
比較例１
金属電極材料にアルミニウムを用いて、実施例１と同様
の方法で液晶表示パネル基板を得た。Comparative Example 1 A liquid crystal display panel substrate was obtained in the same manner as in Example 1 using aluminum as the metal electrode material.
この比較例１の方法においては、特に、現像工程におい
てＩＴＯとアルミニウムが化学反応を起こし、ＩＴＯに
ピンホールが多数発生した。In the method of Comparative Example 1, a chemical reaction occurred between ITO and aluminum particularly in the developing step, and many pinholes were generated in the ITO.
実施例１の金属電極としてモリブデンを用いた場合と、
比較例１の金属電極としてアルミニウムを用いた場合に
ついて、発生したＩＴＯのピンホール密度を比較した一
例を第１表に示す。When molybdenum is used as the metal electrode in Example 1,
Table 1 shows an example of a comparison of the pinhole density of ITO generated in Comparative Example 1 in which aluminum was used as the metal electrode.
第 １ 表
第１表の結果から明らかな様に、アルカリ系の現像液中
で安定なモリブデンを用いることにより、配線パターン
の歩留りを著しく向上させることができる。しかも、モ
リブデンのような高融点金属は、抵抗率でアルミニウム
よりやや劣るものの、耐腐食性、耐熱性、下地との密着
性、微細加工性および信頼性（エレクトロマイグレーシ
ョンを起こしにくい）については、ＬＳＩプロセスにお
いて実証されている様に極めて良好である。Table 1 As is clear from the results in Table 1, by using molybdenum, which is stable in an alkaline developer, the yield of wiring patterns can be significantly improved. Furthermore, although high-melting point metals such as molybdenum are slightly inferior to aluminum in terms of resistivity, they are superior to LSIs in terms of corrosion resistance, heat resistance, adhesion to the substrate, micro-processability, and reliability (hard to cause electromigration). Very good as demonstrated in the process.
実施例２
第２図（ａ） 、 （ｂ）に示す方法により、液晶表示
パネルを製造した。Example 2 A liquid crystal display panel was manufactured by the method shown in FIGS. 2(a) and 2(b).
まず、ガラス基板１上にスパッタ法で厚さ人のＩＴＯ２
ａを成膜し、フォトリソ工程にはポジ型のレジスト［０
ＦＰＲ−８００（東京応化型）］を使用し、現像にはア
ルカリ系の現像液［ＮＭＤ−３（東京応化■製）コを使
用し、通常のフォトリソ、エツチング工程により不要部
分を除去し、ピッチ２５０μ腸、ライン幅２４５４ｓの
ＩＴＯのパターンを形成した。First, a thick layer of ITO2 was deposited on a glass substrate 1 by sputtering.
A is formed into a film, and a positive resist [0
FPR-800 (manufactured by Tokyo Ohka)], an alkaline developer [NMD-3 (manufactured by Tokyo Ohka)] was used for development, unnecessary parts were removed by normal photolithography and etching processes, and pitch was removed. An ITO pattern with a thickness of 250 μm and a line width of 2454 s was formed.
次いて、前記ｒＴＯ２ａのパターンの上にスパッタ法で
モリブデン３ａを３０００人の厚さに成膜した。（第２
図（ａ）参照）
その後、水素プラズマ雰囲気４中で約３分間フォーミン
グを行った。（第２図（ｂ）参照）フォーミングの条件
は、ガラス基板なカソードに固定し、ＲＦ電力０．０５
Ｗ／ｃｍ２．圧力３ ｍＴｏｒｒで行なった。Next, a film of molybdenum 3a was formed to a thickness of 3000 nm on the rTO2a pattern by sputtering. (Second
(See Figure (a)) After that, forming was performed in a hydrogen plasma atmosphere 4 for about 3 minutes. (See Fig. 2(b)) The forming conditions were that the cathode was fixed to a glass substrate, and the RF power was 0.05.
W/cm2. The pressure was 3 mTorr.
その後、前記と同様のフォトリソ、エツチング工程によ
り不要部分を除去し、ＩＴＯ膜に沿って積層した、幅５
終■のモリブデンを形成した液晶表示パネル基板を得た
。After that, unnecessary parts were removed by photolithography and etching processes similar to those described above, and a layer with a width of 5 mm was laminated along the ITO film.
A liquid crystal display panel substrate on which molybdenum was formed was obtained.
モリブデンの場−合、アルミニウムに比べてレジストと
の密着力がやや劣る傾向がある。これは表面の平坦性が
モリブデンの方がアルミニウムより良いことに起因して
いる。In the case of molybdenum, its adhesion to the resist tends to be slightly inferior to that of aluminum. This is because molybdenum has a better surface flatness than aluminum.
しかし、本実施例２における様に、モリブデンの被膜の
上にフォーミングを行うことにより、モリブデンとレジ
ストの密着力を向上することが可能となり、金属配線の
断線率が小さくなり歩留りの向上に寄与することができ
る。However, by performing forming on the molybdenum film as in Example 2, it is possible to improve the adhesion between the molybdenum and the resist, which reduces the disconnection rate of metal wiring and contributes to improved yield. be able to.
［発明の効果］
以上説明したように１本発明の液晶表示パネルは、透明
導電膜と接する金属電極にモリブデン。[Effects of the Invention] As explained above, in the liquid crystal display panel of the present invention, molybdenum is used in the metal electrode in contact with the transparent conductive film.
チタン、クロム、タンタル、タングステン、ニッケル又
はこれらの合金を用いることにより、透明導電膜のピン
ホールを低減し、信頼性に優れた効果が得られる。By using titanium, chromium, tantalum, tungsten, nickel, or an alloy thereof, pinholes in the transparent conductive film can be reduced and an effect with excellent reliability can be obtained.
また１本発明の液晶表示パネルの製造方法によれば、金
属電極の表面を、水素、アルゴン又はヘリウムプラズマ
中でフォーミングすることにより、金属配線の断線を低
減し、歩留を向上することができる。Furthermore, according to the method for manufacturing a liquid crystal display panel of the present invention, by forming the surface of the metal electrode in hydrogen, argon, or helium plasma, disconnection of metal wiring can be reduced and yield can be improved. .
第１図は本発明の液晶表示パネルの一例を示す断面図お
よび第２図（ａ） 、 （ｂ）は本発明の液晶表示パネ
ルの製造方法の一例を示す工程図である。
ｉ−・・ガラス基板 ２・・・透明導電膜２ ａ
−−−ＩＴＯ３−−−金属電極３ａ・・・モリブデン
４・・・水素プラズマ雰囲気FIG. 1 is a sectional view showing an example of the liquid crystal display panel of the present invention, and FIGS. 2(a) and 2(b) are process diagrams showing an example of the method for manufacturing the liquid crystal display panel of the present invention. i-... Glass substrate 2... Transparent conductive film 2 a
---ITO3---Metal electrode 3a...Molybdenum 4...Hydrogen plasma atmosphere
Claims (4)
た透明導電膜上に、モリブデン、チタン、クロム、タン
タル、タングステンおよびニッケルより選ばれた１種ま
たは２種以上の金属からなる金属電極を積層してなるこ
とを特徴とする液晶表示パネル。(1) In a liquid crystal display panel substrate, a metal electrode made of one or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel is laminated on a transparent conductive film provided on the substrate. A liquid crystal display panel characterized by:
タル、タングステンおよびニッケルより選ばれた２種以
上の金属の合金からなる特許請求の範囲第１項記載の液
晶表示パネル。(2) The liquid crystal display panel according to claim 1, wherein the metal electrode is made of an alloy of two or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel.
、チタン、クロム、タンタル、タングステンおよびニッ
ケルより選ばれた１種または２種以上の金属からなる金
属被膜を形成し、次いで該金属被膜を、水素、ヘリウム
またはアルゴンプラズマ雰囲気中でフォーミングを行っ
た後、フォトリソ、エッチング工程によりパターニング
して金属電極を形成することを特徴とする液晶表示パネ
ルの製造方法。(3) A metal coating made of one or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel is formed on the transparent conductive film provided on the substrate, and then the metal coating is formed on the transparent conductive film provided on the substrate. A method for producing a liquid crystal display panel, comprising forming the above in a hydrogen, helium, or argon plasma atmosphere, and then patterning by photolithography and etching steps to form metal electrodes.
タル、タングステンおよびニッケルより選ばれた２種以
上の金属の合金からなる特許請求の範囲第３項記載の液
晶表示パネルの製造方法。(4) The method for manufacturing a liquid crystal display panel according to claim 3, wherein the metal electrode is made of an alloy of two or more metals selected from molybdenum, titanium, chromium, tantalum, tungsten, and nickel.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62129996A JP2652018B2 (en) | 1987-05-28 | 1987-05-28 | Liquid crystal display panel substrate, liquid crystal display panel and method of manufacturing the same |
| US07/193,060 US4859036A (en) | 1987-05-15 | 1988-05-12 | Device plate having conductive films selected to prevent pin-holes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62129996A JP2652018B2 (en) | 1987-05-28 | 1987-05-28 | Liquid crystal display panel substrate, liquid crystal display panel and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63296021A true JPS63296021A (en) | 1988-12-02 |
| JP2652018B2 JP2652018B2 (en) | 1997-09-10 |
Family
ID=15023568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62129996A Expired - Fee Related JP2652018B2 (en) | 1987-05-15 | 1987-05-28 | Liquid crystal display panel substrate, liquid crystal display panel and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2652018B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06162788A (en) * | 1992-11-26 | 1994-06-10 | Sharp Corp | Non-volatile recorder |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62127586A (en) * | 1985-11-28 | 1987-06-09 | 三菱樹脂株式会社 | Method of executing piping |
| JPS63195687A (en) * | 1987-02-09 | 1988-08-12 | セイコーエプソン株式会社 | Terminal construction of active matrix substrate |
| JPS63271318A (en) * | 1987-04-30 | 1988-11-09 | Toppan Printing Co Ltd | Electrode plate for display device |
| JPS63289533A (en) * | 1987-05-22 | 1988-11-28 | Oki Electric Ind Co Ltd | Liquid crystal display device |
-
1987
- 1987-05-28 JP JP62129996A patent/JP2652018B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62127586A (en) * | 1985-11-28 | 1987-06-09 | 三菱樹脂株式会社 | Method of executing piping |
| JPS63195687A (en) * | 1987-02-09 | 1988-08-12 | セイコーエプソン株式会社 | Terminal construction of active matrix substrate |
| JPS63271318A (en) * | 1987-04-30 | 1988-11-09 | Toppan Printing Co Ltd | Electrode plate for display device |
| JPS63289533A (en) * | 1987-05-22 | 1988-11-28 | Oki Electric Ind Co Ltd | Liquid crystal display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06162788A (en) * | 1992-11-26 | 1994-06-10 | Sharp Corp | Non-volatile recorder |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2652018B2 (en) | 1997-09-10 |
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