JPH0239044B2 - - Google Patents
Info
- Publication number
- JPH0239044B2 JPH0239044B2 JP57026105A JP2610582A JPH0239044B2 JP H0239044 B2 JPH0239044 B2 JP H0239044B2 JP 57026105 A JP57026105 A JP 57026105A JP 2610582 A JP2610582 A JP 2610582A JP H0239044 B2 JPH0239044 B2 JP H0239044B2
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- film
- etching
- transparent
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 239000010410 layer Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004353 Ti-Cu Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
本発明は電極板及びその製造方法に係り、特に
表示パネル、透明パネルヒータ等に用いられる電
極板及びその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode plate and a method for manufacturing the same, and more particularly to an electrode plate used for display panels, transparent panel heaters, etc. and a method for manufacturing the same.
例えば、液晶表示パネルの一例を第１図に示
す。第１図ａは平面図、第１図ｂはＡ−A′断面
図である。 For example, an example of a liquid crystal display panel is shown in FIG. FIG. 1a is a plan view, and FIG. 1b is a sectional view taken along line A-A'.
第１図に於いて、１，２はガラス、プラスチツ
ク等の透明絶縁基板、３，４は基板１，２のそれ
ぞれの対向面に設けられたIn2O3、SnO2及びこれ
らの混合膜等の透明導電膜、５は基板１の透明導
電膜４上に形成されるAu、Al、Cu等の金属膜、
３は外部回路との接続端子となる。６は基板１，
２の一定間隔（例えば、10μｍ）の間に封入され
た液晶であり、７は封止剤である。透明導電膜３
と４との対向部分と、それらの間に位置する液晶
とによつて画素が形成される。 In FIG. 1, 1 and 2 are transparent insulating substrates made of glass, plastic, etc., and 3 and 4 are In 2 O 3 , SnO 2 , mixed films of these, etc. provided on the opposing surfaces of the substrates 1 and 2, respectively. 5 is a metal film such as Au, Al, Cu, etc. formed on the transparent conductive film 4 of the substrate 1;
3 is a connection terminal with an external circuit. 6 is the substrate 1,
2 is a liquid crystal sealed between fixed intervals (for example, 10 μm), and 7 is a sealant. Transparent conductive film 3
A pixel is formed by the opposing portions of and 4 and the liquid crystal located between them.
第１図ａの基板２の部分Ｂの拡大平面図を第２
図ａに、第２図ａのＣ−C′断面図を第２図ｂに示
す。 The enlarged plan view of part B of the substrate 2 in FIG.
FIG. 2b shows a sectional view taken along the line C-C' in FIG. 2a.
透明導電膜４は電気抵抗が大きいために、第２
図ａに示すように微細パターンでかつ電極形成距
離が長くなると、外部回路との接続部からはなれ
た部分の像が暗くなつたり、点灯しなくなつたり
するという問題が生じる。これを解決するため
に、第２図に示す様に、Au、Al、Cu等の抵抗の
低い金属膜５を透明導電膜４上に形成する。 Since the transparent conductive film 4 has a large electrical resistance, the second
As shown in Figure a, when the pattern is fine and the distance between the electrodes is long, there arises a problem that the image becomes dark or the image does not turn on at the part away from the connection with the external circuit. In order to solve this problem, as shown in FIG. 2, a metal film 5 of low resistance such as Au, Al, Cu, etc. is formed on the transparent conductive film 4.
透明導電膜４及び金属膜５を形成する従来の方
法の一例を第３図に示す。 An example of a conventional method for forming the transparent conductive film 4 and the metal film 5 is shown in FIG.
まず第３図ａに示すように洗浄されたガラス、
プラスチツクフイルム等の透明絶縁基板２上に透
明導電膜であるIn2O3４０を蒸着し、続いて金属
膜であるAu５０を蒸着する。ついで、第３図ｂ
に示すように第１のホトレジストパターン８１を
形成し、第３図ｃに示すように、この第１のホト
レジストパターン８１をマスクにしてAu５０を
ヨード系の水溶液でエツチングしてAuのパター
ン５１を形成する。ついでAuのパターン５１を
マスクにして第３図ｄのようにIn2O3４０を塩化
第２鉄水溶液、王水系水溶液でエツチングして、
所望のパターンのIn2O3４を形成する。 First, as shown in Figure 3a, the cleaned glass,
A transparent conductive film of In 2 O 3 40 is deposited on a transparent insulating substrate 2 such as a plastic film, and then a metal film of Au 50 is deposited. Next, Figure 3b
As shown in FIG. 3C, a first photoresist pattern 81 is formed, and as shown in FIG. do. Next, using the Au pattern 51 as a mask, the In 2 O 3 40 was etched with a ferric chloride aqueous solution and an aqua regia solution as shown in FIG. 3d.
Form In 2 O 3 4 in a desired pattern.
その後ホトレジストを通常の手法で除去後、第
３図ｅのように、Auのパターン５１の１部に第
２のホトレジストパターン８２を形成する。その
パターンをマスクにしてAuだけをヨード系のエ
ツチング液でエツチングすると、第３図ｆに示す
ように、In2O3４上にのみAu５の導電回路が形成
された基板２が作成できる。 Thereafter, after removing the photoresist using a conventional method, a second photoresist pattern 82 is formed on a portion of the Au pattern 51, as shown in FIG. 3e. By using this pattern as a mask and etching only Au with an iodine etching solution, a substrate 2 with conductive circuits of Au 5 formed only on In 2 O 3 4 can be produced as shown in FIG. 3F.
従来では金属膜としてAl、Au、Ag、Cu、Ni、
Crが単層膜として用いられている。 Conventionally, metal films include Al, Au, Ag, Cu, Ni,
Cr is used as a single layer film.
しかし、これらの単層膜はいずれも欠点がある
ことがわかつた。 However, it has been found that these single-layer films all have drawbacks.
まず、Alの単層膜は、エツチング時のパター
ン精度、半田付性もよく、かつ透明導電膜
（In2O3、SnO2）との密着性もよい。しかし、Al
をエツチングする際に発生する水素により、透明
導電膜が還元され、ピンホールを生ずる。さら
に、Alの単層膜を形成した後、透明導電膜の一
部の酸素がAlにくわれ、Alパターンにふくれが
発生することが認められ、好ましくない。 First, a single layer film of Al has good pattern accuracy during etching, good solderability, and good adhesion to a transparent conductive film (In 2 O 3 , SnO 2 ). However, Al
The hydrogen generated during etching reduces the transparent conductive film, creating pinholes. Furthermore, after forming a single layer film of Al, some of the oxygen in the transparent conductive film is absorbed by the Al, and it is observed that the Al pattern bulges, which is not preferable.
さらに、Au、Ag及びCuの単層膜は、透明導電
膜との化学反応はないが、基板および透明導電膜
との密着性が悪く、はく離することがわかつた。
さらに、Auに関しては、接続端子において、半
田にAuがくわれ、接続不可能となる。 Furthermore, it was found that the single-layer films of Au, Ag, and Cu do not have any chemical reaction with the transparent conductive film, but have poor adhesion to the substrate and the transparent conductive film, resulting in peeling.
Furthermore, regarding Au, the solder gets stuck in the connection terminal, making connection impossible.
さらに、Niの単層膜に関してはエツチング時
のパターン精度もよく、かつ半田付性も比較的良
好であるが、基板との密着性が不十分で、かつ接
続端子の半田付後の強度が不十分であるため、時
時はく離する現象が認められた。 Furthermore, although the Ni single-layer film has good pattern accuracy during etching and relatively good solderability, its adhesion to the board is insufficient and the strength of the connection terminal after soldering is insufficient. Because the coating was sufficient, a phenomenon of peeling from time to time was observed.
また、Crの単層膜に関しては、その他の金属
に比較して、抵抗が大きいという問題があるが、
基板および透明導電膜との密着性は非常によいこ
とがわかつた。しかし、半田のぬれ性が悪く、半
田による接続ができないことが明らかになつた。 Additionally, Cr single-layer films have the problem of higher resistance than other metals.
It was found that the adhesion between the substrate and the transparent conductive film was very good. However, it became clear that the wettability of the solder was poor and connection by solder was impossible.
さらに、透明導電膜であるIn2O3４０のエツチ
ング液塩化第２鉄水溶液、王水系水溶液は、
In2O3４０のアンダーカツトが大きく、パターン
精度が悪くなる、という欠点がある。 Furthermore, the etching solution of In 2 O 3 40, which is a transparent conductive film, is a ferric chloride aqueous solution and an aqua regia based aqueous solution.
The drawback is that the undercut of In 2 O 3 40 is large, resulting in poor pattern accuracy.
本発明の目的とするところは、抵抗が小さく、
ホトエツチングが容易で、精度良くパターニング
でき、基板及び透明導電膜との密着性がよく、か
つ半田付性がよく、化学的に安定性が高い金属膜
を有する電極板及びその製造方法を提供すること
にある。 The object of the present invention is to have low resistance and
To provide an electrode plate having a metal film that can be easily photoetched, can be patterned with high precision, has good adhesion to a substrate and a transparent conductive film, has good solderability, and has high chemical stability, and a method for manufacturing the same. It is in.
上記目的を達成する本発明の特徴とするところ
は、透明絶縁基板上に形成された透明導電膜から
なる複数の透明電極と、この透明電極の一部に密
着して形成され、複数の透明電極と接続端子部と
を接続するCr、Cr合金、或いはTiからなる第１
の金属膜と、この第１の金属膜上に形成され、
Ni、Au或いはCuからなる第２の金属膜とを有す
ることにある。さらには、透明絶縁基板上に透明
導電膜を形成する第１の工程と、透明導電膜上に
Cr、Cr合金、或いはTiからなる第１の金属膜を
形成する第２の工程と、第１の金属膜上にNi、
Au或いはCuからなる第２の金属膜を形成する第
３の工程と、第２の金属膜上に第１のエツチング
レジストパターンを形成する第４の工程と、第１
のエツチングレジストパターンをマスクにして、
透明導電膜、第１の金属膜及び第２の金属膜をエ
ツチング除去し、複数の透明電極とこれらの複数
の透明電極と接続端子部とを接続する２層構造の
金属膜とからなるパターンを形成する第５の工程
と、第１のエツチングレジストを除去する第６の
工程と、第２の金属膜上に第１のエツチングレジ
ストパターンよりも小さい第２のエツチングレジ
ストパターンを形成する第７の工程と、第２のエ
ツチングレジストパターンをマスクにして、透明
電極上の第１の金属膜及び第２の金属膜のみをエ
ツチング除去する第８の工程と、第２のエツチン
グレジストを除去する第９の工程とを有すること
にある。 The present invention is characterized by a plurality of transparent electrodes made of a transparent conductive film formed on a transparent insulating substrate, and a plurality of transparent electrodes formed in close contact with a part of the transparent electrodes. A first layer made of Cr, Cr alloy, or Ti that connects the
a metal film formed on the first metal film,
and a second metal film made of Ni, Au, or Cu. Furthermore, a first step of forming a transparent conductive film on a transparent insulating substrate, and a first step of forming a transparent conductive film on a transparent insulating substrate.
a second step of forming a first metal film made of Cr, Cr alloy, or Ti; and a second step of forming a first metal film made of Cr, Cr alloy, or Ti;
A third step of forming a second metal film made of Au or Cu, a fourth step of forming a first etching resist pattern on the second metal film, and a fourth step of forming a first etching resist pattern on the second metal film.
Using the etching resist pattern as a mask,
The transparent conductive film, the first metal film, and the second metal film are removed by etching to form a pattern consisting of a plurality of transparent electrodes and a two-layer metal film connecting the plurality of transparent electrodes and the connection terminal portion. a fifth step of forming an etching resist; a sixth step of removing the first etching resist; and a seventh step of forming a second etching resist pattern smaller than the first etching resist pattern on the second metal film. an eighth step of etching away only the first metal film and the second metal film on the transparent electrode using the second etching resist pattern as a mask; and a ninth step of removing the second etching resist. The process is as follows.
本発明の一実施例を第４図により説明する。 An embodiment of the present invention will be explained with reference to FIG.
洗浄されたガラス、プラスチツクフイルム等の
透明絶縁基板２上に透明導電膜であるIn2O3４０
（厚さ400〜500Å）を蒸着し、続いてCr膜１１
０、Ni膜１２０を真空蒸着及びスパツタリング
法により積層する。この工程は、なるべく同一真
空蒸着装置内で連続して行なつた方が好ましい。
（第４図ａ）
次に、第２図ａに示す透明導電膜のパターン５
の形状の第１のホトレジストパターン９１を形成
する。（第４図ｂ）
第１のホトレジストパターン９１をマスクとし
てNi膜１２０を〔エツチング液；HNO3：H2O2
＝10：１（容量比）、エツチング速度；22nｍ／sec
（25℃）〕または〔エツチング液；CH3COOH：
HNO3：H3PO4：H2SO4＝５：３：１：１（容量
比）、エツチング速度；8nｍ／sec（25℃）〕の条件
でケミカルエツチングを行なう。これらのエツチ
ング液はアンダーカツトが少ない。 In 2 O 3 40, which is a transparent conductive film, is placed on a transparent insulating substrate 2 made of cleaned glass, plastic film, etc.
(thickness 400 to 500 Å), and then Cr film 11
0. A Ni film 120 is laminated by vacuum evaporation and sputtering. It is preferable that this step be performed continuously in the same vacuum evaporation apparatus.
(Figure 4a) Next, pattern 5 of the transparent conductive film shown in Figure 2a
A first photoresist pattern 91 having the shape of is formed. (FIG. 4b) Using the first photoresist pattern 91 as a mask, the Ni film 120 is etched using an etching solution: HNO 3 :H 2 O 2
=10:1 (capacity ratio), etching speed: 22nm/sec
(25℃)] or [etching solution; CH 3 COOH:
Chemical etching was performed under the following conditions: HNO 3 :H 3 PO 4 :H 2 SO 4 =5:3:1:1 (capacity ratio), etching rate: 8 nm/sec (25°C). These etching solutions have less undercut.
次にCr膜１１０を〔エツチング液；25％Ce
（NO3）・2NH4NO3溶液、エツチング速度；6.5n
ｍ／sec（25℃）〕の条件でケミカルエツチングを
行なう。（第４図ｂ）
このエツチング溶液はアンダーカツトが小さ
く、かつNi１２０とIn2O4膜４０との選択エツチ
ング性も好適である。 Next, the Cr film 110 was etched using an etching solution of 25% Ce.
(NO 3 )・2NH 4 NO 3 solution, etching rate: 6.5n
Chemical etching is performed under the following conditions: m/sec (25°C)]. (FIG. 4b) This etching solution has a small undercut and is suitable for selectively etching the Ni 120 and the In 2 O 4 film 40.
次に、In2O3膜４０を〔エツチング液；47％
HBr溶液、エツチング速度；42nｍ／sec（35℃）〕
または〔エツチング液；57％HI溶液、エツチン
グ速度；60nｍ／sec（35℃）〕の条件でケミカルエ
ツチングを行ない、第２図ａに示す透明導電膜の
パターン形状のIn2O3４を形成する。（第４図ｃ）
これらのエツチング液は、アンダーカツトが少な
く、かつNi１２０、Cr１１０との選択エツチン
グ性も好適であるが、HBr溶液の方が安価であ
るので、コスト低減になる。 Next, the In 2 O 3 film 40 was etched with an etching solution of 47%.
HBr solution, etching speed: 42nm/sec (35℃)]
Alternatively, chemical etching is performed under the conditions of [etching solution: 57% HI solution, etching speed: 60 nm/sec (35°C)] to form In 2 O 3 4 in the pattern shape of the transparent conductive film shown in Figure 2a. . (Figure 4c)
These etching solutions have little undercutting and are suitable for selectively etching Ni120 and Cr110, but the HBr solution is cheaper and therefore reduces costs.
次にキシレン系のホトレジスト除去液等の第１
のホトレジストパターン９１を剥離する。 Next, apply a first layer of xylene-based photoresist removal liquid, etc.
The photoresist pattern 91 is peeled off.
次に、第２図ａに示す金属膜のパターン５形状
の第２のホトレジストパターン９２をNi膜１２
０上に形成する。（第４図ｄ）
第２のホトレジストパターン９２をマスクとし
て、前述の同様の条件で、Ni膜１２０とCr膜１
１０をケミカルエツチングし、第２図ａに示す金
属膜のパターン５の形状のNi１２とCr１１とを
形成する。（第４図ｅ）
次にキシレン系ホトレジスト除去液等で第２の
ホトレジストパターン９２を剥離して、第２図
ａ，ｂに示すような所望のパターンが形成され
る。（第４図ｆ）
本実施例によつて得られたCr−Ni二層膜では、
基板２およびIn2O3４との密着性は下層がCr１１
であることから良好で、かつ、接続端子部での半
田付性は上層がNi１２であることから良いこと
を確認した。 Next, a second photoresist pattern 92 having the shape of the metal film pattern 5 shown in FIG. 2a is applied to the Ni film 12.
Formed on 0. (FIG. 4d) Using the second photoresist pattern 92 as a mask, the Ni film 120 and the Cr film 1 are formed under the same conditions as described above.
10 is chemically etched to form Ni 12 and Cr 11 in the shape of the metal film pattern 5 shown in FIG. 2a. (FIG. 4e) Next, the second photoresist pattern 92 is removed using a xylene-based photoresist removal liquid or the like to form a desired pattern as shown in FIGS. 2a and 2b. (Fig. 4f) In the Cr-Ni double layer film obtained in this example,
The adhesion with the substrate 2 and In 2 O 3 4 is that the lower layer is Cr11.
It was confirmed that the solderability at the connection terminal part was good because the upper layer was made of Ni12.
また、Cr−Ni二層膜において、Cr１１は密着
性をとる役目であることからCr膜厚は250Å以上
あればよいことがわかつた。250Å以下の場合、
Cr１１が面内で島状になり、つながらないこと
から基板２およびIn2O3４の密着性がとれないこ
とがわかつた。しかし、Cr膜厚は電気抵抗の点
で必要以上に厚くする必要がなく、250〜1000Å
の範囲が最適である。また、Ni１２は、電気抵
抗を小さくする役目を持つており、1000Å程度あ
れば、0.8Ω／sqの抵抗値があるため、金属膜の
幅が10μ程度の微細パターンになつたとしても十
分であることを確認している。 Furthermore, in the Cr--Ni double layer film, since Cr11 plays a role in providing adhesion, it was found that the Cr film thickness should be at least 250 Å. If it is less than 250Å,
It was found that the substrate 2 and the In 2 O 3 4 could not have good adhesion because the Cr 11 became island-like in the plane and did not connect. However, from the point of view of electrical resistance, the Cr film does not need to be thicker than necessary;
A range of is optimal. In addition, Ni12 has the role of reducing electrical resistance, and if it is about 1000Å, it has a resistance value of 0.8Ω/sq, so it is sufficient even if the metal film has a fine pattern of about 10μ in width. We have confirmed that.
尚、本実施例に於いては、透明導電膜として
In2O3を例にとつて説明したが、これ以外にも
SnO2でも良い。 In this example, as a transparent conductive film,
I explained using In 2 O 3 as an example, but there are other cases as well.
SnO2 may also be used.
また、金属膜としては、Cr−Ni膜に限定する
必要はなく、電気抵抗が小さく、ホトエツチング
が容易で、精度良くパターニングでき、基板及び
透明導電膜との密着性が良く、かつ半田付性がよ
く、化学的に安定性が高いことを満足する金属、
Cr−Cu、Cr−Au、NiCr−Cu、NiCr−Au、Ti
−Ni、Ti−Cu、Ti−Au等にも本発明は適用で
きうる。なお、Cr−Au、NiCr−Au及びTi−Au
の場合は、Auの膜厚は厚くして、半田くわれを
防止する必要がある。 Furthermore, the metal film need not be limited to a Cr-Ni film; it has low electrical resistance, is easy to photo-etch, can be patterned with high precision, has good adhesion to the substrate and transparent conductive film, and has good solderability. Metals that are well satisfied with high chemical stability,
Cr-Cu, Cr-Au, NiCr-Cu, NiCr-Au, Ti
The present invention can also be applied to -Ni, Ti-Cu, Ti-Au, etc. In addition, Cr-Au, NiCr-Au and Ti-Au
In this case, the Au film must be thick to prevent solder cracks.
また、接続端子部の接続面が、Au、Ni、等の
半田付性が悪いもの及び半田付後の強度が不十分
であるものは、接続面に半田のぬれ性が良いCu
等の金属をめつき、蒸着、スパツタ法等によつて
設けるか、接続方法を半田付法以外の方法、例え
ば導電エラストマ法を用いる等の対策を施しても
良い。 In addition, if the connection surface of the connection terminal part is made of Au, Ni, etc. with poor solderability, or if the strength after soldering is insufficient, the connection surface should be made of Au, Ni, etc., which has good solder wettability.
They may be provided by plating, vapor deposition, sputtering, or the like, or they may be connected by a method other than soldering, such as a conductive elastomer method.
以上述べたように、本発明によれば、抵抗が小
さく、ホトエツチングが容易で、精度良くパター
ニングでき、基板及び透明導電膜との密着性がよ
く、かつ半田付性がよく、化学的に安定性が高い
金属膜を有する電極板及びその製造方法を得るこ
とができる。 As described above, according to the present invention, resistance is low, photoetching is easy, patterning can be performed with high precision, adhesion to the substrate and transparent conductive film is good, solderability is good, and chemical stability is achieved. It is possible to obtain an electrode plate having a metal film with a high resistance and a method for manufacturing the same.
第１図は、電極基板の一例である液晶表示パネ
ルの一例を示す図、第２図は第１図の部分Ｂの拡
大図、第３図は従来例による電極基板の製造工程
を示す図、第４図は本発明による電極基板の製造
工程の一実施例を示す図である。
２……基板、４，４０……In2O3、１１，１１
０……Cr、１２，１２０……Ni、９１……第１
のホトレジストパターン、９２……第２のホトレ
ジストパターン。
FIG. 1 is a diagram showing an example of a liquid crystal display panel which is an example of an electrode substrate, FIG. 2 is an enlarged view of part B in FIG. 1, and FIG. 3 is a diagram showing a manufacturing process of an electrode substrate according to a conventional example. FIG. 4 is a diagram showing an embodiment of the manufacturing process of an electrode substrate according to the present invention. 2... Substrate, 4, 40... In 2 O 3 , 11, 11
0...Cr, 12,120...Ni, 91...1st
photoresist pattern, 92...second photoresist pattern.
Claims (1)
なる複数の透明電極と、 該透明電極の一部に密着して形成され、前記複
数の透明電極と接続端子部とを接続するCr、Cr
合金、或いはTiからなる第１の金属膜と、 該第１の金属膜上に形成され、Ni、Au或いは
Cuからなる第２の金属膜と、 を有することを特徴とする電極板。 ２ 透明絶縁基板上に透明導電膜を形成する第１
の工程と、 前記透明導電膜上にCr、Cr合金、或いはTiか
らなる第１の金属膜を形成する第２の工程と、 前記第１の金属膜上にNi、Au又はCuからなる
第２の金属膜を形成する第３の工程と、 前記第２の金属膜上に第１のエツチングレジス
トパターンを形成する第４の工程と、 前記第１のエツチングレジストパターンをマス
クにして、前記透明導電膜、前記第１の金属膜及
び前記第２の金属膜をエツチング除去し、複数の
透明電極と該複数の透明電極と接続端子部とを接
続する２層構造の金属膜とからなるパターンを形
成する第５の工程と、 前記第１のエツチングレジストを除去する第６
の工程と、 前記第２の金属膜上に前記第１のエツチングレ
ジストパターンよりも小さい第２のエツチングレ
ジストパターンを形成する第７の工程と、 前記第２のエツチングレジストパターンをマス
クにして、前記透明電極上の前記第１の金属膜及
び前記第２の金属膜のみをエツチング除去する第
８の工程と、 前記第２のエツチングレジストを除去する第９
の工程と、 を有することを特徴とする電極板の製造方法。[Scope of Claims] 1. A plurality of transparent electrodes made of a transparent conductive film formed on a transparent insulating substrate, and a connecting terminal portion formed in close contact with a part of the transparent electrode, and connecting the plurality of transparent electrodes and a connecting terminal portion. Connecting Cr, Cr
A first metal film made of an alloy or Ti; and a first metal film formed on the first metal film and made of Ni, Au or Ti.
An electrode plate comprising: a second metal film made of Cu; 2 First step of forming a transparent conductive film on a transparent insulating substrate
a second step of forming a first metal film made of Cr, Cr alloy, or Ti on the transparent conductive film; and a second step of forming a first metal film made of Ni, Au, or Cu on the first metal film. a third step of forming a metal film; a fourth step of forming a first etching resist pattern on the second metal film; using the first etching resist pattern as a mask, etching the transparent conductive film; The film, the first metal film, and the second metal film are removed by etching to form a pattern consisting of a plurality of transparent electrodes and a two-layer metal film connecting the plurality of transparent electrodes and the connection terminal portion. a fifth step of removing the first etching resist; and a sixth step of removing the first etching resist.
a seventh step of forming a second etching resist pattern smaller than the first etching resist pattern on the second metal film; using the second etching resist pattern as a mask, an eighth step of etching away only the first metal film and the second metal film on the transparent electrode; and a ninth step of removing the second etching resist.
A method for manufacturing an electrode plate, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2610582A JPS58145014A (en) | 1982-02-22 | 1982-02-22 | Method of producing electrode plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2610582A JPS58145014A (en) | 1982-02-22 | 1982-02-22 | Method of producing electrode plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58145014A JPS58145014A (en) | 1983-08-29 |
| JPH0239044B2 true JPH0239044B2 (en) | 1990-09-04 |
Family
ID=12184309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2610582A Granted JPS58145014A (en) | 1982-02-22 | 1982-02-22 | Method of producing electrode plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58145014A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927409A (en) * | 1982-08-09 | 1984-02-13 | カシオ計算機株式会社 | Method of forming electrode for display |
| JP2523486B2 (en) * | 1986-03-31 | 1996-08-07 | 松下電器産業株式会社 | Liquid crystal display panel and manufacturing method thereof |
| JP4511652B2 (en) * | 1998-06-15 | 2010-07-28 | シャープ株式会社 | Method for manufacturing electrode substrate for display device |
| JP4792203B2 (en) * | 2004-03-31 | 2011-10-12 | ハリマ化成株式会社 | Method for forming metal thin film layer on conductive ITO film, and metal thin film layer on conductive ITO film by the method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49125845A (en) * | 1973-04-06 | 1974-12-02 |
-
1982
- 1982-02-22 JP JP2610582A patent/JPS58145014A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49125845A (en) * | 1973-04-06 | 1974-12-02 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58145014A (en) | 1983-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4543573A (en) | Display panel | |
| US3928658A (en) | Method of providing transparent conductive electrodes on a transparent insulating support | |
| US4859036A (en) | Device plate having conductive films selected to prevent pin-holes | |
| US4336295A (en) | Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device | |
| JPH06235927A (en) | Manufacture and structure of tft-lcd signal line | |
| JP2814155B2 (en) | Method of forming ITO film pattern and method of manufacturing substrate for liquid crystal display element | |
| JPH04365012A (en) | Liquid crystal element | |
| US4025404A (en) | Ohmic contacts to thin film circuits | |
| JPH0239044B2 (en) | ||
| JPH06122982A (en) | Etchant composition for metallic thin film consisting of aluminum as main component | |
| JP2999540B2 (en) | Method of forming transparent electrode | |
| JP2907318B2 (en) | Electrode-embedded substrate and method of manufacturing the same | |
| JP3047183B2 (en) | Liquid crystal device manufacturing method | |
| JPS58137908A (en) | Method of forming transparent electrode | |
| JPS61133979A (en) | Electrode construction of display element | |
| JP2652018B2 (en) | Liquid crystal display panel substrate, liquid crystal display panel and method of manufacturing the same | |
| JPH05224220A (en) | Formation of pattern of substrate for liquid crystal display element | |
| JPS60161686A (en) | Manufacture of thin film non-linear device | |
| JPS58133703A (en) | Method of producing electrode plate | |
| JP3512573B2 (en) | Display element manufacturing method | |
| JPS58160925A (en) | Production of electrode plate | |
| JPS6322404B2 (en) | ||
| JPS5927409A (en) | Method of forming electrode for display | |
| JPH03167525A (en) | Production of electrode substrate | |
| JPS58222533A (en) | Substrate for electrode |