JPS58160925A - Production of electrode plate - Google Patents
Production of electrode plateInfo
- Publication number
- JPS58160925A JPS58160925A JP4261282A JP4261282A JPS58160925A JP S58160925 A JPS58160925 A JP S58160925A JP 4261282 A JP4261282 A JP 4261282A JP 4261282 A JP4261282 A JP 4261282A JP S58160925 A JPS58160925 A JP S58160925A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- metallic
- etched
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/243—Reinforcing the conductive pattern characterised by selective plating, e.g. for finish plating of pads
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電極板の製造方法に係シ、特に表示パネル、透
明パネルヒータ等に用いられる電極板の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing an electrode plate, and more particularly to a method of manufacturing an electrode plate used in display panels, transparent panel heaters, and the like.
従来の液晶表示パネルの電極構造として、Cr−Ni膜
Cr−Cu、NiCr−Cu、Ti−Ni。Conventional electrode structures for liquid crystal display panels include Cr--Ni films, Cr--Cu, NiCr--Cu, and Ti--Ni.
Ti−cu等が提案されているが、Ni、Cu膜表面は
酸化されやすく、はんだぬれ性が悪くなり、はんだづけ
する際に不at生ずるという欠点があった。Although Ti-cu and the like have been proposed, the Ni and Cu film surfaces are easily oxidized, resulting in poor solder wettability and a failure to occur during soldering.
本発明の目的は、微細な電極パターンを形成でき、かつ
、はんだのぬれ性が喪好な電極板の製造方法全提供する
ことにある。An object of the present invention is to provide a method for manufacturing an electrode plate that can form a fine electrode pattern and has good solder wettability.
上記目的を達成する本発明電極板の製造方法の特徴とす
るところは、透明電極が形成される基板の一方の主表向
を金属膜で覆う第1の工程と、上記金属膜をAu膜で後
う第2の工程と、上記Au膜を所定のパターン形状のマ
スクでエツ°テングする第3の工程と、上記金属膜を上
記所定のパターン形状のマスクでエツチングする@4の
工程と、上記Au膜膜上上記所定パターン形状のマスク
で再度エツチングする第5の工程とを具備することにあ
る。The method for manufacturing an electrode plate of the present invention that achieves the above object is characterized by a first step of covering one main surface of the substrate on which a transparent electrode is formed with a metal film, and a step of covering the metal film with an Au film. a second step; a third step of etching the Au film with a mask having a predetermined pattern; a step @4 of etching the metal film with a mask having a predetermined pattern; and a fifth step of etching the Au film again using the mask having the predetermined pattern shape.
近年、液晶テレビジョンやグラフインクディスプレイに
用いられる液晶表示素子は、その画像を^精細化する必
要があり、その表示パネル上に透明′TIIIL極と金
網膜電極とを形成する方法が必要となってきた。金属膜
電極として前述した様に、Cr−Ni等の2#金属膜會
用いる例が提案されているが、前述したようにNi、c
uの表面が酸化され、外部回路との接続端子部のはんだ
ぬれ性が悪くなり、接続不良を生ずる場合があった。そ
こで、Ni、Cuの表面の酸化防止のためAu[を形成
することにしたが、しかし、Au金属膜とエツチングを
進めたところ、Au膜の端部がはがれてしまい、隣接し
た端子部へ接触して、液晶パネル内部で短絡してしまう
ことにより、不良を生ずるという欠陥會生じた。そこで
、Au金属膜とエツチング?進め、その後、再度、Au
のエツチング液中でAuをエツチングすることにより、
端部のはがれを防止し、はんだのぬれ性がよく、かつ、
微小なパターンの金属膜電極を形成する。In recent years, the images of liquid crystal display elements used in liquid crystal televisions and graph ink displays need to be made finer, and a method for forming transparent 'TIIIL poles and gold retinal electrodes on the display panels has become necessary. It's here. As mentioned above, an example of using a 2# metal film such as Cr-Ni as a metal film electrode has been proposed;
The surface of u was oxidized, and the solder wettability of the connection terminal portion with the external circuit deteriorated, resulting in poor connection. Therefore, we decided to form Au to prevent oxidation on the surfaces of Ni and Cu, but when etching the Au metal film, the ends of the Au film peeled off and came into contact with the adjacent terminals. As a result, a short circuit occurred inside the liquid crystal panel, resulting in a defect. So, what about Au metal film and etching? Proceed, then again, Au
By etching Au in the etching solution of
Prevents peeling of edges, has good solder wettability, and
Form a fine pattern of metal film electrodes.
以下、本発明の実施例を図面により説明する。Embodiments of the present invention will be described below with reference to the drawings.
第1図は、本発明全適用する一例としてのマトリクス方
式液晶表示素子の一例を示す。1けガラス、プラスチッ
ク等の基板2に設けられるIn雪OB。FIG. 1 shows an example of a matrix type liquid crystal display element to which the present invention is fully applied. In-snow OB provided on a substrate 2 made of glass, plastic, etc.
SnO,及びこれらの混合物等よりなる透明電極、3は
透明電極1または基板2の七に設けられる、C1−N
i −A uの金属膜電極、4は外部回路との接続端子
である。画素部分は透明電極で形成され、そこに電気信
号を与えかつ外部回路との接続端子とする部分4は、同
時に形成された金属膜電極音用いている。A transparent electrode made of SnO, a mixture thereof, etc., 3 is provided on the transparent electrode 1 or the substrate 2, C1-N
The metal film electrode of i-A u, 4 is a connection terminal with an external circuit. The pixel portion is formed of a transparent electrode, and the portion 4, which applies an electric signal thereto and serves as a connection terminal with an external circuit, uses a metal film electrode formed at the same time.
纂2図は透明電極パターンの形成されたガラス基板2の
断面図を示す。この上に第3図のように、嶌空蒸着法あ
るいはスパッタリング法などにより、C?5.Ni6、
− A u 7膜會鵬時積層する。また、続いて、@4
図のように、金属パターンを形成するためのホトレジス
トパターン8會形成する。次に、Au膜7のエツチング
液に基板を浸漬し、Au膜7’)エツチングし、第5図
に示す形状とする。続いて、Ni膜6のエツチングのた
め、Ni膜6のエツチング液中に浸漬するが、この時、
N1膜6とAu膜7の界面でNi膜6が異常にエツチン
グされ、第6図に示すように、Ni膜6とA u j[
7の界面のN1膜6のエツチング液が浸み込んだ様なエ
ツチング形状となる。次いで、Cr膜5のエツチング液
に基板を浸漬して、Cr膜5をエツチングすると第7図
の形状になる。以上でエッチング工程會終了し、ホトレ
ジストfrFiかすと、第8図のようになる。ここで、
透明電極1の厚み150nm%Cr膜5の厚みを110
0n%Ni展6の厚み1l100n% Au1l(7の
厚み會1000mとした場合、Au膜の厚みが薄いため
、第8図に示すひさしの形状の部分が切れて、第9図に
示すように、隣接した電極に接触短絡してしまい、不良
管中じた。ここでこのAu膜7のひさしの部分の幅は、
3〜5μm程度であった。なお、ここで用いたAu7.
Ni6.Cr5のエツチング液の組成を次に示す。Figure 2 shows a cross-sectional view of the glass substrate 2 on which a transparent electrode pattern is formed. As shown in FIG. 3, C? 5. Ni6,
- A u 7 film is laminated during assembly. Also, following @4
As shown in the figure, 8 photoresist patterns for forming metal patterns are formed. Next, the substrate is immersed in an etching solution for the Au film 7, and the Au film 7') is etched into the shape shown in FIG. Next, in order to etch the Ni film 6, it is immersed in an etching solution for the Ni film 6, but at this time,
The Ni film 6 is abnormally etched at the interface between the N1 film 6 and the Au film 7, and as shown in FIG.
The etching shape is such that the etching solution of the N1 film 6 at the interface of the mask 7 has penetrated. Next, the substrate is immersed in an etching solution for the Cr film 5, and the Cr film 5 is etched into the shape shown in FIG. The etching process is thus completed, and the photoresist frFi residue becomes as shown in FIG. 8. here,
The thickness of the transparent electrode 1 is 150 nm%, and the thickness of the Cr film 5 is 110 nm%.
When the thickness of 0n%Ni 6 is 1l100n%Au1l (7) and the thickness is 1000m, the eave-shaped part shown in Figure 8 is cut off because the Au film is thin, and as shown in Figure 9. A contact short circuit occurred with the adjacent electrode, resulting in a defective tube.Here, the width of the eaves part of this Au film 7 is
It was about 3 to 5 μm. Note that the Au7.
Ni6. The composition of the Cr5 etching solution is shown below.
Au7のエツチング液(水溶液)
Ni6のエツチング液
Cr5のエツチング液(水溶液)
これらのエツチング液社、他の組成比でもよいし、他の
エツチング液組成でもよいが、ここではこの組成での結
果1述べている。Etching solution for Au7 (aqueous solution) Etching solution for Ni6 Etching solution for Cr5 (aqueous solution) These etching solution companies may use other composition ratios or other etching solution compositions, but here we will discuss the results with this composition. ing.
そこで、重置明會とのプロセスに適用した一例を示す。Therefore, we will show an example of how this method was applied to the process with Jioki Mingkai.
まず、従来のプロセスで、第7図の形状にパターンを形
成した。次に、再[、Au7のエツチング液中に基板管
浸漬することにより、ひさしの形状のAu膜膜部部分エ
ツチングして取り除く。この時の形状を第10図に示す
。次にホトレレストパターンを除去し、第11図に示す
形状とする。これは、従って、@12図に示す形状とな
るので、第9図に示した様な、Au膜7のひざしの部分
がはがれて、#接し九電憔に接触し不良分生ずるという
現象全防止できる。First, a pattern having the shape shown in FIG. 7 was formed using a conventional process. Next, by immersing the substrate tube in an Au7 etching solution again, the eaves-shaped portion of the Au film is partially etched and removed. The shape at this time is shown in FIG. Next, the photoresist pattern is removed to form the shape shown in FIG. Therefore, since the shape is shown in Figure @12, the phenomenon in which the edge part of the Au film 7 is peeled off and comes in contact with the # contact and the defective part is caused as shown in Figure 9 can be avoided. It can be prevented.
また他の実施例としては、従来のプロセスで、第6図、
すなわち、Ni6のエツチングまで進め、続いて、Au
7のエツチング液中に浸漬してAu7のひさしの部分1
取り除いて、次にCr5のエツチングを行ない、式らに
、ホトレジストを除去しても同様に、不良のない電極板
を作成できる。In another embodiment, in a conventional process, as shown in FIG.
In other words, proceed to etching of Ni6, then proceed to etching of Au.
The eaves part 1 of Au7 was immersed in the etching solution of step 7.
Even if the photoresist is removed by etching Cr5 and the photoresist is removed, a defect-free electrode plate can be produced in the same way.
ま皮、金属膜としては、Cr−Ni膜に限定する必要は
なく、電気抵抗が小さく、ホトエツチングが容易で、精
度良くバターニングでき、基板及び透明導電膜との密着
性が良く、かつ半田付性がよ、<、化学的に安妃性が高
いことを満足する金属、Cr−Cu、NiCr−Cu、
Ti−Ni、Ti−Cu等にも本発明は適用できうる。There is no need to limit the metal film to a Cr-Ni film; it has low electrical resistance, is easy to photo-etch, can be patterned with high precision, has good adhesion to the substrate and transparent conductive film, and has good solderability. Metals that satisfy chemically high properties, Cr-Cu, NiCr-Cu,
The present invention can also be applied to Ti-Ni, Ti-Cu, etc.
本発明によれば、電極板iK徽細な電極パターンを形成
でき、かつ、はんだのぬれ性の良い電極接続端子部用の
電極パターンと電気信号1画素に与えるための電極パタ
ーンを同時に形成できるという効果がある。According to the present invention, a fine electrode pattern can be formed on the electrode plate iK, and an electrode pattern for an electrode connection terminal portion with good solder wettability and an electrode pattern for applying an electric signal to one pixel can be simultaneously formed. effective.
第1図は本発明が適用できる電極板の一実施例のパター
ン図、第2図、第3図、第4図、第5図、第6図、第7
図、第8図、第10図、第11図は本発明が適用できる
電極板の一実施例の断面図、第9図、第12図は本発明
が適用できる電極板の一実施例の斜視図である。
1・・・透明電極、2・・・ガラス基板、3・・・金属
膜電極、4・・・接続端子部、5・・・Cr膜、6・・
・Ni膜、7・・・夢 l 目
芽2 目
/
//2
第5 呂
δ
第8 目
第 1o 口
δ
第120FIG. 1 is a pattern diagram of an embodiment of an electrode plate to which the present invention can be applied, FIGS. 2, 3, 4, 5, 6, and 7.
8, 10, and 11 are cross-sectional views of an embodiment of an electrode plate to which the present invention can be applied, and FIGS. 9 and 12 are perspective views of an embodiment of an electrode plate to which the present invention can be applied. It is a diagram. DESCRIPTION OF SYMBOLS 1... Transparent electrode, 2... Glass substrate, 3... Metal film electrode, 4... Connection terminal part, 5... Cr film, 6...
・Ni film, 7...Dream l Eye bud 2 eyes/ //2 5th Lu δ 8th eye 1o Mouth δ 120th
Claims (1)
膜で覆う第1の工程と、上記金属膜frAu膜で嶺う第
2の工程と、上記Au膜を所定のパターン形状のマスク
でエツチングする第3の工程と、上記金属膜會上記所定
のパターン形状のマスクでエツチングする第4の工程と
、上記A 13膜會上記所定のパターン形状のマスクで
再度エツチングする第5の工程と全具備するととt特徴
とする電極板の製造方法。 2 特#’Flll求の範囲第1項に於いて、上記金属
膜は、Cr、或いはCr合金、或いはTiからなるm1
Mと、該@1層hg設ケラt4、カッN i 、 或い
はCuから成る第2層とから形成されること全特徴とす
る一極板の製造方法。[Claims] 1. One main surface of the substrate on which the transparent electrode is formed is made of gold J4.
a first step of covering the metal film with a film, a second step of covering the metal film with the frAu film, a third step of etching the Au film with a mask having a predetermined pattern shape, and a step of etching the metal film with the predetermined pattern. A method for manufacturing an electrode plate, comprising: a fourth step of etching the A13 film using a mask having a predetermined pattern; and a fifth step of etching the A13 film again using a mask having a predetermined pattern. 2.Specific #'Fllll In the first item, the metal film is made of Cr, Cr alloy, or Ti.
A method for manufacturing a monopolar plate, characterized in that it is formed from M and a second layer consisting of the @1 layer hg layer T4, Ni, or Cu.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4261282A JPS58160925A (en) | 1982-03-19 | 1982-03-19 | Production of electrode plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4261282A JPS58160925A (en) | 1982-03-19 | 1982-03-19 | Production of electrode plate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58160925A true JPS58160925A (en) | 1983-09-24 |
Family
ID=12640844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4261282A Pending JPS58160925A (en) | 1982-03-19 | 1982-03-19 | Production of electrode plate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58160925A (en) |
-
1982
- 1982-03-19 JP JP4261282A patent/JPS58160925A/en active Pending
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