JPS6329557A - Electronic device - Google Patents
Electronic deviceInfo
- Publication number
- JPS6329557A JPS6329557A JP61171659A JP17165986A JPS6329557A JP S6329557 A JPS6329557 A JP S6329557A JP 61171659 A JP61171659 A JP 61171659A JP 17165986 A JP17165986 A JP 17165986A JP S6329557 A JPS6329557 A JP S6329557A
- Authority
- JP
- Japan
- Prior art keywords
- cavity
- semiconductor chip
- filler
- electronic device
- sealing body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000945 filler Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 238000010521 absorption reaction Methods 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 17
- 230000005484 gravity Effects 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229920002050 silicone resin Polymers 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 239000009719 polyimide resin Substances 0.000 abstract description 2
- 235000015110 jellies Nutrition 0.000 abstract 3
- 239000008274 jelly Substances 0.000 abstract 3
- 239000000499 gel Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 14
- 239000000126 substance Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路の如き電子装置に関するもので
あって、特に電子装置の耐湿性を向上させる際に適用し
て有効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to electronic devices such as semiconductor integrated circuits, and particularly relates to a technique that is effective when applied to improve the moisture resistance of electronic devices.
半導体集積回路にとって、耐湿性の向上は極めて重要な
課題である。Improving moisture resistance is an extremely important issue for semiconductor integrated circuits.
「セミコンダクタ−１ワールド（Ｓｅｍ１ｃｏｎｄｕｃ
ｔｏｒＷｏｒｌｄ） Ｊ （１９８５，１０月号、発
行所プレスジャーナル社、ｐｐ８９〜９０）には、耐湿
性向上策が記載されている。その概要は、ウェーハプロ
七スにおいて改良を加えるとともに、封止体についても
種々の改善策が採られている、というものである。“Semiconductor-1 World (Sem1conduc)
torWorld) J (1985, October issue, published by Press Journal Co., Ltd., pp. 89-90) describes measures to improve moisture resistance. The summary is that in addition to improvements in the wafer process, various improvements have also been taken in the sealing body.
本発明者等は、電子装置の耐湿性の向上について検討し
た。以下は、公知とされた技術ではないが、本発明者等
によって検討された技術であり、その概要は次のとおり
である。The present inventors have studied how to improve the moisture resistance of electronic devices. Although the following is not a publicly known technique, it is a technique studied by the present inventors, and the outline thereof is as follows.
半導体チップの一側面、例えばパッドが形成されている
側面にシリコンゲル等の吸湿性のある物質を接触せしめ
、封止体によって一体に封止するものである。この第１
の方法では、封止体内に空間は形成されない。A hygroscopic substance such as silicone gel is brought into contact with one side of the semiconductor chip, for example, the side on which pads are formed, and the semiconductor chip is sealed together with a sealing body. This first
In this method, no space is formed within the encapsulant.
またメモリＩＣのごとく半導体チップが固定されろキャ
ビティを具備するＩＣでは、半導体チップ上に上記シリ
コンゲル等の層を形成して一体に固定する。この第２の
方法では、封止体内のキャビティに空間が存在する。上
記耐湿性向上策は、何れも封止体内に侵入する水分をシ
リコンゲル等によって吸収することができ、耐湿性向上
に寄与するものである。Furthermore, in an IC having a cavity in which a semiconductor chip is fixed, such as a memory IC, a layer of the above-mentioned silicon gel or the like is formed on the semiconductor chip and fixed integrally. In this second method, there is a void in the cavity within the encapsulation. All of the above measures for improving moisture resistance can absorb moisture that enters the sealed body using silicone gel or the like, and contribute to improving moisture resistance.
しかし、本発明者等の検討によると下記の如き問題点を
有していることが明らかになった。However, according to the studies conducted by the present inventors, it has become clear that this method has the following problems.
上記シリコンゲル等は、水分を吸収すると体積が膨張す
る性質、丁なわち膨潤性を有するものであり、膨張率は
、３．８〜４倍にもなる。電子装置の耐湿性試験は、１
２１℃程度の水蒸気温度内で２気圧をかげて行われる。The above-mentioned silicone gel and the like have a property of expanding in volume when absorbing moisture, that is, a swelling property, and the expansion rate is as high as 3.8 to 4 times. Moisture resistance test for electronic devices is 1
It is carried out at a water vapor temperature of about 21°C under 2 atmospheres of pressure.
上記第１の方法では、半導体集積回路を使用している間
、或いは試験中に水分を吸収すると、シリコンゲルが膨
張するものの封止体内に空間がないので、膨張分を吸収
することができない。セして封止体を内部から押し広げ
るような力が作用し、甚だしい場合は封止体が割れてし
まうことがあった。In the first method, when the semiconductor integrated circuit absorbs moisture during use or testing, the silicone gel expands, but there is no space within the sealing body, so the expansion cannot be absorbed. A force that pushes the sealing body apart from the inside is applied, and in extreme cases, the sealing body may crack.
また、半導体集積回路の製造工程では各種の試験が行わ
れるが、そのうち加速試験と呼ばれるものがある。加速
試験は、半導体集積回路に２万Ｇ〜３万Ｇの重力を付加
するものである。上記第２の方法が採用された半導体集
積回路に加速試験を行うと、キャビティ内に空間が存在
するので、シリコンゲルが移動することかある。この場
合、半導体チップの表面が露出したり、ボンディングワ
イヤーが変形して短絡事故が発生したり、ボンディング
ワイヤーが切断することもある。In addition, various tests are performed in the manufacturing process of semiconductor integrated circuits, and some of these tests are called accelerated tests. The accelerated test applies a gravity of 20,000 to 30,000 G to the semiconductor integrated circuit. When an accelerated test is performed on a semiconductor integrated circuit employing the second method, the silicon gel may move because there is a space inside the cavity. In this case, the surface of the semiconductor chip may be exposed, the bonding wire may be deformed, causing a short circuit, or the bonding wire may be cut.
上記問題点は、何れも半導体集積回路にとって致命傷と
なるものであり、早急に解決する必要がある。All of the above-mentioned problems are fatal to semiconductor integrated circuits, and need to be solved as soon as possible.
本発明の目的ｊ家、シリコンゲル等の充填材を用いて耐
湿性を向上させるとともに、封止体の割れを低減し、更
に機械的強度を高めて信頼性を向上した電子装置を提供
することにある。OBJECTS OF THE INVENTION It is an object of the present invention to provide an electronic device that uses a filler such as silicone gel to improve moisture resistance, reduce cracking of the sealing body, and further improve reliability by increasing mechanical strength. It is in.
本発明の前記ならびにその他の目的と新規な特徴は、本
明細書および添付図面から明らかになるであろう。The above and other objects and novel features of the present invention will become apparent from the present specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明子れば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
丁なわち、半導体チップな封止する封止体のキャビティ
に凹状部を形成する。そして上記キャビティ内に半導体
チップを固定するとともに、シリコンゲル等の充填材を
上記キャビティ内に充満するように充填するものである
。That is, a concave portion is formed in a cavity of a sealing body for sealing a semiconductor chip. A semiconductor chip is fixed in the cavity, and a filler such as silicone gel is filled in the cavity.
上記した手段によれば、上記充填材が水分吸収によって
膨張した場合、その膨張分は上記凹状部に侵入するよう
になり、封止体を内側から破壊する力が発生しない。According to the above-described means, when the filler expands due to water absorption, the expanded portion enters the recessed portion, and no force is generated that destroys the sealing body from the inside.
更に過大な重力がかけられても、キャビティ内の空間が
充填材によって充満されているので、充填材の移動がな
（、ボンディングワイヤー等に不要な力が加わらず、ボ
ンディングワイヤーの切断。Furthermore, even if excessive gravity is applied, the space inside the cavity is filled with the filler, so the filler does not move (no unnecessary force is applied to the bonding wire, etc., and the bonding wire is not cut).
短絡といった事故を低減することができ、これらがあい
まって電子装置の信頼性を向上せしめる、という本発明
の目的を達成することができる。Accidents such as short circuits can be reduced, and the object of the present invention can be achieved, which is to improve the reliability of electronic devices.
〔実施例−１〕
以下、第１図を参照して本発明を適用した電子装置の第
１実施例を説明する。[Embodiment 1] Hereinafter, a first embodiment of an electronic device to which the present invention is applied will be described with reference to FIG.
なお、第１図は電子装置の構造を示す要部の断面図であ
る。Note that FIG. 1 is a sectional view of the main parts showing the structure of the electronic device.
本実施例の特徴は、ゼリー状コート材によって耐湿性を
向上するとともに、封止体の蓋部に上記コート材の膨張
分を吸収する凹部を形成したことＫある。The feature of this embodiment is that the moisture resistance is improved by the jelly-like coating material, and a recessed portion is formed in the lid portion of the sealing body to absorb the expansion of the coating material.
電子装置１において、２は封止体基部であり、タブ３上
には半導体チップ４が固定されている。In the electronic device 1, 2 is a sealing body base, and a semiconductor chip 4 is fixed on a tab 3.
そして半導体チップ４のパッド（図示せず）とインナー
リード５とは、ワイヤー６によってボンディングされて
いる。Pads (not shown) of the semiconductor chip 4 and inner leads 5 are bonded by wires 6.
ここで注目子べきは、半導体チップ４上に耐湿性を有す
るゼリー状物質Ａがコーティングされていることである
。上記ゼリー状物質Ａは、ゲル状のシリコン樹脂、或い
はポリイミド系樹脂等であってよい。What should be noted here is that the semiconductor chip 4 is coated with a moisture-resistant jelly-like substance A. The jelly-like substance A may be a gel-like silicone resin, a polyimide resin, or the like.
これらの物質は、水分を分子として捉えるものであり、
半導体チップ４への水分の到達を低減する作用を有する
。These substances capture water as molecules,
It has the effect of reducing moisture reaching the semiconductor chip 4.
更に注目丁べきは、蓋部１１の下面に２個の凹部１２が
形成されていることである。上記蓋部１１は接着剤によ
り、封止体基部２に接着固定されるものであり、上記凹
部１２の開口部が上記ゼリー状物質Ａに面するように固
定される。What should also be noted is that two recesses 12 are formed on the bottom surface of the lid 11. The lid portion 11 is adhesively fixed to the sealing body base 2 with an adhesive, and is fixed so that the opening of the recess 12 faces the jelly-like substance A.
上記構成によると、ゼリー状物質入が水分吸収によって
膨張した場合、膨張分は上記凹部１２内を点線で示すよ
うに上昇するので、膨張分が凹部１２によって吸収され
るようになる。According to the above configuration, when the jelly-like material expands due to absorption of water, the expanded portion rises within the recess 12 as shown by the dotted line, so that the expanded portion is absorbed by the recess 12.
この結果、ゼリー状物質Ａが膨張しても、その膨張力が
低減されることになり、封止体基部２゜蓋部１１に加わ
る力が弱められる。As a result, even if the jelly-like substance A expands, its expansion force is reduced, and the force applied to the sealing body base 2° lid portion 11 is weakened.
更に電子装置１に過大な重力が加えられた場合は、ゼリ
ー状物質Ａが封止体基部２．蓋部１１によって移動空間
なしに充填されているので、移動することができない。Furthermore, if excessive gravity is applied to the electronic device 1, the jelly-like substance A will be attached to the base of the sealing body 2. Since the lid part 11 is filled with no moving space, it cannot be moved.
この結果、半導体チップ４の一部が露出することがなく
、ワイヤー６に不要な力が加わらないので、ワイヤー６
の短絡等の事−法が低減されろ。As a result, a part of the semiconductor chip 4 is not exposed and no unnecessary force is applied to the wire 6.
Problems such as short circuits should be reduced.
上記構成の電子装置は、下記の如き効果を奏するもので
ある。The electronic device having the above configuration has the following effects.
（１）封止体によって封止される半導体チップの側面に
水分を吸収するゼリー状物質をコーティングし、上記封
止体の一部で上記ゼリー状物質に接する面にゼリー状物
質の膨張分を吸収する凹部を形成することにより、上記
ゼリー状物質によって電子装置の耐湿性を向上できる、
という効果が得られる。(1) A jelly-like substance that absorbs moisture is coated on the side surface of the semiconductor chip sealed by the sealing body, and the expanded portion of the jelly-like substance is applied to a part of the sealing body that is in contact with the jelly-like substance. By forming absorbing recesses, the jelly-like material can improve the moisture resistance of electronic devices.
This effect can be obtained.
（２）上記（１）により、上記ゼリー状物質の膨張分が
凹部によりて吸収されるので、膨張力が低減されて封止
体の破壊を低減し得る、という効果が得られる。(2) According to the above (1), the expansion of the jelly-like substance is absorbed by the recesses, so that the expansion force is reduced and the breakage of the sealing body can be reduced.
（３）上記ゼリー状物質は、上記凹部な除き封止体によ
って密閉されているので、電子装置に重力が加えられて
もゼリー状物質が移動することがなく、半導体チップの
露出、ボンディングワイヤーに対する付勢が低減され、
ボンディングワイヤーの短゛絡、切断等の事故を防ぐこ
とができる。(3) Since the jelly-like substance is sealed with the sealing body except for the recess, the jelly-like substance does not move even when gravity is applied to the electronic device, preventing exposure of the semiconductor chip and preventing bonding wires from being exposed. The bias is reduced,
Accidents such as shorting and cutting of the bonding wire can be prevented.
ン（４）上記（１）〜（３）により、電子装置の信頼性
を大幅に向上させることができる。(4) With the above (1) to (3), the reliability of the electronic device can be significantly improved.
〔実施例−２〕
次に、第２図を参照して本発明の第２実施例を説明する
。[Embodiment 2] Next, a second embodiment of the present invention will be described with reference to FIG.
なお、第２図は電子装置の要部の断面図を示すものであ
る。Note that FIG. 2 shows a cross-sectional view of the main parts of the electronic device.
本実施例と上記第１実施例との相違点は、上記凹部を挿
通孔の形状にしたことにある。実施例の説明にあたって
は、上記第１実施例と同様の部分には同一の符号を付し
、説明の重複を避けるものとする。The difference between this embodiment and the first embodiment is that the recess is shaped like an insertion hole. In describing the embodiment, the same parts as in the first embodiment will be denoted by the same reference numerals to avoid duplication of explanation.
蓋部１１に挿通孔の形状になされ、充填材Ａに対し実質
的に凹状部となる開口部１３が形成されている。そして
封止体基部２にはキャビティ１４が形成され、封止体基
部２に蓋部１１を接着固定したとき、キャビティ１４と
上記開口部１３とが連結するようになされている。An opening 13 is formed in the lid 11 in the shape of an insertion hole and substantially concave for the filler A. A cavity 14 is formed in the sealing body base 2, and when the lid portion 11 is adhesively fixed to the sealing body base 2, the cavity 14 and the opening 13 are connected.
キャビティ１４には、上記開口部１３から充填材Ａが注
入により充填される。充填材Ａは、上記ゲル状のシリコ
ン樹脂であってよい。The cavity 14 is filled with the filler A by injection from the opening 13 . The filler A may be the gel-like silicone resin described above.
図示のように、キャビティ１４内に充填材Ａが充填され
た後、加熱により充填材Ａを贅固せしめる。この結果、
開口部１３かも充填材Ａの一端が露出するものの、充填
材Ａが流出することがない。As shown in the figure, after the cavity 14 is filled with the filler A, the filler A is solidified by heating. As a result,
Although one end of the filler A is exposed in the opening 13, the filler A does not flow out.
キャビティ１４内が充填柱入によって充満されるので、
充填材Ａは移動することがな（、水分は充填材Ａによっ
て吸収されるうえに、半導体チップ４の一部が露出した
リボンディングワイヤー６に不要な力が加わるようなこ
とがない。Since the inside of the cavity 14 is filled with the filling columns,
The filler A does not move (moisture is absorbed by the filler A, and unnecessary force is not applied to the rebonding wire 6 where a part of the semiconductor chip 4 is exposed).
したがって、本実施例に示す電子装置は、上記（１）〜
（４）項の効果を奏する上に、下記の効果を奏すること
ができる。Therefore, the electronic device shown in this example has the above (1) to
In addition to achieving the effect of item (4), the following effects can also be achieved.
（５）封止体となる蓋部に開口部を形成し、この開口部
を封止体基部に形成されたキャビティと連結せしめ、上
記開口部を介して耐湿性を向上せしめる充填材をキャビ
ティ内に充填することにより、電子装置の耐湿性を向上
させるための製造が容易になる、という効果が得られる
。(5) An opening is formed in the lid that becomes the sealing body, this opening is connected to the cavity formed in the base of the sealing body, and a filling material that improves moisture resistance is introduced into the cavity through the opening. The effect of this method is that the manufacturing process for improving the moisture resistance of electronic devices is facilitated.
〔実施例−３〕 第３図を参照して本発明の第３実施例を説明する。[Example-3] A third embodiment of the present invention will be described with reference to FIG.
なお、第３図は電子装置の要部の断面図を示すものであ
る。Note that FIG. 3 shows a cross-sectional view of the main parts of the electronic device.
本実施例と上記各実施例との相違点は、封止体基部にキ
ャビティを形成し、蓋部に形成された凹部を上記キャビ
ティに連結せしめたものであり、メモリＩＣに適用され
ている。The difference between this embodiment and the above embodiments is that a cavity is formed in the base of the sealing body, and a recess formed in the lid is connected to the cavity, and is applied to a memory IC.
丁なわち、封止体基部２にはキャビティ１４が形成され
、蓋部１１には凹部１２が形成されている。そして上記
キャビティ１４と上記凹部１２の開放部とが連結するよ
うに、封止体基部２と蓋部１１とが接着固定されろ。That is, a cavity 14 is formed in the sealing body base 2, and a recess 12 is formed in the lid part 11. Then, the sealing body base 2 and the lid part 11 are adhesively fixed so that the cavity 14 and the open part of the recess 12 are connected.
上記構造によれば、水分は充填材Ａによって吸収され、
膨張時には膨張分が凹部１２に吸収されろことになる。According to the above structure, water is absorbed by the filler A,
At the time of expansion, the expansion amount will be absorbed into the recess 12.
電子装置に過大な重力が加えられた場合も、充填材Ａが
移動する空間がないので、半導体チップ４の露出、ボン
ディングワイヤー６の短絡等の事故を低減することがで
きろ。またキャビティ１４内の充填材Ａを凝固させろ必
要がなく、加熱作業を省略することができる。Even if excessive gravity is applied to the electronic device, since there is no space for the filler A to move, accidents such as exposure of the semiconductor chip 4 and short circuit of the bonding wire 6 can be reduced. Further, there is no need to solidify the filler A in the cavity 14, and heating work can be omitted.
したがって、本実施例に示す電子装置は、上記第１実施
例と同様の効果を奏する。Therefore, the electronic device shown in this embodiment has the same effects as the first embodiment.
〔実施例−４〕 第４図を参照して本発明の第４実施例を説明する。[Example-4] A fourth embodiment of the present invention will be described with reference to FIG.
なお、第４図は電子装置の要部の断面図である。Note that FIG. 4 is a sectional view of the main parts of the electronic device.
メモリＩＣ用の封止体基部２にキャビティ１４を形成し
、蓋部１１には開口部１３が形成されている。封止体基
部２と蓋部１１とは接着固定され、上記キャビティ１４
と上記開口部１４とが連結するようになされる。A cavity 14 is formed in the sealing body base 2 for a memory IC, and an opening 13 is formed in the lid 11. The sealing body base 2 and the lid part 11 are adhesively fixed, and the cavity 14 is
and the opening 14 are connected to each other.
充填材Ａは、上記第２実施例で述べたように、開口部１
３かもキャビティ１４内に注入され、その後加熱により
凝固される。The filler A fills the opening 1 as described in the second embodiment above.
3 is injected into the cavity 14 and then solidified by heating.
上記電子装置は、上記第２実施例と同様の効果を奏する
。The electronic device has the same effects as the second embodiment.
〔実施例−５〕 第５図を参照して本発明の第５実施例を説明する。[Example-5] A fifth embodiment of the present invention will be described with reference to FIG.
蓋部１１には凹部１２が形成されるとともに、キャビテ
ィ１４内の内壁面に沿うようにして凸部１５が形成され
又いろ。蓋部］１を封止体基部２に接着固定する場合、
キャビティ１４内の充填材Ａが凸部１５によって押され
るようになる。このためキャビティ１４内の充填材Ａが
少量であっても、凸部１５０体積分に対応して充填材Ａ
の量が見掛は上増量されたようになる。A concave portion 12 is formed in the lid portion 11, and a convex portion 15 is formed along the inner wall surface of the cavity 14. When adhesively fixing the lid part] 1 to the sealing body base 2,
The filling material A in the cavity 14 is pushed by the convex portion 15. Therefore, even if the amount of filler A in the cavity 14 is small, the amount of filler A corresponding to the volume of the convex portion 150 is
The amount appears to have been increased.
そして封止体基部２に蓋部１１が接着固定された段階で
は、キャビティ１４内に充填材Ａが充満したようになる
。At the stage when the lid part 11 is adhesively fixed to the sealing body base 2, the cavity 14 is filled with the filler material A.
充填材Ａが水分を吸収して膨張した場合、膨張分は凹部
１２によって吸収されるので、上記同様の効果が得られ
ろ。When the filler A absorbs water and expands, the expansion is absorbed by the recesses 12, so the same effect as described above can be obtained.
したがって本実施例に示す電子装＃（家、上記効果を奏
するうえに下記の効果な奏する。Therefore, the electronic device shown in this embodiment not only achieves the above effects, but also achieves the following effects.
（６）キャビティが形成された封止体基部に接着固定さ
れる蓋部に、固定時に上記キャビティ内に挿入されろ凸
部を形成するとともに、キャビティ内に充填された充填
材の膨張分を吸収する凹部を形成したので、蓋部を固定
することにより、キャビティ内の充填材が上記凸部の体
積に対応して増量することになり、充填材が少量でよい
、という効果が得られる。(6) On the lid part that is adhesively fixed to the base of the sealing body in which the cavity is formed, when it is fixed, it is inserted into the cavity to form a convex part and absorbs the expansion of the filler filled in the cavity. Since the concave portion is formed, by fixing the lid, the amount of filler in the cavity increases in accordance with the volume of the convex portion, and an effect is obtained in that a small amount of filler is required.
（力 上記（６）により、充填材が水分を吸収して膨張
したとき、その膨張分を凹部によって吸収することがで
き、少量の充填材を用いて電子装置の耐湿性を向上させ
る、という効果が得られる。(Force) According to (6) above, when the filler absorbs moisture and expands, the expansion can be absorbed by the recess, and the moisture resistance of electronic devices can be improved using a small amount of filler. is obtained.
以上に、本発明者等によっくなされた発明を実施例にも
とづき具体的に説明したが、本発明は上記実施例に限定
されろものではなく、その要旨を逸脱しない範囲で種々
変更可能であることはいうまでもない。Above, the invention that has been successfully accomplished by the present inventors has been specifically explained based on examples, but the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. It goes without saying that there is.
たとえば、上記凹部および開口部は２個に限定されず、
３個以上でもよ℃・。For example, the number of the recesses and openings is not limited to two,
3 or more is fine.
充填材は、耐湿性のある物質であれば特に限定すること
なく使用することができろ。The filler can be used without any particular limitation as long as it is moisture resistant.
以上の説明では、主として本発明者等によってなされた
発明をその背景となった利用分野であるレジンモールド
型ＩＣ、キャビティを有するメモＩＪ Ｉ Ｃに適用し
た場合について説明したが、それに限定されるものでは
なく、体積変動のある充填材、コーテイング材を用いて
耐湿性を向上させる電子装置に広く利用することができ
る。In the above explanation, the invention made by the present inventors has been mainly applied to the field of application which is the background thereof, such as a resin mold type IC and a memo IJ IC having a cavity, but the present invention is not limited thereto. Rather, it can be widely used in electronic devices that improve moisture resistance by using fillers and coating materials that vary in volume.
本願において開示される発明のうち代表的なものによっ
て得られろ効果を簡単に説明丁れば、下記のとおりであ
る。A brief explanation of the effects obtained by typical inventions disclosed in this application is as follows.
丁なわち、封止体によって封止されろ半導体チップに耐
湿性のある物質をコーティングするか、或いはキャビテ
ィ内に耐湿性のある物質を充填し、更に上記耐湿性のあ
る物質に接するようにして凹部、または開口部を形成し
上記物質が水分を吸収して膨張した場合の膨張分を吸収
するようにしたので、膨張にともなう力を低減すること
ができるうえに耐湿性を向上させることができ、電子装
置の信頼性を向上させることができろ。In other words, the semiconductor chip sealed by the sealing body is coated with a moisture-resistant material, or the cavity is filled with a moisture-resistant material, and the cavity is brought into contact with the moisture-resistant material. By forming recesses or openings to absorb the expansion when the substance absorbs moisture and expands, it is possible to reduce the force associated with expansion and improve moisture resistance. , can improve the reliability of electronic devices.
第１図は本発明を適用した電子装置の第１実施例を示す
要部の断面図、
第２図は本発明の第２実施例を示す電子装置の要部の断
面図、
第３図は本発明の第３実施例を示す電子装置の要部の断
面図、
第４図は本発明の第４実施例を示す電子装置の要部の断
面図、
第５図は本発明の第５実施例を示す電子装置の要部の断
面図をそれぞれ示すものである。
１・・・電子装置、２・・・封止体基部、３・・・タブ
、４半導体チップ、５・・・インナーリード、６・・・
ボンディングワイヤー、１１・・・蓋部、１２・・・凹
部、１３・・・開口部、１４・・・キャビティ、１５・
・・凸部、Ａ・・・充填材、コーテイング材。
・′、″〜゛＼
代理人 弁理士 小 川 勝 男（パく５、
第 １ 図
第 ２ 図
第 ３ 図
第 ４ 図FIG. 1 is a cross-sectional view of the main parts of an electronic device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view of the main parts of an electronic device according to a second embodiment of the present invention, and FIG. FIG. 4 is a cross-sectional view of the main parts of an electronic device showing a fourth embodiment of the invention; FIG. 5 is a fifth embodiment of the invention. 1A and 1B are cross-sectional views of main parts of an example electronic device, respectively. DESCRIPTION OF SYMBOLS 1... Electronic device, 2... Sealing body base, 3... Tab, 4 semiconductor chip, 5... Inner lead, 6...
Bonding wire, 11... Lid, 12... Recess, 13... Opening, 14... Cavity, 15.
...Protrusion, A...Filling material, coating material.・′、″〜゛＼ Agent: Patent Attorney Katsuo Ogawa (Paku 5, Figure 1 Figure 2 Figure 3 Figure 4)
Claims (1)
れ、この半導体チップに対し侵入する水分を吸収して耐
湿性を向上させるための充填材と、上記半導体チップと
上記充填材とが一体に固定されるキャビティの一側面に
凹状部を形成し、上記充填材の水分吸収にともなう膨張
分を上記凹状部によって吸収せしめる封止体と、をそれ
ぞれ具備したことを特徴とする電子装置。1. A semiconductor chip, a filler that is brought into contact with the semiconductor chip and absorbs moisture that enters the semiconductor chip to improve moisture resistance, and the semiconductor chip and the filler are fixed together. An electronic device comprising: a sealing body having a concave portion formed on one side of a cavity, the concave portion absorbing expansion of the filler due to water absorption.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61171659A JPS6329557A (en) | 1986-07-23 | 1986-07-23 | Electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61171659A JPS6329557A (en) | 1986-07-23 | 1986-07-23 | Electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6329557A true JPS6329557A (en) | 1988-02-08 |
Family
ID=15927313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61171659A Pending JPS6329557A (en) | 1986-07-23 | 1986-07-23 | Electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6329557A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5315847A (en) * | 1991-03-29 | 1994-05-31 | Hitachi, Ltd. | Washing machine |
| JP2002057182A (en) * | 2000-08-10 | 2002-02-22 | Denso Corp | Semiconductor device |
| US6536243B2 (en) * | 1999-12-07 | 2003-03-25 | Kabushiki Kaisha Toshiba | Drum type washing machine with turbidity sensor |
-
1986
- 1986-07-23 JP JP61171659A patent/JPS6329557A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5315847A (en) * | 1991-03-29 | 1994-05-31 | Hitachi, Ltd. | Washing machine |
| US6536243B2 (en) * | 1999-12-07 | 2003-03-25 | Kabushiki Kaisha Toshiba | Drum type washing machine with turbidity sensor |
| JP2002057182A (en) * | 2000-08-10 | 2002-02-22 | Denso Corp | Semiconductor device |
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