JP3211460B2 - Method for manufacturing resin-encapsulated semiconductor device - Google Patents
Method for manufacturing resin-encapsulated semiconductor deviceInfo
- Publication number
- JP3211460B2 JP3211460B2 JP5289093A JP5289093A JP3211460B2 JP 3211460 B2 JP3211460 B2 JP 3211460B2 JP 5289093 A JP5289093 A JP 5289093A JP 5289093 A JP5289093 A JP 5289093A JP 3211460 B2 JP3211460 B2 JP 3211460B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- semiconductor chip
- concave portion
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂封止型半導体装置
の製造方法、特にＩＣのような半導体チップをトランス
ファーモールド法により樹脂で封止する樹脂封止型半導
体装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a resin-sealed semiconductor device, and more particularly to a method of manufacturing a resin-sealed semiconductor device in which a semiconductor chip such as an IC is sealed with a resin by a transfer molding method.
【０００２】[0002]
【従来の技術】ＩＣのような半導体チップをトランスフ
ァーモールド法により樹脂で封止する樹脂封止型半導体
装置の製造は、図４に示したように成形金型１０、１１
を用いて行われた。この成形金型は、下側１０と上型１
１とからなり、ダイパッド２０上に配置された半導体チ
ップ７を所定形状の樹脂パッケージにより封止するため
の中空部であるキャビティ２１Ａ、２１Ｂと、樹脂の通
路となるランナー部２３、それと連通し各キャビティ２
１Ａ、２１Ｂへの樹脂の注入口となるゲート部２４とを
有している。2. Description of the Related Art A resin-sealed semiconductor device for sealing a semiconductor chip such as an IC with a resin by a transfer molding method is manufactured by molding dies 10, 11 as shown in FIG.
Was performed using This molding die is composed of the lower side 10 and the upper side 1
1 and cavities 21A and 21B which are hollow portions for sealing the semiconductor chip 7 disposed on the die pad 20 with a resin package having a predetermined shape, a runner portion 23 serving as a resin passage, and each of the runner portions 23 communicating therewith. Cavity 2
And a gate portion 24 serving as an injection port of the resin into 1A and 21B.
【０００３】ところで、このような成形金型を用いて製
造された樹脂封止型半導体装置は、ダイパッド２０・半
導体チップ７間の熱膨張係数の違いにより熱応力が発生
するという問題、更にはリードフレームの板厚が樹脂封
止部分の厚さを薄くするのを妨げる要因となるという問
題を有している。このため、ダイパッドのないリードフ
レームを用いて行う樹脂封止方法が提案されている。図
５（Ａ）、（Ｂ）はこのような樹脂封止方法の一例とし
て特開平４−７８４８号公報に紹介された方法を工程順
に示すものである。Incidentally, the resin-encapsulated semiconductor device manufactured using such a molding die has a problem that thermal stress is generated due to a difference in thermal expansion coefficient between the die pad 20 and the semiconductor chip 7, and furthermore, leads are not provided. There is a problem that the thickness of the frame is a factor that prevents the thickness of the resin sealing portion from being reduced. Therefore, a resin sealing method using a lead frame without a die pad has been proposed. FIGS. 5A and 5B show, in an order of steps, a method introduced in Japanese Patent Application Laid-Open No. 4-7848 as an example of such a resin sealing method.
【０００４】この方法は、同公報の第１図に示すよう
に、半導体チップ収納可能な窓の周辺部にリードを配置
したものを複数の半導体チップ分一体に連結したリード
フレームを用意し、そして、該リードフレームの各窓に
半導体チップを配置し、該各半導体チップの各電極とそ
れに対応する各リードとをワイヤにより接続して該各ワ
イヤにより各半導体チップをリードフレームによって支
持した状態で半導体チップとリードとワイヤとを樹脂封
止用金型を用いて樹脂封止する樹脂封止型半導体装置の
製造方法において、樹脂封止用金型のキャビティに設け
た上下動防止ピン１２によって半導体チップ７の上下動
を抑えて樹脂封止を行うようにしたものである。図５
（Ａ）はその樹脂封止時の状態を示す。According to this method, as shown in FIG. 1 of the publication, a lead frame is prepared in which leads arranged around a window capable of accommodating a semiconductor chip are integrally connected to a plurality of semiconductor chips. A semiconductor chip is arranged in each window of the lead frame, and each electrode of the semiconductor chip is connected to each lead corresponding thereto by a wire, and each semiconductor chip is supported by the lead frame by the wire. In a method for manufacturing a resin-encapsulated semiconductor device in which a chip, a lead, and a wire are resin-encapsulated by using a resin-encapsulation mold, a semiconductor chip is provided by vertical movement prevention pins 12 provided in a cavity of the resin-encapsulation mold. The resin encapsulation is performed while suppressing the vertical movement of the resin. FIG.
(A) shows the state at the time of resin sealing.
【０００５】このような方法によれば、図５（Ｂ）のよ
うな構造の樹脂封止型半導体装置を得ることができ、特
に樹脂封止の際に樹脂の注入圧力によって半導体チップ
７に位置ずれが生じるのを防止でき、更にはワイヤ８の
断線やワイヤ８間のショート等の発生のおそれをなくす
ことができ、また、樹脂注入時に半導体チップ７が横方
向あるいは上下方向に大きく揺れることにより樹脂の強
度が低下するおそれをなくすことができるという効果が
得られる。According to such a method, a resin-encapsulated semiconductor device having a structure as shown in FIG. 5B can be obtained. Dislocation can be prevented, and furthermore, the risk of disconnection of the wires 8 or short-circuiting between the wires 8 can be eliminated. In addition, the semiconductor chip 7 swings largely in the horizontal or vertical direction during resin injection. The effect of eliminating the possibility that the strength of the resin is reduced can be obtained.
【０００６】[0006]
【発明が解決しようとする課題】ところで、特開平４−
７８４８号公報により紹介された上述の樹脂封止型半導
体装置の製造方法では、樹脂パッケージの表面の一部に
上下動防止ピン１２に対応して凹部１４が形成されると
いう問題があった。即ち、図５（Ｂ）のように樹脂パッ
ケージ１３に凹部１４が形成されるようになると、外観
上好ましくないうえに、樹脂パッケージ１３の機械的強
度の低下、更には凹部１４から水分等が侵入し易くなっ
て信頼性の低下を招くことがある。また、半導体チップ
７が特にメモリデバイスのような場合には、この凹部１
４を通して外部光が照射されるとその電気的特性が影響
されるようになり、例えば図６の特性を示す破線ａのよ
うにデータ保持電圧が光の入射により上昇するようにな
る。こうなるとメモリデバイスのデータが消失してしま
うので、正常動作がしなくなる虞れがある。By the way, Japanese Patent Application Laid-Open No.
The method of manufacturing a resin-encapsulated semiconductor device described in Japanese Patent No. 7848 has a problem that a recess 14 is formed in a part of the surface of the resin package in correspondence with the vertical movement preventing pin 12. That is, when the concave portion 14 is formed in the resin package 13 as shown in FIG. 5B, not only is the appearance unfavorable, the mechanical strength of the resin package 13 decreases, but also moisture and the like enter from the concave portion 14. And the reliability may be reduced. When the semiconductor chip 7 is particularly a memory device, the recess 1
When the external light is irradiated through 4, the electrical characteristics are affected, and the data holding voltage rises due to the incidence of light, for example, as indicated by a broken line a in FIG. In such a case, data in the memory device is lost, so that normal operation may not be performed.
【０００７】本発明はこのような問題点を解決すべく為
されたもので、樹脂パッケージの表面に形成される凹部
をなくすようにすることを目的とするものである。The present invention has been made to solve such a problem, and has as its object to eliminate concave portions formed on the surface of a resin package.
【０００８】[0008]
【課題を解決するための手段】請求項１の樹脂封止型半
導体装置の製造方法は、半導体チップの位置を規定する
凸部を有する金型を用いて該半導体チップを樹脂封止す
る工程を有する樹脂封止型半導体装置の製造方法であっ
て、金属線の先端に、上記樹脂封止のときに上記金型の
凸部により形成された凹部の径と略同じ径を有する球状
体を形成し、該球状体を上記凹部に挿入し、上記球状体
を上記金属線から切り離す各工程を有することを特徴と
する。According to a first aspect of the present invention, there is provided a method of manufacturing a resin-encapsulated semiconductor device, comprising the steps of resin-encapsulating the semiconductor chip using a mold having a convex portion for defining a position of the semiconductor chip. A method of manufacturing a resin-encapsulated semiconductor device having a spherical body having a diameter substantially equal to a diameter of a concave portion formed by a convex portion of the mold at the time of resin encapsulation at a tip of a metal wire. The method further comprises the steps of inserting the spherical body into the recess and separating the spherical body from the metal wire.
【０００９】[0009]
【作用】請求項１の樹脂封止型半導体装置の製造方法に
よれば、金属線の先端に、金型の半導体チップを規定す
る凸部に対応して生じた凹部と略同径の球状体を形成
し、これを該凹部に挿入し、その後、その球状体を上記
金属線から切り離すので、その金属線材料により上記凹
部を埋めることができ、更に、ワイヤボンディング技術
によりその埋込ができる。According to the method of manufacturing a resin-encapsulated semiconductor device of the first aspect, a spherical body having substantially the same diameter as the concave portion formed at the tip of the metal wire corresponding to the convex portion defining the semiconductor chip of the mold. Is formed and inserted into the concave portion, and then the spherical body is cut off from the metal wire. Therefore, the concave portion can be filled with the metal wire material, and furthermore, the embedding can be performed by a wire bonding technique.
【００１０】[0010]
【実施例】以下、本発明樹脂封止型半導体装置及びその
製造方法を図示実施例に従って詳細に説明する。図１は
本発明樹脂封止型半導体装置の一つの実施例を示す断面
図であり、図２（Ａ）、（Ｂ）は図１の樹脂封止型半導
体装置の製造方法の一例を示す断面図で、（Ａ）は樹脂
パッケージの凹部に樹脂を埋めるときの樹脂封止型半導
体装置を示し、（Ｂ）は樹脂パッケージの凹部に樹脂を
埋めた後の樹脂封止型半導体装置を示す。図１におい
て、３はリード、７は半導体チップ収納窓２に収納され
た半導体チップ、８は半導体チップ７の各電極パッド９
とこれに対応するリード３とを接続するワイヤ、１３は
半導体チップ７とリード３とワイヤ８とを樹脂封止した
樹脂パッケージ、１４は樹脂封止の際用いた金型の上下
動防止ピン（特開平４−７８４８号公報に示されている
上下動防止ピン１２に相当）によって樹脂パッケージ１
３の表面の一部に形成された凹部、１６は該凹部１４を
埋める樹脂である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The resin-sealed semiconductor device of the present invention and a method of manufacturing the same will be described below in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing one embodiment of the resin-encapsulated semiconductor device of the present invention, and FIGS. 2A and 2B are cross-sectional views showing an example of a method for manufacturing the resin-encapsulated semiconductor device of FIG. In the figure, (A) shows the resin-sealed semiconductor device when the resin is filled in the concave portion of the resin package, and (B) shows the resin-sealed semiconductor device after the resin is filled in the concave portion of the resin package. In FIG. 1, 3 is a lead, 7 is a semiconductor chip housed in the semiconductor chip housing window 2, and 8 is each electrode pad 9 of the semiconductor chip 7.
A wire 13 for connecting the semiconductor chip 7, the lead 3 and the wire 8 with a resin; and 14 a pin for preventing vertical movement of a mold used for resin sealing. The resin package 1 is formed by a vertical movement preventing pin 12 disclosed in Japanese Patent Application Laid-Open No. 4-7848).
A concave portion 16 formed on a part of the surface of 3 is a resin that fills the concave portion 14.
【００１１】図２において、１５はノズル、１６はノズ
ル１５から滴下される樹脂で、この樹脂１６は図２
（Ａ）に示すように、樹脂パッケージ１３の凹部１４に
埋められる。この樹脂１６は既に形成した樹脂パッケー
ジ１３との接合を良くするため、この樹脂パッケージ１
３と類似した組成の樹脂（例えばエポキシ系樹脂）が用
いられ、図２（Ａ）のように各凹部１４に充填塗布され
る。そして、図２（Ｂ）のように全ての凹部１４に樹脂
１６を塗布したら、樹脂パッケージ１３全体をポストキ
ュアして樹脂１６を硬化させる。In FIG. 2, reference numeral 15 denotes a nozzle, and 16 denotes a resin dropped from the nozzle 15.
As shown in FIG. 3A, the resin package 13 is filled in the concave portion 14. This resin 16 is used to improve the bonding with the resin package 13 already formed.
A resin (for example, an epoxy resin) having a composition similar to that of No. 3 is used, and is filled and applied to each concave portion 14 as shown in FIG. When the resin 16 is applied to all the concave portions 14 as shown in FIG. 2B, the entire resin package 13 is post-cured and the resin 16 is cured.
【００１２】この樹脂１６には外部からの光が半導体チ
ップ７の表面に到達しないように、充分な着色料を含有
させる。また、この樹脂を塗布する際には、その樹脂の
粘度、樹脂パッケージ１３表面の凹部１４の大きさ、形
状等により、塗布圧力や塗布時間等の塗布条件を調整す
る。The resin 16 contains a sufficient coloring agent so that external light does not reach the surface of the semiconductor chip 7. When applying this resin, application conditions such as application pressure and application time are adjusted according to the viscosity of the resin and the size and shape of the concave portion 14 on the surface of the resin package 13.
【００１３】このような本実施例によれば、樹脂封止に
よって表面の一部に形成された樹脂パッケージ１３の凹
部１４は、樹脂１６によって埋めることによりなくすこ
とができる。従って、パッケージ１３の機械的強度の向
上を図り、外部からの水分の侵入を抑制し、外部から侵
入しようとする光を遮断して光による半導体素子の電気
的特性の変動を防止することが出来る。According to this embodiment, the concave portion 14 of the resin package 13 formed on a part of the surface by the resin sealing can be eliminated by filling with the resin 16. Therefore, it is possible to improve the mechanical strength of the package 13, suppress the intrusion of moisture from the outside, block the light from entering from the outside, and prevent the fluctuation of the electrical characteristics of the semiconductor element due to the light. .
【００１４】図３（Ａ）乃至（Ｃ）は本発明樹脂封止型
半導体装置の製造方法の別の実施例を工程順に示す断面
図で、（Ａ）は樹脂パッケージの凹部に金属を埋める前
の樹脂封止型半導体装置を示し、（Ｂ）は樹脂パッケー
ジの凹部に金属を埋めるときの樹脂封止型半導体装置を
示し、（Ｃ）は樹脂パッケージの凹部に金属を埋めた後
の樹脂封止型半導体装置を示す。FIGS. 3A to 3C are sectional views showing another embodiment of the method of manufacturing the resin-encapsulated semiconductor device of the present invention in the order of steps. FIG. 3A shows a state before the metal is filled in the concave portion of the resin package. (B) shows a resin-sealed semiconductor device when a metal is buried in a recess of a resin package, and (C) shows a resin-sealed semiconductor device after a metal is buried in a recess of a resin package. 1 shows a stop type semiconductor device.
【００１５】図３において、１７はワイヤクランパ、１
８はキャピラリ、１９はキャピラリ１８から供給される
金属としての金（Ａｕ）線である。この金線１９は通常
の半導体装置の製造工程のワイヤボンディングで用いら
れるものをそのまま利用することができる。In FIG. 3, reference numeral 17 denotes a wire clamper, 1
8 is a capillary, and 19 is a gold (Au) wire as a metal supplied from the capillary 18. As the gold wire 19, a wire used for wire bonding in a normal semiconductor device manufacturing process can be used as it is.
【００１６】図３（Ａ）のように、先ずワイヤボンディ
ングを行うときと同様に、アーク放電により金線１９の
先端にイニシャルボール１９ａを形成する。この時のボ
ール径は樹脂パッケージ１３の表面に形成されている凹
部１４の大きさに合うように、放電電流、放電時間等を
調整する。次に、キャピラリ１８を降下させて図３
（Ｂ）のように、適度な荷重をかけてイニシャルボール
１９ａを樹脂パッケージ１６の凹部１４に埋め込む。As shown in FIG. 3A, an initial ball 19a is formed at the tip of the gold wire 19 by arc discharge as in the case of performing wire bonding. At this time, the discharge current, the discharge time, and the like are adjusted so that the ball diameter matches the size of the concave portion 14 formed on the surface of the resin package 13. Next, the capillary 18 is lowered, and FIG.
As shown in (B), an initial load 19a is buried in the concave portion 14 of the resin package 16 by applying an appropriate load.
【００１７】続いて、図２（Ｃ）のように、キャピラリ
１８を上昇させるが、このときワイヤクランパ１７の開
閉のタイミングを調整することによって、イニシャルボ
ール１９ａのネックの部分で金線をカットする。これに
よって樹脂パッケージ１３の凹部１４をＡｕボール１９
ａまで埋めることができる。以下同様な操作を繰り返す
ことにより、全ての凹部１４をＡｕボール１９ａで埋め
るようにする。Subsequently, as shown in FIG. 2C, the capillary 18 is raised. At this time, the opening and closing timing of the wire clamper 17 is adjusted to cut the gold wire at the neck of the initial ball 19a. . As a result, the concave portion 14 of the resin package 13 is
a can be filled. Thereafter, the same operation is repeated to fill all the concave portions 14 with the Au balls 19a.
【００１８】このような本発明の各実施例によれば、樹
脂パッケージ１３の表面の一部に形成された全ての凹部
１４は、樹脂１６あるいはＡｕボール１９ａのような充
填物で埋められたので、凹部１４をなくすことができ
る。According to each embodiment of the present invention, all the recesses 14 formed in a part of the surface of the resin package 13 are filled with the resin 16 or the filler such as the Au ball 19a. And the recess 14 can be eliminated.
【００１９】これによって、外観上の問題をなくすこと
ができると共に、樹脂パッケージ１３の機械的強度の向
上、更に凹部１４から水分等が侵入することが防止され
るため信頼性の低下を招くことはなくなる。また、半導
体チップ７が特にメモリデバイスであっても、この凹部
１４を通して半導体チップ７まで外部光が透過すること
はないので、その電気的特性が影響されることはなくな
り、例えば図６の特性を示す実線ｂのように、データ保
持電圧の上昇がなく一定値を維持するようになる。As a result, it is possible to eliminate the problem of appearance, to improve the mechanical strength of the resin package 13 and to prevent moisture and the like from entering from the concave portion 14, thereby lowering the reliability. Disappears. Further, even if the semiconductor chip 7 is a memory device in particular, external light does not pass through the recess 14 to the semiconductor chip 7, so that its electrical characteristics are not affected. For example, the characteristics shown in FIG. As shown by the solid line b, the data holding voltage does not rise and maintains a constant value.
【００２０】尚、各実施例では樹脂パッケージ１３の凹
部１４に埋める充填物としては、樹脂あるいは金Ａｕを
用いる例で説明したが、外部光に対して充分遮蔽効果を
有するような材料であれば他の材料を用いることもでき
る。In each embodiment, the resin or gold Au is used as the filling material for filling the concave portion 14 of the resin package 13. However, any material having a sufficient shielding effect against external light can be used. Other materials can be used.
【００２１】[0021]
【発明の効果】請求項１の樹脂封止型半導体装置の製造
方法は、半導体チップの位置を規定する凸部を有する金
型を用いて該半導体チップを樹脂封止する工程を有する
樹脂封止型半導体装置の製造方法であって、金属線の先
端に、上記樹脂封止のときに上記金型の凸部により形成
された凹部の径と略同じ径を有する球状体を形成し、該
球状体を上記凹部に挿入し、該球状体を上記金属線から
切り離す各工程を有することを特徴とする。According to a first aspect of the present invention, there is provided a method of manufacturing a resin-sealed semiconductor device, comprising the step of resin-sealing the semiconductor chip using a mold having a projection for defining a position of the semiconductor chip. Forming a spherical body having a diameter substantially equal to a diameter of a concave portion formed by the convex portion of the mold at the time of the resin sealing, at the tip of the metal wire, Inserting a body into the concave portion and separating the spherical body from the metal wire.
【００２２】従って、請求項１の樹脂封止型半導体装置
の製造方法によれば、金属線の先端に、金型の半導体チ
ップを規定する凸部に対応して生じた凹部と略同径の球
状体を形成し、これを該凹部に挿入し、その後、その球
状体を上記金属線から切り離すので、その金属線材料に
より上記凹部を埋めることができ、更に、従来のワイヤ
ボンディング技術によりその埋込ができる。Therefore, according to the method of manufacturing a resin-encapsulated semiconductor device of the first aspect, the tip of the metal wire has substantially the same diameter as the concave portion corresponding to the convex portion defining the semiconductor chip of the mold. A spherical body is formed and inserted into the concave portion, and then the spherical body is cut off from the metal wire, so that the concave portion can be filled with the metal wire material, and further filled with a conventional wire bonding technique. Can be included.
【図１】本発明樹脂封止型半導体装置の一つの実施例を
示す断面図である。FIG. 1 is a sectional view showing one embodiment of a resin-sealed semiconductor device of the present invention.
【図２】（Ａ）、（Ｂ）は図１に示した脂封止型半導体
装置の製造方法を工程順に示す断面図である。FIGS. 2A and 2B are cross-sectional views showing a method of manufacturing the oil-sealed semiconductor device shown in FIG. 1 in the order of steps.
【図３】（Ａ）乃至（Ｃ）は本発明樹脂封止型半導体装
置の製造方法の別の例を工程順にを示す断面図である。FIGS. 3A to 3C are cross-sectional views showing another example of the method for manufacturing the resin-encapsulated semiconductor device of the present invention in the order of steps.
【図４】従来例を示す断面図である。FIG. 4 is a sectional view showing a conventional example.
【図５】（Ａ）、（Ｂ）は別の従来例を示す断面図であ
る。FIGS. 5A and 5B are cross-sectional views showing another conventional example.
【図６】本発明と従来例によって得られた樹脂封止型半
導体装置の光・データ保持電圧特性の比較図である。FIG. 6 is a comparison diagram of light / data holding voltage characteristics of a resin-sealed semiconductor device obtained by the present invention and a conventional example.
２ 半導体チップ収納窓 ３ リード ７ 半導体チップ ８ ワイヤ １３ 樹脂パッケージ １４ 凹部 １５ ノズル １６ 樹脂 １８ キャピラリ １９ 金線 １９ａ イニシャルボール（Ａｕボール） 2 Semiconductor chip housing window 3 Lead 7 Semiconductor chip 8 Wire 13 Resin package 14 Concave part 15 Nozzle 16 Resin 18 Capillary 19 Gold wire 19a Initial ball (Au ball)
Claims (1)
する金型を用いて該半導体チップを樹脂封止する工程を
有する樹脂封止型半導体装置の製造方法であって、 金属線の先端に、上記樹脂封止の時に上記金型の凸部に
より形成された凹部の径と略同じ径を有する球状体を形
成する工程と、 上記球状体を上記凹部に挿入する工程と、 上記球状体を上記金属線から切り離す工程と、 を少なくとも有することを特徴とする樹脂封止型半導体
装置の製造方法1. A method of manufacturing a resin-encapsulated semiconductor device, comprising the step of resin-encapsulating a semiconductor chip using a mold having a projection for defining a position of the semiconductor chip, the method comprising: Forming a spherical body having substantially the same diameter as the concave part formed by the convex part of the mold at the time of the resin sealing; inserting the spherical body into the concave part; A method for manufacturing a resin-encapsulated semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5289093A JP3211460B2 (en) | 1993-02-17 | 1993-02-17 | Method for manufacturing resin-encapsulated semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5289093A JP3211460B2 (en) | 1993-02-17 | 1993-02-17 | Method for manufacturing resin-encapsulated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06244314A JPH06244314A (en) | 1994-09-02 |
| JP3211460B2 true JP3211460B2 (en) | 2001-09-25 |
Family
ID=12927466
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5289093A Expired - Fee Related JP3211460B2 (en) | 1993-02-17 | 1993-02-17 | Method for manufacturing resin-encapsulated semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3211460B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931112B (en) * | 2012-11-16 | 2015-04-22 | 杭州士兰集成电路有限公司 | Clamp, device and method for guaranteeing thickness of plastic package body of fully-packaged product |
| JP5928531B2 (en) | 2013-08-19 | 2016-06-01 | 株式会社デンソー | Ignition coil |
-
1993
- 1993-02-17 JP JP5289093A patent/JP3211460B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06244314A (en) | 1994-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20070000599A1 (en) | Assembly method for semiconductor die and lead frame | |
| KR100237051B1 (en) | Bottom lead semiconductor package and method of manufacturing the same | |
| US5214846A (en) | Packaging of semiconductor chips | |
| US7504736B2 (en) | Semiconductor packaging mold and method of manufacturing semiconductor package using the same | |
| JP3211460B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
| JP3173250B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
| JPH08264569A (en) | Manufacture of resin sealed semiconductor device | |
| US7939381B2 (en) | Method of semiconductor packaging and/or a semiconductor package | |
| JP2762954B2 (en) | Method for manufacturing resin-encapsulated semiconductor device | |
| JP2973901B2 (en) | Mold for semiconductor resin sealing | |
| JP3076282B2 (en) | Method for manufacturing semiconductor device | |
| JP2555931B2 (en) | Method for manufacturing semiconductor device | |
| JPH05315512A (en) | Lead frame for semiconductor device | |
| JPH0595014A (en) | Formation method of sealing body | |
| KR200292411Y1 (en) | Leadframe for Small Die Pad Package | |
| KR200202059Y1 (en) | adhesive for bonding chip in fabrication of vari able chip-size applicable package | |
| JPH02295140A (en) | Resin-sealing method for semiconductor device | |
| JPH0997811A (en) | Resin-sealed semiconductor device | |
| JPH05275481A (en) | Manufacture of semiconductor device | |
| KR19990033767A (en) | Semiconductor package and manufacturing method | |
| JPH0590315A (en) | Resin molding die | |
| JPH012329A (en) | Mold for resin sealing | |
| JPH05259208A (en) | Semiconductor device and its production | |
| JP2001085574A (en) | Semiconductor device sealed with resin and mold device | |
| JPH07290513A (en) | Mold for sealing semiconductor device with resin |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |